公开(公告)号：US08633087B2

公开(公告)日：2014-01-21

申请号：US13814037

申请日：2012-03-26

申请人： Hideki Matsubara ,  Kuniaki Ishihara

发明人： Hideki Matsubara ,  Kuniaki Ishihara

IPC分类号： H01L21/46

CPC分类号： H01L21/50 ,  H01L21/187 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L33/0079 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/0603 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/81005 ,  H01L2924/1033 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/00

摘要： A method of manufacturing a GaN-based semiconductor device includes the steps of: preparing a composite substrate including: a support substrate having a thermal expansion coefficient at a ratio of not less than 0.8 and not more than 1.2 relative to a thermal expansion coefficient of GaN; and a GaN layer bonded to the support substrate, using an ion implantation separation method; growing at least one GaN-based semiconductor layer on the GaN layer of the composite substrate; and removing the support substrate of the composite substrate by dissolving the support substrate. Thus, the method of manufacturing a GaN-based semiconductor device is provided by which GaN-based semiconductor devices having excellent characteristics can be manufactured at a high yield ratio.

摘要翻译： 制造GaN基半导体器件的方法包括以下步骤：制备复合衬底，该复合衬底包括：热膨胀系数相对于GaN的热膨胀系数不小于0.8且不大于1.2的支撑衬底 ; 以及使用离子注入分离方法结合到所述支撑衬底的GaN层; 在复合衬底的GaN层上生长至少一个GaN基半导体层; 以及通过溶解所述支撑基板来移除所述复合基板的所述支撑基板。 因此，提供了制造GaN基半导体器件的方法，通过其可以以高屈服比制造具有优异特性的GaN基半导体器件。

公开(公告)号：US08605769B2

公开(公告)日：2013-12-10

申请号：US11665286

申请日：2005-12-06

申请人： Susumu Yoshimoto ,  Hideki Matsubara ,  Hirohisa Saitou ,  Takashi Misaki ,  Fumitake Nakanishi ,  Hiroki Mori

发明人： Susumu Yoshimoto ,  Hideki Matsubara ,  Hirohisa Saitou ,  Takashi Misaki ,  Fumitake Nakanishi ,  Hiroki Mori

IPC分类号： H01S3/08

CPC分类号： H01S5/18 ,  B82Y20/00 ,  G02B6/1225 ,  H01S5/105 ,  H01S5/34333 ,  H01S2301/14 ,  H01S2304/04 ,  H01S2304/12

摘要： A semiconductor laser device includes: a substrate having a principal plane; a photonic crystal layer having an epitaxial layer of gallium nitride formed on substrate in a direction in which principal plane extends and a low refractive index material having a refractive index lower than that of epitaxial layer; an n-type clad layer formed on substrate; a p-type clad layer formed on substrate; an active layer that is interposed between n-type clad layer and p-type clad layer and emits light when a carrier is injected thereinto; and a GaN layer that covers a region directly on photonic crystal layer. Thus, the semiconductor laser device can be manufactured without fusion.

摘要翻译： 半导体激光装置包括：具有主平面的基板; 具有在主平面延伸的方向上形成在衬底上的氮化镓外延层和折射率低于外延层的低折射率材料的光子晶体层; 形成在基板上的n型覆层; 形成在基板上的p型覆层; 介于n型覆盖层和p型覆盖层之间的有源层，并且在载体被注入时发射光; 以及覆盖直接在光子晶体层上的区域的GaN层。 因此，可以不融合地制造半导体激光装置。

公开(公告)号：US20130168693A1

公开(公告)日：2013-07-04

申请号：US13820599

申请日：2012-02-13

申请人： Issei Satoh ,  Hiroaki Yoshida ,  Yoshiyuki Yamamoto ,  Akihiro Hachigo ,  Hideki Matsubara

发明人： Issei Satoh ,  Hiroaki Yoshida ,  Yoshiyuki Yamamoto ,  Akihiro Hachigo ,  Hideki Matsubara

IPC分类号： H01L29/20 ,  H01L21/02

CPC分类号： H01L29/2003 ,  H01L21/02104 ,  H01L21/76254

摘要： A protective-film-attached composite substrate includes a support substrate, an oxide film disposed on the support substrate, a semiconductor layer disposed on the oxide film, and a protective film protecting the oxide film by covering a portion that is a part of the oxide film and covered with none of the support substrate and the semiconductor layer. A method of manufacturing a semiconductor device includes the steps of: preparing the protective-film-attached composite substrate; and epitaxially growing, on the semiconductor layer of the protective-film-attached composite substrate, at least one functional semiconductor layer causing an essential function of a semiconductor device to be performed. Thus, there are provided a protective-film-attached composite substrate having a large effective region where a high-quality functional semiconductor layer can be epitaxially grown, and a method of manufacturing a semiconductor device in which the protective-film-attached composite substrate is used.

摘要翻译： 保护膜附着复合基板包括支撑基板，设置在支撑基板上的氧化膜，设置在氧化膜上的半导体层，以及通过覆盖作为氧化物的一部分的部分来保护氧化膜的保护膜 并且不覆盖支撑基板和半导体层。 制造半导体器件的方法包括以下步骤：制备保护膜附着复合衬底; 并且在保护膜附着复合衬底的半导体层上外延生长至少一个引起半导体器件的基本功能的功能半导体层。 因此，提供了可以外延生长高品质功能半导体层的具有大的有效区域的保护膜附着复合基板，以及制造其中保护膜附着复合基板的半导体器件的制造方法 用过的。

公开(公告)号：US20130032928A1

公开(公告)日：2013-02-07

申请号：US13641582

申请日：2011-11-07

申请人： Issei Satoh ,  Hiroaki Yoshida ,  Yoshiyuki Yamamoto ,  Akihiro Hachigo ,  Hideki Matsubara

发明人： Issei Satoh ,  Hiroaki Yoshida ,  Yoshiyuki Yamamoto ,  Akihiro Hachigo ,  Hideki Matsubara

IPC分类号： H01L29/20

CPC分类号： H01L21/76254 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/0254

摘要： A group III nitride composite substrate includes a support substrate, an oxide film formed on the support substrate, and a group III nitride layer formed on the oxide film. The oxide film may be a film selected from the group consisting of a TiO2 film and a SrTiO3 film, and an impurity may be added to the oxide film. Accordingly, the group III nitride composite substrate having a high bonding strength between the support substrate and the group III nitride layer is provided.

摘要翻译： III族氮化物复合衬底包括支撑衬底，形成在支撑衬底上的氧化物膜和形成在氧化物膜上的III族氮化物层。 氧化物膜可以是选自TiO 2膜和SrTiO 3膜的膜，并且可以向氧化物膜中添加杂质。 因此，提供了在支撑基板和III族氮化物层之间具有高结合强度的III族氮化物复合基板。

公开(公告)号：US06348140B1

公开(公告)日：2002-02-19

申请号：US09541903

申请日：2000-04-03

申请人： Hideki Matsubara ,  Noboru Matsui ,  Nobuhiro Hayakawa

发明人： Hideki Matsubara ,  Noboru Matsui ,  Nobuhiro Hayakawa

IPC分类号： G01N27407

CPC分类号： G01N27/4067 ,  G01N27/419

摘要： A high temperature sensor allowing for accurate measurement including wires running through an oxygen ion conductor and connecting to electrodes sandwiching an oxygen ion conductor substrate having an electrical resistance far smaller than the combined resistance (Rpvs) appearing across the lead wires, where Rpvs is determined by way of a pulse voltage sensing method applied across the electrodes. In the case of a two cavity sensor for NOx measurement, Rpvs is not less than 2.6 times greater, or more preferably 4 times greater than the resistance of the wires. In another embodiment, a common internal oxygen reference source cavity is formed inside the oxygen ion conductor so as to provide the same oxygen partial pressure base for other cavities.

摘要翻译： 一种高温传感器，允许精确测量，包括穿过氧离子导体的导线并连接到夹持氧离子导体衬底的电极，该氧离子导体衬底的电阻远远小于出现在引线两端的组合电阻（Rpvs），其中Rpvs由 施加在电极上的脉冲电压感测方法。 在用于NOx测量的两个空腔传感器的情况下，R pvs不小于电线的电阻的2.6倍或更优选的4倍。 在另一个实施例中，在氧离子导体内部形成公共内部氧参考源腔，以便为其它空腔提供相同的氧分压基座。

公开(公告)号：US5864573A

公开(公告)日：1999-01-26

申请号：US636563

申请日：1996-04-23

申请人： Yoshiki Miura ,  Hideki Matsubara ,  Hisashi Seki ,  Akinori Koukitu

发明人： Yoshiki Miura ,  Hideki Matsubara ,  Hisashi Seki ,  Akinori Koukitu

IPC分类号： H01L21/205 ,  H01L33/12 ,  H01L33/32 ,  H01S5/02 ,  H01S5/323 ,  H01S3/19 ,  H01L21/20

CPC分类号： H01L21/02392 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： A compound semiconductor light emitting device having a long life and high performance and a method for industrially fabricating the same are provided. The compound semiconductor light emitting device includes a GaP substrate, a buffer layer consisting of InN which is formed on the substrate, a relaxation layer consisting of In.sub.x Ga.sub.1-x N which is formed on the buffer layer, and a luminescent layer consisting of In.sub.k Ga.sub.1-k N which is formed on the relaxation layer. In this description, k represents a constant value within the range of 0

摘要翻译： 提供了具有长寿命和高性能的化合物半导体发光器件及其工业制造方法。 化合物半导体发光器件包括GaP衬底，由衬底上形成的InN构成的缓冲层，形成在缓冲层上的由In x Ga 1-x N构成的弛豫层和由InkGa1-kN组成的发光层， 形成在松弛层上。 在本说明书中，k表示在0

公开(公告)号：US08962365B2

公开(公告)日：2015-02-24

申请号：US13696873

申请日：2011-12-21

申请人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

发明人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

IPC分类号： H01L21/00 ,  H01L21/02 ,  C30B23/02 ,  C30B25/18 ,  C30B29/40

CPC分类号： H01L21/0254 ,  C03C10/0018 ,  C04B35/106 ,  C04B35/16 ,  C04B35/185 ,  C04B35/481 ,  C04B35/486 ,  C04B35/488 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3246 ,  C04B2235/3463 ,  C04B2235/9607 ,  C30B23/025 ,  C30B25/183 ,  C30B29/406 ,  H01L21/02002 ,  H01L21/02422 ,  H01L21/02436 ,  H01L21/02458 ,  H01L21/02658 ,  H01L21/02664

摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.

摘要翻译： 本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括可溶于氢氟酸的支撑基板和布置在支撑基板的主表面侧的单晶膜，热膨胀系数 支撑基板的主表面比GaN晶体大0.8倍以上且小于热膨胀系数的1.2倍，在配置在该基板侧的单晶膜的主面上形成GaN基膜 支撑基板的主表面，并且通过将支撑基板溶解在氢氟酸中来除去支撑基板。 因此，提供了能够有效地获得具有较大主表面积，较少翘曲和良好结晶度的GaN基膜的GaN基膜的制造方法以及用于其的复合基板。

公开(公告)号：US08697550B2

公开(公告)日：2014-04-15

申请号：US13643206

申请日：2011-11-10

申请人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

发明人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

IPC分类号： H01L21/20

CPC分类号： H01L33/007 ,  H01L21/76256 ,  H01L33/0079

摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

摘要翻译： 本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括主表面的热膨胀系数大于0.8倍且小于1.2倍的支撑基板 GaN晶体沿轴向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于主表面的轴线具有三重对称性 单晶膜，并且在复合衬底中的单晶膜的主表面上形成GaN基膜。 因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

公开(公告)号：US20130040442A1

公开(公告)日：2013-02-14

申请号：US13643206

申请日：2011-11-10

申请人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

发明人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

IPC分类号： H01L21/20

CPC分类号： H01L33/007 ,  H01L21/76256 ,  H01L33/0079

摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

摘要翻译： 本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括主表面的热膨胀系数大于0.8倍且小于1.2倍的支撑基板 GaN晶体沿轴向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于主表面的轴线具有三重对称性 单晶膜，并且在复合衬底中的单晶膜的主表面上形成GaN基膜。 因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

公开(公告)号：US06642547B2

公开(公告)日：2003-11-04

申请号：US10114082

申请日：2002-04-01

申请人： Hideki Matsubara ,  Toshihiko Takebe ,  Hiroki Ishinaga ,  Mamoru Maegawa

发明人： Hideki Matsubara ,  Toshihiko Takebe ,  Hiroki Ishinaga ,  Mamoru Maegawa

IPC分类号： H01L2918

CPC分类号： H01L33/28 ,  H01L33/56 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L2924/00012 ,  H01L2924/00014

摘要： The present invention provide a light emitting device including: a resin base having a patterned interconnection; an n-type ZnSe substrate mounted on the resin base; an epitaxial light emission structure formed of a compound crystal relating to ZnSe serving as a matrix, formed on the ZnSe substrate and emitting light when an electric current is applied. A reflector is so constructed and positioned that a spatial distribution of the light emission intensity of the fluorescence light approximates the light emission intensity of the epitaxial light emission structure. The fluorescence light is produced in the ZnSe substrate excited by with the light emission from the epitaxial light emission structure.

摘要翻译： 本发明提供一种发光器件，包括：具有图案化互连的树脂基底; 安装在树脂基材上的n型ZnSe基板; 由与ZnSe基体相关的复合晶体形成的外延发光结构，形成在ZnSe基板上，并在施加电流时发光。 反射器的构造和定位使得荧光的发光强度的空间分布近似于外延发光结构的发光强度。 在由外延发光结构的发光激发的ZnSe衬底中产生荧光。