公开(公告)号：US06350664B1

公开(公告)日：2002-02-26

申请号：US09645408

申请日：2000-08-25

申请人： Hiroshi Haji ,  Shoji Sakemi

发明人： Hiroshi Haji ,  Shoji Sakemi

IPC分类号： H01L2146

CPC分类号： H01L21/568 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3114 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68327 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/19043 ,  H01L2924/351 ,  H01L2224/13099 ,  H01L2924/00

摘要： The method of manufacturing a semiconductor device of the present invention includes steps of; a resin layer forming process in which a face with electrodes of a semiconductor wafer having a plurality of semiconductor elements formed thereon is coated with a resin layer which has a function of sealing it; and a wafer thinning process in which the back face of the semiconductor wafer is ground. The method of manufacturing the semiconductor device of the present invention further includes a process of forming a conductive section on the electrodes of the semiconductor wafer with a plurality of semiconductor elements in such a manner the conductive section reaches to the electrodes. The manufacturing method of the semiconductor device of the present invention still further includes a process of cutting the semiconductor wafer having a plurality of semiconductor elements along boundaries of each semiconductor element. In the thinning process, at least one of a mechanical grinding method, a chemical etching method and a plasma etching method are employed.

摘要翻译： 本发明的半导体器件的制造方法包括以下步骤： 树脂层形成工序，其中，具有形成有多个半导体元件的半导体晶片的电极的面被涂覆有具有密封功能的树脂层; 以及研磨半导体晶片的背面的晶片变薄处理。 本发明的半导体装置的制造方法还包括在导电部到达电极的状态下，在具有多个半导体元件的半导体晶片的电极上形成导电部的工序。 本发明的半导体器件的制造方法还包括沿着每个半导体元件的边界切割具有多个半导体元件的半导体晶片的工艺。 在薄化处理中，采用机械研磨法，化学蚀刻法和等离子体蚀刻法中的至少一种。

公开(公告)号：US06331347B2

公开(公告)日：2001-12-18

申请号：US09052979

申请日：1998-04-01

申请人： Hiroshi Haji

发明人： Hiroshi Haji

IPC分类号： B32B300

CPC分类号： H01L24/85 ,  H01L21/4846 ,  H01L23/49866 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/04042 ,  H01L2224/05644 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48644 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/85009 ,  H01L2224/8501 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0665 ,  H01L2924/15787 ,  H01L2924/181 ,  H05K3/244 ,  Y10S428/901 ,  Y10T428/12861 ,  Y10T428/12868 ,  Y10T428/12889 ,  Y10T428/1291 ,  Y10T428/24917 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012

摘要： A circuit pattern 2a, made of copper foil, is arranged on a substrate 1. A nickel-containing barrier metal layer 2b is formed on the circuit pattern 2a. A gold layer 2c is formed on the barrier metal layer 2b by electroless substitution plating. Then, substrate 1 is heated up to impel nickel contained in the gold layer 2c to move toward a surface zone of the gold layer 2c to deposit nickel compound in the surface zone of the gold layer 2c, thereby enhancing the fineness of a remaining part of the gold layer 2c at at least an inside zone immediately below the surface zone. Then, the surface zone containing the crowded nickel compound is removed off the gold layer 2c so as to expose a purified surface of the inside zone of the gold layer 2c. Therefore, it becomes possible to form an excellent electrode having satisfactory bondability to the wire by using a less amount of gold at low costs.

摘要翻译： 在基板1上配置由铜箔构成的电路图案2a，在电路图案2a上形成含镍阻挡金属层2b。 通过无电镀替代电镀在阻挡金属层2b上形成金层2c。 然后，将基板1加热以推动包含在金层2c中的镍朝向金层2c的表面区移动，以在金层2c的表面区域中沉积镍化合物，从而提高剩余部分的细度 金层2c位于表面区域正下方的至少内部区域。 然后，将包含拥挤的镍化合物的表面区域从金层2c去除，以暴露金层2c的内部区域的净化表面。 因此，通过以低成本使用少量的金，可以形成具有令人满意的与导线的粘合性的优异的电极。

公开(公告)号：US06282780B1

公开(公告)日：2001-09-04

申请号：US08796363

申请日：1997-02-06

申请人： Eisuke Waki ,  Tsuyoshi Takata ,  Hiroshi Haji

发明人： Eisuke Waki ,  Tsuyoshi Takata ,  Hiroshi Haji

IPC分类号： H05K332

CPC分类号： H01L24/11 ,  H01L24/45 ,  H01L24/78 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/451 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01082 ,  H01L2924/14 ,  Y10T29/49144 ,  Y10T29/49162 ,  H01L2224/48 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012

摘要： In a bump forming method and its forming apparatus, a torch is made to approach a bottom end of a wire extended from a capillary tool to form a ball, thereafter the wire is held by first clampers to lower the capillary tool, and the ball is inserted into the bottom end of the central hole of the capillary tool. Then, the wire is held by the first clampers so that it does not lower and cut by lowering of the capillary tool. Moreover, the capillary tool is further lowered and the ball is pressed against the electrode of a workpiece to bond the ball to the electrode to form a bump. A tail protruded from the bump is crushed by pressing a pressing jig against the tail to make the height of the bump uniform. Thereby, the ball is firmly bonded to the electrode and the joint surface between the ball and the electrode is not damaged.

摘要翻译： 在凸块成形方法及其成形装置中，将焊炬接近从毛细管工具延伸的导线的底端以形成球，此后，线由第一夹持器保持以降低毛细管工具，并且球是 插入毛细管工具的中心孔的底端。 然后，线由第一夹具保持，使得其不会通过降低毛细管工具而降低和切割。 此外，毛细管工具进一步降低，并且将球压在工件的电极上以将球接合到电极以形成凸块。 从凸起突出的尾巴通过将按压夹具压靠在尾部上而使其凸起的高度均匀。 由此，球牢固地结合到电极上，并且球和电极之间的接合表面不被损坏。

公开(公告)号：US6093904A

公开(公告)日：2000-07-25

申请号：US115759

申请日：1998-07-15

申请人： Hiroshi Haji

发明人： Hiroshi Haji

IPC分类号： B23K1/20 ,  B23K20/00 ,  H05K13/00 ,  B23K10/00

CPC分类号： H01L24/85 ,  B23K1/20 ,  B23K20/004 ,  H01L24/78 ,  H05K13/0061 ,  B23K2201/36 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/48644 ,  H01L2224/7865 ,  H01L2224/85013 ,  H01L2224/85444 ,  H01L24/45 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12041

摘要： There are disclosed a surface treatment apparatus and a wire bonding apparatus which are compact in size, have a high processing ability, are simple in construction, and achieve a low cost The surface treatment apparatus includes a base having a transfer path for transferring an object, a lid provided above the base for movement into and out of contact with an upper surface of the base, the lid contacting the base to form a sealed space on the upper surface of the base, an engagement and disengagement mechanism for moving the lid into and out of contact with the base, a transfer mechanism for feeding the object, disposed on the transfer path, into and out of a position beneath the lid when the lid is out of contact with the base, and a treatment portion for surface treating electrodes of the object disposed in the sealed space A wire bonding mechanism is provided at a downstream portion of the transfer path.

摘要翻译： 公开了一种表面处理装置和引线接合装置，其尺寸紧凑，加工能力强，结构简单，成本低廉。表面处理装置包括具有用于传送物体的传送路径的基座， 设置在基座上方的盖，用于移动进入和离开与基座的上表面接触，盖接触基座，以在基座的上表面上形成密封空间;接合和分离机构，用于将盖移动到 与所述底座接触不良的传送机构，用于当所述盖与所述基座不接触时，将设置在所述传送路径上的所述物体送入和移出所述盖子下方的位置的传送机构，以及用于表面处理电极的处理部 设置在密封空间中的物体引线接合机构设置在传送路径的下游部分。

公开(公告)号：US5909633A

公开(公告)日：1999-06-01

申请号：US979694

申请日：1997-11-26

申请人： Hiroshi Haji ,  Shoji Sakemi

发明人： Hiroshi Haji ,  Shoji Sakemi

IPC分类号： H01L21/48 ,  H01L23/498 ,  H05K3/24 ,  H05K3/34 ,  H01L21/44

CPC分类号： H05K3/244 ,  H01L21/4846 ,  H01L21/4864 ,  H01L23/3128 ,  H01L23/49811 ,  H01L24/85 ,  H05K3/3489 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85013 ,  H01L2224/85444 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01018 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19105

摘要： Nickel films 22, 25 are formed on copper pads 21, 24 on a substrate 11, and gold layers 23, 26 are further formed on the nickel films 22, 25. To suppress formation of compound of gold and tin which spoils reliability of soldering, formation of gold layers 23, 26 on the nickel films 22, 25 is effected by very thin substitutional plating method. As a result, a solder bump 17 is formed favorably. Besides, an nickel oxide film 32 formed on the surface of the gold layer 23 is removed by plasma etching. As a result, bonding of wire 15 is also excellent.

摘要翻译： 在基板11上的铜焊盘21,24上形成有镍膜22,25，并且在镍膜22,25上进一步形成金层23,26。为了抑制破坏焊接可靠性的金，锡化合物的形成， 在镍膜22,25上形成金层23,26通过非常薄的替代电镀方法来实现。 结果，有利地形成焊料凸块17。 此外，通过等离子体蚀刻除去形成在金层23的表面上的氧化镍膜32。 结果，导线15的接合也是优异的。

公开(公告)号：US5767008A

公开(公告)日：1998-06-16

申请号：US604072

申请日：1996-02-20

申请人： Hiroshi Haji

发明人： Hiroshi Haji

IPC分类号： H01L21/288 ,  H01L21/48 ,  H01L21/60 ,  H01L23/498 ,  H05K3/24 ,  H01L21/44

CPC分类号： H01L24/85 ,  H01L21/4846 ,  H01L23/49866 ,  H01L24/05 ,  H01L24/83 ,  H05K3/244 ,  H01L2224/04042 ,  H01L2224/05644 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48644 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/85009 ,  H01L2224/8501 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0665 ,  H01L2924/15787 ,  H01L2924/181 ,  Y10S428/901 ,  Y10T428/12861 ,  Y10T428/12868 ,  Y10T428/12889 ,  Y10T428/1291 ,  Y10T428/24917

摘要： A circuit pattern 2a, made of copper foil, is arranged on a substrate 1. A nickel-containing barrier metal layer 2b is formed on the.circuit pattern 2a. A gold layer 2c is formed on the barrier metal layer 2b by electroless substitution plating. Then, substrate 1 is heated up to impel nickel contained in the gold layer 2c to move toward a surface zone of the gold layer 2c to deposit nickel compound in the surface zone of the gold layer 2c, thereby enhancing the fineness of a remaining part of the gold layer 2c at at least an inside zone immediately below the surface zone. Then, the surface zone containing the crowded nickel compound is removed off the gold layer 2c so as to expose a purified surface of the inside zone of the gold layer 2c. Therefore, it becomes possible to form an excellent electrode having satisfactory bondability to the wire by using a less amount of gold at low costs.

摘要翻译： 由铜箔制成的电路图案2a布置在基板1上。在电路图案2a上形成含镍阻挡金属层2b。 通过无电镀替代电镀在阻挡金属层2b上形成金层2c。 然后，将基板1加热以推动包含在金层2c中的镍朝向金层2c的表面区移动，以在金层2c的表面区域中沉积镍化合物，从而提高剩余部分的细度 金层2c位于表面区域正下方的至少内部区域。 然后，将包含拥挤的镍化合物的表面区域从金层2c去除，以暴露金层2c的内部区域的净化表面。 因此，通过以低成本使用少量的金，可以形成具有令人满意的与导线的粘合性的优异的电极。

公开(公告)号：US5647942A

公开(公告)日：1997-07-15

申请号：US311276

申请日：1994-09-23

申请人： Hiroshi Haji

发明人： Hiroshi Haji

IPC分类号： B23K20/00 ,  H01L21/60 ,  H05K3/24 ,  B32B31/00

CPC分类号： H01L24/85 ,  B23K20/004 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/04042 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48644 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/85009 ,  H01L2224/8501 ,  H01L2224/85181 ,  H01L2224/85444 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L24/45 ,  H01L24/73 ,  H01L24/78 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0665

摘要： The wire bonding method of the present invention comprises a step of removing a thin surface layer of an electrode comprising a copper layer and a nickel layer formed on the surface of the copper layer and coated with gold on the surface, to thereby remove nickel hydroxide and nickel oxide present on the gold film and a step of electrically connecting a pad of a semiconductor chip fixed with a bonding agent on the substrate through an electrically conductive wire to the nickel hydroxide nickel oxide-eliminated electrode.

摘要翻译： 本发明的引线接合方法包括：除去在铜层的表面上形成的铜层和镍层的电极的薄表面层，并且在表面上涂覆金，从而除去氢氧化镍和 存在于金膜上的氧化镍和通过导电线将固定有基板上的接合剂的半导体芯片的焊盘电连接到氢氧化镍氧化镍除去电极的步骤。

公开(公告)号：US08450933B2

公开(公告)日：2013-05-28

申请号：US13145960

申请日：2010-01-25

申请人： Masaru Nonomura ,  Hiroshi Haji ,  Kiyoshi Arita

发明人： Masaru Nonomura ,  Hiroshi Haji ,  Kiyoshi Arita

IPC分类号： H01J7/24

CPC分类号： H01J37/32935 ,  Y02P90/22

摘要： A plasma processing apparatus includes a vacuum chamber, a plasma processing execution portion, a discharge state detecting unit, a window portion, a camera, a first storing portion, a second storing portion and an image data extracting unit. When an abnormal discharge is detected, the image data extracting unit extracts at least moving image data showing a generation state of the abnormal discharge from the first storing portion and stores the extracted moving image data in the second storing portion. When plasma processing is ended without the detection of the abnormal discharge, the image data extracting unit extracts, from the first storing portion, moving image data of a predetermined specific period or still image data of a specific period derived from the moving image data of the first storing portion and stores the extracted moving image data or the extracted still image data in the second storing portion.

摘要翻译： 等离子体处理装置包括真空室，等离子体处理执行部分，排出状态检测单元，窗口部分，照相机，第一存储部分，第二存储部分和图像数据提取单元。 当检测到异常放电时，图像数据提取单元至少提取表示来自第一存储部分的异常放电的生成状态的运动图像数据，并将所提取的运动图像数据存储在第二存储部分中。 在不检测到异常放电的情况下结束等离子体处理的情况下，图像数据提取部从第一存储部提取预定的特定期间的运动图像数据或者从图像数据的运动图像数据导出的特定期间的静止图像数据 第一存储部分，并将所提取的运动图像数据或所提取的静止图像数据存储在第二存储部分中。

公开(公告)号：US08192578B2

公开(公告)日：2012-06-05

申请号：US12089865

申请日：2006-10-13

申请人： Hiroshi Haji ,  Mitsuru Ozono ,  Teruaki Kasai ,  Kazuhiro Noda

发明人： Hiroshi Haji ,  Mitsuru Ozono ,  Teruaki Kasai ,  Kazuhiro Noda

IPC分类号： B32B38/10

CPC分类号： H01L21/67132 ,  H01L21/67092 ,  Y10S156/932 ,  Y10S156/943 ,  Y10S438/976 ,  Y10T156/1132 ,  Y10T156/1179 ,  Y10T156/1195 ,  Y10T156/1944 ,  Y10T156/1983 ,  Y10T156/1994

摘要： In the pickup apparatus wherein a chip adhered on a sheet is sucked and held by a picking nozzle and then picked up by the nozzle, a sheet push-up member configured by forming flexible elastic material such as rubber in a spherical shape is attached on the abutment supporting surface of the upper surface of a tool, then the push-up surface of the sheet push-up member is followed in a flat surface state along the lower surface of the sheet and abutted thereto in the moving down state of the picking nozzle, and then the push-up surface pushes up the lower surface of the sheet while being deformed in a upwardly protruded curved surface shape in the moving up operation where the picking nozzle moves up together with the chip. Thus, the chip can be released from the sheet from the outer peripheral side of the chip.

摘要翻译： 在拾取装置中，附着在片材上的芯片由拾取喷嘴吸引并保持，然后由喷嘴拾起，将通过形成球形的诸如橡胶的柔性弹性材料构成的片状上推构件安装在 工具上表面的基台支撑表面，则片材上推构件的上推表面沿着片材的下表面处于平坦表面状态，并且在拾取喷嘴的向下移动状态下与其邻接 然后在拾取喷嘴与芯片一起向上移动的上移操作中，上推表面向上推动纸张的下表面，同时以向上突出的曲面形状变形。 因此，芯片可以从芯片的外周侧从片材释放。

公开(公告)号：US20120021608A1

公开(公告)日：2012-01-26

申请号：US13255582

申请日：2010-04-09

申请人： Kiyoshi Arita ,  Hiroshi Haji

发明人： Kiyoshi Arita ,  Hiroshi Haji

IPC分类号： H01L21/306

CPC分类号： H01L24/27 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68322 ,  H01L2221/68327 ,  H01L2224/274 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/83191 ,  H01L2224/83194 ,  H01L2224/8385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/3512

摘要： To provide a substrate processing method and a semiconductor chip manufacturing method that enable low-cost formation of a mask for etching using plasma etching. During formation of a mask used in plasma dicing for separating a semiconductor wafer 1 into discrete semiconductor chips 1e by means of etching using plasma processing, there is adopted a method including printing a lyophobic liquid in an area on a rear surface 1b that is to be an objective of etching, thereby forming a lyophobic pattern made up of lyophobic films 3; supplying a low viscosity resin 4a and a high viscosity resin 4b, in this sequence, to the rear surface 1b on which the lyophobic pattern is formed, thereby forming a resin film 4 that is thicker than the lyophobic films 3 in an area where the lyophobic films 3 are not present; and curing the resin film 4, to thus form a mask 4* that covers an area except for the area to be etched. Thus, a mask for etching purpose can be formed at low cost without use of a high-cost method, like photolithography.