公开(公告)号：US20170342559A1

公开(公告)日：2017-11-30

申请号：US15491726

申请日：2017-04-19

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Hideaki Fukuda

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/34 ,  C23C16/50 ,  C23C16/24

CPC classification number: C23C16/45527 ,  C23C16/24 ,  C23C16/325 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40 ,  C23C16/401 ,  C23C16/45531 ,  C23C16/4554 ,  C23C16/45553 ,  C23C16/50 ,  C23C16/505

Abstract: An oxide or nitride film containing carbon and at least one of silicon and metal is formed by ALD conducting one or more process cycles, each process cycle including: feeding a first precursor in a pulse to adsorb the first precursor on a substrate; feeding a second precursor in a pulse to adsorb the second precursor on the substrate; and forming a monolayer constituting an oxide or nitride film containing carbon and at least one of silicon and metal on the substrate by undergoing ligand substitution reaction between first and second functional groups included in the first and second precursors adsorbed on the substrate. The ligand may be a halogen group, —NR2, or —OR.

公开(公告)号：US09812319B1

公开(公告)日：2017-11-07

申请号：US15203632

申请日：2016-07-06

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Hideaki Fukuda

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02326

Abstract: A method for forming a film filled in a trench of a substrate without seam or void includes: depositing a conformal SiN film in a trench of a substrate placed in a reaction space, using a halide compound as a precursor, until the trench is filled with the conformal SiN film serving as a filled film which has a seam and/or void; and then oxidizing the filled film without deposition of film to make the filled film expand until the seam and/or void of the filled film are/is diminished.

公开(公告)号：US20230207309A1

公开(公告)日：2023-06-29

申请号：US18117729

申请日：2023-03-06

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Steven R.A. Van Aerde ,  Suvi Haukka ,  Atsuki Fukazawa ,  Hideaki Fukuda

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/762 ,  C23C16/455 ,  C23C16/04 ,  C23C16/40

CPC classification number: H01L21/0228 ,  H01J37/32009 ,  H01L21/76224 ,  H01L21/02274 ,  H01L21/02178 ,  H01L21/02299 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/0217 ,  H01L21/02183 ,  H01L21/02219 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/045 ,  C23C16/402 ,  H01J2237/334 ,  H01J2237/3321

Abstract: According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a sub saturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

公开(公告)号：US11610775B2

公开(公告)日：2023-03-21

申请号：US16318094

申请日：2017-07-14

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Steven R. A. Van Aerde ,  Suvi Haukka ,  Atsuki Fukazawa ,  Hideaki Fukuda

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  H01L21/762 ,  C23C16/04 ,  C23C16/40

Abstract: According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

公开(公告)号：US20210143003A1

公开(公告)日：2021-05-13

申请号：US17093564

申请日：2020-11-09

Applicant: ASM IP Holding B.V.

Inventor： Hideaki Fukuda ,  Shinya Ueda ,  Kazuhiro Kimura

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455

Abstract: Methods for depositing on a surface of a substrate are disclosed. Exemplary methods include depositing a silicon oxide material using a cyclical deposition process, and reflowing the material during one or more of the step of depositing and a post-deposition anneal step. Structures including a layer of the material are also disclosed.

公开(公告)号：US20170051405A1

公开(公告)日：2017-02-23

申请号：US14829565

申请日：2015-08-18

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Hideaki Fukuda

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/505 ,  C23C16/34

CPC classification number: C23C16/45536 ,  C23C16/045 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45553 ,  C23C16/5096

Abstract: A method for forming a SiN or SiCN film in a trench on a substrate by plasma-enhanced atomic layer deposition (PEALD) conducts one or more process cycles, each process cycle including: (i) feeding a precursor in a pulse to a reaction space where the substrate is place, said precursor having a Si—N—Si bond in its skeletal structure to which at least one halogen group is attached; and (ii) applying RF power to the reaction space in the presence of a reactant gas and in the absence of any precursor to form a monolayer constituting a SiN or SiCN film.

Abstract translation: 通过等离子体增强的原子层沉积（PEALD）在衬底上的沟槽中形成SiN或SiCN膜的方法进行一个或多个工艺循环，每个工艺循环包括：（i）将脉冲中的前体供给到反应空间 所述前体在其骨架结构中具有至少一个卤素基团的Si-N-Si键; 和（ii）在反应气体的存在下和在不存在任何前体的情况下将RF功率施加到反应空间以形成构成SiN或SiCN膜的单层。

公开(公告)号：US09455138B1

公开(公告)日：2016-09-27

申请号：US14937053

申请日：2015-11-10

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Hideaki Fukuda ,  Noboru Takamure ,  Masaru Zaitsu

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/02123 ,  H01L21/02211 ,  H01L21/02274

Abstract: A method for forming a dielectric film in a trench on a substrate by plasma-enhanced atomic layer deposition (PEALD) performs one or more process cycles, each process cycle including: (i) feeding a silicon-containing precursor in a pulse; (ii) supplying a hydrogen-containing reactant gas at a flow rate of more than about 30 sccm but less than about 800 sccm in the absence of nitrogen-containing gas; (iii) supplying a noble gas to the reaction space; and (iv) applying RF power in the presence of the reactant gas and the noble gas and in the absence of any precursor in the reaction space, to form a monolayer constituting a dielectric film on a substrate at a growth rate of less than one atomic layer thickness per cycle.

Abstract translation: 通过等离子体增强原子层沉积（PEALD）在衬底上的沟槽中形成电介质膜的方法执行一个或多个工艺循环，每个工艺循环包括：（i）以脉冲方式供给含硅前体; （ii）在不存在含氮气体的情况下以大于约30sccm但小于约800sccm的流量供应含氢反应气体; （iii）向反应空间供应惰性气体; 和（iv）在反应气体和惰性气体的存在下，在反应空间中不存在任何前体的情况下施加RF功率，以在小于一个原子的生长速率下在衬底上形成构成电介质膜的单层 每个周期的层厚度。

公开(公告)号：US11996286B2

公开(公告)日：2024-05-28

申请号：US17457858

申请日：2021-12-06

Applicant: ASM IP HOLDING B.V.

Inventor： Charles Dezelah ,  Hideaki Fukuda ,  Viljami Pore

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228 ,  H01J2237/332

Abstract: The current disclosure relates to a vapor deposition assembly for depositing silicon nitride on a substrate by a plasma-enhanced cyclic deposition process. The disclosure also relates to a method for depositing silicon nitride on a substrate by a plasma-enhanced cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a vapor-phase silicon precursor according to the formula SiH3X, wherein X is iodine or bromine, into the reaction chamber, removing excess silicon precursor and possible reaction byproducts from the reaction chamber and providing a reactive species generated from a nitrogen-containing plasma into the reaction chamber to form silicon nitride on the substrate. The disclosure further relates to structure and devices formed by the method.

公开(公告)号：US20230335392A1

公开(公告)日：2023-10-19

申请号：US18300301

申请日：2023-04-13

Applicant: ASM IP HOLDING B.V.

Inventor： Shinya Yoshimoto ,  Jhoelle Roche Guhit ,  Makoto Igarashi ,  Hideaki Fukuda ,  Aurelie Kuroda ,  Timothee Blanquart ,  Takahiro Onuma

IPC: H01L21/02 ,  C23C16/36 ,  C23C16/455 ,  C23C16/48 ,  C23C16/52

CPC classification number: H01L21/02167 ,  C23C16/36 ,  C23C16/4554 ,  C23C16/482 ,  C23C16/52 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments relate to cyclical processors for gap-fill in which deposition is followed by a thermal anneal and ultraviolet treatment and repeated. In some embodiments, the deposition, thermal anneal, and ultraviolet treatment are carried out in separate stations. In some embodiments, a second station is heated to a higher temperature than a first station. In some embodiments, a separate module is used for curing.

公开(公告)号：US20220350248A1

公开(公告)日：2022-11-03

申请号：US17724457

申请日：2022-04-19

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Takashi Yoshida ,  Tomohiro Kubota ,  Hideaki Fukuda

IPC: G03F7/11 ,  H01L21/033 ,  H01J37/32 ,  C23C16/455 ,  C23C16/02 ,  C23C16/50 ,  C23C16/52

Abstract: Methods of forming structures including a photoresist underlayer and an adhesion layer and structures including the photoresist underlayer and adhesion layer are disclosed. Exemplary methods include forming the photoresist underlayer and forming an adhesion layer using a cyclical deposition process. The adhesion layer can be formed within the same reaction chamber used to form the photoresist underlayer.