Abstract:
A printed wiring board includes a main body having a mounting portion and ground and power supply pads in the mounting portion such that a ground line of a semiconductor device is connected to a ground pad and a power supply line of the device is connected to a power supply pad, and a layered capacitor disposed in the main body and having a high dielectric constant layer and first and second layer electrodes sandwiching the dielectric layer. One of the electrodes is connected to the power supply line and the other electrode is connected to the ground line, the first electrode has a solid pattern including passage holes through which second rod terminals connected to the second electrode pass in a non-contacting manner, and the second electrode has a solid pattern including passage holes through which first rod terminals connected to the first electrode pass in a non-contacting manner.
Abstract:
A printed wiring board includes a mounting portion on which a dual core processor including two processor cores in a single chip can be mounted, power supply lines, ground lines, and a first layered capacitor and a second layered capacitor that are independently provided for each of the processor cores, respectively. Accordingly, even when the electric potentials of the processor cores instantaneously drop, an instantaneous drop of the electric potential can be suppressed by action of the layered capacitors corresponding to the processor cores, respectively. In addition, even when the voltage of one of the processor cores varies, the variation in the voltage does not affect the other processor core, and thus malfunctioning does not occur.
Abstract:
A multilayer printed wiring board 10 includes: a mounting portion 60 on the top surface of which is mounted a semiconductor element that is electrically connected to a wiring pattern 32, etc.; and a capacitor portion 40 having a high dielectric constant layer 43, formed of ceramic and first and second layer electrodes 41 and 42 that sandwich the high dielectric constant layer 43. One of either of the first and second layer electrodes 41 and 42 is connected to a power supply line of the semiconductor element and the other of either of the first and second layer electrodes 41 and 42 is connected to a ground line. In this multilayer printed wiring board 10, high dielectric constant layer 43 included in the layered capacitor portion 40, which is connected between the power supply line and the ground line, is formed of ceramic. With this structure, the static capacitance of the layered capacitor portion 40 can be high, and an adequate decoupling effect is exhibited even under circumstances in which instantaneous potential drops occur readily.
Abstract:
A method for forming an embedded passive device module comprises depositing a first amount of an alkali silicate material, co-depositing an amount of embedded passive device material with the amount of alkali silicate material; and thermally processing the amount of alkali silicate material and the amount of embedded passive device material at a temperature sufficient to cure the amount of alkali silicate material and the amount of embedded passive device material and form a substantially moisture free substrate.
Abstract:
A semiconductor chip package and a printed circuit board having an embedded semiconductor chip package are disclosed. The semiconductor chip package may include a semiconductor chip that has at least one chip pad formed on one side, and a capacitor formed on the other side of the semiconductor chip.
Abstract:
A multilayer printed wiring board including an insulation layer and a first interlayer resin insulation layer provided on the insulation layer. A layered capacitor section is provided on the first interlayer resin insulation layer and has a high dielectric layer and first and second layered electrodes that sandwich the high dielectric layer. Also included is a second interlayer resin insulation layer provided on the first interlayer resin insulation layer and the layered capacitor section, and a metal thin-film layer provided over the layered capacitor section and on the second interlayer resin insulation layer. An outermost interlayer resin insulation layer is provided on the second interlayer resin insulation layer and the metal thin-film layer, and a mounting section is provided on the outermost interlayer resin insulation layer and has first and second external terminals to mount a semiconductor element. Multiple via conductors penetrate each interlayer resin insulation layer. The via conductors include first via conductors that electrically connect the first layered electrode to the first external terminals, and second via conductors that electrically connect the second layered electrode to the second external terminals.
Abstract:
An article includes a top electrode that is embedded in a solder mask. An article includes a top electrode that is on a core structure. A process of forming the top electrode includes reducing the solder mask thickness and forming the top electrode on the reduced-thickness solder mask. A process of forming the top electrode includes forming the top electrode over a high-K dielectric that is in a patterned portion of the core structure.
Abstract:
A capacitor built-in substrate of the present invention includes; a base resin layer; a plurality of capacitors arranged side by side in a lateral direction in a state that the capacitors are passed through the base resin layer, each of the capacitors constructed by a first electrode provided to pass through the base resin layer and having projection portions projected from both surface sides of the base resin layer respectively such that the projection portion on one surface side of the base resin layer serves as a connection portion, a dielectric layer for covering the projection portion of the first electrode on other surface side of the base resin layer, and a second electrode for covering the dielectric layer; a through electrode provided to pass through the base resin layer and having projection portions projected from both surface sides of the base resin layer respectively; and a built-up wiring formed on the other surface side of the base resin layer and connected to the second electrodes of the capacitors and one end side of the through electrode.
Abstract:
An objective is to provide a component-incorporated wiring substrate capable of solving a problem caused by an increase in length of wiring lines that connect a component and a capacitor. A component-incorporated wiring substrate 10 includes a core substrate 11, a first capacitor 301, a wiring laminate portion 31, and a second capacitor 101. An accommodation hole portion 90 of the core substrate 11 accommodates the first capacitor 101 therein, and a component-mounting region 20 is set on a surface 39 of the wiring laminate portion 31. The second capacitor 101 has electrode layers 102, 103 and a dielectric layer 104. The second capacitor 101 is embedded in the wiring laminate portion 31 in such a state that first main surfaces 105, 107 and second main surfaces 106, 108 are in parallel with the surface 39 of the wiring laminate portion 31, and is disposed between the first capacitor 301 and the component-mounting region 20.
Abstract:
Provided are semiconductor packages comprising at least one thin-film capacitor attached to a printed wiring board core through build-up layers, wherein a first electrode of the thin-film capacitor comprises a thin nickel foil, a second electrode of the thin-film capacitor comprises a copper electrode, and a copper layer is formed on the nickel foil. The interconnections between the thin-film capacitor and the semiconductor device provide a low inductance path to transfer charge to and from the semiconductor device. Also provided are methods for fabricating such semiconductor packages.