摘要:
A packaged semiconductor device includes trapezoidal power leads and an earth lead in a resin package. The power and earth leads have a large area, radiate heat, and reduce inductance, improving the electrical characteristics of the packaged semiconductor device.
摘要:
A semiconductor device comprises a die pad having first and second surfaces; a semiconductor chip having a plurality of electrodes and mounted on the first surface of the die pad; a radiator attached by caulking to the second surface of the die pad; a plurality of leads each of which has one end electrically connected to a corresponding electrode of the chip; and a resin package in which the die pad, the semiconductor chip, the radiator and the ends of the leads are molded. This semiconductor device exhibits excellent thermal radiator properties.
摘要:
A lead frame comprises a plurality of frame assemblies. Each framework assembly includes a framework, a suspension lead, a die pad, a plurality of inner leads and outer leads, a first tie bar and a second tie bar, and a lead support. The plurality of framework assemblies are disposed alongside of one another in a direction perpendicular to a direction in which the plurality of outer leads extend. A distance between close-set outer leads in each two neighboring frameworks is substantially n times a pitch of the plurality of outer leads in each framework, wherein n is an integer.
摘要:
In order to reduce the thickness of a semiconductor device and double its capacity, two center pad semiconductor chips stacked one on the other, back to back, are fixed to one face of a wiring substrate. The difference in the length of routing between external lands and fingers is minimized, and each of the center pads and corresponding fingers are connected via metal wires having a high conductivity. The main face of a first center pad semiconductor chip is fixed to the wiring substrate that has first and second wired faces and a through opening. The back face of the first semiconductor chip and the back face of a second semiconductor chip are fixed to each other using a bonding material. The pads on each semiconductor chip are connected to corresponding fingers on the wiring substrate via metal wires. One face of the wiring substrate is sealed with a sealing resin, and on the other face, an area in the vicinity of the through opening is sealed.
摘要:
A method of manufacturing inversion ICs includes the steps of connecting a first electrode pad group of a semiconductor chip to a second lead group via wires, connecting a second electrode pad group of the semiconductor chip to a first lead group via wires, sealing the semiconductor chip, the first and second lead groups, and the wires in a resin so that the outer lead portions of the leads are exposed, and bending the outer lead portions of the leads toward the bottom surface of the semiconductor chip. An IC module includes a mounting substrate, a standard IC mounted on the top surface of the mounting substrate, an inversion IC mounted on the bottom surface of the mounting substrate so that the leads providing connections to the same functions in the standard and inversion ICs are at the same point on opposite sides of the mounting substrate, and a plurality of connecting members on the mounting substrate, electrically connecting the opposed leads of the standard IC and the leads of the inversion IC together.
摘要:
In a method of manufacturing a semiconductor device, overlaid on a first lead frame including a die pad supported by a plurality of die pad suspending leads is a second lead frame having connecting leads wherein the first and second lead frames are disposed on a first molding die such that the die pad and inner lead portions of the inner leads of the second lead frame are accommodated within a first cavity of the first molding die while offset portions of the die pad suspending leads are disposed outside of the first cavity. A second molding die is clamped onto the first molding die to define a resin molding chamber which is then filled with a molten resin to form a package. After removing the package from the first and second molding dies, the offset portions are cut away from the package while cutting the connecting leads to a predetermined length. A semiconductor chip as large as permissible can be embedded within a semiconductor device of a standard size while ensuring high quality and improved reliability of the semiconductor device.
摘要:
A semiconductor device of the present invention accommodates a large semiconductor chip in a downsized package without impairing its reliability. The semiconductor chip is bonded on a relatively small die pad. Common inner leads and a plurality of inner leads are disposed opposite and spaced from the semiconductor chip by a gap ranging from 0.1 mm to 0.4 mm and the gap between the semiconductor chip and the common inner leads and the plurality of inner leads is filled with a resin which forms part of a resin package.
摘要:
A method of manufacturing inversion ICs includes the steps of connecting a first electrode pad group of a semiconductor chip to a second lead group via wires, connecting a second electrode pad group of the semiconductor chip to a first lead group via wires, sealing the semiconductor chip, the first and second lead groups, and the wires in a resin so that the outer lead portions of the leads are exposed, and bending the outer lead portions of the leads toward the bottom surface of the semiconductor chip. An IC module includes a mounting substrate, a standard IC mounted on the top surface of the mounting substrate, an inversion IC mounted on the bottom surface of the mounting substrate so that the leads providing connections to the same functions in the standard and inversion ICs are at the same point on opposite sides of the mounting substrate, and a plurality of connecting members on the mounting substrate, electrically connecting the opposed leads of the standard IC and the leads of the inversion IC together.
摘要:
A semiconductor device includes an insulating substrate; a semiconductor chip on which plural electrodes including at least one ground electrode and at least one power source electrode are disposed; plural leads supported by an obverse surface of the insulating substrate, the plural leads being connected to corresponding electrodes on the semiconductor chip; at least one grounding conductor plate on a reverse surface of the insulating substrate; and at least one power source conductor plate on the reverse surface of the insulating substrate. This semiconductor device includes grounding contact holes for electrically connecting the grounding conductor plate to a ground lead coupled to the ground electrode on the semiconductor chip; power source contact holes for electrically connecting the power source conductor plate to a power source lead coupled to the power source electrode on the semiconductor chip; and a package body encapsulating the semiconductor chip and an end of each of the leads so that the other end of each of the leads is exposed outside the package body.