公开(公告)号：US20020037655A1

公开(公告)日：2002-03-28

申请号：US09963385

申请日：2001-09-27

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Masahiko Hasunuma ,  Hideshi Miyajima ,  Hisashi Kaneko ,  Rempei Nakata

IPC分类号： H01L021/31

CPC分类号： H01L21/67253 ,  H01L21/67017 ,  H01L21/76828

摘要： A method for manufacturing a semiconductor device, comprising controlling a humidity in an atmosphere around a low dielectric constant insulating film at 30% or less, during a processing period and a transfer period between processing equipments, in which at least a part of said low dielectric constant insulating film is exposed to the atmosphere

摘要翻译： 一种制造半导体器件的方法，包括在处理期间和处理设备之间的转移期间，在低介电常数绝缘膜周围的气氛中控制30％以下的湿度，其中至少部分所述低电介质 恒定绝缘膜暴露在大气中

公开(公告)号：US20040159951A1

公开(公告)日：2004-08-19

申请号：US10776202

申请日：2004-02-12

申请人： Kabushiki Kaisha Toshiba

发明人： Hiroshi Toyoda ,  Mitsuhiro Nakao ,  Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuko Sakata ,  Toshiaki Komukai

IPC分类号： H01L023/48

CPC分类号： H01L21/76846 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76886 ,  H01L21/76888 ,  H01L22/32 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05017 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05093 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05546 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05605 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05616 ,  H01L2224/0562 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/1312 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45113 ,  H01L2224/45116 ,  H01L2224/4512 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48505 ,  H01L2224/48611 ,  H01L2224/48616 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48711 ,  H01L2224/48716 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48799 ,  H01L2224/48805 ,  H01L2224/48811 ,  H01L2224/48813 ,  H01L2224/48816 ,  H01L2224/4882 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/85375 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2224/05609 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2224/48713 ,  H01L2224/48705 ,  H01L2224/4872 ,  H01L2224/48605 ,  H01L2224/48613 ,  H01L2224/4862 ,  H01L2924/00015

摘要： A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

摘要翻译： 一种半导体器件，其由形成在半导体衬底上的铜布线层构成，该电极层与铜布线层电连接并具有合金，所述焊接电极层含有铜和氧化倾向高于铜的金属 形成为延伸到底表面，并且具有延伸到焊盘电极层的开口的绝缘保护膜。

公开(公告)号：US20040043602A1

公开(公告)日：2004-03-04

申请号：US10650974

申请日：2003-08-29

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Junichi Wada ,  Atsuko Sakata ,  Tomio Katata ,  Takamasa Usui ,  Masahiko Hasunuma ,  Hideki Shibata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura

IPC分类号： H01L021/4763 ,  H01L021/44

CPC分类号： H01L21/76867 ,  H01L21/2855 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76864 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76886 ,  H01L21/76889

摘要： A method of manufacturing semiconductor device which comprises the steps of forming an insulating film on an Si substrate provided with a wiring layer, forming a contact hole connected to the wiring layer and a wiring groove in the insulating film, filling the contact hole with an Si film, successively forming an Al film and a Ti film all over the substrate, performing a heat treatment thereby to substitute the Al film for the Ti film, and to allow the Si film to be absorbed by the Ti film, whereby filling the contact hole and wiring groove with the Al film, and removing a Ti/Ti silicide which is consisting of Ti silicide formed through the absorption of the Si film by the Ti film and a superfluous Ti, whereby filling the contact hole with an Al plug and filling the wiring groove with an Al wiring.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在具有布线层的Si衬底上形成绝缘膜，形成与布线层连接的接触孔和绝缘膜中的布线槽，用Si 膜，依次在基板上形成Al膜和Ti膜，进行热处理，从而将Al膜替代为Ti膜，并使Si膜被Ti膜吸收，由此填充接触孔 和Al膜的布线槽，除去由Ti膜和多余Ti吸收Si膜形成的由Ti硅化物构成的Ti / Ti硅化物，由此用Al塞填充接触孔，并填充 布线槽与Al接线。

公开(公告)号：US20040005774A1

公开(公告)日：2004-01-08

申请号：US10600568

申请日：2003-06-23

申请人： Kabushiki Kaisha Toshiba

发明人： Hiroshi Toyoda ,  Hiroyuki Yano ,  Gaku Minamihaba ,  Dai Fukushima ,  Tetsuo Matsuda ,  Hisashi Kaneko

IPC分类号： H01L021/4763

CPC分类号： H01L21/76846 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76819 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76849 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a cap film comprises a first polishing step of performing a polishing operation at selectivity of R1 (nullremoval rate for the cap film/removal rate for the insulating film), and a second polishing step of performing a polishing operation at selectivity of R2 (nullremoval rate for the cap film/removal rate for the insulating film). Each of the polishing operations is performed by using a slurry having the condition of R1>R2. By performing the polishing operations at different selectivity, the cap film free from problems such as dishing of the cap film and the residual cap film on side walls of a recess is formed. Consequently, a semiconductor device having an excellent RC characteristic can be provided.

摘要翻译： 形成盖膜的方法包括以R1的选择性（=绝缘膜的除去速率/绝缘膜的去除速率）进行抛光操作的第一抛光步骤，以及以选择性进行抛光操作的第二抛光步骤 的R2（=盖膜的去除率/绝缘膜的去除率）。 通过使用条件为R1> R2的浆料进行每次研磨操作。 通过以不同的选择性进行抛光操作，形成了帽膜没有诸如凹陷的盖膜和残留帽膜之间的问题。 因此，可以提供具有优异RC特性的半导体器件。

公开(公告)号：US20020003304A1

公开(公告)日：2002-01-10

申请号：US09899233

申请日：2001-07-06

申请人： Kabushiki Kaisha Toshiba

发明人： Noriaki Matsunaga ,  Hisashi Kaneko ,  Soichi Nadahara

IPC分类号： H01L023/053 ,  H01L023/12 ,  H01L023/48

CPC分类号： H01L25/0657 ,  H01L23/48 ,  H01L23/5222 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2924/00014 ,  H01L2924/13091 ,  H05K1/144 ,  H01L2924/00 ,  H01L2224/05599

摘要： The semiconductor device has the first module having the first interconnection line, the second module having the second interconnection line which is shorter than the first interconnection line, the second module is formed separately from the first module, the second module is attached to the first module in a laminating direction of the first and second interconnection lines, and the second interconnection line and the first interconnection line are electrically connected to each other, and a ground line provided within the first module and paired with the first interconnection line.

摘要翻译： 所述半导体器件具有所述第一模块，所述第一模块具有所述第一互连线，所述第二模块具有比所述第一互连线短的所述第二互连线，所述第二模块与所述第一模块分开形成，所述第二模块附接到所述第一模块 在第一和第二互连线的层叠方向上，并且第二互连线和第一互连线彼此电连接，以及设置在第一模块内并与第一互连线配对的接地线。