-
21.发明授权
公开(公告)号：US6121340A
公开(公告)日：2000-09-19
申请号：US964080
申请日：1997-11-04
CPC分类号： G03F7/0388 , C08G61/08 , G03F7/039 , G03F7/0758 , G03F7/0045
摘要： The present invention relates to a photodefinable dielectric composition comprising a photoinitiator and a polycyclic addition polymer comprising polycyclic repeating units that contain pendant silyl functionalities containing hydrolyzable substituents. Upon exposure to a radiation source the photoinitiator catalyzes the hydrolysis of the hydrolyzable groups to effect the cure of the polymer and adhesion of the polymer to desired substrates.
摘要翻译： 本发明涉及包含光引发剂和包含多环重复单元的多环加成聚合物的光可定义电介质组合物，所述多环重复单元含有含有可水解取代基的侧链甲硅烷基官能团。 在暴露于辐射源时，光引发剂催化可水解基团的水解以实现聚合物的固化和聚合物粘合到所需的基材上。
-
22.发明授权
公开(公告)号：US6031058A
公开(公告)日：2000-02-29
申请号：US263930
申请日：1999-03-08
CPC分类号： C08F32/08
摘要： Silyl substituted polymers of polycycloolefins are provided as well as catalyst systems for their preparation. The polymers of the invention include polycyclic repeat units that contain pendant silyl functional groups represented by the following formulae: ##STR1## wherein A is a divalent radical selected from the following structures: ##STR2## R.sup.9 independently represents hydrogen, methyl, or ethyl; R.sup.10, R.sup.11, and R.sup.12 independently represent halogen, linear or branched (C.sub.1 to C.sub.20) alkyl, linear or branched (C.sub.1 to C.sub.20) alkoxy, linear or branched (C.sub.1 to C.sub.20) alkyl carbonyloxy, (C.sub.1 to C.sub.20) alkyl peroxy, and substituted or unsubstituted (C.sub.6 to C.sub.20) aryloxy; R.sup.10, R.sup.11, and R.sup.12 together with the silicon atom to which they are attached form the group: ##STR3## n is a number from 0 to 5; and n' is 0 or 1; and n" is a number from 0 to 10.
摘要翻译： 提供聚环烯烃的甲硅烷基取代聚合物以及用于其制备的催化剂体系。 本发明的聚合物包括含有由下式表示的侧链甲硅烷基官能团的多环重复单元：其中A是选自以下结构的二价基团：R9独立地表示氢，甲基或乙基; R10，R11和R12独立地表示直链或支链（C1至C20）烷基，直链或支链（C1至C20）烷氧基，直链或支链（C1至C20）烷基羰基氧基，（C1至C20）烷基过氧基），和 取代或未取代的（C6〜C20）芳氧基; R 10，R 11和R 12与它们所连接的硅原子一起形成基团：n为0至5的数; 并且n'为0或1; n“是从0到10的数字。
-
公开(公告)号：US5912313A
公开(公告)日：1999-06-15
申请号：US562345
申请日：1995-11-22
IPC分类号： C08F4/605 , C08F4/606 , C08F32/08 , C08F232/08 , C08F230/08
CPC分类号： C08F32/08
摘要： Silyl substituted polymers of polycycloolefins are provided as well as catalyst systems for their preparation. The polymers of the invention include polycyclic repeat units that contain pendant silyl functional groups represented by the following formulae: ##STR1## wherein A is a divalent radical selected from the following structures: ##STR2## R.sup.9 independently represents hydrogen, methyl, or ethyl; R.sup.10, R.sup.11, and R.sup.12 independently represent halogen, linear or branched (C.sub.1 to C.sub.20) alkyl, linear or branched (C.sub.1 to C.sub.20) alkoxy, linear or branched (C.sub.1 to C.sub.20) alkyl carbonyloxy, (C.sub.1 to C.sub.20) alkyl peroxy, and substituted or unsubstituted (C.sub.6 to C.sub.20) aryloxy; R.sup.10, R.sup.11, and R.sup.12 together with the silicon atom to which they are attached form the group: ##STR3## n is a number from 0 to 5; and n' is 0 or 1; and n" is a number from 0 to 10.
-
公开(公告)号：US09349698B2
公开(公告)日：2016-05-24
申请号：US13534565
申请日：2012-06-27
CPC分类号： H01L24/05 , H01L23/3157 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/14 , H01L2224/02126 , H01L2224/0384 , H01L2224/03845 , H01L2224/0391 , H01L2224/0401 , H01L2224/05025 , H01L2224/05147 , H01L2224/05567 , H01L2224/05571 , H01L2224/05647 , H01L2224/1132 , H01L2224/1147 , H01L2224/11474 , H01L2224/1148 , H01L2224/11849 , H01L2224/13007 , H01L2224/13026 , H01L2924/00014 , H01L2924/351 , H01L2924/00012 , H01L2224/05552
摘要： This disclosure relates generally to a wafer having a plurality of semiconductor chips having a major surface, a metal contact positioned on one of the plurality of semiconductor chips and having a side surface and contact surface, the contact surface substantially parallel to the major surface, wherein the contact surface defines a thickness of the metal contact relative to the major surface, an underfill layer abutting the one of the plurality of semiconductor chips and the side surface of the metal contact, the underfill layer having a top surface substantially parallel to the major surface, wherein the top surface of the underfill layer defines a thickness of the underfill layer relative to the major surface, the thickness of the underfill layer being not greater than the thickness of the metal contact, and a solder bump formed in electrical contact with the contact surface of the metal contact.
摘要翻译： 本公开总体上涉及具有多个具有主表面的半导体芯片的晶片，位于多个半导体芯片之一上的金属触点，并且具有侧表面和接触表面，该接触表面基本上平行于主表面，其中 所述接触表面限定所述金属接触件相对于所述主表面的厚度，底部填充层邻接所述多个半导体芯片中的一个和所述金属接触件的侧表面，所述底部填充层具有基本上平行于所述主表面的顶表面 其中所述底部填充层的顶表面相对于所述主表面限定所述底部填充层的厚度，所述底部填充层的厚度不大于所述金属接触件的厚度，以及形成为与所述触点电接触的焊料凸块 表面的金属接触。
-
公开(公告)号：US07521115B2
公开(公告)日：2009-04-21
申请号：US10321060
申请日：2002-12-17
IPC分类号： B32B9/00
CPC分类号： C08L101/12 , B29C39/026 , B29C70/58 , B29C70/882 , B29L2031/3406 , C08J5/10 , H01L24/10 , H01L24/13 , H01L2224/13 , H01L2224/13099 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01082 , H01L2924/14 , H01L2924/30107 , H05K3/321 , H05K2201/0367 , H05K2201/10674 , H05K2201/10719 , Y10T428/24917 , Y10T428/25 , Y10T428/31681 , H01L2924/00 , H01L2224/0401
摘要： A method for low temperature bumping is disclosed. A resin capable of being cross-linked by free-radical or cationic polymerization at low temperature is provided. Electrically conductive particles are then added to the resin to form a mixture. The mixture is then activated by heat or exposure to light to polymerize the mixture. In an alternative embodiment, a vinyl ether resin is used, to which electrically conductive particles are added. The mixture is polymerized by exposure to light.
摘要翻译： 公开了一种低温碰撞的方法。 提供能够在低温下通过自由基或阳离子聚合交联的树脂。 然后将导电颗粒加入到树脂中以形成混合物。 然后通过加热或暴露于光使混合物活化，以使混合物聚合。 在替代实施方案中，使用乙烯基醚树脂，其中加入导电颗粒。 混合物通过曝光聚合。
-
公开(公告)号：US07387841B2
公开(公告)日：2008-06-17
申请号：US11013626
申请日：2004-12-15
申请人： Saikumar Jayaraman
发明人： Saikumar Jayaraman
IPC分类号： B32B9/04
CPC分类号： C09D183/04 , C08K3/32 , C08K5/5419 , Y10T428/31663
摘要： The present invention describes a method including: providing a material A, the material A including a siloxane backbone with a hydride functional group; reacting the material A with a material B in the presence of a catalyst to form a material C, the material B including an alkenyl functional group and an aromatic carbonate functional group; heating the material C to form a material D, the material D including a phenol functional group; and reacting the material D with a material E and a material F to form a material G, the material E including a cyanogen halide, the material F including an acid acceptor, the material G including an aromatic cyanate ester functional group. The present invention further describes a die attach adhesive including a three-dimensional network of substituted triazine rings.
摘要翻译： 本发明描述了一种方法，包括：提供材料A，包含具有氢化物官能团的硅氧烷主链的材料A; 在催化剂存在下使材料A与材料B反应形成材料C，材料B包括链烯基官能团和芳族碳酸酯官能团; 加热材料C以形成材料D，材料D包括酚官能团; 并使材料D与材料E和材料F反应以形成材料G，所述材料E包括卤化氰，包括酸受体的材料F，所述材料G包括芳族氰酸酯官能团。 本发明进一步描述了包含取代的三嗪环的三维网络的管芯附着粘合剂。
-
27.发明授权Chip package thermal interface materials with dielectric obstructions for body-biasing, methods of using same, and systems containing same 有权具有用于体偏置的电介质障碍物的芯片封装热界面材料，其使用方法以及含有它们的体系公开(公告)号：US07332807B2
公开(公告)日：2008-02-19
申请号：US11323512
申请日：2005-12-30
CPC分类号： H01L23/3737 , H01L2224/05571 , H01L2224/05573 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/2929 , H01L2224/293 , H01L2224/29486 , H01L2224/2949 , H01L2224/29499 , H01L2224/32245 , H01L2224/73253 , H01L2924/00014 , H01L2924/01079 , H01L2924/01327 , H01L2924/15311 , H01L2924/16152 , H01L2924/00 , H01L2224/05599
摘要： A chip package includes a thermal interface material disposed between a die backside and a heat sink. The thermal interface material includes a first metal particle that is covered by a dielectric film. The dielectric film is selected from an inorganic compound of the first metal or an inorganic compound coating of a second metal. The dielectric film diminishes overall heat transfer from the first metal particle in the thermal interface material by a small fraction of total possible heat transfer without the dielectric film. A method of operating the chip includes biasing the chip with the dielectric film in place.
摘要翻译： 芯片封装包括设置在模具背面和散热器之间的热界面材料。 热界面材料包括由电介质膜覆盖的第一金属颗粒。 电介质膜选自第一金属的无机化合物或第二金属的无机化合物涂层。 电介质膜减少热界面材料中的第一金属颗粒的总传热量，而不需要电介质膜的总可能传热的一小部分。 一种操作该芯片的方法包括：将该电介质膜的芯片偏压就位。
-
28.发明申请公开(公告)号：US20070287005A1
公开(公告)日：2007-12-13
申请号：US11893420
申请日：2007-08-15
申请人： Saikumar Jayaraman , Paul Koning , Ashay Dani
发明人： Saikumar Jayaraman , Paul Koning , Ashay Dani
CPC分类号： H01L23/3737 , C08K3/08 , C08K3/22 , H01L23/4275 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2924/15311 , H01L2924/15312 , H01L2924/16152 , Y10T29/49002 , Y10T29/49083 , Y10T29/49099 , Y10T29/4913 , Y10T428/12701 , Y10T428/12896 , Y10T428/23 , Y10T428/25 , Y10T428/252 , Y10T428/2982 , H01L2924/00
摘要： A thermal interface material made with a phase change polymer and a fusible filler material.
摘要翻译： 由相变聚合物和易熔填料制成的热界面材料。
-
公开(公告)号：US20070251639A1
公开(公告)日：2007-11-01
申请号：US11825400
申请日：2007-07-06
申请人： Saikumar Jayaraman , Paul Koning , Ashay Dani
发明人： Saikumar Jayaraman , Paul Koning , Ashay Dani
IPC分类号： B29C65/02 , C09J201/00
CPC分类号： H05K13/0465 , H01L23/42 , H01L23/4275 , H01L24/29 , H01L2224/16225 , H01L2224/29109 , H01L2224/29111 , H01L2224/29298 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2224/83101 , H01L2924/0001 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01058 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/15312 , H01L2924/16152 , Y10T156/10 , Y10T428/24926 , Y10T428/25 , Y10T428/254 , Y10T428/256 , Y10T428/31917 , H01L2924/00 , H01L2924/01022 , H01L2924/01083 , H01L2224/29099 , H01L2224/0401
摘要： Embodiments of the present invention provide various polymeric matrices that may be used as a binder matrix for polymer solder hybrid thermal interface materials. In alternative embodiments the binder matrix material may be phophozene, perfluoro ether, polyether, or urethane. For one embodiment, the binder matrix is selected to provide improved adhesion to a variety of interfaces. For an alternative embodiment the binder matrix is selected to provide low contact resistance. In alternative embodiments, polymeric materials containing fusible and non-fusible particles may be used in application where heat removal is desired and is not restricted to thermal interface materials for microelectronic devices.
-
30.发明授权Stress-relief layer and stress-compensation collar in contact arrays, and processes of making same 有权接触阵列中的应力消除层和应力补偿环，以及制造相同的工艺公开(公告)号：US07244634B2
公开(公告)日：2007-07-17
申请号：US10815968
申请日：2004-03-31
申请人： Daewoong Suh , Saikumar Jayaraman , Mohd Erwan P. Bin Basiron , Sheau Hooi Lim , Yoong Tatt P. Chin
发明人： Daewoong Suh , Saikumar Jayaraman , Mohd Erwan P. Bin Basiron , Sheau Hooi Lim , Yoong Tatt P. Chin
IPC分类号： H01L21/00
CPC分类号： H05K3/3436 , H01L23/49816 , H01L23/49838 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2924/01077 , H01L2924/15311 , H05K1/0271 , H05K2201/10977 , H05K2203/0126 , H05K2203/1189 , Y02P70/613 , H01L2224/05599
摘要： A stress-relief layer is formed by dispensing a polymer upon a substrate lower surface under conditions to partially embed a solder bump that is disposed upon the lower surface. The stress-relief layer flows against the solder bump. A stress-compensation collar is formed on a board to which the substrate is mated and the SCC partially embeds the solder bump. An article that exhibits a stress-relief layer and a stress-compensation collar is also included. A computing system that includes a stress-relief layer and a stress-compensation collar is also included.
摘要翻译： 通过在基底下表面上分配聚合物以部分地嵌入设置在下表面上的焊料凸块的条件来形成应力消除层。 应力消除层流向焊料凸块。 应力补偿轴环形成在与基板配合的板上，并且SCC部分地嵌入焊料凸块。 还包括展示应力消除层和应力补偿套环的物品。 还包括一个包括应力消除层和应力补偿环的计算系统。
-
-
-
-
-
-
-
-
-
搜索结果
98 条记录 (耗时 0.055 秒)
