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    Memory system
    25.
    发明授权
    Memory system 有权

    公开(公告)号：US11442808B2

    公开(公告)日：2022-09-13

    申请号：US17198451

    申请日：2021-03-11

    Applicant: Kioxia Corporation

    Inventor： Takehiko Amaki ,  Toshikatsu Hida ,  Shunichi Igahara ,  Yoshihisa Kojima ,  Suguru Nishikawa

    IPC: G11C29/00 ,  G06F11/10 ,  G06F12/0891 ,  G06F12/02 ,  G06F11/07

    Abstract: According to one embodiment, a memory system includes a nonvolatile memory, a random access memory and a controller. When writing n−1 data portions of a first unit that are included in n−1 error correction code frames of a first size, respectively, in the nonvolatile memory, the controller generates a second error correction code that constitutes an error correction code frame of a second size together with the n−1 data portions of the first unit and a second data portion to be written into the nonvolatile memory by encoding the n−1 data portions of the first unit and the second data portion, and writes the second data portion and the second error correction code into the nonvolatile memory.

    Memory system including non-volatile buffer and control method thereof
    26.
    发明授权
    Memory system including non-volatile buffer and control method thereof 有权

    公开(公告)号：US11436136B2

    公开(公告)日：2022-09-06

    申请号：US16807275

    申请日：2020-03-03

    Applicant: Kioxia Corporation

    Inventor： Takehiko Amaki ,  Toshikatsu Hida ,  Shunichi Igahara ,  Yoshihisa Kojima ,  Suguru Nishikawa

    IPC: G06F12/02 ,  G06F3/06

    Abstract: According to one embodiment, a memory system includes a non-volatile memory including first and second block groups, and a controller that performs a first write operation for the first block group and the first or a second write operation for the second block group. A first or second number of bits is written into a memory cell in the first or the second write operation. The second number of bits is larger than the first number of bits. The controller allocates a block to a buffer as a write destination block in the first write operation based on a degree of wear-out of at least one block, and writes data from an external device into the buffer in the first write operation.

    Memory system
    29.
    发明授权
    Memory system 有权

    公开(公告)号：US11874738B2

    公开(公告)日：2024-01-16

    申请号：US18086206

    申请日：2022-12-21

    Applicant: KIOXIA CORPORATION

    Inventor： Noboru Okamoto ,  Toshikatsu Hida

    IPC: G06F11/10 ,  G11C16/26 ,  G11C16/20 ,  G11C16/04

    CPC classification number: G06F11/1068 ,  G11C16/0483 ,  G11C16/20 ,  G11C16/26

    Abstract: A memory system connectable to a host, includes a non-volatile memory including a plurality of memory cell transistors and a controller configured to execute read operations on the non-volatile memory. The controller executes one or more first read operations on the non-volatile memory to obtain read data using read voltages that are determined from one of a plurality of entries stored in a shift table, and performs error correction on the read data, until the error correction is successful, and when the error correction on the read data is successful, records an index corresponding to the entry stored in the shift table that was used in obtaining the successfully error-corrected read data. The controller executes a second read operation on the non-volatile memory to obtain read data using read voltages that are determined from the entry stored in the shift table corresponding to the recorded index.

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