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46 条记录 (耗时 0.022 秒)

    Method for manufacturing semiconductor package
    16.
    发明授权
    Method for manufacturing semiconductor package 有权

    公开(公告)号：US11527503B2

    公开(公告)日：2022-12-13

    申请号：US16972528

    申请日：2020-01-23

    申请人： LG CHEM, LTD.

    发明人： You Jin Kyung ,  Minsu Jeong ,  Kwang Joo Lee

    IPC分类号： H01L21/30 ,  H01L23/00

    摘要： The present disclosure relates to a method for manufacturing a semiconductor package including vacuum-laminating a non-conductive film on a substrate on which a plurality of through silicon vias are provided and bump electrodes are formed, and then performing UV irradiation, wherein an increase in melt viscosity before and after UV irradiation can be adjusted to 30% or less, whereby a bonding can be performed without voids during thermo-compression bonding, and resin-insertion phenomenon between solders can be prevented, fillets can be minimized and reliability can be improved.

    Back grinding tape
    17.
    发明授权
    Back grinding tape 有权

    公开(公告)号：US11424153B2

    公开(公告)日：2022-08-23

    申请号：US16964364

    申请日：2019-06-04

    申请人： LG CHEM, LTD.

    发明人： Mi Seon Yoon ,  Sera Kim ,  Kwang Joo Lee ,  Bora Yeon ,  Sang Hwan Kim ,  Eun Yeong Kim

    IPC分类号： H01L21/683 ,  H01L21/304 ,  C09J7/29 ,  B32B27/36 ,  B32B7/14

    摘要： The present disclosure relates to a back grinding tape including a polymer resin layer including a urethane (meth)acrylate resin containing 10 to 40 wt % of a repeating unit derived from a (meth)acrylate monomer or oligomer having a glass transition temperature of 0° C. or higher, wherein the polymer resin layer has a glass transition temperature of −30° C. to 0° C. The present disclosure also relates to a method of grinding a wafer using the back grinding tape.