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    Light emitting devices with low packaging factor
    22.
    发明授权
    Light emitting devices with low packaging factor 有权
    具有低封装因素的发光器件

    公开(公告)号：US08957440B2

    公开(公告)日：2015-02-17

    申请号：US13252448

    申请日：2011-10-04

    申请人： James Ibbetson ,  David Todd Emerson

    发明人： James Ibbetson ,  David Todd Emerson

    IPC分类号： H01L29/22 ,  H01L33/54 ,  H01L33/22 ,  H01L33/40 ,  H01L33/46

    CPC分类号： H01L33/54 ,  H01L33/22 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

    摘要： A light emitting diode die that when encapsulated within an overmolded hemispherical lens has a packaging factor less than 1.2. The light emitting diode die may include a stacked structure including a metal overlay, a composite high reflectivity mirror on the metal overlay, a transparent conductive oxide layer on the composite high reflectivity mirror, and a diode structure on the transparent conductive oxide layer. The diode structure may include a roughened surface opposite the transparent conductive oxide layer, a submount connected to the composite high reflectivity mirror and a bond metal between the submount and the metal overlay. A conductive via may extend through the composite high reflectivity mirror and electrically connect the transparent conductive oxide and the bond metal.

    摘要翻译： 当封装在包覆成型的半球形透镜中时，发光二极管管芯的封装因子小于1.2。 发光二极管管芯可以包括金属覆层，金属覆层上的复合高反射镜，复合高反射镜上的透明导电氧化物层和透明导电氧化物层上的二极管结构的层叠结构。 二极管结构可以包括与透明导电氧化物层相对的粗糙表面，连接到复合高反射率反射镜的基座和底座和金属覆盖层之间的接合金属。 导电通孔可以延伸穿过复合高反射镜并电连接透明导电氧化物和接合金属。

    Emitter package with angled or vertical LED
    24.
    发明授权
    Emitter package with angled or vertical LED 有权
    发光二极管，带角度或垂直LED

    公开(公告)号：US08748915B2

    公开(公告)日：2014-06-10

    申请号：US12868567

    申请日：2010-08-25

    申请人： Alex Chi Keung Chan ,  David Todd Emerson

    发明人： Alex Chi Keung Chan ,  David Todd Emerson

    IPC分类号： H01L33/08

    CPC分类号： H01L33/48 ,  C09K11/7731 ,  C09K11/7734 ,  C09K11/7774 ,  G02B6/0023 ,  G02B6/0068 ,  G02B6/0073 ,  H01L33/486 ,  H01L33/50 ,  H01L33/52 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： The present invention is directed to LED packages and LED displays utilizing the LED packages, wherein the LED chips within the packages are arranged in unique orientations to provide the desired package or display FFP. One LED package according to the present invention comprises a reflective cup and an LED chip mounted in the reflective cup. The reflective cup has a first axis and a second axis orthogonal to the first axis, wherein the LED chip is rotated within the reflective cup so that the LED chip is out of alignment with said first axis. Some of the LED packages can comprise a rectangular LED chip having a chip longitudinal axis and an oval shaped reflective cup having a cup longitudinal axis. The LED chip is mounted within the reflective cup with the chip longitudinal axis angled from the cup longitudinal axis. LED displays according to the present invention comprise a plurality of LED packages, at least some of which have an LED chip mounted in a reflective cup at different angles to achieve the desired display FFP.

    摘要翻译： 本发明涉及使用LED封装的LED封装和LED显示器，其中封装内的LED芯片以独特的取向布置以提供所需的封装或显示器FFP。 根据本发明的一个LED封装包括安装在反射杯中的反射杯和LED芯片。 反射杯具有与第一轴正交的第一轴和第二轴，其中LED芯片在反射杯内旋转，使得LED芯片与所述第一轴线不对准。 一些LED封装可以包括具有芯片纵向轴线的矩形LED芯片和具有杯纵向轴线的椭圆形反射杯。 LED芯片安装在反射杯内，其芯片纵向轴线从杯纵向轴线成角度。 根据本发明的LED显示器包括多个LED封装，其至少其中一些具有以不同角度安装在反射杯中的LED芯片以实现期望的显示器FFP。

    Ultraviolet light emitting diode
    25.
    再颁专利
    Ultraviolet light emitting diode 有权
    紫外发光二极管

    公开(公告)号：USRE43725E1

    公开(公告)日：2012-10-09

    申请号：US11432793

    申请日：2006-05-11

    申请人： David Todd Emerson ,  Amber Christine Abare ,  Michael John Bergmann

    发明人： David Todd Emerson ,  Amber Christine Abare ,  Michael John Bergmann

    IPC分类号： H01L21/00

    CPC分类号： H01L33/04 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32 ,  Y10S438/93

    摘要： A light emitting diode is disclosed. The diode includes a silicon carbide substrate having a first conductivity type, a first gallium nitride layer above the SiC substrate having the same conductivity type as the substrate, a superlattice on the GaN layer formed of a plurality of repeating sets of alternating layers selected from among GaN, InGaN, and AlInGaN, a second GaN layer on the superlattice having the same conductivity type as the first GaN layer, a multiple quantum well on the second GaN layer, a third GaN layer on the multiple quantum well, a contact structure on the third GaN layer having the opposite conductivity type from the substrate and the first GaN layer, an ohmic contact to the SiC substrate, and an ohmic contact to the contact structure.

    摘要翻译： 公开了一种发光二极管。 二极管包括具有第一导电类型的碳化硅衬底，在SiC衬底之上的与衬底具有相同导电类型的第一氮化镓层，在由多个重复的交替层组成的GaN层上形成的超晶格， GaN，InGaN和AlInGaN，具有与第一GaN层相同的导电类型的超晶格上的第二GaN层，第二GaN层上的多量子阱，多量子阱上的第三GaN层， 与衬底和第一GaN层具有相反导电类型的第三GaN层，与SiC衬底的欧姆接触以及与接触结构的欧姆接触。

    METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES
    26.
    发明申请
    METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES 有权
    形成具有减少电流结构的发光装置的方法

    公开(公告)号：US20120153343A1

    公开(公告)日：2012-06-21

    申请号：US13406251

    申请日：2012-02-27

    申请人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, JR. ,  Matthew Donofrio ,  John Edmond

    发明人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, JR. ,  Matthew Donofrio ,  John Edmond

    IPC分类号： H01L33/48 ,  H01L33/36

    CPC分类号： H01L33/145 ,  H01L24/05 ,  H01L33/14 ,  H01L33/38 ,  H01L2224/49107 ,  H01L2933/0016

    摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.

    摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。

    Group III nitride based quantum well light emitting device structures with an indium containing capping structure
    28.
    发明授权
    Group III nitride based quantum well light emitting device structures with an indium containing capping structure 有权
    具有含铟封端结构的III族氮化物基量子阱发光器件结构

    公开(公告)号：US08044384B2

    公开(公告)日：2011-10-25

    申请号：US12698658

    申请日：2010-02-02

    申请人： Michael John Bergmann ,  David Todd Emerson

    发明人： Michael John Bergmann ,  David Todd Emerson

    IPC分类号： H01L33/00

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/32

    摘要： Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.

    摘要翻译： 提供III族氮化物基发光器件和制造III族氮化物基发光器件的方法。 发光器件包括n型III族氮化物层，n型III族氮化物层上的III族氮化物基有源区，并且包含至少一个量子阱结构，在有源区上包括铟的III族氮化物层， 在包括铟的III族氮化物层上包括铝的p型III族氮化物层，n型III族氮化物层上的第一接触和p型III族氮化物层上的第二接触。 包括铟的III族氮化物层也可以包括铝。

    Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices
    29.
    发明授权
    Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices 有权
    用于氮化镓基器件的基于氮化镓的基于欧姆接触层

    公开(公告)号：US07791101B2

    公开(公告)日：2010-09-07

    申请号：US12145213

    申请日：2008-06-24

    申请人： Michael John Bergmann ,  Daniel Carleton Driscoll ,  David Todd Emerson

    发明人： Michael John Bergmann ,  Daniel Carleton Driscoll ,  David Todd Emerson

    IPC分类号： H01L29/26

    CPC分类号： H01L33/0079 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01L33/405

    摘要： Light emitting devices include a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer, for example gallium nitride. A indium nitride-based layer, such as indium gallium nitride, is provided directly on the outer layer. A reflective metal layer or a transparent conductive oxide layer is provided directly on the indium gallium nitride layer opposite the outer layer. The indium gallium nitride layer forms a direct ohmic contact with the outer layer. An ohmic metal layer need not be used. Related fabrication methods are also disclosed.

    摘要翻译： 发光器件包括氮化镓基外延结构，其包括活性发光区和氮化镓基外层，例如氮化镓。 诸如氮化铟镓的氮化铟基层直接设置在外层上。 反射金属层或透明导电氧化物层直接设置在与外层相反的氮化铟镓层上。 氮化铟镓层与外层形成直接的欧姆接触。 不需要使用欧姆金属层。 还公开了相关的制造方法。