公开(公告)号：US09469899B2

公开(公告)日：2016-10-18

申请号：US14557874

申请日：2014-12-02

Applicant: ASM International N.V.

Inventor： Hannu Huotari ,  Marko Tuominen ,  Miika Leinikka

IPC: H01L21/20 ,  C23C16/455 ,  C23C16/34 ,  C23C16/32 ,  C23C16/38 ,  C23C16/40 ,  H01L21/28 ,  H01L29/66 ,  H01L29/51

CPC classification number: C23C16/45525 ,  C23C16/32 ,  C23C16/34 ,  C23C16/38 ,  C23C16/40 ,  H01L21/28079 ,  H01L29/517 ,  H01L29/66583

Abstract: Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.

公开(公告)号：US09379011B2

公开(公告)日：2016-06-28

申请号：US13592025

申请日：2012-08-22

Applicant: Viljami J. Pore ,  Suvi P. Haukka ,  Tom E. Blomberg ,  Eva E. Tois

Inventor： Viljami J. Pore ,  Suvi P. Haukka ,  Tom E. Blomberg ,  Eva E. Tois

IPC: H01L29/78 ,  H01L21/768 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L21/28518 ,  H01L21/28052 ,  H01L21/28568 ,  H01L21/321 ,  H01L21/32133 ,  H01L21/3215 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76886 ,  H01L29/456 ,  H01L29/665 ,  H01L29/78

Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes.

Abstract translation: 一方面，提供了硅化和锗化的方法。 在一些实施例中，用于形成金属硅化物的方法可包括在衬底的暴露的硅区上形成非氧化物界面，例如锗或固体锑。 在界面层上形成金属氧化物。 退火和还原使得来自金属氧化物的金属与下面的硅反应并形成金属硅化物。 另外，可以通过在锗上还原金属氧化物来形成金属锗化物，无论底层的硅是否也被硅化。 在其它实施例中，直接沉积镍，并且不使用界面层。 另一方面，提供了通过气相沉积工艺沉积镍薄膜的方法。 在一些实施例中，镍薄膜通过ALD沉积。 镍薄膜可以直接用于硅化和锗化工艺。

公开(公告)号：US09365926B2

公开(公告)日：2016-06-14

申请号：US14629333

申请日：2015-02-23

Applicant: ASM International N.V.

Inventor： Timo Hatanpaa ,  Jaakko Niinisto ,  Mikko Ritala ,  Markku Leskela ,  Suvi Haukka

IPC: C23C16/40 ,  C23C16/455 ,  C01G23/07 ,  C01G25/02 ,  C01G27/02

CPC classification number: C23C16/405 ,  C01G23/07 ,  C01G25/02 ,  C01G27/02 ,  C01P2006/40 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45553

Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

Abstract translation: 本文提供了通过原子层沉积形成过渡金属氧化物薄膜，优选IVB族金属氧化物薄膜的方法。 金属氧化物薄膜可以使用金属有机反应物在高温下沉积。 在一些实施方案中使用包含两种配体的金属有机反应物，其中至少一种是环庚三烯或环庚三烯（CHT）配体。 金属氧化物薄膜可以用作例如晶体管，闪光器件，电容器，集成电路和其它半导体应用中的电介质氧化物。

公开(公告)号：US09175390B2

公开(公告)日：2015-11-03

申请号：US12429133

申请日：2009-04-23

Applicant: Viljami Pore ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

Inventor： Viljami Pore ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/00 ,  C23C16/455 ,  C23C16/30 ,  H01L45/00 ,  H01L21/02

CPC classification number: C07F11/005 ,  C23C16/306 ,  C23C16/45553 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/0262 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1616 ,  Y02P20/582

Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

Abstract translation: 提供了用于形成诸如Sb-Te，Ge-Te，Ge-Sb-Te，Bi-Te和Zn-Te薄膜的Te含量薄膜的原子层沉积（ALD）工艺。 还提供了用于形成含Se的薄膜的ALD工艺，例如Sb-Se，Ge-Se，Ge-Sb-Se，Bi-Se和Zn-Se薄膜。 优选使用式（Te，Se）（SiR 1 R 2 R 3）2的Te和Se前体，其中R 1，R 2和R 3是烷基。 还提供了用于合成这些Te和Se前体的方法。 还提供了在相变存储器件中使用Te和Se薄膜的方法。

公开(公告)号：US09169557B2

公开(公告)日：2015-10-27

申请号：US12777022

申请日：2010-05-10

Applicant: Timo Hatanpaa ,  Marko Vehkamaki ,  Mikko Ritala ,  Markku Leskela

Inventor： Timo Hatanpaa ,  Marko Vehkamaki ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/40 ,  H01G4/10 ,  H01L21/314 ,  H01L21/316 ,  H01L49/02

CPC classification number: H01L21/02194 ,  C23C16/40 ,  C23C16/45525 ,  C23C16/45553 ,  H01G4/10 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/3141 ,  H01L21/31691 ,  H01L28/55

Abstract: Processes are provided for producing bismuth-containing oxide thin films by atomic layer deposition. In preferred embodiments an organic bismuth compound having at least one monodentate alkoxide ligand is used as a bismuth source material. Bismuth-containing oxide thin films can be used, for example, as ferroelectric or dielectric materials in integrated circuits and as superconductor materials.

Abstract translation: 提供了通过原子层沉积生产含铋氧化物薄膜的方法。 在优选的实施方案中，使用具有至少一个单齿醇盐配体的有机铋化合物作为铋源材料。 含铋氧化物薄膜可以用作例如集成电路中的铁电或电介质材料，也可用作超导材料。

公开(公告)号：US09112003B2

公开(公告)日：2015-08-18

申请号：US13708863

申请日：2012-12-07

Applicant: ASM International. N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/768 ,  H01L21/31 ,  H01L21/314 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/285 ,  C23C16/04 ,  C23C16/14

CPC classification number: H01L21/7685 ,  C23C16/04 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  H01L21/76889 ,  H01L23/53238

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.

Abstract translation: 金属层可以相对于基板的第二表面选择性沉积在衬底的一个表面上。 在一些实施例中，金属层选择性地沉积在铜上而不是绝缘或介电材料。 在一些实施方案中，第一前体在第一表面上形成一层，随后反应或转化以形成金属层。 可以选择沉积温度使得达到高于约50％或甚至约90％的选择性。

公开(公告)号：US08956971B2

公开(公告)日：2015-02-17

申请号：US13702992

申请日：2011-06-10

Applicant: Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/44 ,  H01L21/02 ,  C23C16/02 ,  C23C16/14 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/7685 ,  C23C16/0227 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/02068 ,  H01L21/02697 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76883

Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.

Abstract translation: 金属层可以相对于基板的第二表面选择性地沉积在基板的表面上。 在优选实施例中，金属层选择性地沉积在铜上，而不是绝缘或介电材料。 在优选的实施方案中，第一前体在第一表面上形成层或吸附的物质，随后反应或转化以形成金属层。 优选选择沉积温度使得达到高于约90％的选择性。

公开(公告)号：US20150017794A1

公开(公告)日：2015-01-15

申请号：US14184116

申请日：2014-02-19

Applicant: ASM International. N.V.

Inventor： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC: H01L21/225 ,  H01L21/22 ,  H01L21/324 ,  H01L21/02

CPC classification number: H01L21/02321 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/2225 ,  H01L21/2255 ,  H01L21/324 ,  H01L29/66803

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

公开(公告)号：US20140193579A1

公开(公告)日：2014-07-10

申请号：US14014435

申请日：2013-08-30

Applicant: Tom E. Blomberg

Inventor： Tom E. Blomberg

IPC: C23C16/44

CPC classification number: C23C16/44 ,  C23C16/45525 ,  C23C16/45544

Abstract: The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor fed is split in to two paths from a precursor source. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes.

Abstract translation: 本发明一般涉及在衬底上控制生长材料的方法和装置。 根据本发明的实施方案，将前体进料分离成来自前体源的两条路径。 其中一条路径以连续的方式受到限制。 另一条路径被定期地限制。 两个路径的输出在反应器进入之前的某一点收敛。 因此，单个前体源能够在两种不同的条件下将前体进料到反应器中，其可以被看作模拟ALD条件，也可以被看作模拟CVD条件。 这允许否则单模电抗器以包括一个或多个ALD / CVD组合模式的多种模式操作。

公开(公告)号：US08592294B2

公开(公告)日：2013-11-26

申请号：US12710185

申请日：2010-02-22

Applicant: Suvi Haukka ,  Hannu Huotari ,  Marko Tuominen

Inventor： Suvi Haukka ,  Hannu Huotari ,  Marko Tuominen

IPC: H01L21/20

CPC classification number: C23C16/45525 ,  C23C16/402 ,  C23C16/403 ,  C23C16/405 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0228 ,  H01L28/40

Abstract: Methods are provided herein for forming metal oxide thin films by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures such that the thin film is crystalline as deposited. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

Abstract translation: 本文提供了通过原子层沉积形成金属氧化物薄膜的方法。 金属氧化物薄膜可以在高温下沉积，使得薄膜是沉积的结晶的。 金属氧化物薄膜可以用作例如晶体管，闪光器件，电容器，集成电路和其它半导体应用中的电介质氧化物。