公开(公告)号：US06392787B1

公开(公告)日：2002-05-21

申请号：US09653916

申请日：2000-09-01

Applicant: Raymond A. Cirelli ,  Omkaram Nalamasu ,  Sanjay Patel ,  Stanley Pau ,  George P Watson ,  Christopher Alan White ,  Robert Waverly Zehner

Inventor： Raymond A. Cirelli ,  Omkaram Nalamasu ,  Sanjay Patel ,  Stanley Pau ,  George P Watson ,  Christopher Alan White ,  Robert Waverly Zehner

IPC: G02F100

CPC classification number: G02B6/1225 ,  B82Y20/00

Abstract: An improved lithographic process for fabricating articles comprising photonic band gap materials with micron-scale periodicities is provided, the process readily capable of being performed by current lithographic processes and equipment. The process involves providing a three-dimensional structure made up of a plurality of stacked layers, where each layer contains a substantially planar lattice of shapes of a first material, typically silicon, with interstices between the shapes. Each shape contacts at least one shape of an adjacent layer, the interstices throughout the plurality of layers are interconnected, and the interstices comprise a second material, e.g., silicon dioxide. Typically, the second material is etched from the interconnected interstices to provide a structure of the first material and air, this structure designed to provide a particular photonic band gap.

Abstract translation: 提供了用于制造包含具有微米级周期性的光子带隙材料的制品的改进的光刻工艺，该工艺容易地由当前的光刻工艺和设备执行。 该方法包括提供由多个堆叠层组成的三维结构，其中每个层包含具有在形状之间的间隙的第一材料（通常为硅）的基本上平面的形状的格子。 每个形状接触相邻层的至少一个形状，整个多个层中的间隙互连，并且间隙包括第二材料，例如二氧化硅。 通常，第二材料从互连的间隙中蚀刻以提供第一材料和空气的结构，该结构被设计成提供特定的光子带隙。

公开(公告)号：US09396933B2

公开(公告)日：2016-07-19

申请号：US13868385

申请日：2013-04-23

Applicant: Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandia ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

Inventor： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandia ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

IPC: H01L21/02 ,  H01L29/205 ,  H01L33/00 ,  C30B23/02 ,  C30B29/40 ,  H01L33/12

CPC classification number: H01L33/12 ,  C30B23/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02661 ,  H01L29/205 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32

Abstract: Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

Abstract translation: 描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。 还描述了PVD AlN缓冲层的工艺条件。 还描述了PVD氮化铝缓冲层的基板预处理。 在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。 该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。

公开(公告)号：US08846437B2

公开(公告)日：2014-09-30

申请号：US13250748

申请日：2011-09-30

Applicant: Kaushal K. Singh ,  Robert Jan Visser ,  Srikant Rao ,  Bhaskar Kumar ,  Claire J. Carmalt ,  Ranga Rao Arnepalli ,  Omkaram Nalamasu ,  Gaurav Saraf ,  Sanjayan Sathasivam ,  Christopher Stuart Blackman

Inventor： Kaushal K. Singh ,  Robert Jan Visser ,  Srikant Rao ,  Bhaskar Kumar ,  Claire J. Carmalt ,  Ranga Rao Arnepalli ,  Omkaram Nalamasu ,  Gaurav Saraf ,  Sanjayan Sathasivam ,  Christopher Stuart Blackman

IPC: H01L21/00 ,  H01L21/02 ,  B82Y30/00 ,  H01L31/18 ,  H01L31/072 ,  H01L31/0352 ,  H01L51/42 ,  C23C16/56 ,  H01L31/075 ,  H01L31/0224 ,  C23C16/30 ,  H01L51/00

CPC classification number: H01L29/78681 ,  B82Y10/00 ,  B82Y30/00 ,  C23C16/301 ,  C23C16/56 ,  H01L21/0237 ,  H01L21/02491 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02601 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/3245 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/207 ,  H01L29/454 ,  H01L29/66742 ,  H01L29/78618 ,  H01L29/78696 ,  H01L31/022425 ,  H01L31/035227 ,  H01L31/072 ,  H01L31/075 ,  H01L31/184 ,  H01L31/1864 ,  H01L51/0048 ,  H01L51/424 ,  Y02E10/544 ,  Y02E10/548 ,  Y02E10/549 ,  Y02P70/521

Abstract: Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer.

Abstract translation: 本发明的实施例提供从基于溶液的前体形成掺杂的砷化镓（GaAs）层的方法。 由基于溶液的前体形成的掺杂砷化镓（GaAs）层可以帮助太阳能电池器件改善光吸收和转换效率。 在一个实施例中，形成太阳能电池器件的方法包括在衬底的表面上形成掺杂有第一类掺杂剂的第一层，在第一层上形成GaAs基层，并形成具有第二层的第二层 在GaAs基层上掺杂的掺杂剂的类型。

公开(公告)号：US08709706B2

公开(公告)日：2014-04-29

申请号：US13455784

申请日：2012-04-25

Applicant: Banqiu Wu ,  Ajay Kumar ,  Kartik Ramaswamy ,  Omkaram Nalamasu

Inventor： Banqiu Wu ,  Ajay Kumar ,  Kartik Ramaswamy ,  Omkaram Nalamasu

IPC: G03F7/26

CPC classification number: G03F7/36 ,  G03F7/40

Abstract: The present invention provides methods and an apparatus controlling and minimizing process defects in a development process, and modifying line width roughness (LWR) of a photoresist layer after the development process, and maintaining good profile control during subsequent etching processes. In one embodiment, a method for forming features on a substrate includes developing and removing exposed areas in the photosensitive layer disposed on the substrate in the electron processing chamber by predominantly using electrons, removing contaminants from the substrate by predominantly using electrons, and etching the non-photosensitive polymer layer exposed by the developed photosensitive layer in the electron processing chamber by predominantly using electrons.

Abstract translation: 本发明提供了控制和最小化显影过程中的工艺缺陷的方法和装置，并且在显影过程之后修改光致抗蚀剂层的线宽粗糙度（LWR），并且在随后的蚀刻工艺期间保持良好的轮廓控制。 在一个实施例中，用于在衬底上形成特征的方法包括通过主要使用电子来显影和去除设置在电子处理室中的衬底上的感光层中的暴露区域，通过主要使用电子从衬底去除污染物， 通过主要使用电子在电子处理室中由显影的感光层曝光的光敏聚合物层。

公开(公告)号：US20130255076A1

公开(公告)日：2013-10-03

申请号：US13898912

申请日：2013-05-21

Applicant: Byung-Sung Kwak ,  Stefan Bangert ,  Dieter Haas ,  Omkaram Nalamasu

Inventor： Byung-Sung Kwak ,  Stefan Bangert ,  Dieter Haas ,  Omkaram Nalamasu

IPC: H01M10/04

CPC classification number: H01M10/0404 ,  H01M4/621 ,  H01M6/40 ,  H01M10/052 ,  H01M10/0585 ,  Y02E60/122 ,  Y02P70/54 ,  Y10T29/52

Abstract: Methods of and factories for thin-film battery manufacturing are described. A method includes operations for fabricating a thin-film battery. A factory includes one or more tool sets for fabricating a thin-film battery.

Abstract translation: 描述了薄膜电池制造的方法和工厂。 一种方法包括制造薄膜电池的操作。 工厂包括用于制造薄膜电池的一个或多个工具组。

公开(公告)号：US20120156819A1

公开(公告)日：2012-06-21

申请号：US13036273

申请日：2011-02-28

Applicant: Mingwei Zhu ,  Vivek Agrawal ,  Nag B. Patibandla ,  Omkaram Nalamasu

Inventor： Mingwei Zhu ,  Vivek Agrawal ,  Nag B. Patibandla ,  Omkaram Nalamasu

IPC: H01L33/06 ,  H01L21/203 ,  C23C16/56 ,  C30B25/08 ,  C23C16/34 ,  C23C16/44

CPC classification number: H01L21/0254 ,  C23C14/0641 ,  C23C14/568 ,  C23C16/34 ,  C23C28/04 ,  C23C28/044 ,  C30B23/02 ,  C30B25/08 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/0095

Abstract: Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.

Abstract translation: 描述了具有形成氮化铝缓冲层的物理气相沉积（PVD）的氮化镓基发光二极管（LED）的制造。

公开(公告)号：US20110315186A1

公开(公告)日：2011-12-29

申请号：US13106728

申请日：2011-05-12

Applicant: James M. Gee ,  Nag B. Patibandla ,  Kaushal K. Singh ,  Omkaram Nalamasu

Inventor： James M. Gee ,  Nag B. Patibandla ,  Kaushal K. Singh ,  Omkaram Nalamasu

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/042 ,  H01L31/05

CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

Abstract: Embodiments of the invention provide a thin single crystalline silicon film solar cell and methods of forming the same. The method includes forming a thin single crystalline silicon layer on a silicon growth substrate, followed by forming front or rear solar cell structures on and/or in the thin single crystalline silicon film. The method also includes attaching the thin single crystalline silicon film to a mechanical carrier and then separating the growth substrate from the thin single crystalline silicon film along a cleavage plane formed between the growth substrate and the thin single crystalline silicon film. Front or rear solar cell structures are then formed on and/or in the thin single crystalline silicon film opposite the mechanical carrier to complete formation of the solar cell.

Abstract translation: 本发明的实施例提供一种薄单晶硅膜太阳能电池及其形成方法。 该方法包括在硅生长衬底上形成薄的单晶硅层，随后在薄的单晶硅膜上和/或上形成前或后太阳能电池结构。 该方法还包括将薄单晶硅膜附着到机械载体上，然后沿生长衬底和薄单晶硅膜之间形成的解理平面从薄单晶硅膜分离生长衬底。 然后在与机械载体相对的薄单晶硅膜上和/或上形成正面或背面的太阳能电池结构，以完成太阳能电池的形成。

公开(公告)号：US20110045349A1

公开(公告)日：2011-02-24

申请号：US12858531

申请日：2010-08-18

Applicant: Victor L. Pushparaj ,  Pravin K. Narwankar ,  Omkaram Nalamasu

Inventor： Victor L. Pushparaj ,  Pravin K. Narwankar ,  Omkaram Nalamasu

IPC: H01M10/058 ,  B05D5/12 ,  C23C16/00 ,  H01G9/07

CPC classification number: H01M4/661 ,  H01G9/0029 ,  H01G9/0032 ,  H01G9/155 ,  H01M4/133 ,  H01M4/134 ,  H01M4/1393 ,  H01M4/1395 ,  H01M10/0525 ,  H01M10/0565 ,  H01M10/0585 ,  Y02E60/13 ,  Y10T29/49115

Abstract: Methods and apparatus for forming energy storage devices are provided. In one embodiment a method of producing an energy storage device is provided. The method comprises positioning an anodic current collector into a processing region, depositing one or more three-dimensional electrodes separated by a finite distance on a surface of the anodic current collector such that portions of the surface of the anodic current collector remain exposed, depositing a conformal polymeric layer over the anodic current collector and the one or more three-dimensional electrodes using iCVD techniques comprising flowing a gaseous monomer into the processing region, flowing a gaseous initiator into the processing region through a heated filament to form a reactive gas mixture of the gaseous monomer and the gaseous initiator, wherein the heated filament is heated to a temperature between about 300° C. and about 600° C., and depositing a conformal layer of cathodic material over the conformal polymeric layer.

Abstract translation: 提供了形成储能装置的方法和装置。 在一个实施例中，提供了一种生产能量存储装置的方法。 该方法包括将阳极集电器定位到处理区域中，在阳极集电器的表面上沉积由有限距离分隔的一个或多个三维电极，使得阳极集电器的表面的一部分保持暴露， 使用iCVD技术使阳极集电器和一个或多个三维电极上的共形聚合物层包括使气态单体流入加工区域，将气态引发剂通过加热的细丝流入加工区域以形成反应性气体混合物 气态单体和气态引发剂，其中将加热的长丝加热至约300℃至约600℃之间的温度，以及在共形聚合物层上沉积保形层的阴极材料。

公开(公告)号：US20100313951A1

公开(公告)日：2010-12-16

申请号：US12797529

申请日：2010-06-09

Applicant: Omkaram Nalamasu ,  Charles Gay ,  Victor L. Pushparaj ,  Kaushal K. Singh ,  Robert J. Visser ,  Majeed A. Foad ,  Ralf Hofmann

Inventor： Omkaram Nalamasu ,  Charles Gay ,  Victor L. Pushparaj ,  Kaushal K. Singh ,  Robert J. Visser ,  Majeed A. Foad ,  Ralf Hofmann

IPC: H01L31/04 ,  H01L31/18 ,  C23C16/22

CPC classification number: H01L31/022425 ,  B82Y10/00 ,  H01L31/0322 ,  H01L31/03529 ,  H01L31/0384 ,  H01L31/0749 ,  H01L51/0048 ,  H01L51/4213 ,  Y02E10/541 ,  Y02P70/521

Abstract: Solar cells are provided with carbon nanotubes (CNTs) which are used: to define a micron/sub-micron geometry of the solar cells; and/or as charge transporters for efficiently removing charge carriers from the absorber layer to reduce the rate of electron-hole recombination in the absorber layer. A solar cell may comprise: a substrate; a multiplicity of areas of metal catalyst on the surface of the substrate; a multiplicity of carbon nanotube bundles formed on the multiplicity of areas of metal catalyst, each bundle including carbon nanotubes aligned roughly perpendicular to the surface of the substrate; and a photoactive solar cell layer formed over the carbon nanotube bundles and exposed surfaces of the substrate, wherein the photoactive solar cell layer is continuous over the carbon nanotube bundles and the exposed surfaces of the substrate. The photoactive solar cell layer may be comprised of amorphous silicon p/i/n thin films; although, concepts of the present invention are also applicable to solar cells with absorber layers of microcrystalline silicon, SiGe, carbon doped microcrystalline silicon, CIS, CIGS, CISSe and various p-type II-VI binary compounds and ternary and quaternary compounds.

Abstract translation: 太阳能电池提供有碳纳米管（CNT），其用于限定太阳能电池的微米/亚微米几何形状; 和/或作为电荷转运体，用于从吸收层有效去除电荷载体以降低吸收层中电子 - 空穴复合的速率。 太阳能电池可以包括：基底; 在基材表面上的金属催化剂的多个区域; 形成在金属催化剂的多个区域上的多个碳纳米管束，每个束包括大致垂直于基板的表面排列的碳纳米管; 以及形成在所述碳纳米管束和所述基板的露出表面上的光活性太阳能电池层，其中所述光电太阳能电池层在所述碳纳米管束和所述基板的暴露表面上连续。 光电太阳能电池层可以由非晶硅p / i / n薄膜组成; 尽管本发明的概念也适用于具有微晶硅，SiGe，碳掺杂微晶硅，CIS，CIGS，CISSe和各种p型II-VI二元化合物和三元和四元化合物的吸收层的太阳能电池。

公开(公告)号：US20100221606A1

公开(公告)日：2010-09-02

申请号：US12396277

申请日：2009-03-02

Applicant: Omkaram Nalamasu ,  Steven Verhaverbeke

Inventor： Omkaram Nalamasu ,  Steven Verhaverbeke

IPC: H01M4/00 ,  C25D11/02

CPC classification number: H01G9/048 ,  C25D11/32 ,  H01G9/0032 ,  H01G9/055 ,  H01G9/07 ,  H01G11/26 ,  H01G11/28 ,  H01G11/86 ,  H01M4/0404 ,  H01M4/134 ,  H01M10/0587 ,  Y02E60/13

Abstract: A method of fabricating an energy storage device with a large surface area electrode comprises: providing an electrically conductive substrate; depositing a semiconductor layer on the electrically conductive substrate, the semiconductor layer being a first electrode; anodizing the semiconductor layer, wherein the anodization forms pores in the semiconductor layer, increasing the surface area of the first electrode; after the anodization, providing an electrolyte and a second electrode to form the energy storage device. The substrate may be a continuous film and the electrode of the energy storage device may be fabricated using linear processing tools. The semiconductor may be silicon and the deposition tool may be a thermal spray tool. Furthermore, the semiconductor layer may be amorphous. The energy storage device may be rolled into a cylindrical shape. The energy storage device may be a battery, a capacitor or an ultracapacitor.

Abstract translation: 一种制造具有大表面积电极的能量存储装置的方法包括：提供导电基板; 在所述导电基板上沉积半导体层，所述半导体层是第一电极; 阳极氧化半导体层，其中阳极氧化在半导体层中形成孔，增加第一电极的表面积; 在阳极氧化之后，提供电解质和第二电极以形成能量存储装置。 衬底可以是连续膜，并且可以使用线性加工工具来制造能量存储装置的电极。 半导体可以是硅，并且沉积工具可以是热喷涂工具。 此外，半导体层可以是无定形的。 储能装置可以卷成圆柱形。 储能装置可以是电池，电容器或超级电容器。