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    OPTOELECTRONIC SEMICONDUCTOR COMPONENT HAVING AN ELECTRICALLY INSULATING ELEMENT
    21.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR COMPONENT HAVING AN ELECTRICALLY INSULATING ELEMENT 有权
    具有电绝缘元件的光电子半导体元件

    公开(公告)号：US20150235919A1

    公开(公告)日：2015-08-20

    申请号：US14413748

    申请日：2013-07-16

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Matthias Sabathil ,  Stefan Illek ,  Thomas Schwarz

    IPC: H01L23/373 ,  H01L31/024 ,  H01L33/64

    CPC classification number: H01L23/3731 ,  H01L31/024 ,  H01L33/56 ,  H01L33/62 ,  H01L33/641 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2924/181 ,  H01L2933/0075 ,  H01L2924/00014 ,  H01L2924/00012

    Abstract: Disclosed is a non-transitory computer-readable storage medium that stores a game program that processes progress of a game using a plurality of game mediums, the game program causing a computer to execute: moving each of the game mediums along a predetermined path in a game field including a plurality of regions; first displaying a selection object capable of selecting at least one of the plurality of regions so that the selection object is fired according to an operation detected by a predetermined input unit; and changing, when one of the plurality of regions is selected by the selection object, an attribute set in the region to change the predetermined path where the game medium moves.

    Abstract translation: 公开了一种非暂时性计算机可读存储介质，其存储使用多个游戏介质处理游戏进程的游戏程序，所述游戏程序使得计算机执行：沿着预定路径移动每个游戏介质 游戏场包括多个区域; 首先显示能够选择多个区域中的至少一个的选择对象，使得根据由预定输入单元检测到的操作来触发选择对象; 以及当所述选择对象选择所述多个区域中的一个区域时，改变所述区域中设置的属性，以改变所述游戏介质移动的预定路径。

    Optoelectronic component, semiconductor structure and method
    23.
    发明授权
    Optoelectronic component, semiconductor structure and method 有权

    公开(公告)号：US12294039B2

    公开(公告)日：2025-05-06

    申请号：US17753957

    申请日：2020-03-26

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Andreas Biebersdorf ,  Stefan Illek ,  Felix Feix ,  Christoph Klemp ,  Ines Pietzonka ,  Petrus Sundgren ,  Christian Berger ,  Ana Kanevce

    IPC: H01L33/06 ,  H01L33/00 ,  H01L33/30

    Abstract: A semiconductor structure comprises an n-doped first layer, a p-doped second layer doped with a first dopant, and an active layer disposed between the n-doped first layer and the p-doped second layer and having at least one quantum well. The active layer of the semiconductor structure is divided into a plurality of first optically active regions, at least one second region, and at least one third region. Here, the plurality of first optically active regions are arranged in a hexagonal pattern spaced apart from each other. The at least one quantum well in the active region comprises a larger band gap in the at least one second region than in the plurality of first optically active regions and the at least one third region, the band gap being modified, in particular, by quantum well intermixing. The at least one second region encloses the plurality of first optically active regions.

    Light Source
    25.
    发明申请
    Light Source 审中-公开

    公开(公告)号：US20190051788A1

    公开(公告)日：2019-02-14

    申请号：US16079020

    申请日：2017-05-29

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Frank Singer ,  Alexander Linkov ,  Stefan Illek ,  Rainer Butendeich ,  Christoph Koller ,  Thomas Schwarz

    IPC: H01L31/167 ,  H01L25/13 ,  H01L31/0232 ,  H01L31/02 ,  H01L25/16

    Abstract: A light source is disclosed. In an embodiment a light source includes at least one first semiconductor emitter for generating first light, at least one second semiconductor emitter for generating second light, the second light having a different color than the first light, a light mixing body configured to produce a mixed light from the first and second lights and a detector on the light mixing body, the detector configured to determine a color locus of the mixed light, wherein the first and second semiconductor emitters are arranged along a line and have different distances from the detector, wherein the light mixing body is arranged on side surfaces of the first and second semiconductor emitters and in projection onto the side surfaces at least partially covers each of the side surfaces, so that the detector receives light from each of the first and second semiconductor emitters through the light mixing body.

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