公开(公告)号：US10727311B2

公开(公告)日：2020-07-28

申请号：US16050163

申请日：2018-07-31

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Johannes Konrad Baumgartl ,  Matthias Kuenle ,  Erwin Lercher ,  Daniel Schloegl

IPC: H01L29/66 ,  C30B25/00 ,  C30B31/22 ,  C30B31/02 ,  H01L21/225 ,  C30B15/00 ,  C30B15/20 ,  H01L21/02 ,  C30B29/06 ,  H01L29/10

Abstract: A method for forming a power semiconductor device is provided. The method includes: providing a semiconductor wafer grown by a Czochralski process and having a first side; forming an n-type substrate doping layer in the semiconductor wafer at the first side, the substrate doping layer having a doping concentration of at least 1017/cm3; and forming an epitaxy layer on the first side of the semiconductor wafer after forming the n-type substrate doping layer.

公开(公告)号：US10192974B2

公开(公告)日：2019-01-29

申请号：US14960261

申请日：2015-12-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Gerhard Schmidt

IPC: H01L21/04 ,  H01L29/66 ,  H01L29/739 ,  H01L29/10 ,  H01L29/167 ,  H01L29/78 ,  H01L21/22 ,  H01L21/265 ,  H01L29/861

Abstract: A method for forming a semiconductor device includes incorporating chalcogen dopant atoms into a semiconductor doping region of a semiconductor substrate of a semiconductor device. The method further includes incorporating heavy metal atoms into the semiconductor doping region.

公开(公告)号：US09984915B2

公开(公告)日：2018-05-29

申请号：US14291107

申请日：2014-05-30

Applicant: Infineon Technologies AG

Inventor： Matthias Kuenle ,  Gerhard Schmidt ,  Martin Sporn ,  Markus Kahn ,  Juergen Steinbrenner ,  Ravi Joshi

IPC: H01L21/762 ,  H01L29/06 ,  C23C14/06 ,  C23C14/34 ,  H01L29/40 ,  C23C14/58 ,  C23C14/35 ,  H01L29/16 ,  H01L21/02 ,  H01L29/73

CPC classification number: H01L21/762 ,  C23C14/0605 ,  C23C14/345 ,  C23C14/35 ,  C23C14/5806 ,  H01L21/02527 ,  H01L21/02631 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/16 ,  H01L29/408 ,  H01L29/73

Abstract: According to various embodiments, a semiconductor wafer may include: a semiconductor body including an integrated circuit structure; and at least one tetrahedral amorphous carbon layer formed at least one of over or in the integrated circuit structure, the at least one tetrahedral amorphous carbon layer may include a substance amount fraction of sp3-hybridized carbon of larger than approximately 0.4 and a substance amount fraction of hydrogen smaller than approximately 0.1.

公开(公告)号：US09941111B2

公开(公告)日：2018-04-10

申请号：US14724947

申请日：2015-05-29

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Markus Kahn ,  Christian Maier ,  Philipp Koch ,  Juergen Steinbrenner

IPC: H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01L29/06 ,  H01L29/16 ,  H01L21/3065 ,  H01L29/66

CPC classification number: H01L21/02115 ,  H01L21/02046 ,  H01L21/02164 ,  H01L21/02301 ,  H01L21/02315 ,  H01L21/28194 ,  H01L21/3065 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/1602 ,  H01L29/1604 ,  H01L29/51 ,  H01L29/66181 ,  H01L29/7395

Abstract: According to various embodiments, a method for processing a semiconductor layer may include: generating an etch plasma in a plasma chamber of a remote plasma source, wherein the plasma chamber of the remote plasma source is coupled to a processing chamber for processing the semiconductor layer; introducing the etch plasma into the processing chamber to remove a native oxide layer from a surface of the semiconductor layer and at most a negligible amount of semiconductor material of the semiconductor layer; and, subsequently, depositing a dielectric layer directly on the surface of the semiconductor layer.

公开(公告)号：US20160181104A1

公开(公告)日：2016-06-23

申请号：US14960261

申请日：2015-12-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Gerhard Schmidt

IPC: H01L21/225 ,  H01L29/10 ,  H01L29/66 ,  H01L29/861 ,  H01L29/78 ,  H01L29/739 ,  H01L29/167

CPC classification number: H01L29/66666 ,  H01L21/221 ,  H01L21/26506 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/6609 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7827 ,  H01L29/861

Abstract: A method for forming a semiconductor device includes incorporating chalcogen dopant atoms into a semiconductor doping region of a semiconductor substrate of a semiconductor device. The method further includes incorporating heavy metal atoms into the semiconductor doping region.

Abstract translation: 一种用于形成半导体器件的方法包括将硫族杂质原子掺入到半导体器件的半导体衬底的半导体掺杂区域中。 该方法还包括将重金属原子并入到半导体掺杂区域中。

公开(公告)号：US09337186B2

公开(公告)日：2016-05-10

申请号：US14503749

申请日：2014-10-01

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Daniel Schloegl

IPC: H01L29/06 ,  H01L27/06 ,  H01L29/66 ,  H01L29/861

CPC classification number: H01L27/0676 ,  H01L29/0638 ,  H01L29/0661 ,  H01L29/66136 ,  H01L29/66325 ,  H01L29/8613

Abstract: A semiconductor device and a method for forming a semiconductor device are provided. The semiconductor device includes a semiconductor body including a diode-structure with a pn-junction, and an edge-termination structure arranged in a peripheral area of the semiconductor body. The edge-termination structure includes an insulating region partially arranged in the semiconductor body adjacent the pn-junction and a semi-insulating region arranged on the insulating region and spaced apart from the semiconductor body. The semi-insulating region forms a resistor connected in parallel with the diode-structure.

Abstract translation: 提供半导体器件和形成半导体器件的方法。 半导体器件包括具有pn结的二极管结构的半导体本体和布置在半导体本体的周边区域中的边缘终端结构。 边缘终端结构包括部分地布置在邻近pn结的半导体本体中的绝缘区域和布置在绝缘区域上并与半导体本体间隔开的半绝缘区域。 半绝缘区域形成与二极管结构并联连接的电阻器。

公开(公告)号：US20160093690A1

公开(公告)日：2016-03-31

申请号：US14501298

申请日：2014-09-30

Applicant: Infineon Technologies AG

Inventor： Elmar Falck ,  Gerhard Schmidt

IPC: H01L29/06 ,  H01L21/761 ,  H01L21/765 ,  H01L29/739

CPC classification number: H01L29/063 ,  H01L21/761 ,  H01L21/765 ,  H01L29/0615 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0834 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/8613 ,  H01L29/872

Abstract: A semiconductor device has a semiconductor body with a first side and a second side that is arranged distant from the first side in a first vertical direction. The semiconductor device has a rectifying junction, a field stop zone of a first conduction type, and a drift zone of a first conduction type arranged between the rectifying junction and the field stop zone. The semiconductor body has a net doping concentration along a line parallel to the first vertical direction. At least one of (a) and (b) applies: (a) the drift zone has, at a first depth, a charge centroid, wherein a distance between the rectifying junction and the charge centroid is less than 37% of the thickness the drift zone has in the first vertical direction; (b) the absolute value of the net doping concentration comprises, along the straight line and inside the drift zone, a local maximum value.

Abstract translation: 半导体器件具有半导体本体，其具有在第一垂直方向上远离第一侧布置的第一侧和第二侧。 半导体器件具有整流结，第一导电类型的场阻挡区和布置在整流结与场停止区之间的第一导电类型的漂移区。 半导体体沿着与第一垂直方向平行的线具有净掺杂浓度。 （a）和（b）中的至少一个适用：（a）漂移区在第一深度处具有电荷重心，其中整流结和电荷重心之间的距离小于厚度的37％ 漂移区位于第一垂直方向; （b）净掺杂浓度的绝对值包括沿着直线和漂移区内部的局部最大值。

公开(公告)号：US20160049474A1

公开(公告)日：2016-02-18

申请号：US14825231

申请日：2015-08-13

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Josef Georg Bauer ,  Mario Barusic ,  Oliver Humbel ,  Hans Millonig ,  Werner Schustereder

IPC: H01L29/10 ,  H01L29/739 ,  H01L21/263 ,  H01L21/266 ,  H01L21/225 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L29/1095 ,  H01L21/225 ,  H01L21/2636 ,  H01L21/26506 ,  H01L21/266 ,  H01L21/3221 ,  H01L29/0804 ,  H01L29/0834 ,  H01L29/167 ,  H01L29/207 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66128 ,  H01L29/66272 ,  H01L29/66325 ,  H01L29/66333 ,  H01L29/66363 ,  H01L29/732 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/744 ,  H01L29/8611

Abstract: Disclosed are a method and a semiconductor device. The method includes implanting recombination center atoms via a first surface into a semiconductor body, and causing the implanted recombination center atoms to diffuse in the semiconductor body in a first diffusion process.

Abstract translation: 公开了一种方法和半导体器件。 该方法包括通过第一表面将复合中心原子注入到半导体本体中，并且使得注入的复合中心原子在第一扩散过程中在半导体本体中扩散。

公开(公告)号：US09209027B1

公开(公告)日：2015-12-08

申请号：US14459391

申请日：2014-08-14

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Josef Georg Bauer

IPC: H01L21/00 ,  H01L21/265 ,  H01L29/66

CPC classification number: H01L21/26506 ,  H01L21/221 ,  H01L21/2652 ,  H01L21/324 ,  H01L29/167 ,  H01L29/207 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66234 ,  H01L29/732 ,  H01L29/8611

Abstract: A method includes implanting recombination center atoms via a first surface into a semiconductor body and causing the implanted recombination center atoms to diffuse in the semiconductor body in a first diffusion process.

Abstract translation: 一种方法包括通过第一表面将复合中心原子注入到半导体体中，并且使得注入的复合中心原子在第一扩散过程中在半导体本体中扩散。

公开(公告)号：US10325803B2

公开(公告)日：2019-06-18

申请号：US15969868

申请日：2018-05-03

Applicant: Infineon Technologies AG

Inventor： Matthias Kuenle ,  Gerhard Schmidt ,  Martin Sporn ,  Markus Kahn ,  Juergen Steinbrenner ,  Ravi Joshi

IPC: C23C14/06 ,  H01L21/02 ,  H01L21/762 ,  H01L29/16 ,  H01L29/06 ,  H01L29/40 ,  C23C14/58 ,  C23C14/34 ,  C23C14/35 ,  H01L29/73

Abstract: According to various embodiments, a semiconductor wafer may include: a semiconductor body including an integrated circuit structure; and at least one tetrahedral amorphous carbon layer formed at least one of over or in the integrated circuit structure, the at least one tetrahedral amorphous carbon layer may include a substance amount fraction of sp3-hybridized carbon of larger than approximately 0.4 and a substance amount fraction of hydrogen smaller than approximately 0.1.