公开(公告)号：US09534147B2

公开(公告)日：2017-01-03

申请号：US14515723

申请日：2014-10-16

Applicant: Cabot Microelectronics Corporation

Inventor： Hon Wu Lau ,  Selvaraj Palanisamy Chinnathambi ,  Ke Zhang

IPC: C09G1/02 ,  B24B37/04 ,  H01L21/306 ,  G11B5/84

CPC classification number: C09G1/02 ,  B24B37/044 ,  G11B5/8404 ,  H01L21/30625

Abstract: The invention provides a polishing composition that contains (a) α-alumina particles that have an average particle size of about 250 nm to about 300 nm, (b) a per-type oxidizing agent, (c) a complexing agent, wherein the complexing agent is an amino acid or an organic acid, and (d) water. The invention also provides a method of polishing a substrate, especially a nickel-phosphorous substrate, with the polishing composition.

Abstract translation: 本发明提供了一种抛光组合物，其含有（a）平均粒度为约250nm至约300nm的α-氧化铝颗粒，（b）每种型氧化剂，（c）络合剂，其中络合 药剂是氨基酸或有机酸，和（d）水。 本发明还提供了用抛光组合物抛光基底，特别是镍 - 磷基底的方法。

公开(公告)号：US09505952B2

公开(公告)日：2016-11-29

申请号：US14639564

申请日：2015-03-05

Applicant: Cabot Microelectronics Corporation

Inventor： Brian Reiss ,  Dana Sauter Van Ness ,  Viet Lam ,  Alexander Hains ,  Steven Kraft ,  Renhe Jia

IPC: C09G1/04 ,  H01L21/302 ,  B24B37/04 ,  H01L21/321 ,  H01L21/306 ,  B24B1/00 ,  C09K3/14 ,  C09K13/06 ,  C09G1/06 ,  C09G1/02 ,  C09G1/00

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  B24B37/20 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.

Abstract translation: 本发明提供了一种化学机械抛光组合物，其包括第一磨料颗粒，其中第一磨料颗粒是湿法二氧化铈颗粒，其中值粒径为约40nm至约100nm，以抛光组合物的浓度存在于抛光组合物中 约0.005重量％ ％至约2wt。 ％，并且具有至少约300nm的粒度分布，官能化杂环，pH调节剂和水性载体，并且其中抛光组合物的pH为约1至约6.本发明还提供了一种 将抛光组合物抛光衬底，特别是包含氧化硅层的衬底的方法。

公开(公告)号：US09481811B2

公开(公告)日：2016-11-01

申请号：US14627081

申请日：2015-02-20

Applicant: Cabot Microelectronics Corporation

Inventor： Tong Li ,  Hon-Wu Lau ,  Michael White

IPC: C09G1/04 ,  B24B1/00 ,  C09G1/02 ,  B24B37/04 ,  H01L21/321 ,  H01L21/306 ,  C09K3/14 ,  C09K13/06 ,  C09G1/00 ,  C09G1/06

CPC classification number: C09G1/04 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02 ,  C09G1/06 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  G11B5/8404 ,  G11B23/505 ,  H01L21/30625 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition containing (a) an abrasive selected from wet-process silica, alpha alumina, fumed alumina, ceria, zirconia, titania, and combinations thereof, (b) an oxidation catalyst, (c) a non-transition metal sulfate salt, (d) a complexing agent, (e) hydrogen peroxide, (f) a nonionic surfactant, (g) an anionic surfactant, and (h) water. The polishing composition has a pH of about 1 to about 5, and the polishing composition is substantially free of a peroxydisulfate salt. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

Abstract translation: 本发明提供一种化学机械抛光组合物，其包含（a）选自湿法二氧化硅，α氧化铝，热解氧化铝，二氧化铈，氧化锆，二氧化钛及其组合的研磨剂，（b）氧化催化剂，（c） 过渡金属硫酸盐，（d）络合剂，（e）过氧化氢，（f）非离子表面活性剂，（g）阴离子表面活性剂和（h）水。 抛光组合物的pH为约1至约5，并且抛光组合物基本上不含过氧化二硫酸盐。 本发明还提供了一种通过使基底与抛光垫和化学机械抛光组合物接触来对基底，特别是镍 - 磷基底进行化学机械抛光的方法，相对于基底移动抛光垫和抛光组合物， 并研磨基底的至少一部分以抛光基底。

公开(公告)号：US09434859B2

公开(公告)日：2016-09-06

申请号：US14035037

申请日：2013-09-24

Applicant: Cabot Microelectronics Corporation

Inventor： Sudeep Pallikkara Kuttiatoor ,  Renhe Jia ,  Jeffrey Dysard

IPC: C09G1/02 ,  B24B1/00

CPC classification number: C09G1/02 ,  C09D5/00

Abstract: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles that comprise ceria, zirconia, silica, alumina, or a combination thereof, (b) a metal ion that is a Lewis Acid, (c) a ligand that is an aromatic carboxylic acid, an aromatic sulfonic acid, an aromatic acid amide, an amino acid, or a hydroxy-substituted N-heterocycle, and (d) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 4.

Abstract translation: 本发明提供化学机械抛光组合物和用化学机械抛光组合物对基材进行化学机械研磨的方法。 抛光组合物包含（a）包含二氧化铈，氧化锆，二氧化硅，氧化铝或其组合的磨料颗粒，（b）作为路易斯酸的金属离子，（c）作为芳族羧酸的配体，芳族 磺酸，芳香酸酰胺，氨基酸或羟基取代的N-杂环，和（d）水性载体，其中化学机械抛光组合物的pH在约1至约4的范围内。

公开(公告)号：US09409276B2

公开(公告)日：2016-08-09

申请号：US14515560

申请日：2014-10-16

Applicant: Cabot Microelectronics Corporation

Inventor： Ching-Ming Tsai ,  Shi-Wei Cheng ,  Jia-Cheng Hsu ,  Kun-Shu Yang ,  Hui-Feng Chen ,  Gregory Gaudet ,  Sheng-Huan Liu

IPC: B24B37/26

CPC classification number: B24B37/26

Abstract: The invention provides a polishing pad and a method of using the polishing pad for chemically-mechanically polishing a substrate. The polishing pad comprises at least a grooved region and an exclusion region, wherein the exclusion region is adjacent to the circumference of the polishing pad, and wherein the exclusion region is devoid of grooves.

Abstract translation: 本发明提供一种抛光垫和使用抛光垫对基材进行化学机械研磨的方法。 抛光垫至少包括一个沟槽区域和一个排除区域，其中排除区域与抛光垫的圆周相邻，并且其中排除区域没有凹槽。

公开(公告)号：US20160222254A1

公开(公告)日：2016-08-04

申请号：US14612736

申请日：2015-02-03

Applicant: Cabot Microelectronics Corporation

Inventor： Hung-Tsung HUANG ,  Ming-Chih YEH ,  Chih-Pin TSAI

IPC: C09G1/04 ,  H01L21/3105

CPC classification number: C09G1/04 ,  C09D1/02 ,  C09G1/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) colloidal silica particles that are surface modified with metal ions selected from Mg, Ca, Al, B, Be, and combinations thereof, and wherein the colloidal silica particles have a surface hydroxyl group density of from about 1.5 hydroxyls per nm2 to about 8 hydroxyls per nm2 of a surface area of the particles, (b) an anionic surfactant, (c) a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 7, and wherein the polishing composition is substantially free of an oxidizing agent that oxidizes a metal. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon nitride, silicon oxide, and/or polysilicon.

Abstract translation: 本发明提供了一种化学机械抛光组合物，其包括：（a）用选自Mg，Ca，Al，B，Be及其组合的金属离子进行表面改性的胶体二氧化硅颗粒，其中胶体二氧化硅颗粒具有表面羟基 （b）阴离子表面活性剂，（c）缓冲剂和（d）水，其中抛光组合物具有pH值 约2至约7，并且其中所述抛光组合物基本上不含氧化金属的氧化剂。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氮化硅，氧化硅和/或多晶硅。

公开(公告)号：US20160168421A1

公开(公告)日：2016-06-16

申请号：US14568311

申请日：2014-12-12

Applicant: Cabot Microelectronics Corporation

Inventor： Sudeep PALLIKKARA KUTTIATOOR ,  Kevin DOCKERY ,  Prativa PANDEY ,  Renhe JIA

IPC: C09G1/02

CPC classification number: C09G1/02 ,  C03C15/00 ,  C23F1/16 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/76224

Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, a polyhydroxy aromatic compound, a polyvinyl alcohol, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

Abstract translation: 本发明提供了含有二氧化铈磨料，式I的离子聚合物的化学机械抛光组合物：其中X1和X2，Z1和Z2，R1，R2，R3和R4以及n如本文所定义，多羟基芳族化合物 ，聚乙烯醇和水，其中所述抛光组合物的pH为约1至约4.5。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。

公开(公告)号：US20160108285A1

公开(公告)日：2016-04-21

申请号：US14919490

申请日：2015-10-21

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Kraft ,  Andrew Wolff ,  Phillip W. Carter

IPC: C09G1/02 ,  H01L21/321 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt corrosion inhibitor, (c) a cobalt dishing control agent, wherein the cobalt dishing control agent comprises an anionic head group and a C13-C20 aliphatic tail group, (d) an oxidizing agent that oxidizes cobalt, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

Abstract translation: 本发明提供了一种化学机械抛光组合物，其包含（a）磨料颗粒，（b）钴腐蚀抑制剂，（c）钴皂化控制剂，其中所述钴染色控制剂包含阴离子头基和C 13 -C 20脂族 尾组，（d）氧化钴的氧化剂和（e）水，其中抛光组合物的pH为约3至约8.5。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，底物含有钴。

公开(公告)号：US09303187B2

公开(公告)日：2016-04-05

申请号：US13947449

申请日：2013-07-22

Applicant: Cabot Microelectronics Corporation

Inventor： Dimitry Dinega ,  Kevin Moeggenborg ,  William Ward ,  Daniel Mateja

IPC: H01L21/304 ,  C09G1/02 ,  H01L21/306 ,  C09G1/00 ,  C09G1/04 ,  C09K13/06 ,  C09K3/14 ,  B24B1/00 ,  H01L21/3105 ,  H01L21/321

CPC classification number: C09G1/02 ,  B24B1/00 ,  C09G1/00 ,  C09G1/04 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.

Abstract translation: 本发明提供了一种用于抛光包含二氧化硅，氮化硅和多晶硅的衬底的化学机械抛光方法。 该方法包括用CMP组合物研磨衬底的表面以从其中去除至少一些二氧化硅，氮化硅和多晶硅。 该CMP组合物包含悬浮在pH约为3至9.5并含有阳离子聚合物的水性载体中的颗粒状二氧化铈磨料; 其中阳离子聚合物由季甲基丙烯酰氧基烷基铵聚合物组成。

公开(公告)号：US20150376460A1

公开(公告)日：2015-12-31

申请号：US14750050

申请日：2015-06-25

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Ernest Shen ,  Mary Cavanaugh ,  Daniel Clingerman

IPC: C09G1/02

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1436 ,  C09K3/1454 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: Methods for fabricating a chemical-mechanical polishing composition include growing colloidal silica abrasive particles in a liquid including an aminosilane compound such that the aminosilane compound becomes incorporated in the abrasive particles. A dispersion including such colloidal silica abrasive particles may be further processed to obtain a chemical-mechanical polishing composition including colloidal silica particles having the aminosilane compound incorporated therein.

Abstract translation: 用于制造化学机械抛光组合物的方法包括在包括氨基硅烷化合物的液体中生长胶体二氧化硅磨料颗粒，使得氨基硅烷化合物掺入磨料颗粒中。 可以进一步处理包括这种胶体二氧化硅磨料颗粒的分散体，以获得包含其中并入氨基硅烷化合物的胶体二氧化硅颗粒的化学机械抛光组合物。