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公开(公告)号：US07598927B2
公开(公告)日：2009-10-06
申请号：US10918402
申请日：2004-08-16
申请人： Shunpei Yamazaki , Jun Koyama , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hideaki Kuwabara
CPC分类号： G02B27/01 , B60K28/06 , B60W30/095 , B60W40/02 , B60W40/08 , B60W50/14 , B60W2540/22 , B60W2550/402 , G01C21/365 , G02B5/30 , G02B27/017 , G02B27/0172 , H01L27/3244 , H01L51/5281 , H01L2251/5323
摘要： It is an object to provide a driving support system and a display device suitable for the driving support system. According to the driving support system, change in driver's mental and physical conditions can be caught instantaneously and a warning light emission display is given within the forward sight of the driver in order to call the driver's attention. A light emitting device of the driving support system can display a far side of the display. A display may be switched between a transmission mode and a non-transmission mode by adjusting a movable polarizer.
摘要翻译： 本发明的目的是提供一种适于驾驶支持系统的驾驶支持系统和显示装置。 根据驾驶辅助系统，驾驶员的身体和身体状况的改变可以立即被抓住，并在司机的前方看到警告发光显示，以引起驾驶员的注意。 驱动支撑系统的发光装置可以显示显示器的远侧。 可以通过调节可动偏振器在显示器在传输模式和非传输模式之间切换。
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公开(公告)号：US20090134399A1
公开(公告)日：2009-05-28
申请号：US12331679
申请日：2008-12-10
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3248 , H01L51/0011 , H01L51/5052 , H01L51/5206 , H01L51/5209 , H01L51/5218 , H01L51/56 , H01L2251/5315
摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.
摘要翻译： 将提供一种有源矩阵发光器件的制造方法，其中有源矩阵发光器件可以在较短的时间内以较低的成本与常规的低成本制造。 本发明的特征在于，与配置在有源矩阵型发光元件的像素区域中的每个TFT的半导体层接触或电连接的金属电极采用分层结构。 此外，金属电极被部分蚀刻并用作发光元件的第一电极。 缓冲层，含有有机化合物的层和第二电极层层叠在第一电极上。
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公开(公告)号：US20090026464A1
公开(公告)日：2009-01-29
申请号：US12232310
申请日：2008-09-15
IPC分类号： H01L33/00
CPC分类号： H01L27/1222 , G02F1/133345 , G02F1/1339 , G02F1/134309 , G02F1/13439 , G02F1/13452 , G02F1/13458 , G02F1/136204 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2001/136231 , G02F2001/136295 , G02F2201/123 , G02F2202/103 , G02F2202/105 , G02F2202/28 , H01L21/67161 , H01L21/67167 , H01L21/67207 , H01L21/67225 , H01L21/67236 , H01L27/1218 , H01L27/124 , H01L27/1244 , H01L27/1255 , H01L27/1288 , H01L29/66765 , H01L29/78669
摘要： A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high.[Solving Means]By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.
摘要翻译： 在传统的液晶显示装置中使用至少五个光掩模制造TFT，因此制造成本高。 [解决方案]通过在三个光刻步骤中使用三个光掩模来执行像素电极127，源极区域123和漏极区域124的形成，制备具有反向交错型n型的像素TFT部分的液晶显示装置 通道TFT和存储电容器。
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公开(公告)号：US20090001375A1
公开(公告)日：2009-01-01
申请号：US12213733
申请日：2008-06-24
IPC分类号： H01L29/04
CPC分类号： H01L29/78696 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765
摘要： In a light-emitting device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
摘要翻译： 在具有反交错薄膜晶体管的发光器件中，反交错薄膜晶体管形成如下：在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成用作沟道形成区的微晶半导体膜; 在微晶半导体膜上形成缓冲层; 在缓冲层上形成一对源区和漏区; 并且形成与源区和漏区接触的一对源电极和漏电极，以便露出源区和漏区的一部分。
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公开(公告)号：US20080106656A1
公开(公告)日：2008-05-08
申请号：US11958774
申请日：2007-12-18
IPC分类号： G02F1/133
CPC分类号： G02F1/134363 , G02F1/136286 , G02F2001/136295
摘要： In a liquid crystal display device, gate lines and common lines are first concurrently formed, and after an interlayer film is formed, a pixel electrode, common electrodes, and source lines are formed at the same time. By this, a electrode pattern can be made simple and manufacturing steps are simplified. Further, wiring lines and electrode disposed in the layer closest to a liquid crystal layer are made the pixel electrode, common electrodes and source lines, and the shapes thereof are made simple.
摘要翻译： 在液晶显示装置中，首先同时形成栅极线和公共线，并且在形成层间膜之后，同时形成像素电极，公共电极和源极线。 由此，可以使电极图案简单，并且简化制造步骤。 此外，布置在最靠近液晶层的层中的布线和电极被制成像素电极，公共电极和源极线，并且其形状变得简单。
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公开(公告)号：US07317205B2
公开(公告)日：2008-01-08
申请号：US10238050
申请日：2002-09-10
申请人： Shunpei Yamazaki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Hideaki Kuwabara
IPC分类号： H01L29/94
CPC分类号： H01L21/02691 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L27/3262 , H01L29/12 , H01L29/6675 , H01L29/78645 , H01L29/78648
摘要： Semiconductor layers for serving as active layers of a plurality of thin film transistors in a pixel are arranged in the same direction and irradiated with laser light with the scanning direction matched to the channel length direction of the semiconductor layers. It is possible to coincide the crystal growth direction with the carrier moving direction, and high field effect mobility can be obtained. Also, semiconductor layers for serving as active layers of a plurality of thin film transistors in a driving circuit and in a CPU are arranged in the same direction, and are irradiated with laser light with the scanning direction matched to the channel length direction of the semiconductor layers.
摘要翻译： 用于像素中的多个薄膜晶体管的有源层的半导体层以相同的方向布置，并且以与半导体层的沟道长度方向匹配的扫描方向的激光照射。 可以使晶体生长方向与载流子移动方向一致，可以获得高场效应迁移率。 此外，用于驱动电路和CPU中的多个薄膜晶体管的有源层的半导体层被布置在相同的方向上，并且以与半导体的沟道长度方向匹配的扫描方向的激光照射 层。
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公开(公告)号：US07303942B2
公开(公告)日：2007-12-04
申请号：US10735767
申请日：2003-12-16
申请人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
发明人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
IPC分类号： H01L21/44
CPC分类号： H01L21/6835 , H01L21/563 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/83 , H01L29/0657 , H01L29/66757 , H01L29/78675 , H01L2221/68359 , H01L2221/68368 , H01L2224/0401 , H01L2224/04026 , H01L2224/13111 , H01L2224/13144 , H01L2224/16225 , H01L2224/274 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/12042 , H01L2924/14 , H01L2924/1517 , H01L2924/15311 , H01L2924/1579 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2924/01014 , H01L2924/3512 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
摘要： It is an object of the present invention to provide a technique for making a semiconductor device thinner without using a back-grinding method for a silicon wafer. According to the present invention, an integrated circuit film is mounted, thereby making a semiconductor device mounting the integrated circuit film thinner. The term “an integrated circuit film” means a film-like integrated circuit which is manufactured based on an integrated circuit manufactured by a semiconductor film formed over a substrate such as a glass substrate or a quartz substrate. In the present invention, the integrated circuit film is manufactured by a technique for transferring.
摘要翻译： 本发明的目的是提供一种使半导体器件更薄而不使用用于硅晶片的后磨法的技术。 根据本发明，安装集成电路膜，从而使得安装集成电路膜的半导体器件更薄。 术语“集成电路膜”是指基于由诸如玻璃基板或石英基板的基板上形成的半导体膜制成的集成电路制造的膜状集成电路。 在本发明中，通过转印技术制造集成电路膜。
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公开(公告)号：US07265391B2
公开(公告)日：2007-09-04
申请号：US10918419
申请日：2004-08-16
IPC分类号： H01L33/00
CPC分类号： H01L27/3248 , H01L27/3211 , H01L27/3216 , H01L27/322 , H01L27/3246 , H01L27/3272 , H01L27/3276 , H01L27/3279 , H01L51/5212 , H01L51/5228 , H01L51/5253 , H01L2251/5315 , Y10S257/929
摘要： To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator (24) provided between pixel electrodes, an auxiliary electrode (21) made of a metal film is formed, whereby a conductive layer (20) made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode (21) is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film (32) made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.
摘要翻译： 通过大屏幕提供具有高清晰度的像素部分的可靠性高的发光装置。 根据本发明的发光器件，在设置在像素电极之间的绝缘体（24）上形成由金属膜构成的辅助电极（21），由此形成由透明导电膜形成的导电层（20） 与辅助电极接触可以使电阻较小，薄。 此外，辅助电极（21）用于实现与下层电极的连接，由此可以用形成在EL层上的透明导电膜将电极引出。 此外，形成由层压的含有氢的膜和氮化硅膜构成的保护膜（32），由此可以实现高可靠性。
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公开(公告)号：US20070167023A1
公开(公告)日：2007-07-19
申请号：US11715468
申请日：2007-03-08
申请人： Shunpei Yamazaki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Hideaki Kuwabara
IPC分类号： C23F1/00 , H01L21/302 , H01L21/461
CPC分类号： H01L21/32139 , C23C16/45589 , C23C16/509 , C23C16/54 , H01J2237/3342 , H01L21/2855 , H01L21/28562 , H01L21/312 , H01L21/76802 , H01L21/76838 , H01L27/124 , H01L27/1288 , H01L27/3246 , H01L51/0017 , H01L51/0022 , H01L51/5206 , H01L51/56
摘要： In the case in which a film for a resist is formed by spin coating, there is a resist material to be wasted, and the process of edge cleaning is added as required. Further, when a thin film is formed on a substrate using a vacuum apparatus, a special apparatus or equipment to evacuate the inside of a chamber vacuum is necessary, which increases manufacturing cost. The invention is characterized by including: a step of forming conductive layers on a substrate having a dielectric surface in a selective manner with a CVD method, an evaporation method, or a sputtering method; a step of discharging a compound to form resist masks so as to come into contact with the conductive layer; a step of etching the conductive layers with plasma generating means using the resist masks under the atmospheric pressure or a pressure close to the atmospheric pressure; and a step of ashing the resist masks with the plasma generating means under the atmospheric pressure or a pressure close to the atmospheric pressure. With the above-mentioned characteristics, efficiency in use of a material is improved, and a reduction in manufacturing cost is realized.
摘要翻译： 在通过旋涂形成抗蚀剂用膜的情况下，存在要浪费的抗蚀剂材料，根据需要添加边缘清洁处理。 此外，当使用真空装置在基板上形成薄膜时，需要用于抽真空室内的专用装置或设备，这增加了制造成本。 本发明的特征在于包括：通过CVD法，蒸发法或溅射法以选择性方式在具有电介质表面的基板上形成导电层的步骤; 将化合物排出以形成抗蚀剂掩模以与导电层接触的步骤; 在大气压或接近大气压的压力下使用抗蚀剂掩模的等离子体发生装置蚀刻导电层的步骤; 以及在大气压或接近大气压的压力下用等离子体产生装置对抗蚀剂掩模进行灰化的步骤。 利用上述特征，提高了材料的使用效率，实现了制造成本的降低。
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公开(公告)号：US20070114921A1
公开(公告)日：2007-05-24
申请号：US11623618
申请日：2007-01-16
CPC分类号： H01L27/3248 , H01L27/3211 , H01L27/3216 , H01L27/322 , H01L27/3246 , H01L27/3272 , H01L27/3276 , H01L27/3279 , H01L51/5212 , H01L51/5228 , H01L51/5253 , H01L2251/5315 , Y10S257/929
摘要： To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator (24) provided between pixel electrodes, an auxiliary electrode (21) made of a metal film is formed, whereby a conductive layer (20) made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode (21) is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film (32) made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.
摘要翻译： 通过大屏幕提供具有高清晰度的像素部分的可靠性高的发光装置。 根据本发明的发光器件，在设置在像素电极之间的绝缘体（24）上形成由金属膜构成的辅助电极（21），由此形成由透明导电膜形成的导电层（20） 与辅助电极接触可以使电阻较小，薄。 此外，辅助电极（21）用于实现与下层电极的连接，由此可以用形成在EL层上的透明导电膜将电极引出。 此外，形成由层压的含有氢的膜和氮化硅膜构成的保护膜（32），由此可以实现高可靠性。
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