摘要:
A method of manufacturing a semiconductor wafer for dicing includes providing a semiconductor wafer including a substrate and a plurality of upper layers on the substrate that form a formation of die areas. The formation is arranged so that adjacent die areas are separated by a path for a dicing tool. Within each path, a pair of spaced apart lines is fabricated. Each line defines a dicing edge of a respective path and has at least one trench extending between a top surface of the wafer and the substrate. Each trench is filled with a stress absorbing material for reducing die tool induced stress on the die areas during dicing.
摘要:
A semiconductor pressure sensor device having a pressure-sensing die electrically connected to a microcontrol unit (MCU) using either through silicon vias (TSVs) or flip-chip bumps. An active surface of the pressure-sensing die is in facing relationship with the MCU. These embodiments avoid the need to used bonds to electrically connect the pressure-sensing die to the MCU, thereby saving time, reducing size, and reducing cost.
摘要:
A method of packaging a pressure sensing die includes providing a lead frame with lead fingers and attaching the pressure sensing die to the lead fingers such that bond pads of the die are electrically coupled to the lead fingers and a void is formed between the die and the lead fingers. A gel material is dispensed via an underside of the lead frame into the void such that the gel material substantially fills the void. The gel material is then cured and the die and the lead frame are encapsulated with a mold compound. The finished package does not include a metal lid.
摘要:
A method of manufacturing a semiconductor wafer for dicing includes providing a semiconductor wafer including a substrate and a plurality of upper layers on the substrate that form a formation of die areas. The formation is arranged so that adjacent die areas are separated by a path for a dicing tool within each path, a pair of spaced apart lines is fabricated. Each line defines a dicing edge of a respective path and has at least one trench extending between a top surface of the wafer and the substrate. Each trench is filled with a stress absorbing material for reducing die tool induced stress on the die areas during dicing.
摘要:
A semiconductor package includes a first lead frame type having a first type of package leads and a pre-molded portion, and a second lead frame type having a second type of package leads that surround a die pad and are supported by the pre-molded portion. An integrated circuit is attached to the die pad and electrically connected to the first and second types of leads with bond wires. A mold compound, which forms a mold cap, covers the first and second lead frame types, the integrated circuit and the bond wires. The first lead frame type may be a QFP type and the second lead frame type may be a QFN type.
摘要:
Assembling a surface mount semiconductor device includes providing a lead frame structure with peripheral leads and additional bottom face contacts integral with frame members. Outer portions of the bottom face contact members are interposed between inner portions of adjacent pairs of the peripheral leads. A package body is formed by encapsulating the lead frame structure in which the frame members are positioned outside a side edge surface. The peripheral leads and the bottom face contact members project between the side edge surface of the package body and the frame members. The frame members are cut and the peripheral leads and the bottom face contact members are separated and electrically isolated from each other.
摘要:
A semiconductor package includes a first lead frame type having a first type of package leads and a pre-molded portion, and a second lead frame type having a second type of package leads that surround a die pad and are supported by the pre-molded portion. An integrated circuit is attached to the die pad and electrically connected to the first and second types of leads with bond wires. A mold compound, which forms a mold cap, covers the first and second lead frame types, the integrated circuit and the bond wires. The first lead frame type may be a QFP type and the second lead frame type may be a QFN type.
摘要:
A method of making an integrated circuit package, such as a ball grid array, includes providing a flexible tape that has first and second sets of bond pads on respective first and second surfaces thereof. A carrier is attached to the first surface of the flexible tape. Then conductive pillars are formed on the second set of bond pads and an intermediate layer of polymeric compound is deposited on the second surface of the flexible tape. After the compound has cured, a surface of the intermediate layer is ground to expose ends of the conductive pillars to form a sub-assembly comprising the flexible tape and the intermediate layer. Then the carrier is removed from the sub-assembly, thereby creating an interposer. The interposer is attached to a substrate and at least one die is attached to the interposer.
摘要:
A method of assembling semiconductor devices includes providing a structure that includes an array of conductive frame members beside an array of apertures and an array of conductive vias that are exposed at a first face and extend towards a second face. An array of semiconductor dies is positioned in the array of apertures with their active faces positioned in the first face of the structure. The assembly is encapsulated from the second face of the structure and a redistribution layer is formed on the first face of the structure and the active faces of the die. Material is removed from the back face of the encapsulated array to expose the vias at the back face for connection through a further redistribution layer formed on the back face to electronic components stacked vertically on the further redistribution layer.
摘要:
A method of forming a semiconductor package (32) includes etching a conductive sheet (10) to form a first interconnection system (12). An integrated circuit (IC) die (22) is placed on and electrically connected to the first interconnection system (12). Next, a molding operation is performed to encapsulate the IC die (22), the electrical connections (24, 26) and at least a portion of the first interconnection system (12). A portion (20) of the conductive sheet (10) is then removed to expose a surface (30) of the first interconnection system (12). A second interconnection system (34) then is formed over the exposed surface (30) of the first interconnection system (12).