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    Ion source having secondary electron enhancing electrode
    11.
    发明授权
    Ion source having secondary electron enhancing electrode 有权
    具有二次电子增强电极的离子源

    公开(公告)号：US08253314B2

    公开(公告)日：2012-08-28

    申请号：US12959601

    申请日：2010-12-03

    Applicant: Peng Liu ,  Duan-Liang Zhou ,  Pi-Jin Chen ,  Zhao-Fu Hu ,  Cai-Lin Guo ,  Bing-Chu Du ,  Shou-Shan Fan

    Inventor： Peng Liu ,  Duan-Liang Zhou ,  Pi-Jin Chen ,  Zhao-Fu Hu ,  Cai-Lin Guo ,  Bing-Chu Du ,  Shou-Shan Fan

    IPC: H01J27/00 ,  H01J27/02

    CPC classification number: H01J31/127 ,  H01J1/3044 ,  H01J29/04 ,  H01J2201/30411 ,  H01J2329/0415

    Abstract: An ion source using a field emission device is provided. The field emission device includes an insulative substrate, an electron pulling electrode, a secondary electron emission layer, a first dielectric layer, a cathode electrode, and an electron emission layer. The electron pulling electrode is located on a surface of the insulative substrate. The secondary electron emission layer is located on a surface of the electron pulling electrode. The cathode electrode is located apart from the electron pulling electrode by the first dielectric layer. The cathode electrode has a surface oriented to the electron pulling electrode and defines a first opening as an electron output portion. The electron emission layer is located on the surface of the cathode electrode and oriented to the electron pulling electrode.

    Abstract translation: 提供了使用场发射装置的离子源。 场致发射器件包括绝缘衬底，电子牵拉电极，二次电子发射层，第一介电层，阴极电极和电子发射层。 电子牵引电极位于绝缘基板的表面上。 二次电子发射层位于电子牵拉电极的表面上。 阴极通过第一介电层与电子牵拉电极分开。 阴极电极具有取向于电子牵引电极的表面，并且限定作为电子输出部分的第一开口。 电子发射层位于阴极表面并且定向到电子牵引电极。

    High Pressure Field Emitter, Photoionization, Plasma Initiation and Field Devices
    13.
    发明申请
    High Pressure Field Emitter, Photoionization, Plasma Initiation and Field Devices 失效
    高压场发射器，光电离，等离子体起始和现场设备

    公开(公告)号：US20060227830A1

    公开(公告)日：2006-10-12

    申请号：US11383847

    申请日：2006-05-17

    Applicant: John Keady

    Inventor： John Keady

    IPC: H01S3/14

    CPC classification number: F03H1/0081 ,  F03H1/0012 ,  H01J27/26 ,  H01J2201/30411 ,  H01S5/105

    Abstract: At least one exemplary embodiment is directed to a propulsion device that ionizes a portion of a medium and E×B drifts the ionized portion providing thrust where the ionized portion is created using high pressure field emitters comprising: a substrate layer; a gate layer; a field emitter tip; and a cover layer, wherein the field emitter tip is configured to emit electrons in a region when there is a potential difference between the gate layer and the field emitter tip, where the cover layer separates an ambient environment at a pressure from the region, and where a substantial portion of the electrons pass through the cover layer.

    Abstract translation: 至少一个示例性实施例涉及一种电离介质的一部分的推进装置，并且ExB使用高压场发射器漂移产生离子化部分的离子化部分的离子化部分，其包括：基底层; 门层; 场发射器尖端; 以及覆盖层，其中所述场发射极尖端被配置为在所述栅极层和所述场致发射极尖端之间存在电位差的区域中发射电子，其中所述覆盖层在与所述区域的压力下分离周围环境，以及 其中大部分电子通过覆盖层。

    Method for manufacturing a cathode tip of electric field emission device
    14.
    发明授权
    Method for manufacturing a cathode tip of electric field emission device 有权
    电场发射装置的阴极尖端的制造方法

    公开(公告)号：US6069018A

    公开(公告)日：2000-05-30

    申请号：US141121

    申请日：1998-08-27

    Applicant: Yoon-Ho Song ,  Jin Ho Lee ,  Kyoung Ik Cho

    Inventor： Yoon-Ho Song ,  Jin Ho Lee ,  Kyoung Ik Cho

    IPC: H01J17/49 ,  H01L21/00

    CPC classification number: H01J9/025 ,  H01J2201/30411 ,  H01J2209/0226 ,  H01J2237/06341 ,  H01J2329/0415

    Abstract: A method for manufacturing a cathode tip of electric field emission device includes depositing conductive layer and undoped silicon layer on the insulator substrate sequentially; forming a tip-mask pattern on the selected area of top of said undoped silicon film and etching said undoped silicon film isotropically and then anisotropically in turn, so that the silicon film is formed as cone-like having cylinder; and removing the tip-mask pattern, implanting ion into the etched silicon layer and removing the ion implanted silicon layer using the wet etch process.

    Abstract translation: 制造电场发射器件的阴极尖端的方法包括依次在绝缘体衬底上沉积导电层和未掺杂的硅层; 在所述未掺杂的硅膜的顶部的选定区域上形成尖端掩模图案，并且各向同性地各向异性地蚀刻所述未掺杂的硅膜，从而使得硅膜形成为具有圆筒的锥形; 并且去除尖端掩模图案，将离子注入到蚀刻的硅层中并且使用湿蚀刻工艺去除离子注入的硅层。

    Electron Source
    16.
    发明申请
    Electron Source 审中-公开

    公开(公告)号：US20190049851A1

    公开(公告)日：2019-02-14

    申请号：US16161010

    申请日：2018-10-15

    Applicant: KLA-Tencor Corporation

    Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  Xuefeng Liu ,  John Fielden

    IPC: G03F7/20 ,  H01J37/073 ,  H01J1/34 ,  H01J1/304 ,  H01J35/06

    CPC classification number: G03F7/70008 ,  H01J1/304 ,  H01J1/34 ,  H01J35/065 ,  H01J37/073 ,  H01J2201/30411 ,  H01J2201/3048 ,  H01J2237/0635

    Abstract: An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped.

    Electron Source
    19.
    发明申请
    Electron Source 审中-公开
    电子源

    公开(公告)号：US20170047207A1

    公开(公告)日：2017-02-16

    申请号：US15234638

    申请日：2016-08-11

    Applicant: KLA-Tencor Corporation

    Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  Xuefeng Liu ,  John Fielden

    IPC: H01J40/06 ,  G03F7/20 ,  H01J37/29 ,  H01J37/285 ,  H01J1/34 ,  H01J35/14

    CPC classification number: G03F7/70008 ,  H01J1/304 ,  H01J1/34 ,  H01J35/065 ,  H01J37/073 ,  H01J2201/30411 ,  H01J2201/3048 ,  H01J2237/0635

    Abstract: An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped.

    Abstract translation: 在具有相对的第一和第二表面的硅衬底上形成电子源。 在硅衬底的第二表面上制备至少一个场致发射体以增强电子的发射。 为了防止硅的氧化，使用最小化氧化和缺陷的工艺将薄的连续的硼层直接设置在场致发射体的输出表面上。 场发射器可以采取各种形状，例如金字塔和圆形晶须。 一个或几个可选的栅极层可以放置在或稍低于场发射极尖端的高度，以便实现对发射电流和高发射电流的快速和准确的控制。 场发射极可以是p型掺杂的并且被配置为以反偏压模式操作，或者场发射极可以是n型掺杂的。

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