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    Focused ion beam system and method of making focal adjustment of ion beam
    12.
    发明授权
    Focused ion beam system and method of making focal adjustment of ion beam 有权

    公开(公告)号：US09646805B2

    公开(公告)日：2017-05-09

    申请号：US14533494

    申请日：2014-11-05

    Applicant: JEOL Ltd.

    Inventor： Tomohiro Mihira

    IPC: H01J37/28 ,  H01J37/153 ,  H01J37/304 ,  H01J37/21 ,  H01J37/30

    CPC classification number: H01J37/304 ,  H01J37/21 ,  H01J37/28 ,  H01J37/3005 ,  H01J2237/0492 ,  H01J2237/08 ,  H01J2237/10 ,  H01J2237/21 ,  H01J2237/216 ,  H01J2237/2448 ,  H01J2237/30472 ,  H01J2237/31749

    Abstract: A focused ion beam system is offered which can make a focal adjustment without relying on the structure of a sample while suppressing damage to the sample to a minimum. Also, a method of making this focal adjustment is offered. The focused ion beam system has an ion source for producing an ion beam, a lens system for focusing the beam onto the sample, a detector for detecting secondary electrons emanating from the sample, and a controller for controlling the lens system. The controller is operative to provide control such that the sample is irradiated with the ion beam without scanning the beam and that a focus of the ion beam is varied by varying the intensity of the objective lens during the ion beam irradiation. Also, the controller measures the intensity of a signal indicating secondary electrons emanating from the sample while the intensity of the objective lens is being varied. Furthermore, the controller makes a focal adjustment of the ion beam on the basis of the intensity of the objective lens obtained when the measured intensity of the signal indicating secondary electrons is minimal.

    CARBON MATERIALS FOR CARBON IMPLANTATION
    14.
    发明申请
    CARBON MATERIALS FOR CARBON IMPLANTATION 审中-公开
    用于碳化物的碳材料

    公开(公告)号：US20170069499A1

    公开(公告)日：2017-03-09

    申请号：US15354076

    申请日：2016-11-17

    Applicant: Entegris, Inc.

    Inventor： Joseph D. Sweeney ,  Oleg Byl ,  Robert Kaim

    IPC: H01L21/265 ,  C23C14/48 ,  C23C14/06 ,  H01J37/317

    CPC classification number: H01L21/265 ,  C23C14/06 ,  C23C14/0605 ,  C23C14/48 ,  H01J37/3171 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/2236

    Abstract: A method of implanting carbon ions into a target substrate, including: ionizing a carbon containing dopant material to produce a plasma having ions; optionally co-flowing an additional gas or series of gases with the carbon-containing dopant material; and implanting the ions into the target substrate. The carbon-containing dopant material is of the formula CwFxOyHz wherein if w=1, then x>0 and y and z can take any value, and wherein if w>1 then x or y is >0, and z can take any value. Such method significantly improves the efficiency of an ion implanter tool, in relation to the use of carbon source gases such as carbon monoxide or carbon dioxide.

    Abstract translation: 一种将碳离子注入目标衬底的方法，包括：使含碳的掺杂剂材料电离以产生具有离子的等离子体; 任选地将另外的气体或一系列气体与含碳掺杂剂材料共流动; 并将离子注入目标衬底。 含碳掺杂剂材料为CwFxOyHz，其中如果w = 1，则x> 0，y和z可以取任何值，并且其中如果w> 1，则x或y> 0，并且z可以取任何值 。 相对于碳源气体如一氧化碳或二氧化碳的使用，这种方法显着地提高了离子注入机工具的效率。

    METHOD AND DEVICE FOR THE SURFACE TREATMENT OF SUBSTRATES
    15.
    发明申请
    METHOD AND DEVICE FOR THE SURFACE TREATMENT OF SUBSTRATES 有权
    用于表面处理基材的方法和装置

    公开(公告)号：US20170069483A1

    公开(公告)日：2017-03-09

    申请号：US15122943

    申请日：2014-04-01

    Applicant: EV GROUP E. THALLNER GMBH

    Inventor： Nasser RAZEK

    IPC: H01L21/02 ,  H01L21/67 ,  C23C16/50 ,  C23C14/02 ,  H01J37/32

    CPC classification number: H01L21/02046 ,  C23C14/022 ,  C23C16/50 ,  H01J37/32009 ,  H01J2237/08 ,  H01J2237/3137 ,  H01J2237/3151 ,  H01L21/67028

    Abstract: A method for the surface treatment of a substrate surface of a substrate with the following steps: arrangement of the substrate surface in a process chamber, bombardment of the substrate surface with an ion beam, generated by an ion beam source and aimed at the substrate surface, to remove impurities from the substrate surface, whereby the ion beam has a first component, introduction of a second component into the process chamber to bind the removed impurities. A device for the surface treatment of a substrate surface of a substrate with: a process chamber for receiving the substrate, an ion beam source for generating an ion beam that has a first component and is aimed at the substrate surface to remove impurities from the substrate surface, means to introduce a second component into the process chamber to bind the removed impurities.

    Abstract translation: 一种用于基板表面处理的方法，包括以下步骤：在处理室中布置基板表面，用离子束轰击衬底表面，由离子束源产生并瞄准基板表面 从衬底表面去除杂质，由此离子束具有第一组分，将第二组分引入处理室以结合去除的杂质。 一种用于对衬底的衬底表面进行表面处理的装置，其具有：用于接收衬底的处理室，用于产生离子束的离子束源，所述离子束具有第一组分并且靶向衬底表面以从衬底去除杂质 表面，是将第二组分引入处理室以结合去除的杂质的手段。

    ION BEAM UNIFORMITY CONTROL USING ION BEAM BLOCKERS
    18.
    发明申请
    ION BEAM UNIFORMITY CONTROL USING ION BEAM BLOCKERS 有权
    离子束均匀控制使用离子束屏障

    公开(公告)号：US20150270099A1

    公开(公告)日：2015-09-24

    申请号：US14221840

    申请日：2014-03-21

    Applicant: Varian Semiconductor Equipment Associates, Inc.

    Inventor： Joseph C. Olson

    IPC: H01J37/30 ,  H01J37/317

    CPC classification number: H01J37/3007 ,  H01J37/3171 ,  H01J2237/04 ,  H01J2237/08 ,  H01J2237/303 ,  H01J2237/30455 ,  H01J2237/30488 ,  H01J2237/31703

    Abstract: A method of achieving ion beam uniformity control using ion beam blockers. The method includes generating an ion beam, detecting a current profile of said ion beam with an ion beam blocker unit, wherein said detected current profile is an initial current profile, blocking a portion of said ion beam with said ion beam blocker unit to achieve a second current profile that is different from the initial current profile, and implanting said ion beam into a workpiece after said blocking.

    Abstract translation: 使用离子束阻挡剂实现离子束均匀性控制的方法。 该方法包括产生离子束，用离子束阻挡单元检测所述离子束的电流分布，其中所述检测的电流分布是初始电流分布，用所述离子束阻挡单元阻挡所述离子束的一部分以实现 与初始电流分布不同的第二电流分布，以及在所述阻塞之后将所述离子束植入工件中。

    INSULATION STRUCTURE AND INSULATION METHOD
    19.
    发明申请
    INSULATION STRUCTURE AND INSULATION METHOD 有权
    绝缘结构和绝缘方法

    公开(公告)号：US20140353518A1

    公开(公告)日：2014-12-04

    申请号：US14291766

    申请日：2014-05-30

    Applicant: SEN CORPORATION

    Inventor： Masateru Sato

    IPC: H01J27/02

    CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J37/3171 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/032 ,  H01J2237/036 ,  H01J2237/038 ,  H01J2237/08 ,  H01J2237/31701

    Abstract: An insulation structure provided among a plurality of electrodes for extraction of an ion beam from a plasma generating section is provided. The insulation structure includes an insulation member including a first part connected to a first electrode and a second part connected to a second electrode and configured to support the first electrode to the second electrode, a first cover surrounding at least a part of the first part to protect the first part from contamination particles, and a second cover surrounding at least a part of the second part to protect the second part from contamination particles. At least one of the first part and the second part is made of a machinable ceramic or a porous ceramic.

    Abstract translation: 提供了用于从等离子体产生部分提取离子束的多个电极之间设置的绝缘结构。 绝缘结构包括绝缘构件，该绝缘构件包括连接到第一电极的第一部分和连接到第二电极的第二部分，并被配置为将第一电极支撑到第二电极，第一盖围绕第一部分的至少一部分， 保护第一部分免受污染颗粒，以及围绕第二部分的至少一部分的第二盖，以保护第二部分免受污染颗粒。 第一部分和第二部分中的至少一个由可机加工的陶瓷或多孔陶瓷制成。

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