公开(公告)号：US20170323768A1

公开(公告)日：2017-11-09

申请号：US15145750

申请日：2016-05-03

Applicant: Applied Materials, Inc.

Inventor： Lin ZHANG ,  Xuesong LU ,  Andrew V. LE ,  Jang Seok OH ,  Xinhai HAN

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32862 ,  H01J2237/334 ,  H01J2237/335

Abstract: Embodiments of the disclosure include methods for in-situ chamber cleaning efficiency enhancement process for a plasma processing chamber utilized for a semiconductor substrate fabrication process. In one embodiment, a method for performing a plasma treatment process after cleaning a plasma process includes performing a cleaning process in a plasma processing chamber in absent of a substrate disposed thereon, subsequently supplying a plasma treatment gas mixture including at least a hydrogen containing gas and/or an oxygen containing gas into the plasma processing chamber, applying a RF source power to the processing chamber to form a plasma from the plasma treatment gas mixture, and plasma treating an interior surface of the processing chamber.

公开(公告)号：US20170098565A1

公开(公告)日：2017-04-06

申请号：US14875673

申请日：2015-10-05

Applicant: Applied Materials, Inc.

Inventor： Xuesong LU ,  Lin ZHANG ,  Andy LE

IPC: H01L21/67 ,  H01J37/32 ,  G05B19/418 ,  C23C16/52

CPC classification number: H01L21/67253 ,  C23C16/50 ,  C23C16/52 ,  G05B19/41875 ,  G05B19/4189 ,  G05B2219/37008 ,  G05B2219/45032 ,  G05B2219/50388 ,  H01J37/32091 ,  H01J37/3211 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32935 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  Y02P90/14 ,  Y02P90/22

Abstract: Embodiments of the present disclosure provide methodology to match and calibrate processing chamber performance in a processing chamber. In one embodiment, a method for calibrating a processing chamber for semiconductor manufacturing process includes performing a first predetermined process in a processing chamber, collecting a first set of signals transmitted from a first group of sensors disposed in the processing chamber to a controller while performing the predetermined process, analyzing the collected first set of signals, comparing the collected first set of signals with database stored in the controller to check sensor responses from the first group of sensors, calibrating sensors based on the collected first set of signals when a mismatch sensor response is found, subsequently performing a first series of processes in the processing chamber, and collecting a second set of signals transmitted from the sensors to the controller while performing the series of processes.

公开(公告)号：US20170114462A1

公开(公告)日：2017-04-27

申请号：US15290029

申请日：2016-10-11

Applicant: Applied Materials, Inc.

Inventor： Lin ZHANG ,  Xuesong LU ,  Andrew V. LE ,  Zheng YUAN ,  Jang Seok OH ,  Joseph Jamil FARAH ,  Rongping WANG

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/458 ,  H01L21/67

CPC classification number: C23C16/45565 ,  C23C16/458 ,  C23C16/50 ,  C23C16/5096 ,  H01J37/32899 ,  H01L21/67161 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201

Abstract: Embodiments of the present disclosure generally relate to a cluster tool for processing semiconductor substrates. In one embodiment, a cluster tool includes a plurality of process chambers connected to a transfer chamber and each process chamber may simultaneously process four or more substrates. In order to reduce cost, each process chamber includes a substrate support for supporting four or more substrates, single showerhead disposed over the substrate support, and a single radio frequency power source electrically coupled to the showerhead. The showerhead may include a first surface facing the substrate support and a second surface opposite the first surface. A plurality of gas passages may be formed in the showerhead extending from the first surface to the second surface. Process uniformity is improved by increasing the density of the gas passages from the center of the showerhead to the edge of the showerhead.

公开(公告)号：US20160077025A1

公开(公告)日：2016-03-17

申请号：US14521345

申请日：2014-10-22

Applicant: Applied Materials, Inc.

Inventor： Lin ZHANG ,  Shuran SHENG ,  Andrew V. LE

IPC: G01N23/201 ,  G01N23/18 ,  G01T7/08 ,  G01N23/083

CPC classification number: G01N23/201 ,  G01N23/207 ,  G01N2223/071 ,  G01N2223/602 ,  G01T7/08 ,  G03F7/70625 ,  H01L22/12

Abstract: An apparatus for integrating metrology and method for using the same are disclosed. The apparatus includes a multi-chamber system having a transfer chamber, a deposition chamber, an etch chamber and a metrology chamber, and a robot configured to transfer a substrate between the deposition chamber or etch chamber and the metrology chamber.

Abstract translation: 公开了一种用于集成度量的装置及其使用方法。 该装置包括具有传送室，沉积室，蚀刻室和计量室的多室系统，以及被配置为在沉积室或蚀刻室与计量室之间传送衬底的机器人。

公开(公告)号：US20130247972A1

公开(公告)日：2013-09-26

申请号：US13768761

申请日：2013-02-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Hemant P. MUNGEKAR ,  Lin ZHANG ,  Daniel SEVERIN

IPC: H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/1868 ,  H01L31/02167 ,  Y02E10/50 ,  Y02P70/521

Abstract: Methods of forming a passivation film stack on a surface of a silicon-based substrate are provided. In one embodiment, the passivation film stack includes a silicon nitride layer and an aluminum oxide layer disposed between the silicon nitride layer and the silicon-based substrate. The aluminum oxide layer is deposited such that the aluminum oxide layer has a low hydrogen (H) content less than about 17 atomic % and a mass density greater than about 2.5 g/cm3. The silicon nitride layer is deposited on the aluminum oxide layer such that the silicon nitride layer has a low hydrogen (H) content less than about 5 atomic %, and a mass density greater than about 2.7 g/cm3. Reduced amount of hydrogen content in the aluminum oxide layer and the silicon nitride layer prevents gas bubbles from forming in the layers and at the interface of the passivation film stack that cause the film stack to blister.

Abstract translation: 提供了在硅基基板的表面上形成钝化膜堆叠的方法。 在一个实施例中，钝化膜堆叠包括氮化硅层和设置在氮化硅层和硅基衬底之间的氧化铝层。 沉积氧化铝层使得氧化铝层具有低于约17原子％的低氢（H）含量和大于约2.5g / cm 3的质量密度。 氮化硅层沉积在氧化铝层上，使氮化硅层的氢（H）含量低于约5原子％，质量密度大于约2.7g / cm3。 氧化铝层和氮化硅层中的氢含量的降低可以防止在钝化膜堆叠的层内和界面处形成气泡，导致膜堆叠起泡。

公开(公告)号：US20220113198A1

公开(公告)日：2022-04-14

申请号：US17070803

申请日：2020-10-14

Applicant: Applied Materials, Inc.

Inventor： Shuran SHENG ,  Lin ZHANG ,  Joseph C. WERNER

IPC: G01K3/00 ,  G01K3/10 ,  G03F7/42

Abstract: Embodiments herein provide methods of monitoring temperatures of fluid delivery conduits for delivering fluids to, and other components external to, a processing volume of a processing chamber used in electronic device fabrication manufacturing, and monitoring systems related thereto. In one embodiment, a method includes receiving, at the temperature monitoring system (TMS) controller, information from a first plurality of temperature sensors and a second plurality of temperature sensors, comparing, using the TMS controller, the temperature information to one or more pre-determined control limits, and communicating, using the TMS controller, an out-of-control event to a user. Generally, the temperature monitoring system features the first and second pluralities of temperature sensors, the TMS controller, a first connection module, and a second connection module.

公开(公告)号：US20190323960A1

公开(公告)日：2019-10-24

申请号：US16455689

申请日：2019-06-27

Applicant: Applied Materials, Inc.

Inventor： Lin ZHANG ,  Xuesong LU ,  Andrew V. LE ,  Fa JI ,  Jang Seok OH ,  Patrick L. SMITH ,  Shawyon JAFARI ,  Ralph Peter ANTONIO

IPC: G01N21/53 ,  H01L21/67 ,  H01L21/677 ,  G01N1/22

Abstract: An FI having an in-situ particle detector and a method for particle detection therein are provided. In one aspect, the FI includes a fan, a substrate support, a particle detector, and an exhaust outlet. The fan, substrate support, and particle detector are arranged such that, in operation, the fan directs air towards the exhaust outlet and over a substrate on the substrate support to create laminar flow. The particle detector, positioned downstream from the substrate support and upstream from the exhaust outlet, analyzes the air and detects particle concentration before the particles are exhausted. The collected particle detection data may be combined with data from other sensors in the FI and used to identify the source of particle contamination. The particle detector may also be incorporated into other system components, including but not limited to, a load-lock or buffer chamber to detect particle concentration therein.

公开(公告)号：US20190221458A1

公开(公告)日：2019-07-18

申请号：US16247026

申请日：2019-01-14

Applicant: Applied Materials, Inc.

Inventor： Xuesong LU ,  Lin ZHANG ,  Joseph C. WERNER ,  Jang Seok OH ,  Balaji PASUPATHY ,  Michael W. JOHNSON

IPC: H01L21/67 ,  H01J37/32 ,  G01K3/10 ,  G01K3/00 ,  C23C16/50 ,  C23C16/455 ,  C23C16/52

CPC classification number: H01L21/67248 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  G01K3/005 ,  G01K3/10 ,  H01J37/3244 ,  H01J37/32899 ,  H01J2237/24585 ,  H01J2237/3321 ,  H01L21/67017 ,  H01L21/67167 ,  H01L21/67207

Abstract: Embodiments herein provide methods of monitoring temperatures of fluid delivery conduits for delivering fluids to, and other components external to, a processing volume of a processing chamber used in electronic device fabrication manufacturing, and monitoring systems related thereto. In one embodiment, a method of monitoring a processing system includes receiving, through a data acquisition device, temperature information from one or more temperature sensors and receiving context information from a system controller coupled to a processing system comprising the processing chamber. Here, the one or more temperature sensors are disposed in one or more locations external to a processing volume of a processing chamber. The context information relates to instructions executed by the system controller to control one or more operations of the processing system.

公开(公告)号：US20180156727A1

公开(公告)日：2018-06-07

申请号：US15793458

申请日：2017-10-25

Applicant: Applied Materials, Inc.

Inventor： Lin ZHANG ,  Xuesong LU ,  Andrew V. LE ,  Fa JI ,  Jang Seok OH ,  Patrick L. SMITH ,  Shawyon JAFARI ,  Ralph Peter ANTONIO

IPC: G01N21/53 ,  G01N15/02

CPC classification number: G01N21/53 ,  G01N1/22 ,  G01N1/2247 ,  G01N15/0205 ,  G01N2015/0046 ,  G01N2015/0693 ,  H01L21/67017 ,  H01L21/67253 ,  H01L21/67778

Abstract: An FI having an in-situ particle detector and a method for particle detection therein are provided. In one aspect, the FI includes a fan, a substrate support, a particle detector, and an exhaust outlet. The fan, substrate support, and particle detector are arranged such that, in operation, the fan directs air towards the exhaust outlet and over a substrate on the substrate support to create laminar flow. The particle detector, positioned downstream from the substrate support and upstream from the exhaust outlet, analyzes the air and detects particle concentration before the particles are exhausted. The collected particle detection data may be combined with data from other sensors in the FI and used to identify the source of particle contamination. The particle detector may also be incorporated into other system components, including but not limited to, a load-lock or buffer chamber to detect particle concentration therein.

公开(公告)号：US20140000686A1

公开(公告)日：2014-01-02

申请号：US13794238

申请日：2013-03-11

Applicant: Applied Materials, Inc.

Inventor： Hemant P. MUNGEKAR ,  Jeffrey L. FRANKLIN ,  Yi ZHENG ,  Lin ZHANG ,  Manoj VELLAIKAL

IPC: H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/02167 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Embodiments of the invention relate to methods for fabricating a passivation layer stack for photovoltaic devices. In one embodiment, the passivation layer stack comprises a first dielectric layer of AlxOy (or SiOx) and a second dielectric layer of SixNy having a refractive index less than 2.1. The passivation layer stack has contact openings formed therethrough by a series of pulsed laser beams having a wavelength of about 300-700 nm and a pulse width of about 0.01 nanosecond to about 3 nanoseconds. Lowering the refractive index of SixNy capping AlxOy (or SiOx) in the passivation layer stack makes pulsed laser beams less selective since the SixNy absorbs less laser energy. Therefore, desired regions of the entire passivation layer stack can be removed smoothly in a single pass of pulsed laser beams at a shorter wavelength without causing damage to the neighborhood of the passivation layer stack.

Abstract translation: 本发明的实施例涉及制造用于光伏器件的钝化层堆叠的方法。 在一个实施例中，钝化层堆叠包括Al x O y（或SiO x）的第一电介质层和具有小于2.1的折射率的SixNy的第二电介质层。 钝化层堆叠具有通过一系列具有约300-700nm的波长和约0.01纳秒至约3纳秒的脉冲宽度的脉冲激光束形成的接触开口。 降低钝化层堆叠中SixNy封盖AlxOy（或SiOx）的折射率使得脉冲激光束的选择性降低，因为SixNy吸收较少的激光能量。 因此，可以在短波长的脉冲激光束的单次通过中平滑地去除整个钝化层堆叠的期望区域，而不会损坏钝化层堆叠的附近。