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159 条记录 (耗时 0.018 秒)

    Photonic crystal light emitting device
    21.
    发明授权
    Photonic crystal light emitting device 有权

    公开(公告)号：US07012279B2

    公开(公告)日：2006-03-14

    申请号：US10691026

    申请日：2003-10-21

    申请人： Jonathan J. Wierer Jr. ,  Michael R. Krames ,  Mihail M. Sigalas

    发明人： Jonathan J. Wierer Jr. ,  Michael R. Krames ,  Mihail M. Sigalas

    IPC分类号： H01L29/22

    CPC分类号： H01L33/20 ,  B82Y20/00 ,  G02B6/1225 ,  H01L33/08 ,  H01L2933/0083

    摘要： A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of second conductivity type, and an active region separating the first layer of first conductivity type from the first layer of second conductivity type. The tunnel junction includes a second layer of first conductivity type and a second layer of second conductivity type and separates the first layer of first conductivity type from a third layer of first conductivity type. A photonic crystal structure is formed in the third layer of first conductivity type.

    Semiconductor light emitting devices
    22.
    发明授权
    Semiconductor light emitting devices 有权
    半导体发光器件

    公开(公告)号：US06847057B1

    公开(公告)日：2005-01-25

    申请号：US10633058

    申请日：2003-08-01

    申请人： Nathan F. Gardner ,  Jonathan J. Wierer, Jr. ,  Gerd O. Mueller ,  Michael R. Krames

    发明人： Nathan F. Gardner ,  Jonathan J. Wierer, Jr. ,  Gerd O. Mueller ,  Michael R. Krames

    IPC分类号： H01L27/15 ,  H01L33/00 ,  H01L33/22 ,  H01L33/40

    CPC分类号： H01L33/405 ,  H01L33/0004 ,  H01L33/22

    摘要： A III-nitride device includes a first n-type layer, a first p-type layer, and an active region separating the first p-type layer and the first n-type layer. The device may include a second n-type layer and a tunnel junction separating the first and second n-type layers. First and second contacts are electrically connected to the first and second n-type layers. The first and second contacts are formed from the same material, a material with a reflectivity to light emitted by the active region greater than 75%. The device may include a textured layer disposed between the second n-type layer and the second contact or formed on a surface of a growth substrate opposite the device layers.

    摘要翻译： III族氮化物器件包括第一n型层，第一p型层和分离第一p型层和第一n型层的有源区。 该装置可以包括第二n型层和分隔第一和第二n型层的隧道结。 第一和第二触点电连接到第一和第二n型层。 第一和第二触点由相同的材料形成，对有源区域发射的光的反射率大于75％的材料形成。 该器件可以包括布置在第二n型层和第二接触之间的纹理化层，或者形成在与器件层相对的生长衬底的表面上。

    Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including same
    26.
    发明授权
    Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including same 有权
    形成半导体材料的弛豫层，半导体结构，器件和包括其的工程衬底的方法

    公开(公告)号：US08486771B2

    公开(公告)日：2013-07-16

    申请号：US12563953

    申请日：2009-09-21

    申请人： Fabrice Letertre ,  Bruce Faure ,  Michael R. Krames ,  Nathan F. Gardner

    发明人： Fabrice Letertre ,  Bruce Faure ,  Michael R. Krames ,  Nathan F. Gardner

    IPC分类号： H01L21/00

    CPC分类号： H01L21/02639 ,  H01L21/02367 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254

    摘要： Methods of fabricating relaxed layers of semiconductor materials include forming structures of a semiconductor material overlying a layer of a compliant material, and subsequently altering a viscosity of the compliant material to reduce strain within the semiconductor material. The compliant material may be reflowed during deposition of a second layer of semiconductor material. The compliant material may be selected so that, as the second layer of semiconductor material is deposited, a viscosity of the compliant material is altered imparting relaxation of the structures. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Methods of fabricating semiconductor structures and devices are also disclosed. Novel intermediate structures are formed during such methods. Engineered substrates include a plurality of structures comprising a semiconductor material disposed on a layer of material exhibiting a changeable viscosity.

    摘要翻译： 制造半导体材料的松弛层的方法包括形成覆盖柔性材料层的半导体材料的结构，随后改变柔性材料的粘度以减小半导体材料内的应变。 在沉积第二层半导体材料期间，柔性材料可以回流。 可以选择柔性材料，使得当沉积第二层半导体材料时，改变柔性材料的粘度赋予结构松弛性。 在一些实施例中，半导体材料层可以包括III-V型半导体材料，例如氮化铟镓。 还公开了制造半导体结构和器件的方法。 在这种方法中形成了新的中间结构。 工程衬底包括多个结构，其包括设置在表现出可变粘度的材料层上的半导体材料。

    COMMON OPTICAL ELEMENT FOR AN ARRAY OF PHOSPHOR CONVERTED LIGHT EMITTING DEVICES
    27.
    发明申请
    COMMON OPTICAL ELEMENT FOR AN ARRAY OF PHOSPHOR CONVERTED LIGHT EMITTING DEVICES 有权
    磷光转换发光装置阵列的通用光学元件

    公开(公告)号：US20120043564A1

    公开(公告)日：2012-02-23

    申请号：US13288291

    申请日：2011-11-03

    申请人： MICHAEL D. CAMRAS ,  WILLIAM R. IMLER ,  FRANKLIN J. WALL, JR. ,  FRANK M. STERANKA ,  MICHAEL R. KRAMES ,  HELENA TICHA ,  LADISLAV TICHY ,  Robertus G. Alferink

    发明人： MICHAEL D. CAMRAS ,  WILLIAM R. IMLER ,  FRANKLIN J. WALL, JR. ,  FRANK M. STERANKA ,  MICHAEL R. KRAMES ,  HELENA TICHA ,  LADISLAV TICHY ,  Robertus G. Alferink

    IPC分类号： H01L33/08

    CPC分类号： H05B33/0857 ,  H01L25/0753 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A device is provided with at least one light emitting device (LED) die mounted on a submount with an optical element subsequently thermally bonded to the LED die. The LED die is electrically coupled to the submount through contact bumps that have a higher temperature melting point than is used to thermally bond the optical element to the LED die. In one implementation, a single optical element is bonded to a plurality of LED dice that are mounted to the submount and the submount and the optical element have approximately the same coefficients of thermal expansion. Alternatively, a number of optical elements may be used. The optical element or LED die may be covered with a coating of wavelength converting material. In one implementation, the device is tested to determine the wavelengths produced and additional layers of the wavelength converting material are added until the desired wavelengths are produced.

    摘要翻译： 设备具有至少一个发光器件（LED）裸片，该发光器件（LED）裸片安装在具有随后热粘合到LED管芯上的光学元件的基座上。 LED管芯通过接触凸块电连接到副安装座，接触凸块具有比用于将光学元件热粘合到LED管芯的温度高的熔点。 在一个实现中，单个光学元件被结合到安装到基座上的多个LED芯片，并且基座和光学元件具有大致相同的热膨胀系数。 或者，可以使用多个光学元件。 光学元件或LED管芯可以用波长转换材料的涂层覆盖。 在一个实施方案中，测试该器件以确定产生的波长，并且添加波长转换材料的附加层，直到产生所需的波长。

    SERIES CONNECTED FLIP CHIP LEDS WITH GROWTH SUBSTRATE REMOVED
    28.
    发明申请
    SERIES CONNECTED FLIP CHIP LEDS WITH GROWTH SUBSTRATE REMOVED 有权
    系列连接的切片芯片，带有生长基板去除

    公开(公告)号：US20120025231A1

    公开(公告)日：2012-02-02

    申请号：US13269669

    申请日：2011-10-10

    申请人： Michael R. Krames ,  John E. Epler ,  Daniel A. Steigerwald ,  Tal Margalith

    发明人： Michael R. Krames ,  John E. Epler ,  Daniel A. Steigerwald ,  Tal Margalith

    IPC分类号： H01L33/08

    CPC分类号： H01L33/0079 ,  H01L21/2654 ,  H01L27/153

    摘要： LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.

    摘要翻译： LED层生长在蓝宝石衬底上。 单个倒装芯片LED通过挖沟或掩模离子注入形成。 包含多个LED的模块被切割并安装在底座晶片上。 在LED上形成的基座金属图案或金属图案将模块中的LED串联连接。 然后去除生长衬底，例如通过激光剥离。 在安装之前或之后形成半绝缘层，将LED机械连接在一起。 半绝缘层可以通过在衬底和LED层之间离子注入层来形成。 可以通过偏置半绝缘层来执行衬底去除后露出的半绝缘层的PEC蚀刻。 然后将底座切成块，以创建包含串联LED的LED模块。

    Compliant bonding structures for semiconductor devices
    30.
    发明授权
    Compliant bonding structures for semiconductor devices 有权
    适用于半导体器件的接合结构

    公开(公告)号：US08053905B2

    公开(公告)日：2011-11-08

    申请号：US12897866

    申请日：2010-10-05

    申请人： John E. Epler ,  Michael R. Krames ,  James G. Neff ,  Stefano Schiaffino

    发明人： John E. Epler ,  Michael R. Krames ,  James G. Neff ,  Stefano Schiaffino

    IPC分类号： H01L23/48

    CPC分类号： H01L33/38 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/1403

    摘要： A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, a metal p-contact disposed on the p-type region, and a metal n-contact disposed on the n-type region. The metal p-contact and the metal n-contact are both formed on the same side of the semiconductor structure. The light emitting device is connected to a mount by a bonding structure. The bonding structure includes a plurality of metal regions separated by gaps and a metal structure disposed between the light emitting device and the mount proximate to an edge of the light emitting device. The metal structure is configured such that during bonding, the metal structure forms a continuous seal between the light emitting device and the mount.

    摘要翻译： 发光器件包括：半导体结构，包括设置在n型区域和p型区域之间的发光层，设置在p型区域上的金属p型触点和设置在n型区域上的金属n型触点 型区域。 金属p型接触和金属n型接触都形成在半导体结构的同一侧。 发光器件通过接合结构连接到安装件。 接合结构包括由间隙隔开的多个金属区域和设置在发光器件和靠近发光器件的边缘的安装件之间的金属结构。 金属结构构造成使得在接合期间，金属结构在发光器件和安装座之间形成连续的密封。