公开(公告)号：US08993449B2

公开(公告)日：2015-03-31

申请号：US13386213

申请日：2010-08-12

申请人： Yasuhiro Morikawa ,  Koukou Suu

发明人： Yasuhiro Morikawa ,  Koukou Suu

IPC分类号： H01L21/302 ,  H01L21/3065

CPC分类号： H01L21/30655

摘要： There is provided an etching method which can form trenches or via holes having desired aspect ratios and shapes in a to-be-processed object made of silicon. The etching method includes: a hydrogen halide-containing gas-based etching step of etching a silicon substrate by introducing a hydrogen halide-containing gas into a vacuum chamber; a fluorine-containing gas-based etching step of etching the silicon substrate by introducing a fluorine-containing gas into the vacuum chamber; a protective film formation step forming a protective film on the silicon substrate by sputtering a solid material; and a protective film removal step of removing part of the protective film by applying radio frequency bias power to a substrate electrode. The fluorine-containing gas-based etching step, the protective film formation step, and the protective film removal step are repeatedly performed in this order.

摘要翻译： 提供了一种蚀刻方法，其可以在由硅制成的待处理物体中形成具有期望的纵横比和形状的沟槽或通孔。 蚀刻方法包括：含卤化氢的气体基蚀刻步骤，通过将含卤化氢的气体引入真空室来蚀刻硅衬底; 含氟气体蚀刻步骤，通过将真空室中引入含氟气体来蚀刻硅衬底; 通过溅射固体材料在硅衬底上形成保护膜的保护膜形成步骤; 以及通过对基板电极施加射频偏置功率来去除部分保护膜的保护膜去除步骤。 依次重复进行含氟气体蚀刻工序，保护膜形成工序和保护膜除去工序。

公开(公告)号：US20100219158A1

公开(公告)日：2010-09-02

申请号：US12301786

申请日：2007-05-16

申请人： Yasuhiro Morikawa ,  Koukou Suu

发明人： Yasuhiro Morikawa ,  Koukou Suu

IPC分类号： C23F1/00

CPC分类号： H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802

摘要： A method for dry etching an interlayer insulating film with an ArF resist or KrF resist thereon comprises dry etching fine features into the interlayer insulating film with an etching gas in such a manner as to form a polymer film on the ArF or KrF resist from the etching gas, wherein the etching gas is introduced under a pressure of 0.5 Pa or less, and wherein a Fourier transform infrared spectrum of the polymer film includes a C—F bond peak at about 1200 cm−1, a C—N bond peak at about 1600 cm−1, and a C—H bond peak at about 3300 cm−1.

摘要翻译： 用ArF抗蚀剂或KrF抗蚀剂干蚀刻层间绝缘膜的方法包括用蚀刻气体将精细特征干蚀刻到层间绝缘膜中，以便从蚀刻法在ArF或KrF抗蚀剂上形成聚合物膜 气体，其中在0.5Pa或更小的压力下引入蚀刻气体，并且其中聚合物膜的傅里叶变换红外光谱包括在约1200cm -1处的C-F键峰，约在约100cm -1处的C-N键峰 1600cm -1和约3300cm -1处的C-H键峰。

公开(公告)号：US20090277873A1

公开(公告)日：2009-11-12

申请号：US12440671

申请日：2007-09-05

申请人： Yasuhiro Morikawa ,  Koukou Suu

发明人： Yasuhiro Morikawa ,  Koukou Suu

IPC分类号： H01L21/3065 ,  B05D5/12 ,  C23C14/34

CPC分类号： H01J37/3266 ,  H01J37/32091 ,  H01J37/32642 ,  H01J2237/334

摘要： The object of the present invention is to provide a dry etching method which permits the reduction of the amount of any etching product formed during the etching process to thus improve the in-plane etching uniformity with respect to an object to be etched. The dry etching method comprises the steps of providing an electrode equipped with an electrode-presser member which at least comprises a surface layer composed of an yttrium-containing oxide and which is disposed on the peripheral region of the upper surface of the electrode, placing a substrate on the electrode and then subjecting the substrate to dry etching, while preventing the formation of any etching product at the peripheral region of the electrode.

摘要翻译： 本发明的目的是提供一种干蚀刻方法，其允许减少在蚀刻工艺期间形成的任何蚀刻产物的量，从而提高相对于待蚀刻对象的面内蚀刻均匀性。 干式蚀刻方法包括以下步骤：提供具有电极压紧构件的电极，所述电极压紧构件至少包括由含钇氧化物构成的表面层，并且设置在电极的上表面的周边区域， 基板，然后对基板进行干蚀刻，同时防止在电极的周边区域形成任何蚀刻产物。

公开(公告)号：US08262798B2

公开(公告)日：2012-09-11

申请号：US10911639

申请日：2004-08-05

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/52 ,  C23C16/455 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4557 ,  C23C16/4411 ,  C23C16/45565 ,  C23C16/45572

摘要： The present invention herein provides a shower head whose temperature can be controlled in consideration of the film-forming conditions selected and a thin film-manufacturing device which permits the stable and continuous formation of thin films including only a trace amount of particles while reproducing a good film thickness distribution and compositional distribution, and a high film-forming rate and which is excellent in the productivity and the mass-producing ability as well as a method for the preparation of such a film. The shower head is so designed that the shower head structure is incorporated into an upper cap of a film-forming vessel, that a heat-exchange means is disposed in the upper cap to thus control the temperature of the upper cap and to in turn allow heat-exchange to occur at the contact surface between a disk-like shower plate constituting the shower head surface and the upper cap and that the temperature of the shower head can be controlled in consideration of the film-forming conditions selected. A thin film-manufacturing device is equipped with the shower head in its film-forming vessel and a thin film is prepared using the device.

摘要翻译： 本发明提供了一种喷淋头，其温度可以根据所选择的成膜条件进行控制，薄膜制造装置允许稳定且连续地形成仅包含微量颗粒的薄膜，同时再现良好的 膜厚分布和组成分布，成膜率高，生产性和批量生产能力优异的方法以及制备这种膜的方法。 淋浴头被设计成将喷头结构结合到成膜容器的上盖中，将热交换装置设置在上盖中，从而控制上盖的温度，并且进而允许 考虑到所选择的成膜条件，可以在构成淋浴头表面的盘形淋浴板和上盖之间的接触表面处发生热交换，并且可以控制喷淋头的温度。 薄膜制造装置在其成膜容器中配备有喷头，并且使用该装置制备薄膜。

公开(公告)号：US20100213170A1

公开(公告)日：2010-08-26

申请号：US12597602

申请日：2008-06-19

申请人： Yutaka Kokaze ,  Mitsuhiro Endou ,  Masahisa Ueda ,  Koukou Suu ,  Toshiya Miyazaki ,  Toshiyuki Nakamura

发明人： Yutaka Kokaze ,  Mitsuhiro Endou ,  Masahisa Ueda ,  Koukou Suu ,  Toshiya Miyazaki ,  Toshiyuki Nakamura

IPC分类号： C23F4/00

CPC分类号： H01L21/68735 ,  C23F4/00 ,  G11C11/22 ,  H01J37/321 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/3266 ,  H01J2237/022 ,  H01J2237/2001 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/67069 ,  H01L27/11507 ,  H01L27/1159

摘要： An etching method which uses an apparatus having a chamber in which an etching gas is excited by plasma; a table arranged in the chamber which heats a substrate mounted thereon; and a frame member which includes etching-endurable material which is arranged around the table, and which has an upper surface arranged at a position lower than an upper surface of the table, the etching method including: arranging the substrate on the upper surface of the table such that a peripheral part of the substrate projects above the table; and arranging the substrate such that a ratio of a height from the upper surface of the frame member to a bottom surface of the substrate and a projecting length from a side surface of the table to an outer circumference of the substrate is 1.5 or more

摘要翻译： 一种蚀刻方法，其使用具有其中蚀刻气体被等离子体激发的室的装置; 设置在所述室中的加热安装在其上的基板的台; 以及框架构件，其包括布置在工作台周围的耐腐蚀材料，并且具有布置在比工作台的上表面低的位置的上表面，所述蚀刻方法包括：将所述衬底布置在所述衬底的上表面上 使得基板的周边部分在工作台上方突出; 以及将所述基板从所述框架构件的上表面的高度与所述基板的底面的高度与从所述台的侧面到所述基板的外周的突出长度的比例设定为1.5以上

公开(公告)号：US20100038234A1

公开(公告)日：2010-02-18

申请号：US12519712

申请日：2007-12-17

申请人： Isao Kimura ,  Takehito Jinbo ,  Shin Kikuchi ,  Yutaka Nishioka ,  Koukou Suu

发明人： Isao Kimura ,  Takehito Jinbo ,  Shin Kikuchi ,  Yutaka Nishioka ,  Koukou Suu

IPC分类号： C23C14/34 ,  C23C14/06

CPC分类号： H01L41/083 ,  C23C14/0036 ,  C23C14/088 ,  H01L41/1876 ,  H01L41/316

摘要： A multilayer thin film formation method and a multilayer thin film formation apparatus that improve dielectric characteristics and piezoelectric characteristics of a thin film formed from a lead-based perovskite complex oxide. The multilayer thin film formation method includes formation of a lower electrode layer (32b) containing a noble metal above a substrate (S) by sputtering a lower electrode layer target (TG2), and superposing a lead-based complex oxide layer (33) on the lower electrode layer (32b) by sputtering an oxide layer target (TG3) containing lead. The lower electrode layer (32b) has a thickness restricted to 10 to 30 nm, and the lead-based complex oxide layer (33) has a thickness restricted to 0.2 and 5.0 μm.

摘要翻译： 一种提高由铅系钙钛矿复合氧化物形成的薄膜的介电特性和压电特性的多层薄膜形成方法和多层薄膜形成装置。 多层薄膜形成方法包括通过溅射下电极层靶（TG2），在基底（S）上方形成含有贵金属的下电极层（32b），并将引线基复合氧化物层（33）叠加在 通过溅射含有铅的氧化物层靶（TG3）来形成下电极层（32b）。 下部电极层（32b）的厚度为10〜30nm，铅系复合氧化物层（33）的厚度为0.2〜5.0μm。

公开(公告)号：US20050199182A1

公开(公告)日：2005-09-15

申请号：US10612149

申请日：2003-07-03

申请人： Takeshi Masuda ,  Masahiko Kajinuma ,  Takakazu Yamada ,  Hiroto Uchida ,  Masaki Uematsu ,  Koukou Suu

发明人： Takeshi Masuda ,  Masahiko Kajinuma ,  Takakazu Yamada ,  Hiroto Uchida ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  C30B25/14 ,  H01L21/205 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/409 ,  C23C16/45512 ,  C23C16/45519 ,  C23C16/45589 ,  C30B25/02 ,  C30B25/14 ,  C30B29/60

摘要： A thin film-forming apparatus, for ensuring uniform plane distribution of properties of a film formed on a substrate surface, has a gas-supply port 24a supplying a gas mixture from a gas-mixing chamber 24 to a shower head 25. The port is arranged at the peripheral portion on the bottom face of the gas-mixing chamber so that the gas mixture flows from the upper peripheral region of the head towards the center thereof. An exhaust port 32 discharging the exhaust gas generated in the film-forming chamber 3 is arranged at a position lower than the level of a stage 31 during film-formation directing the exhaust gas towards the side wall of the chamber 3 and discharging the exhaust gas through the exhaust port. The stage 31 is designed to move freely up and down to adjust the distance between the shower head 25 and substrate S.

摘要翻译： 用于确保形成在基板表面上的膜的性质的均匀平面分布的薄膜形成装置具有将气体混合物从气体混合室24供应到喷淋头25的供气口24a。 该端口布置在气体混合室的底面的周边部分处，使得气体混合物从头部的上周边区域朝向其中心流动。 将成膜室3内产生的废气排出的排气口32配置在低于气缸台31的高度的位置，在成膜期间将排气朝着室3的侧壁排出，排出废气 通过排气口。 舞台31被设计成上下移动以调节淋浴头25和基底S之间的距离。

公开(公告)号：US20050059246A1

公开(公告)日：2005-03-17

申请号：US10910807

申请日：2004-08-04

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/302 ,  H01L21/461

CPC分类号： C23C16/4557 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/45572

摘要： The present invention herein provide a thin film-manufacturing device and a thin film-manufacturing method which are excellent in the mass-production ability and productivity, which permit the stable and continuous production of films over a long period of time while reproducing a good film thickness distribution, a good compositional distribution and a high film-forming rate and controlling the number of particles generated during the film-formation to a lower level. The device is one serving as a CVD device in which a film-forming gas is introduced into a reaction chamber from the upper portion of the chamber serving as a reaction space, through a shower head and a film is formed on a heated substrate, wherein the device is so designed that the upper reaction space is constructed by the substrate-supporting stage which is free of any rotational motion or free of any elevating motion, the shower head and a deposition-inhibitory plate, that the substrate-supporting stage and the deposition-inhibitory plate are so arranged as to form, between them, a concentric gap or interstice serving as a gas-exhaust path through which an inert gas can flow from the upper portion of the gas-exhaust path along the deposition-inhibitory plate and that a lower space is formed on the secondary side of the gas-exhaust path.

摘要翻译： 本发明提供一种薄膜制造装置和薄膜制造方法，其制造能力和生产率优异，能够长时间稳定且连续地生产薄膜，同时再生良好的薄膜 厚度分布，良好的组成分布和高成膜速率，并且将成膜期间产生的颗粒数控制到更低的水平。 该装置是用作CVD装置的装置，其中成膜气体通过喷淋头从用作反应空间的室的上部引入反应室，并且在加热的基板上形成膜，其中 该设备被设计成使得上反应空间由没有任何旋转运动或没有任何升高运动的基板支撑台，淋浴喷头和防沉积板构成，基板支撑台和 沉积抑制板被布置成在它们之间形成用作气体排出路径的同心间隙或间隙，惰性气体可以沿着沉积抑制板从气体排出路径的上部流动， 在排气路径的次级侧形成较低的空间。

公开(公告)号：US09343207B2

公开(公告)日：2016-05-17

申请号：US14369659

申请日：2013-08-27

申请人： Natsuki Fukuda ,  Kazunori Fukuju ,  Yutaka Nishioka ,  Koukou Suu

发明人： Natsuki Fukuda ,  Kazunori Fukuju ,  Yutaka Nishioka ,  Koukou Suu

IPC分类号： H01C7/10 ,  H01C7/108 ,  H01L45/00 ,  C23C14/00 ,  C23C14/08 ,  H01C17/06 ,  H01C17/12

CPC分类号： H01C7/108 ,  C23C14/0036 ,  C23C14/08 ,  H01C17/06 ,  H01C17/12 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

摘要： To provide a resistance change device that can be protected from an excess current without enlarging a device size. A resistance change device 1 according to the present embodiment includes a lower electrode layer 3, an upper electrode layer 6, a first metal oxide layer 51, a second metal oxide layer 52, and a current limiting layer 4. The first metal oxide layer 51 is disposed between the lower electrode layer 3 and the upper electrode layer 6, and has a first resistivity. The second metal oxide layer 52 is disposed between the first metal oxide layer 51 and the upper electrode layer 6, and has a second resistivity higher than the first resistivity. The current limiting layer 4 is disposed between the lower electrode layer 3 and the first metal oxide layer 51, and has a third resistivity higher than the first resistivity and lower than the second resistivity.

摘要翻译： 提供一种电阻变化器件，可以免受过电流的影响，而不会增大器件尺寸。 根据本实施例的电阻改变装置1包括下电极层3，上电极层6，第一金属氧化物层51，第二金属氧化物层52和限流层4.第一金属氧化物层51 设置在下电极层3和上电极层6之间，并且具有第一电阻率。 第二金属氧化物层52设置在第一金属氧化物层51和上电极层6之间，并且具有比第一电阻率高的第二电阻率。 限流层4设置在下电极层3和第一金属氧化物层51之间，并且具有比第一电阻率高的第三电阻率并且低于第二电阻率。

公开(公告)号：US20150056373A1

公开(公告)日：2015-02-26

申请号：US14348006

申请日：2013-07-25

申请人： Natsuki Fukuda ,  Kazunori Fukuju ,  Yutaka Nishioka ,  Koukou Suu

发明人： Natsuki Fukuda ,  Kazunori Fukuju ,  Yutaka Nishioka ,  Koukou Suu

IPC分类号： C23C14/00 ,  C23C16/44 ,  H01J37/34 ,  C23C16/455

CPC分类号： C23C14/0063 ,  C23C14/0068 ,  C23C14/083 ,  C23C16/4412 ,  C23C16/455 ,  H01J37/32449 ,  H01J37/34 ,  H01J37/3411 ,  H01J2237/006

摘要： [Object] To provide a deposition method and a deposition apparatus capable of forming a metal compound layer having desired film characteristics uniformly in a substrate surface.[Solving Means] A deposition method according to an embodiment of the present invention includes evacuating an inside of a vacuum chamber 10 having a deposition chamber 101 formed inside a cylindrical partition wall 20 and an exhaust chamber 102 formed outside the partition wall 20, via an exhaust line 50 connected to the exhaust chamber 102. A process gas containing a reactive gas is introduced into the exhaust chamber 102. With the deposition chamber 101 being maintained at a lower pressure than the exhaust chamber 102, the process gas is supplied to the deposition chamber 101 via a gas flow passage 80 between the partition wall 20 and the vacuum chamber 10.

摘要翻译： 本发明提供能够在基板表面上均匀地形成具有期望的膜特性的金属化合物层的沉积方法和沉积装置。 [解决方案]根据本发明的实施方式的沉积方法包括将具有形成在圆筒形分隔壁20内的沉积室101和形成在分隔壁20外部的排气室102的真空室10的内部经由 连接到排气室102的排气管路50.将包含反应性气体的处理气体引入排气室102.在沉积室101保持在比排气室102低的压力下，将处理气体供应到沉积物 室101经由分隔壁20和真空室10之间的气体流路80。