Abstract:
A series of programming pulses are applied to a memory cell to be programmed. A program verify pulse, at an initial program verify voltage, is applied to the memory cell after each programming pulse. The initial program verify voltage is a verify voltage that has been increased by a quick charge loss voltage. The quick charge loss voltage is subtracted from the initial program verify voltage after either a programming pulse has reached a certain reference voltage or a quantity of programming pulses has reached a pulse count threshold.
Abstract:
A non-volatile bistable nano-electromechanical switch is provided for use in memory devices and microprocessors. The switch employs carbon nanotubes as the actuation element. A method has been developed for fabricating nanoswitches having one single-walled carbon nanotube as the actuator. The actuation of two different states can be achieved using the same low voltage for each state.
Abstract:
A dance game method and computer-readable storage medium storing instructions for implementing the dance game method is provided. The dance game method arouses a user's interest to feel a sensation of being assimilated with a virtual character dancing according to music.
Abstract:
Methods and memories having switching points for changing Vstep increments according to a level of a multilevel cell being programmed include programming at a smaller Vstep increment in narrow threshold voltage situations and programming at a larger Vstep increment where faster programming is desired.
Abstract:
Disclosed herein are a printed circuit board and a fabrication method thereof, which can improve electrical properties, shorten processing time, and reduce the thickness of a chip package by achieving an ultra-thin fine circuit pattern. The printed circuit board includes an insulating material; a via-hole formed in a given location of the insulating material; a copper seed layer formed through ion beam surface treatment and vacuum deposition on the surface of the insulating material having the via-hole formed therein; and a copper pattern plating layer formed on a given region of the insulating material, which has the copper seed layer formed thereon, and in the via-hole.
Abstract:
Disclosed are a printed circuit board and a method of manufacturing the same, in which a fluorine resin coating layer is formed on a resin substrate, and then a copper layer is formed using a dry process including ion beam surface treatment and vacuum deposition instead of a conventional wet process including surface roughening and electroless copper plating. According to this invention, the interfacial adhesion of the substrate material may be increased without changing the surface roughness thereof, thus realizing a highly reliable fine circuit. As well, a low dielectric constant and a low loss coefficient may be obtained thanks to the formation of the fluorine resin layer. Further, a wet process is replaced with a dry process, whereby the copper plating layer may be formed in an environmentally friendly manner.
Abstract:
A method controlling the execution of a reliability verification operation in a storage device including a nonvolatile memory device includes; determining whether a read count for a designated unit within the nonvolatile memory device exceeds a count value limit, and upon determining that the read count exceeds the count value limit, executing the reliability verification operation directed to the designated unit, wherein the count value limit is based on at least one of read count information, page bitmap information and environment information stored in the storage device.
Abstract:
A method for manufacturing a model is disclosed. The disclosed method for manufacturing the model comprises the steps of: a) preparing a plurality of pieces having contours in the shape of cross-sections of an object from specific distances away from a random axis direction; and b) assembling the plurality of pieces according to an integration process of connecting surfaces of adjacent pieces from the plurality of pieces and fixing same to each other so as to form the model which corresponds to the shape of the object.
Abstract:
A method controlling the execution of a reliability verification operation in a storage device including a nonvolatile memory device includes; determining whether a read count for a designated unit within the nonvolatile memory device exceeds a count value limit, and upon determining that the read count exceeds the count value limit, executing the reliability verification operation directed to the designated unit, wherein the count value limit is based on at least one of read count information, page bitmap information and environment information stored in the storage device.
Abstract:
A semiconductor package may include a substrate including a substrate connection terminal, at least one semiconductor chip stacked on the substrate and having a chip connection terminal, a first insulating layer covering at least portions of the substrate and the at least one semiconductor chip, and/or an interconnection penetrating the first insulating layer to connect the substrate connection terminal to the chip connection terminal. A semiconductor package may include stacked semiconductor chips, edge portions of the semiconductor chips constituting a stepped structure, and each of the semiconductor chips including a chip connection terminal; at least one insulating layer covering at least the edge portions of the semiconductor chips; and/or an interconnection penetrating the at least one insulating layer to connect to the chip connection terminal of each of the semiconductor chips.