公开(公告)号：US09966503B2

公开(公告)日：2018-05-08

申请号：US15038562

申请日：2014-12-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Straβburg ,  Martin Mandl ,  Tilman Schimpke ,  Ion Stoll ,  Barbara Huckenbeck ,  Franz Zwaschka ,  Daniel Bichler

IPC: H01L33/50 ,  H01L33/08 ,  H01L33/32 ,  H01L33/56 ,  H01L27/15 ,  H01L33/24

CPC classification number: H01L33/502 ,  H01L27/156 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/504 ,  H01L33/505 ,  H01L33/56 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0091

Abstract: An optoelectronic semiconductor component and a method for manufacturing an optoelectronic semiconductor component are disclosed. In an embodiment, the component includes a plurality of active regions configured to generate a primary radiation and a plurality of luminescent material particles configured to convert the primary radiation into a secondary radiation, wherein the active regions are arranged spaced apart from each other, wherein each active region has a main extension direction, wherein each active region has a core region comprising a first semiconductor material, wherein each active region has an active layer covering the core region, wherein each active region has a cover layer comprising a second semiconductor material and covering the active layer, wherein at least some of the luminescent material particles are arranged between the active regions, and wherein a diameter of a majority of the luminescent material particles is smaller than a distance between two adjacent active regions.

公开(公告)号：US09859330B2

公开(公告)日：2018-01-02

申请号：US14433379

申请日：2013-09-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Norwin Von Malm ,  Martin Mandl ,  Alexander F. Pfeuffer ,  Britta Goeoetz

IPC: H01L29/18 ,  H01L27/15 ,  H01L25/075 ,  H01L29/66 ,  H01L29/78 ,  H01L33/00 ,  H01L33/12 ,  H01L33/50

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L29/66568 ,  H01L29/78 ,  H01L33/007 ,  H01L33/12 ,  H01L33/507 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2933/0091 ,  H01L2924/00

Abstract: In at least one embodiment, the method is designed for producing a light-emitting diode display (1). The method comprises the following steps: •A) providing a growth substrate (2); •B) applying a buffer layer (4) directly or indirectly onto a substrate surface (20); •C) producing a plurality of separate growth points (45) on or at the buffer layer (4); •D) producing individual radiation-active islands (5), originating from the growth points (45), wherein the islands (5) each comprise an inorganic semiconductor layer sequence (50) with at least one active zone (55) and have a mean diameter, when viewed from above onto the substrate surface (20), between 50 nm and 20 μm inclusive; and •E) connecting the islands (5) to transistors (6) for electrically controlling the islands (5).

公开(公告)号：US09735319B2

公开(公告)日：2017-08-15

申请号：US14987905

申请日：2016-01-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Mandl ,  Martin Strassburg ,  Christopher Kölper ,  Alexander F. Pfeuffer ,  Patrick Rode

IPC: H01L33/44 ,  H01L33/18 ,  H01L33/24 ,  H01L27/15 ,  H01L33/60 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/08 ,  H01L33/22 ,  H01L33/42 ,  H01L33/46

CPC classification number: H01L33/44 ,  H01L27/156 ,  H01L33/08 ,  H01L33/14 ,  H01L33/18 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60

Abstract: An optoelectronic semiconductor chip includes a multiplicity of active regions arranged at a distance from one another, and a continuous current spreading layer, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the current spreading layer covers all cover layers of the active region.

公开(公告)号：US20150021636A1

公开(公告)日：2015-01-22

申请号：US14382286

申请日：2013-02-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Mandl ,  Martin Straßburg ,  Christopher Kölper ,  Alexander Pfeuffer ,  Patrick Rode ,  Johannes Ledig ,  Richard Neumann ,  Andreas Waag

IPC: H01L33/08 ,  H01L33/62 ,  H01L33/42 ,  H01L33/18

CPC classification number: H01L33/08 ,  H01L33/16 ,  H01L33/18 ,  H01L33/24 ,  H01L33/385 ,  H01L33/42 ,  H01L33/50 ,  H01L33/62 ,  H01L2933/0016

Abstract: An optoelectronic semiconductor chip includes a number active regions that are arranged at a distance from each other and a substrate that is arranged on an underside of the active regions. One of the active regions has a main extension direction. The active region has a core region that is formed using a first semiconductor material. The active region has an active layer that covers the core region at least in directions perpendicular to the main extension direction of the active region. The active region has a cover layer that is formed using a second semiconductor material and covers the active layer at least in directions perpendicular to the main extension direction of the active region.

Abstract translation: 光电子半导体芯片包括彼此间隔一定距离设置的多个有源区和布置在有源区的下侧的衬底。 其中一个活跃区域有一个主要的延伸方向。 有源区具有使用第一半导体材料形成的芯区。 有源区域具有至少在垂直于有源区域的主延伸方向的方向上覆盖芯区域的有源层。 有源区具有使用第二半导体材料形成的覆盖层，并且至少在垂直于有源区的主延伸方向的方向上覆盖有源层。

公开(公告)号：US09257596B2

公开(公告)日：2016-02-09

申请号：US14371722

申请日：2013-01-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Straβburg ,  Enrique Calleja-Pardo ,  Steven Albert ,  Ana Maria Bengoechea Encabo ,  Miguel Angel Sanchez-Garcia ,  Martin Mandl ,  Christopher Kölper

IPC: H01L29/06 ,  H01L33/00 ,  H01L33/08 ,  H01L27/15 ,  H01L33/06 ,  H01L33/18 ,  H01L33/32

CPC classification number: H01L33/0075 ,  H01L27/153 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/32

Abstract: A light-emitting diode chip comprising:—a semiconductor body (1) having a plurality of active regions (2), wherein—at least one of the active regions (2) has at least two subregions (21 . . . 28),—the active region (2) has at least one barrier region (3) arranged between two adjacent subregions (21 . . . 28) of said at least two subregions (21 . . . 28),—the at least two subregions (21 . . . 28) emit light of mutually different colour during operation of the light-emitting diode chip,—in at least one of the subregions (21 . . . 28) the emission of light is generated electrically, and—the barrier region (3) is configured to hinder a thermally activated redistribution of charge carriers between the two adjacent subregions (21 . . . 28), is specified.

Abstract translation: 一种发光二极管芯片，包括：具有多个有源区域（2）的半导体本体（1），其中所述有源区域（2）中的至少一个具有至少两个子区域（21 ... 28） 有源区域（2）具有至少一个屏障区域（3），其布置在所述至少两个子区域（21 ... 28）的两个相邻子区域（21 ... 28）之间， - 至少两个子区域（21 ... 28）在发光二极管芯片的工作期间发射相互不同颜色的光，在至少一个子区域（21-28）中，电子发射光产生，并且屏障区域 3）被配置为阻止在两个相邻子区域（21 ... 28）之间的热激活重新分配电荷载流子。

公开(公告)号：US20150279902A1

公开(公告)日：2015-10-01

申请号：US14433379

申请日：2013-09-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Norwin Von Malm ,  Martin Mandl ,  Alexander F. Pfeuffer ,  Britta Goeoetz

IPC: H01L27/15 ,  H01L29/66 ,  H01L33/50 ,  H01L29/78 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L29/66568 ,  H01L29/78 ,  H01L33/007 ,  H01L33/12 ,  H01L33/507 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2933/0091 ,  H01L2924/00

Abstract: In at least one embodiment, the method is designed for producing a light-emitting diode display (1). The method comprises the following steps: •A) providing a growth substrate (2); •B) applying a buffer layer (4) directly or indirectly onto a substrate surface (20); •C) producing a plurality of separate growth points (45) on or at the buffer layer (4); •D) producing individual radiation-active islands (5), originating from the growth points (45), wherein the islands (5) each comprise an inorganic semiconductor layer sequence (50) with at least one active zone (55) and have a mean diameter, when viewed from above onto the substrate surface (20), between 50 nm and 20 μm inclusive; and •E) connecting the islands (5) to transistors (6) for electrically controlling the islands (5).

Abstract translation: 在至少一个实施例中，该方法被设计用于制造发光二极管显示器（1）。 该方法包括以下步骤：a）提供生长衬底（2）; •B）将缓冲层（4）直接或间接地施加到衬底表面（20）上; C）在缓冲层（4）上或缓冲层（4）上产生多个单独的生长点（45）; •D）产生源自生长点（45）的单个辐射活性岛（5），其中岛（5）各自包含具有至少一个活性区（55）的无机半导体层序列（50），并且具有 当从上方观察到基底表面（20）时，平均直径在50nm和20μm之间; 以及•E）将岛（5）连接到用于电控制岛（5）的晶体管（6）。

公开(公告)号：US20140353581A1

公开(公告)日：2014-12-04

申请号：US14371722

申请日：2013-01-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Strassburg ,  Enrique Calleja-Pardo ,  Steven Albert ,  Ana Maria Bengoechea Encabo ,  Miguel Angel Sanchez-Garcia ,  Martin Mandl ,  Christopher Kölper

IPC: H01L33/00 ,  H01L33/32 ,  H01L27/15 ,  H01L33/06

CPC classification number: H01L33/0075 ,  H01L27/153 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/32

Abstract: A light-emitting diode chip comprising:—a semiconductor body (1) having a plurality of active regions (2), wherein—at least one of the active regions (2) has at least two subregions (21 . . . 28),—the active region (2) has at least one barrier region (3) arranged between two adjacent subregions (21 . . . 28) of said at least two subregions (21 . . . 28),—the at least two subregions (21 . . . 28) emit light of mutually different colour during operation of the light- emitting diode chip,—in at least one of the subregions (21 . . . 28) the emission of light is generated electrically, and—the barrier region (3) is configured to hinder a thermally activated redistribution of charge carriers between the two adjacent subregions (21 . . . 28), is specified.

Abstract translation: 一种发光二极管芯片，包括：具有多个有源区域（2）的半导体本体（1），其中所述有源区域（2）中的至少一个具有至少两个子区域（21 ... 28） 有源区域（2）具有至少一个屏障区域（3），其布置在所述至少两个子区域（21 ... 28）的两个相邻子区域（21 ... 28）之间， - 至少两个子区域（21 ... 28）在发光二极管芯片的工作期间发射彼此不同颜色的光，在至少一个子区域（21-28）中，电子发射光产生，并且屏障区域 3）被配置为阻止在两个相邻子区域（21 ... 28）之间的热激活重新分配电荷载流子。

公开(公告)号：US10608081B2

公开(公告)日：2020-03-31

申请号：US15312169

申请日：2015-05-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Mandl ,  Tilman Schimpke

IPC: H01L29/06 ,  H01L21/304 ,  H01L33/18 ,  H01L33/00 ,  H01L21/308 ,  H01L29/20 ,  H01L33/08 ,  H01L33/22 ,  H01L33/24

Abstract: The invention relates to a method for laterally structuring a structured layer (2) with a plurality of three-dimensional structure elements (20), having the following steps: a) providing the structured layer with the three-dimensional structure elements; b) forming a laterally structured covering layer (3) on the structured layer in order to define at least one structured layer region (4) to be removed; and c) removing the structured layer region to be removed by means of a force acting on the structure elements in the region to be removed. The invention further relates to a semiconductor component (1).

公开(公告)号：US10446723B2

公开(公告)日：2019-10-15

申请号：US15532486

申请日：2015-12-02

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Rainer Butendeich ,  Ion Stoll ,  Martin Mandl ,  Martin Strassburg

IPC: H01L33/50 ,  H01L33/08 ,  H01L33/18

Abstract: The invention relates to an optoelectronic element comprising a semiconductor chip (12) that emits a blue-green light (4) during operation and has at least one light passage surface (12a) through which the blue-green light (4) emitted during operation passes and comprising a conversion element (3) which comprises fluorescent particles (31), in particular fluorescent particles of only one type, and which is arranged on the light passage surface (12a) at least in some areas. The fluorescent particles (31) at least partly convert the blue-green light (4) into a red light (5), and the optoelectronic element emits a white mixed light (6) which contains non-converted components of the blue-green light (4) and components of the red light (5).

公开(公告)号：US10193024B2

公开(公告)日：2019-01-29

申请号：US15758382

申请日：2016-09-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Rainer Hartmann ,  Martin Mandl ,  Simeon Katz ,  Andreas Rückerl

IPC: H01L33/44 ,  H01L33/38 ,  H01L31/00 ,  H01L33/00

Abstract: An optoelectronic semiconductor chip includes an active region arranged between a first semiconductor layer and a second semiconductor layer and generates or receives electromagnetic radiation, the first semiconductor layer electrically conductively connects to a first contact, the first contact is formed on a front side of the chip next to the active region, the second semiconductor layer electrically conductively connects to a second contact, the second contact is arranged on the front side of the chip next to the active region, and an electrically insulating separating layer that electrically insulates a rear side of the chip from the active region of the semiconductor chip, and an electrically insulating separating layer includes at least one first separating layer having at least one atomic layer or at least one molecular layer and is deposited by atomic layer deposition or molecular layer deposition.