公开(公告)号：US20140196851A1

公开(公告)日：2014-07-17

申请号：US14173693

申请日：2014-02-05

Applicant: LuxVue Technology Corporation

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: B32B38/18

CPC classification number: B32B38/18 ,  B81C99/002 ,  H01L21/6835 ,  H01L23/5384 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2924/0002 ,  Y10T156/17 ,  H01L2924/00

Abstract: A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.

Abstract translation: 描述了一种兼容的单极微器件传输头阵列和从SOI衬底形成兼容单极微器件传输阵列的方法。 在一个实施例中，微器件转移头阵列包括基底衬底和在基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括在硅互连上方突出的台面结构，并且每个硅电极可偏转到基底基板和硅电极之间的空腔中。 介电层覆盖每个台面结构的顶面。

公开(公告)号：US20140158415A1

公开(公告)日：2014-06-12

申请号：US13710438

申请日：2012-12-10

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: H05K1/02

CPC classification number: B81C99/002 ,  H01L21/6835 ,  H01L2221/68354

Abstract: A monopolar and bipolar micro device transfer head array and method of forming a monopolar and bipolar micro device transfer array are described. In an embodiment, a micro device transfer head array includes a base substrate, a first insulating layer formed over the base substrate, and an array of mesa structures. A second insulating layer may be formed over the mesa structure, a patterned metal layer over the second insulating layer, and a dielectric layer covering the metal layer.

Abstract translation: 描述了单极和双极微器件转移头阵列和形成单极和双极微器件转移阵列的方法。 在一个实施例中，微器件转移头阵列包括基底基板，形成在基底基板上的第一绝缘层和台面结构阵列。 可以在台面结构之上形成第二绝缘层，在第二绝缘层上形成图案化金属层，以及覆盖金属层的电介质层。

公开(公告)号：US08569115B1

公开(公告)日：2013-10-29

申请号：US13543680

申请日：2012-07-06

Applicant: Dariusz Golda ,  Andreas Bibl

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: H01L21/82

CPC classification number: H01L21/6833 ,  B32B38/18 ,  B81C99/002 ,  H01L21/266 ,  H01L21/3083 ,  H01L21/76264 ,  H01L24/75 ,  H01L29/06 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66143 ,  H01L29/66348 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725 ,  H01L2224/7598 ,  H01L2924/1461 ,  H02N13/00 ,  Y10T156/17

Abstract: A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.

Abstract translation: 描述了一种兼容的双极微器件传输头阵列和从SOI衬底形成兼容的双极微器件传输阵列的方法。 在一个实施例中，柔性双极微器件转移头阵列包括基底衬底和在基底衬底上的图案化硅层。 图案化硅层可以包括第一和第二硅互连以及与第一和第二硅互连电连接并可偏转到基底基板和硅电极之间的一个或多个空腔中的第一和第二硅电极阵列。

公开(公告)号：US20130126827A1

公开(公告)日：2013-05-23

申请号：US13708695

申请日：2012-12-07

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： Andreas Bibl ,  John A. Higginson ,  Hung-Fai Stephen Law ,  Hsin-Hua Hu

IPC: H01L33/04

CPC classification number: H01L33/06 ,  F21V7/00 ,  H01L25/0753 ,  H01L27/15 ,  H01L29/0684 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/20 ,  H01L33/28 ,  H01L33/30 ,  H01L2224/95

Abstract: A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.

Abstract translation: 描述了微型发光二极管（LED）和形成用于传送到接收基板的微型LED阵列的方法。 微型LED结构可以包括微型p-n二极管和金属化层，金属化层位于微型p-n二极管和结合层之间。 保形介质阻挡层可以跨越微型p-n二极管的侧壁。 微型LED结构和微型LED阵列可以被拾取并转移到接收衬底。

公开(公告)号：US09288899B2

公开(公告)日：2016-03-15

申请号：US14681707

申请日：2015-04-08

Applicant: LuxVue Technology Corporation

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: H01L21/266 ,  H05K1/02 ,  H01L21/768 ,  H01L23/48 ,  H01L21/683 ,  H05K1/03 ,  H05K1/09 ,  H05K1/11

CPC classification number: H01L21/6833 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L2221/68368 ,  H01L2924/00 ,  H01L2924/0002 ,  H05K1/0284 ,  H05K1/03 ,  H05K1/09 ,  H05K1/115 ,  H05K2201/09036

Abstract: A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure.

Abstract translation: 描述了从SOI衬底形成微器件传输阵列的微器件转移头阵列和方法。 在一个实施例中，微器件传送头阵列包括基底衬底和基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括突出在硅互连上方的台面结构。 介电层覆盖每个台面结构的顶面。

公开(公告)号：US09217541B2

公开(公告)日：2015-12-22

申请号：US13894332

申请日：2013-05-14

Applicant: LuxVue Technology Corporation

Inventor： Stephen Bathurst ,  Hsin-Hua Hu ,  Andreas Bibl

IPC: H01L29/06 ,  F21K99/00 ,  H01L23/00 ,  H01L33/00

CPC classification number: F21K9/00 ,  B81C99/002 ,  H01L24/00 ,  H01L33/0095 ,  H01L2224/03002 ,  H01L2224/06181 ,  H01L2224/94 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10331 ,  H01L2924/10336 ,  H01L2924/10342 ,  H01L2924/10346 ,  H01L2924/10349 ,  H01L2924/10375 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1461 ,  Y10T29/49002 ,  H01L2224/03 ,  H01L2924/00

Abstract: A stabilization structure includes a stabilization layer on a carrier substrate. The stabilization layer includes an array of staging cavities. An array of micro devices are within the array of staging cavities. Each micro device is laterally attached to a shear release post laterally extending from a sidewall of a staging cavity. A pressure is applied to the array of micro devices from the array of transfer heads to shear the array of micro devices off the shear release posts. The sheared off micro devices are picked up from the carrier substrate using the array of transfer heads.

Abstract translation: 稳定结构包括载体基底上的稳定层。 稳定层包括分段腔阵列。 微器件阵列在分级腔阵列内。 每个微器件横向地附接到从分级腔的侧壁横向延伸的剪切释放柱。 从转移头阵列向微器件阵列施加压力以将微器件阵列剪切离开剪切释放柱。 使用转移头阵列从载体衬底拾取剪切的微器件。

公开(公告)号：US20150348504A1

公开(公告)日：2015-12-03

申请号：US14294494

申请日：2014-06-03

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： Kapil V. Sakariya ,  Mohammad Hendijanifard ,  Tore Nauta

IPC: G09G5/10 ,  G09G3/32

CPC classification number: G09G3/3233 ,  G09G3/2092 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2320/0626 ,  G09G2360/141 ,  G09G2360/142 ,  G09G2360/144 ,  G09G2360/145 ,  G09G2360/148

Abstract: Exemplary methods and systems use a micro light emitting diode (LED) in an active matrix display to emit and sense light. Display panels, systems, and methods of operation are described in which LEDs may be used for both emission and sensing.

Abstract translation: 示例性方法和系统使用有源矩阵显示器中的微发光二极管（LED）来发射和感测光。 描述了显示面板，系统和操作方法，其中LED可以用于发射和感测两者。

公开(公告)号：US09162880B2

公开(公告)日：2015-10-20

申请号：US13607031

申请日：2012-09-07

Applicant: John A. Higginson ,  Andreas Bibl ,  David Albertalli

Inventor： John A. Higginson ,  Andreas Bibl ,  David Albertalli

IPC: H01L21/683 ,  H01T23/00 ,  B81C99/00

CPC classification number: B25J15/0085 ,  B81C99/002 ,  H01L21/67132 ,  H01L21/67144 ,  H01L21/67259 ,  H01L24/75 ,  H01L24/95 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75753 ,  H01L2224/7598 ,  H02N13/00

Abstract: Systems and methods for transferring a micro device from a carrier substrate are disclosed. In an embodiment, a mass transfer tool includes an articulating transfer head assembly, a carrier substrate holder, and an actuator assembly to adjust a spatial relationship between the articulating transfer head assembly and the carrier substrate holder. The articulating transfer head assembly may include an electrostatic voltage source connection and a substrate supporting an array of electrostatic transfer heads.

Abstract translation: 公开了用于从载体衬底传送微器件的系统和方法。 在一个实施例中，传质工具包括铰接传送头组件，载体衬底保持器和致动器组件，以调节关节式传送头组件和载体衬底保持器之间的空间关系。 铰接传送头组件可以包括静电电压源连接和支撑静电转印头阵列的基片。

公开(公告)号：US09153171B2

公开(公告)日：2015-10-06

申请号：US13717634

申请日：2012-12-17

Applicant: LuxVue Technology Corporation

Inventor： Kapil V. Sakariya ,  Andreas Bibl ,  Kelly McGroddy

IPC: H01L25/13 ,  G09G3/32 ,  H01L25/075

CPC classification number: G09G3/3426 ,  G09G3/2088 ,  G09G3/32 ,  G09G3/3216 ,  G09G3/3233 ,  G09G3/3266 ,  G09G2300/0828 ,  G09G2300/0842 ,  G09G2300/0857 ,  G09G2310/08 ,  G09G2320/029 ,  G09G2330/028 ,  H01L25/0753 ,  H01L25/167 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting assembly is described. In one embodiment, one or more light emitting diode (LED) devices and one or more microcontrollers are bonded to a same side of a substrate, with the one or more microcontrollers to switch and drive the one or more LED devices.

Abstract translation: 描述发光组件。 在一个实施例中，一个或多个发光二极管（LED）器件和一个或多个微控制器被结合到衬底的同一侧，一个或多个微控制器用于切换和驱动一个或多个LED器件。

公开(公告)号：US09105492B2

公开(公告)日：2015-08-11

申请号：US13466966

申请日：2012-05-08

Applicant: Andreas Bibl ,  John A. Higginson ,  Hsin-Hua Hu

Inventor： Andreas Bibl ,  John A. Higginson ,  Hsin-Hua Hu

IPC: G01P15/125 ,  H01L25/075 ,  H01L21/67 ,  H01L33/00

CPC classification number: B41J2/385 ,  B25J15/0052 ,  B25J15/0085 ,  B41J2/39 ,  B81B2201/038 ,  B81C99/002 ,  H01L21/67144 ,  H01L21/6835 ,  H01L24/75 ,  H01L24/83 ,  H01L24/97 ,  H01L25/0753 ,  H01L33/0079 ,  H01L2221/68322 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2224/29036 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/7565 ,  H01L2224/7598 ,  H01L2224/83815 ,  H01L2224/83855 ,  H01L2224/97 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2924/00014

Abstract: A compliant micro device transfer head and head array are disclosed. In an embodiment a micro device transfer head includes a spring portion that is deflectable into a space between a base substrate and the spring portion.

Abstract translation: 公开了一种兼容的微器件传送头和头阵列。 在一个实施例中，微装置转移头包括可偏转到基底基板和弹簧部分之间的空间中的弹簧部分。