摘要:
The present invention describes a rewiring plate for components with connection grids of between approx. 100 nm and 10 μm, which rewiring plate includes a base body and passages with carbon nanotubes, the lower end of the passages opening out into contact connection surfaces, and the carbon nanotubes forming an electrically conductive connection from the contact connection surfaces to the front surface of the base body.
摘要:
One aspect of the invention relates to a semiconductor component with cavity structure and a method for producing the same. The semiconductor component has an active semiconductor chip with the microelectromechanical structure and a wiring structure on its top side. The microelectromechanical structure is surrounded by walls of at least one cavity. A covering, which covers the cavity, is arranged on the walls. The walls have a photolithographically patterned polymer. The covering has a layer with a polymer of identical type. In one case, the molecular chains of the polymer of the walls are crosslinked with the molecular chains of the polymer layer of the covering layer to form a dimensionally stable cavity housing.
摘要:
A semiconductor device having a plastic housing and external connections, and to a method for producing the same is disclosed. In one embodiment, the plastic housing has a housing external contour made of plastic external areas with a top side, an underside opposite to the top side, and edge sides. Lower external contact areas are arranged on the underside and upper external contact areas are arranged on the top side. Furthermore, the plastic housing has external conductor tracks along the housing external contour, by means of which the lower and upper external contact areas are electrically connected. For this purpose, the external conductor tracks have at least one jet-printed first conductor track layer made of electrically conductive material. Such jet-printed conductor track layers may also be applied to active top sides of semiconductor chips in order to bridge underlying conductor track layers.
摘要:
The present invention describes a rewiring plate for components with connection grids of between approx. 100 nm and 10 μm, which rewiring plate includes a base body and passages with carbon nanotubes, the lower end of the passages opening out into contact connection surfaces, and the carbon nanotubes forming an electrically conductive connection from the contact connection surfaces to the front surface of the base body.
摘要:
A semiconductor component is fashioned of a chip carrier comprising an approximately planar chip carrier surface on which chip carrier surface a semiconductor chip with a pressure sensor is secured, and composed of electrode terminals penetrating the chip carrier and electrically connected to the semiconductor chip, with a surface-mounted arrangement. The chip overlapping the chip carrier.
摘要:
A number of semiconductor chips each include a first main face and a second main face opposite from the first main face. The second main face includes at least one electrical contact element. The semiconductor chips are placed on a carrier. A material layer is applied into intermediate spaces between adjacent semiconductor chips. The carrier is removed and a first electrical contact layer is applied to the first main faces of the semiconductor chips so that the electrical contact layer is electrically connected with each one of the electrical contact elements.
摘要:
A semiconductor device and manufacturing method. One embodiment provides a semiconductor chip. An encapsulating material covers the semiconductor chip. A metal layer is over the semiconductor chip and the encapsulating material. At least one of a voltage generating unit and a display unit are rigidly attached to at least one of the encapsulating material and the metal layer.
摘要:
One or more embodiments relate to a method of forming a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a seed layer over the barrier layer; forming an inhibitor layer over the seed layer; removing a portion of said inhibitor layer to expose a portion of the seed layer; and selectively depositing a fill layer on the exposed seed layer.
摘要:
A method of manufacturing a semiconductor structure. One embodiment produces a substrate having at least two semiconductor chips embedded in a molded body. A layer is applied over at least one main surface of the substrate by using a jet printing process.