公开(公告)号：US10062598B2

公开(公告)日：2018-08-28

申请号：US14698793

申请日：2015-04-28

Applicant: Applied Materials, Inc.

Inventor： Anhthu Ngo ,  Zuoming Zhu ,  Balasubramanian Ramachandran ,  Paul Brillhart ,  Edric Tong ,  Anzhong Chang ,  Kin Pong Lo ,  Kartik Shah ,  Schubert S. Chu ,  Zhepeng Cong ,  James Francis Mack ,  Nyi O. Myo ,  Kevin Joseph Bautista ,  Xuebin Li ,  Yi-Chiau Huang ,  Zhiyuan Ye

IPC: H01L21/687 ,  H01L21/673 ,  C30B25/12 ,  B05C13/02 ,  B05C13/00 ,  C23C16/458

CPC classification number: H01L21/68735 ,  B05C13/00 ,  B05C13/02 ,  C23C16/4585 ,  C30B25/12 ,  H01L21/67326 ,  H01L21/6875 ,  H01L21/68785

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

公开(公告)号：US20150340257A1

公开(公告)日：2015-11-26

申请号：US14645883

申请日：2015-03-12

Applicant: Applied Materials, Inc.

Inventor： PAUL BRILLHART ,  Joseph M. Ranish ,  Aaron Muir Hunter ,  Edric Tong ,  James Francis Mack ,  Kin Pong Lo ,  Errol Antonio C. Sanchez ,  Zhiyuan Ye ,  Anzhong Chang

IPC: H01L21/67 ,  H05B3/00 ,  G02B6/08

Abstract: Embodiments disclosed herein relate to a light pipe structure for thermal processing of semiconductor substrates. In one embodiment, a light pipe window structure for use in a thermal process chamber includes a transparent plate, and a plurality of light pipe structures formed in a transparent material that is coupled to the transparent plate, each of the plurality of light pipe structures comprising a reflective surface and having a longitudinal axis disposed in a substantially perpendicular relation to a plane of the transparent plate.

Abstract translation: 本文公开的实施例涉及用于半导体衬底的热处理的光管结构。 在一个实施例中，用于热处理室的光管窗结构包括透明板和形成在透明材料中的多个光管结构，所述多个光管结构联接到透明板，所述多个光管结构中的每一个包括 反射表面并且具有设置在与透明板的平面基本上垂直的方向上的纵向轴线。

公开(公告)号：US11927482B2

公开(公告)日：2024-03-12

申请号：US17604814

申请日：2020-03-27

Applicant: Applied Materials, Inc.

Inventor： Kin Pong Lo ,  Lara Hawrylchak ,  Malcolm J. Bevan ,  Theresa Kramer Guarini ,  Wei Liu ,  Bernard L. Hwang

IPC: G01J3/28 ,  G01J3/02 ,  G01J3/10 ,  G01J3/443

CPC classification number: G01J3/10 ,  G01J3/0218 ,  G01J3/443 ,  G01J2003/2879

Abstract: One or more embodiments described herein generally relate to systems and methods for calibrating an optical emission spectrometer (OES) used for processing semiconductor substrates. In embodiments herein, a light fixture is mounted to a plate within a process chamber. A light source is positioned within the light fixture such that it provides an optical path that projects directly at a window through which the OES looks into the process chamber for its reading. When the light source is on, the OES measures the optical intensity of radiation from the light source. To calibrate the OES, the optical intensity of the light source is compared at two separate times when the light source is on. If the optical intensity of radiation at the first time is different than the optical intensity of radiation at the second time, the OES is modified.

公开(公告)号：US10269614B2

公开(公告)日：2019-04-23

申请号：US14885016

申请日：2015-10-16

Applicant: Applied Materials, Inc.

Inventor： Schubert S. Chu ,  Kartik Shah ,  Anhthu Ngo ,  Karthik Ramanathan ,  Nitin Pathak ,  Nyi O. Myo ,  Paul Brillhart ,  Richard O. Collins ,  Kevin Joseph Bautista ,  Edric Tong ,  Zhepeng Cong ,  Anzhong Chang ,  Kin Pong Lo ,  Manish Hemkar

IPC: H01L21/687 ,  H01L21/67 ,  C23C16/458

Abstract: Implementations of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one implementation, the susceptor includes a first rim surrounding and coupled to an inner region, and a second rim disposed between the inner rim and the first rim. The second rim includes an angled support surface having a plurality of cut-outs formed therein, and the angled support surface is inclined with respect to a top surface of the inner region.

公开(公告)号：US09845550B2

公开(公告)日：2017-12-19

申请号：US14613186

申请日：2015-02-03

Applicant: Applied Materials, Inc.

Inventor： Paul Brillhart ,  Anzhong Chang ,  Edric Tong ,  Kin Pong Lo ,  James Francis Mack ,  Zhiyuan Ye ,  Kartik Shah ,  Errol Antonio C. Sanchez ,  David K. Carlson ,  Satheesh Kuppurao ,  Joseph M. Ranish

IPC: C30B25/14 ,  C30B25/08 ,  C30B25/10 ,  H01L21/67

CPC classification number: C30B25/14 ,  C30B25/08 ,  C30B25/10 ,  H01L21/67115

Abstract: Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome.

公开(公告)号：US09832816B2

公开(公告)日：2017-11-28

申请号：US14258410

申请日：2014-04-22

Applicant: Applied Materials, Inc.

Inventor： Kin Pong Lo ,  Paul Brillhart ,  Balasubramanian Ramachandran ,  Satheesh Kuppurao ,  Daniel Redfield ,  Joseph M. Ranish ,  James Francis Mack ,  Kailash Kiran Patalay ,  Michael Olsen ,  Eddie Feigel ,  Richard Halpin ,  Brett Vetorino

IPC: G02B5/08 ,  H05B3/00 ,  H01L21/67

CPC classification number: H05B3/0047 ,  H01L21/67115

Abstract: Embodiments of the disclosure generally relate to a reflector for use in a thermal processing chamber. In one embodiment, the thermal processing chamber generally includes an upper dome, a lower dome opposing the upper dome, the upper dome and the lower dome defining an internal volume of the processing chamber, a substrate support disposed within the internal volume, and a reflector positioned above and proximate to the upper dome, wherein the reflector has a heat absorptive coating layer deposited on a side of the reflector facing the substrate support.

公开(公告)号：US12125698B2

公开(公告)日：2024-10-22

申请号：US17516326

申请日：2021-11-01

Applicant: Applied Materials, Inc.

Inventor： Lara Hawrylchak ,  Schubert S. Chu ,  Tushar Mandrekar ,  Errol C. Sanchez ,  Kin Pong Lo

IPC: H01L21/02 ,  B08B7/00 ,  C23C16/02 ,  C23C16/24 ,  C23C16/30 ,  C23C16/455 ,  C23C16/505 ,  C23C16/54 ,  C30B25/02 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/02049 ,  B08B7/0035 ,  C23C16/0209 ,  C23C16/0245 ,  C23C16/24 ,  C23C16/30 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/54 ,  C30B25/02 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32513 ,  H01J37/32522 ,  H01J37/32899 ,  H01L21/02046 ,  H01L21/02315 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/32136 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/68742 ,  H01J2237/334 ,  H01J2237/335

Abstract: Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.

公开(公告)号：USD1034491S1

公开(公告)日：2024-07-09

申请号：US29744119

申请日：2020-07-27

Applicant: Applied Materials, Inc.

Designer： Kin Pong Lo ,  Vladimir Nagorny ,  Wei Liu ,  Theresa Kramer Guarini ,  Bernard L. Hwang ,  Malcolm J. Bevan ,  Jacob Abraham ,  Swayambhu Prasad Behera

Abstract: FIG. 1 is a front isometric top view of an edge ring.
FIG. 2 is a top plan view thereof.
FIG. 3 is a bottom plan view thereof.
FIG. 4 is a first side view thereof.
FIG. 5 is a second side view thereof.
FIG. 6 is an enlarged partial view of the section 6 shown in FIG. 1.
FIG. 7 is a cross sectional view along line 7-7 of FIG. 2 thereof.
FIG. 8 is an enlarged partial side view thereof.
FIG. 9 is an enlarged partial view of the section 9 shown in FIG. 2.
FIG. 10 is an enlarged partial cross sectional view of the section 10 shown in FIG. 7.
FIG. 11 is another front isometric top view thereof assembled with an overhang ring.
FIG. 12 is another top plan view thereof assembled with the overhang ring.
FIG. 13 is a third side view thereof assembled with the overhang ring; and,
FIG. 14 is an enlarged partial cross sectional view along line 14-14 of FIG. 12 thereof assembled with an overhang ring.
The broken lines appearing in FIGS. 1-14 illustrate portions of the edge ring assembly that form no part of the claimed design. The dot-dot-dash broken lines show boundaries of cross sectional or enlarged views that form no part of the claimed design.

公开(公告)号：US11164737B2

公开(公告)日：2021-11-02

申请号：US16100399

申请日：2018-08-10

Applicant: Applied Materials, Inc.

Inventor： Lara Hawrylchak ,  Schubert S. Chu ,  Tushar Mandrekar ,  Errol C. Sanchez ,  Kin Pong Lo

IPC: H01L21/02 ,  C30B25/02 ,  C23C16/02 ,  B08B7/00 ,  H01J37/32 ,  C23C16/24 ,  H01L21/67 ,  C23C16/30 ,  C23C16/54 ,  H01L21/687 ,  C23C16/455 ,  C23C16/505 ,  H01L21/3213

Abstract: Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.

公开(公告)号：US11049719B2

公开(公告)日：2021-06-29

申请号：US16057213

申请日：2018-08-07

Applicant: Applied Materials, Inc.

Inventor： Lara Hawrylchak ,  Kin Pong Lo ,  Errol C. Sanchez ,  Schubert S. Chu ,  Tushar Mandrekar

IPC: C30B25/18 ,  H01L21/02 ,  C23C16/02 ,  B08B7/00 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687 ,  C30B25/02 ,  C23C16/54 ,  C30B33/08 ,  C23C16/24 ,  C23C16/46

Abstract: In one implementation, a processing system includes a first transfer chamber coupling to at least one epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a first plasma chamber coupled to the second transfer chamber for removing oxides from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber. The transition station connects to the first transfer chamber and the second transfer chamber, and the transition station includes a second plasma chamber for removing contaminants from the surface of the substrate.