公开(公告)号：US20190304931A1

公开(公告)日：2019-10-03

申请号：US16150075

申请日：2018-10-02

Applicant: Intel Corporation

Inventor： Pramod Malatkar ,  Sairam Agraharam ,  Shawna Liff

IPC: H01L23/00 ,  H01L23/13 ,  H01L21/78 ,  H01L29/06 ,  H01L23/498 ,  H05K1/02 ,  H01L21/02

Abstract: Electronic device shape configuration technology is disclosed. In an example, an electronic device substrate is provided that can comprise a top surface, and a bottom surface opposing the top surface. The top surface and/or the bottom surface can have a non-rectangular shaped perimeter. An electronic device die is also provided that can comprise a top surface, and a bottom surface opposing the top surface. The top surface and/or the bottom surface can have a non-rectangular shaped perimeter. In addition, an electronic device package is provided that can comprise a substrate having a top surface configured to receive a die and a bottom surface opposing the top surface. The package can also include a die having a top surface and a bottom surface opposing the top surface. The die can be coupled to the top surface of the substrate. The top surface and/or the bottom surface of either the substrate, or the die, or both can have a non-rectangular shaped perimeter.

公开(公告)号：US10128225B2

公开(公告)日：2018-11-13

申请号：US15436291

申请日：2017-02-17

Applicant: INTEL CORPORATION

Inventor： Sandeep Razdan ,  Edward R. Prack ,  Sairam Agraharam ,  Robert L. Sankman ,  Shan Zhong ,  Robert M. Nickerson

IPC: H01L25/00 ,  H01L21/56 ,  H01L23/00 ,  H01L23/532 ,  H01L23/528 ,  H01L25/065 ,  H01L23/31

Abstract: Embodiments of the present disclosure are directed towards techniques and configurations of interconnect structures having a polymer core in integrated circuit (IC) package assemblies. In one embodiment, an apparatus includes a first die having a plurality of transistor devices disposed on an active side of the first die and a plurality of interconnect structures electrically coupled with the first die, wherein individual interconnect structures of the plurality of interconnect structures have a polymer core, and an electrically conductive material disposed on the polymer core, the electrically conductive material being configured to route electrical signals between the transistor devices of the first die and a second die. Other embodiments may be described and/or claimed.

公开(公告)号：US20170229438A1

公开(公告)日：2017-08-10

申请号：US15436291

申请日：2017-02-17

Applicant: INTEL CORPORATION

Inventor： Sandeep Razdan ,  Edward R. Prack ,  Sairam Agraharam ,  Robert L. Sankman ,  Shan Zhong ,  Robert M. Nickerson

IPC: H01L25/00 ,  H01L23/00 ,  H01L23/31 ,  H01L23/528 ,  H01L25/065 ,  H01L21/56 ,  H01L23/532

CPC classification number: H01L25/50 ,  C09J9/02 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49866 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/5329 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/95 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/12105 ,  H01L2224/13005 ,  H01L2224/13025 ,  H01L2224/16113 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29078 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/2939 ,  H01L2224/29411 ,  H01L2224/29439 ,  H01L2224/29444 ,  H01L2224/29447 ,  H01L2224/29455 ,  H01L2224/29499 ,  H01L2224/73104 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/83851 ,  H01L2224/83856 ,  H01L2224/83862 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13613 ,  H01L2924/014 ,  H01L2924/207 ,  H01L2924/0665 ,  H01L2924/00

Abstract: Embodiments of the present disclosure are directed towards techniques and configurations of interconnect structures having a polymer core in integrated circuit (IC) package assemblies. In one embodiment, an apparatus includes a first die having a plurality of transistor devices disposed on an active side of the first die and a plurality of interconnect structures electrically coupled with the first die, wherein individual interconnect structures of the plurality of interconnect structures have a polymer core, and an electrically conductive material disposed on the polymer core, the electrically conductive material being configured to route electrical signals between the transistor devices of the first die and a second die. Other embodiments may be described and/or claimed.

公开(公告)号：US20170186705A1

公开(公告)日：2017-06-29

申请号：US14757835

申请日：2015-12-26

Applicant: Intel Corporation

Inventor： Pramod Malatkar ,  Sairam Agraharam ,  Shawna Liff

IPC: H01L23/00 ,  H01L23/498

CPC classification number: H01L23/564 ,  H01L21/02002 ,  H01L21/78 ,  H01L23/13 ,  H01L23/49838 ,  H01L23/562 ,  H01L24/80 ,  H01L29/0657 ,  H01L2924/10155 ,  H01L2924/15158 ,  H05K1/02 ,  H05K1/0271 ,  H05K2201/09027

Abstract: Electronic device shape configuration technology is disclosed. In an example, an electronic device substrate is provided that can comprise a top surface, and a bottom surface opposing the top surface. The top surface and/or the bottom surface can have a non-rectangular shaped perimeter. An electronic device die is also provided that can comprise a top surface, and a bottom surface opposing the top surface. The top surface and/or the bottom surface can have a non-rectangular shaped perimeter. In addition, an electronic device package is provided that can comprise a substrate having a top surface configured to receive a die and a bottom surface opposing the top surface. The package can also include a die having a top surface and a bottom surface opposing the top surface. The die can be coupled to the top surface of the substrate. The top surface and/or the bottom surface of either the substrate, or the die, or both can have a non-rectangular shaped perimeter.

公开(公告)号：US09391013B2

公开(公告)日：2016-07-12

申请号：US14813014

申请日：2015-07-29

Applicant: Intel Corporation

Inventor： Debendra Mallik ,  Ram S. Viswanath ,  Sriram Srinivasan ,  Mark T. Bohr ,  Andrew W. Yeoh ,  Sairam Agraharam

IPC: H01L23/48 ,  H01L23/498 ,  H01L23/13 ,  H01L25/065

CPC classification number: H01L23/49838 ,  H01L23/13 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49833 ,  H01L25/0652 ,  H01L25/0657 ,  H01L2224/1403 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2924/1461 ,  H01L2924/15151 ,  H01L2924/15311 ,  H01L2924/00

Abstract: 3D integrated circuit packages with window interposers and methods to form such semiconductor packages are described. For example, a semiconductor package includes a substrate. A top semiconductor die is disposed above the substrate. An interposer having a window is disposed between and interconnected to the substrate and the top semiconductor die. A bottom semiconductor die is disposed in the window of the interposer and interconnected to the top semiconductor die. In another example, a semiconductor package includes a substrate. A top semiconductor die is disposed above the substrate. An interposer is disposed between and interconnected to the substrate and the top semiconductor die. A bottom semiconductor die is disposed in a same plane as the interposer and interconnected to the top semiconductor die.

公开(公告)号：US20150108204A1

公开(公告)日：2015-04-23

申请号：US14581985

申请日：2014-12-23

Applicant: INTEL CORPORATION

Inventor： Tieyu Zheng ,  Sumit Kumar ,  Sridhar Nara ,  Renee D. Garcia ,  Manohar S. Konchady ,  Suresh B. Yeruva ,  Lynn H. Chen ,  Tyler N. Osborn ,  Sairam Agraharam

IPC: H01L23/00

CPC classification number: H01L24/81 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49894 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L2224/0603 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/1413 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/1703 ,  H01L2224/17051 ,  H01L2224/81193 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/2064 ,  H01L2924/20643 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/014

Abstract: An integrated circuit (IC) package stack with a first and second substrate interconnected by solder further includes solder resist openings (SRO) of mixed lateral dimension are spatially varied across an area of the substrates. In embodiments, SRO dimension is varied between at least two different diameters as a function of an estimated gap between the substrates that is dependent on location within the substrate area. In embodiments where deflection in at least one substrate reduces conformality between the substrates, a varying solder joint height is provided from a fixed volume of solder by reducing the lateral dimensioning of the SRO in regions of larger gap relative to SRO dimensions in regions of smaller gap. In embodiments, the first substrate may be any of an IC chip, package substrate, or interposer while the second substrate may be any of another IC chip, package substrate, interposer, or printed circuit board (PCB).

Abstract translation: 具有通过焊料互连的第一和第二衬底的集成电路（IC）封装堆栈还包括混合侧向尺寸的阻焊剂开口（SRO）在衬底的一个区域上空间变化。 在实施例中，SRO尺寸在至少两个不同直径之间变化，作为取决于衬底区域内的位置的衬底之间的估计间隙的函数。 在至少一个衬底中的偏转减小衬底之间的共形性的实施例中，通过在较小间隙的区域中相对于SRO尺寸的较大间隙的区域中减小SRO的横向尺寸，从固定体积的焊料提供变化的焊点高度 。 在实施例中，第一基板可以是IC芯片，封装基板或插入件中的任何一个，而第二基板可以是另一个IC芯片，封装基板，插入件或印刷电路板（PCB）中的任何一个。

公开(公告)号：US20240222301A1

公开(公告)日：2024-07-04

申请号：US18147497

申请日：2022-12-28

Applicant: Intel Corporation

Inventor： Bohan Shan ,  Hongxia Feng ,  Haobo Chen ,  Srinivas Pietambaram ,  Bai Nie ,  Gang Duan ,  Kyle Arrington ,  Ziyin Lin ,  Yiqun Bai ,  Xiaoying Guo ,  Dingying Xu ,  Sairam Agraharam ,  Ashay Dani ,  Eric J. M. Moret ,  Tarek Ibrahim

IPC: H01L23/00

CPC classification number: H01L24/11 ,  H01L2224/10122 ,  H01L2224/11011 ,  H01L2924/143 ,  H01L2924/186

Abstract: Methods and apparatus for optical thermal treatment in semiconductor packages are disclosed. A disclosed example integrated circuit (IC) package includes a dielectric substrate, an interconnect associated with the dielectric substrate, and light absorption material proximate or surrounding the interconnect, the light absorption material to increase in temperature in response to being exposed to a pulsed light for thermal treatment corresponding to the IC package.

公开(公告)号：US20240222283A1

公开(公告)日：2024-07-04

申请号：US18147487

申请日：2022-12-28

Applicant: Intel Corporation

Inventor： Hongxia Feng ,  Bohan Shan ,  Bai Nie ,  Xiaoxuan Sun ,  Holly Sawyer ,  Tarek Ibrahim ,  Adwait Telang ,  Dingying Xu ,  Leonel Arana ,  Xiaoying Guo ,  Ashay Dani ,  Sairam Agraharam ,  Haobo Chen ,  Srinivas Pietambaram ,  Gang Duan

IPC: H01L23/538 ,  H01L23/00 ,  H01L23/498 ,  H01L25/065

CPC classification number: H01L23/5386 ,  H01L23/49816 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/16227 ,  H01L2924/15311

Abstract: Methods and apparatus to prevent over-etch in semiconductor packages are disclosed. A disclosed example semiconductor package includes at least one dielectric layer, an interconnect extending at least partially through or from the at least one dielectric layer, and a material on at least a portion of the interconnect, wherein the material comprises at least one of silicon or titanium.

公开(公告)号：US11626372B2

公开(公告)日：2023-04-11

申请号：US17143142

申请日：2021-01-06

Applicant: Intel Corporation

Inventor： Dae-Woo Kim ,  Sujit Sharan ,  Sairam Agraharam

IPC: H01L23/538 ,  H01L23/58 ,  H01L23/498 ,  H01L23/544 ,  H01L21/66 ,  H01L23/00 ,  G01R31/27 ,  H01L23/522 ,  H01L25/065 ,  H01L25/18

Abstract: Metal-free frame designs for silicon bridges for semiconductor packages and the resulting silicon bridges and semiconductor packages are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon, the substrate having a perimeter. A metallization structure is disposed on the insulating layer, the metallization structure including conductive routing disposed in a dielectric material stack. A first metal guard ring is disposed in the dielectric material stack and surrounds the conductive routing. A second metal guard ring is disposed in the dielectric material stack and surrounds the first metal guard ring. A metal-free region of the dielectric material stack surrounds the second metal guard ring. The metal-free region is disposed adjacent to the second metal guard ring and adjacent to the perimeter of the substrate.

公开(公告)号：US20220199480A1

公开(公告)日：2022-06-23

申请号：US17129135

申请日：2020-12-21

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Xiaoxuan Sun ,  Nitin A. Deshpande ,  Sairam Agraharam

IPC: H01L23/31 ,  H01L23/538 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18

Abstract: Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.