公开(公告)号：US20180316374A1

公开(公告)日：2018-11-01

申请号：US16029432

申请日：2018-07-06

Applicant: QUALCOMM Incorporated

Inventor： Changhan Yun ,  Chengjie Zuo ,  Mario Velez ,  Niranjan Sunil Mudakatte ,  Shiqun Gu ,  Jonghae Kim ,  David Berdy

IPC: H04B1/16 ,  H01L49/02 ,  H01L23/522 ,  H01L23/00 ,  H01L27/01 ,  H01L23/498 ,  H01L23/66 ,  H01L21/48 ,  H04B1/00

CPC classification number: H04B1/1638 ,  H01F17/0013 ,  H01L21/4853 ,  H01L21/486 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5223 ,  H01L23/64 ,  H01L23/66 ,  H01L24/19 ,  H01L24/20 ,  H01L27/01 ,  H01L28/10 ,  H01L28/40 ,  H01L2223/6616 ,  H01L2223/6672 ,  H01L2223/6677 ,  H01L2223/6688 ,  H01L2224/04105 ,  H01L2224/24195 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15153 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19105 ,  H04B1/006 ,  H05K1/165 ,  H05K1/185 ,  H05K3/4605 ,  H05K2201/09536 ,  H05K2201/0959 ,  H05K2201/097 ,  H05K2201/09827

Abstract: In an illustrative example, an apparatus includes a passive-on-glass (POG) device integrated within a glass substrate. The apparatus further includes a semiconductor die integrated within the glass substrate.

公开(公告)号：US10074625B2

公开(公告)日：2018-09-11

申请号：US14859323

申请日：2015-09-20

Applicant: QUALCOMM Incorporated

Inventor： Mario Francisco Velez ,  David Francis Berdy ,  Changhan Hobie Yun ,  Jonghae Kim ,  Chengjie Zuo ,  Daeik Daniel Kim ,  Je-Hsiung Jeffrey Lan ,  Niranjan Sunil Mudakatte ,  Robert Paul Mikulka

IPC: H01L23/00 ,  H01L23/13 ,  H01L23/498

CPC classification number: H01L24/17 ,  H01L23/13 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/09 ,  H01L24/11 ,  H01L2224/023 ,  H01L2224/0905

Abstract: An integrated circuit device in a wafer level package (WLP) includes ball grid array (BGA) balls fabricated with cavities filled with adhesives for improved solder joint reliability.

公开(公告)号：US10069474B2

公开(公告)日：2018-09-04

申请号：US15137662

申请日：2016-04-25

Applicant: QUALCOMM Incorporated

Inventor： Changhan Hobie Yun ,  Chengjie Zuo ,  Daeik Daniel Kim ,  Mario Francisco Velez ,  Niranjan Sunil Mudakatte ,  Je-Hsiung Jeffrey Lan ,  David Francis Berdy ,  Yunfei Ma ,  Robert Paul Mikulka ,  Jonghae Kim

IPC: H03H9/05 ,  H03H9/10 ,  H03H9/15 ,  H03H3/02 ,  H01F17/02 ,  H05K1/18 ,  H03H9/54 ,  H05K3/46 ,  H05K1/03 ,  H05K3/00 ,  H03H3/08 ,  H03H9/64 ,  H01F17/00 ,  H03H7/01 ,  H03H7/46

Abstract: A device includes an acoustic resonator embedded within an encapsulating structure that at least partially encapsulates the acoustic resonator. The device includes an inductor electrically connected to the acoustic resonator. At least a portion of the inductor is embedded in the encapsulating structure.

公开(公告)号：US10026546B2

公开(公告)日：2018-07-17

申请号：US15160776

申请日：2016-05-20

Applicant: QUALCOMM Incorporated

Inventor： Changhan Hobie Yun ,  Chengjie Zuo ,  Daeik Daniel Kim ,  Mario Francisco Velez ,  Niranjan Sunil Mudakatte ,  Jonghae Kim ,  David Francis Berdy

IPC: H03H7/46 ,  H01F27/40 ,  H01F27/28 ,  H01F27/29 ,  H01F41/02 ,  H03H7/01

Abstract: An apparatus includes a substrate and a three-dimensional (3D) wirewound inductor integrated within the substrate. The apparatus further includes a capacitor coupled to the 3D wirewound inductor.

公开(公告)号：US10002700B2

公开(公告)日：2018-06-19

申请号：US13778191

申请日：2013-02-27

Applicant: QUALCOMM Incorporated

Inventor： Je-Hsiung Lan ,  Chi Shun Lo ,  Jonghae Kim ,  John H. Hong

IPC: H01F5/00 ,  H01F27/28 ,  H01F19/00 ,  H01F41/04 ,  H01L49/02 ,  H01L23/522 ,  H05K1/14 ,  H05K3/34

CPC classification number: H01F19/00 ,  H01F5/003 ,  H01F27/2804 ,  H01F41/041 ,  H01F2027/2809 ,  H01L23/5227 ,  H01L28/10 ,  H01L2924/0002 ,  H05K1/144 ,  H05K3/3436 ,  H05K2201/041 ,  H05K2201/0723 ,  Y10T29/4902 ,  H01L2924/00

Abstract: In a particular embodiment, a device includes a low-loss substrate, a first inductor structure, and an air-gap. The first inductor structure is between the low-loss substrate and a second inductor structure. The first inductor structure is aligned with the second inductor structure to form a transformer. The air-gap is between the first inductor structure and the second inductor structure.

公开(公告)号：US20170365570A1

公开(公告)日：2017-12-21

申请号：US15184841

申请日：2016-06-16

Applicant: QUALCOMM Incorporated

Inventor： Daeik Kim ,  Chengjie Zuo ,  Mario Velez ,  Changhan Yun ,  Jonghae Kim

IPC: H01L23/00 ,  H01L21/78 ,  H01L21/48 ,  H01L21/683

CPC classification number: H01L21/6836 ,  H01L21/4846 ,  H01L21/78 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/05647 ,  H01L2224/32265 ,  H01L2224/94 ,  H01L2924/10156 ,  H01L2924/10157 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19102 ,  H01L2224/83 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00014

Abstract: Some implementations provide a device that includes a passive component and a substrate coupled to the passive component, where a surface of the substrate comprises a first irradiated portion. In some implementations, the first irradiated portion is located in an offset portion of the substrate. Some implementations provide an integrated device that includes a device layer and a substrate coupled to the device layer, where a surface of the substrate comprises a first irradiated portion. In some implementations, the first irradiated portion is located in an offset portion of the substrate.

公开(公告)号：US20170279469A1

公开(公告)日：2017-09-28

申请号：US15080472

申请日：2016-03-24

Applicant: QUALCOMM Incorporated

Inventor： Yunfei Ma ,  Chengjie Zuo ,  David Berdy ,  Daeik Kim ,  Changhan Yun ,  Je-Hsiung Lan ,  Mario Velez ,  Niranjan Sunil Mudakatte ,  Robert Mikulka ,  Jonghae Kim

IPC: H04B1/00 ,  H04B1/40 ,  H04L5/14 ,  H04B1/04 ,  H04B1/3827

CPC classification number: H04B1/0057 ,  H03H7/09 ,  H03H7/463 ,  H04B1/04 ,  H04B1/3827 ,  H04B1/40 ,  H04B2001/0416 ,  H04L5/14

Abstract: An RF diplexer is provided with an integrated diplexer that shares a primary inductor included in a channel within the RF diplexer.

公开(公告)号：US09692386B2

公开(公告)日：2017-06-27

申请号：US14177620

申请日：2014-02-11

Applicant: QUALCOMM Incorporated

Inventor： Chengjie Zuo ,  Mario Francisco Velez ,  Jonghae Kim ,  Daeik Daniel Kim ,  Changhan Hobie Yun

IPC: H03H7/01 ,  H01F27/28 ,  H01L23/522

CPC classification number: H03H7/0115 ,  H01F27/2866 ,  H01L23/5223 ,  H01L23/5227 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48464 ,  Y10T29/417 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An inductor is provided on a substrate that includes a capacitor. The inductor comprises a series of wire loops. An end of the wire loop is wire bonded to the capacitor.

公开(公告)号：US09634645B2

公开(公告)日：2017-04-25

申请号：US13829784

申请日：2013-03-14

Applicant: QUALCOMM Incorporated

Inventor： Je-Hsiung Lan ,  Chi Shun Lo ,  Jonghae Kim ,  Mario Francisco Velez ,  John H. Hong

IPC: H03H11/28 ,  H01L23/522 ,  H01L27/13 ,  H01L49/02 ,  H01L23/64 ,  H01L27/12 ,  H01L23/66 ,  H01F19/08 ,  H01F27/28

CPC classification number: H03H11/28 ,  H01F41/02 ,  H01F2019/085 ,  H01F2027/2809 ,  H01L23/5227 ,  H01L23/645 ,  H01L23/66 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/13 ,  H01L28/10 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/30111 ,  H01L2924/00

Abstract: A particular device includes a replica circuit disposed above a dielectric substrate. The replica circuit includes a thin film transistor (TFT) configured to function as a variable capacitor or a variable resistor. The device further includes a transformer disposed above the dielectric substrate and coupled to the replica circuit. The transformer is configured facilitate an impedance match between the replica circuit and an antenna.

公开(公告)号：US09502586B1

公开(公告)日：2016-11-22

申请号：US14853931

申请日：2015-09-14

Applicant: QUALCOMM Incorporated

Inventor： Daeik Daniel Kim ,  David Francis Berdy ,  Je-Hsiung Jeffrey Lan ,  Changhan Hobie Yun ,  Jonghae Kim

IPC: H01L29/93 ,  H01L27/108 ,  H01L21/70 ,  H01L27/08 ,  H01L29/66

CPC classification number: H01L27/0808 ,  H01L21/7624 ,  H01L21/76264 ,  H01L21/78 ,  H01L27/1203 ,  H01L29/66174 ,  H01L29/66181 ,  H01L29/93

Abstract: A symmetric varactor structure may include a first varactor component. The first varactor component may include a gate operating as a second plate, a gate oxide layer operating as a dielectric layer and a body operating as a first plate of an area modulating capacitor. In addition, doped regions may surround the body of the first varactor component. The first varactor component may be supported on a backside by an isolation layer. The symmetric varactor structure may also include a second varactor component electrically coupled to the backside of the first varactor component through a backside conductive layer.

Abstract translation: 对称变容二极管结构可以包括第一变容二极管组件。 第一变容二极管分量可以包括作为第二板操作的栅极，作为电介质层工作的栅极氧化物层和作为区域调制电容器的第一板工作的主体。 此外，掺杂区域可围绕第一变容二极管部件的主体。 第一变容二极管组件可以由隔离层在背面支撑。 对称变容二极管结构还可以包括通过背侧导电层电耦合到第一变容二极管部件的背侧的第二变容二极管部件。