Power MOSFET package
    11.
    发明授权
    Power MOSFET package 有权
    功率MOSFET封装

    公开(公告)号:US08766431B2

    公开(公告)日:2014-07-01

    申请号:US13828537

    申请日:2013-03-14

    Applicant: Xintec Inc.

    Abstract: A power MOSFET package includes a semiconductor substrate having opposite first and second surfaces, having a first conductivity type, and forming a drain region, a doped region extending downward from the first surface and having a second conductivity type, a source region in the doped region and having the first conductivity type, a gate overlying or buried under the first surface, wherein a gate dielectric layer is between the gate and the semiconductor substrate, a first conducting structure overlying the semiconductor substrate, having a first terminal, and electrically connecting the drain region, a second conducting structure overlying the semiconductor substrate, having a second terminal, and electrically connecting the source region, a third conducting structure overlying the semiconductor substrate, having a third terminal, and electrically connecting the gate, wherein the first, the second, and the third terminals are substantially coplanar, and a protection layer between the semiconductor substrate and the terminals.

    Abstract translation: 功率MOSFET封装包括具有相反的第一和第二表面的半导体衬底,具有第一导电类型,并形成漏极区,从第一表面向下延伸并具有第二导电类型的掺杂区,掺杂区中的源极区 并且具有第一导电类型,覆盖或掩埋在第一表面下方的栅极,其中栅极电介质层位于栅极和半导体衬底之间,覆盖半导体衬底的第一导电结构,具有第一端子,并且电连接漏极 区域,覆盖半导体衬底的第二导电结构,具有第二端子,并且电连接源极区域,覆盖半导体衬底的第三导电结构,具有第三端子和电连接栅极,其中第一,第二, 并且第三端子基本上共面,并且第三端子之间的保护层 e半导体衬底和端子。

    SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME
    12.
    发明申请
    SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME 审中-公开
    半导体封装及其制造方法

    公开(公告)号:US20130127001A1

    公开(公告)日:2013-05-23

    申请号:US13674264

    申请日:2012-11-12

    Applicant: Xintec Inc.

    Abstract: A semiconductor package is provided, including a silicon-containing substrate, a photo-sensor chip disposed on the silicon-containing substrate, a plurality of conductive lines electrically connected to the silicon-containing substrate and the photo-sensor chip, an encapsulating layer encapsulating the photo-sensor chip and the conductive lines, and a colloid lens disposed on the encapsulating layer. With the photo-sensor chip stacked on the silicon-containing substrate, a circuit board may have a reduced region that is occupied by the semiconductor package. A method of fabricating the semiconductor package is also provided.

    Abstract translation: 提供了一种半导体封装件,包括含硅衬底,设置在含硅衬底上的光电传感器芯片,与该含硅衬底和光电传感器芯片电连接的多个导电线,封装层 光传感器芯片和导电线,以及设置在封装层上的胶体透镜。 利用光电传感器芯片堆叠在含硅衬底上,电路板可以具有被半导体封装占据的减小的区域。 还提供了制造半导体封装的方法。

    Chip package and method for forming the same

    公开(公告)号:US10157875B2

    公开(公告)日:2018-12-18

    申请号:US14709216

    申请日:2015-05-11

    Applicant: XINTEC INC.

    Abstract: A chip package including a first substrate is provided. The first substrate includes a sensing device. A second substrate is attached onto the first substrate and includes an integrated circuit device. A first conductive structure is electrically connected to the sensing device and the integrated circuit device through a redistribution layer disposed on the first substrate. An insulating layer covers the first substrate, the second substrate and the redistribution layer. The insulating layer has a hole therein and a second conductive structure is disposed under the bottom of the hole. A method for forming the chip package is also provided.

    Chip scale package structure and manufacturing method thereof
    20.
    发明授权
    Chip scale package structure and manufacturing method thereof 有权
    芯片级封装结构及其制造方法

    公开(公告)号:US09281243B2

    公开(公告)日:2016-03-08

    申请号:US14172832

    申请日:2014-02-04

    Applicant: XINTEC INC.

    Abstract: A chip scale package structure includes a chip, a dam unit, a board body, a plurality of first conductors, an encapsulating glue, a plurality of first conductive layers, an isolation layer, and a plurality of first electrodes. The dam unit is disposed on the surface of the chip. The board body is located on the dam unit. The first conductors are respectively in electrical contact with the conductive pads of the chip. The encapsulating glue covers the surface of the chip, and the board body and the first conductors are packaged in the encapsulating glue. The first conductive layers are located on the surface of the encapsulating glue opposite to the chip and respectively in electrical contact with the first conductors. The isolation layer is located on the encapsulating glue and the first conductive layers. The first electrodes are respectively in electrical contact with the first conductive layers.

    Abstract translation: 芯片级封装结构包括芯片,堤坝单元,板体,多个第一导体,封装胶,多个第一导电层,隔离层和多个第一电极。 大坝单元设置在芯片的表面上。 板体位于坝体上。 第一导体分别与芯片的导电焊盘电接触。 封装胶覆盖芯片的表面,并且板体和第一导体封装在封装胶中。 第一导电层位于与芯片相对的封装胶的表面上,分别与第一导体电接触。 隔离层位于封装胶和第一导电层上。 第一电极分别与第一导电层电接触。

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