公开(公告)号：US4908695A

公开(公告)日：1990-03-13

申请号：US178650

申请日：1988-04-07

申请人： Atsushi Morihara ,  Yoshio Naganuma ,  Shuntaro Koyama ,  Kazuji Yamada ,  Tasao Soga ,  Hideo Arakawa ,  Shunsuke Nogita ,  Yukio Hishinuma

发明人： Atsushi Morihara ,  Yoshio Naganuma ,  Shuntaro Koyama ,  Kazuji Yamada ,  Tasao Soga ,  Hideo Arakawa ,  Shunsuke Nogita ,  Yukio Hishinuma

IPC分类号： H01L23/36 ,  H01L23/433 ,  H01L23/473 ,  H05K7/20

CPC分类号： H01L23/4338 ,  H01L2224/16

摘要： A heat conducting member is placed in the space between a semiconductor chip which generates heat and a heat transfer block which is cooled by a coolant, and the heat conducting member conducts heat from the semiconductor chip to the heat transfer block. The heat conducting member has a slanted surface which is inclined with respect to a surface to be cooled of the corresponding semiconductor chip. Even when the semiconductor chip is displaced or inclined with respect to the heat transfer block, the whole of the cooling surface of the semiconductor chip can be kept in contact with the corresponding heat conducting member.

公开(公告)号：US4906823A

公开(公告)日：1990-03-06

申请号：US202027

申请日：1988-06-03

申请人： Tadao Kushima ,  Tasao Soga ,  Kazuji Yamada ,  Mitugu Shirai

发明人： Tadao Kushima ,  Tasao Soga ,  Kazuji Yamada ,  Mitugu Shirai

IPC分类号： H01L21/56 ,  H01L21/60 ,  H01L23/12 ,  H01L23/498 ,  H05K3/34

CPC分类号： H01L24/81 ,  H01L21/563 ,  H01L23/49827 ,  H05K3/3478 ,  H01L2224/11003 ,  H01L2224/11334 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/19042 ,  H05K2201/09827 ,  H05K2201/10734 ,  H05K2201/2081 ,  H05K2203/0113 ,  H05K2203/0143 ,  H05K2203/0278 ,  H05K2203/0338 ,  H05K2203/0405 ,  H05K2203/043 ,  Y10T29/49218

摘要： The invention relates to a solder carrier comprising a sheet of self-support type, made of a material which does not react to a solder when it is melted, a plurality of small through holes, and solder filling the through holes, each of the small through holes having an end, the area of which is larger than that of the other end. By using this solder carrier, a semiconductor device can be flip-chip-connected to a carrier substrate through a bump method, and solder balls can be formed for connecting the carrier substrate to a multilayer circuit board. The through holes of the solder carrier, each of which holes is to be filled with solder, is formed by etching, and the solder is inserted in the holes under pressure by a roll or the like.

摘要翻译： 本发明涉及一种焊料载体，它包括一种自支撑型材料，它由熔化时不与焊料反应的材料制成，多个小通孔和填充通孔的焊料，每个小型 具有端部的通孔，其面积大于另一端的面积。 通过使用该焊料载体，可以通过凸块法将半导体器件倒装芯片连接到载体基板，并且可以形成用于将载体基板连接到多层电路板的焊球。 通过蚀刻形成每个要填充有焊料的孔的焊料载体的通孔，并且通过辊等将焊料插入孔中。

公开(公告)号：US4480478A

公开(公告)日：1984-11-06

申请号：US466027

申请日：1983-02-14

申请人： Hideo Sato ,  Motohisa Nishihara ,  Kazuji Yamada ,  Seikou Suzuki

发明人： Hideo Sato ,  Motohisa Nishihara ,  Kazuji Yamada ,  Seikou Suzuki

IPC分类号： G01L9/04 ,  G01B7/16 ,  G01D3/028 ,  G01L9/00 ,  G01L9/06 ,  G01L19/04 ,  H01L29/84

CPC分类号： G01L9/065

摘要： Four semiconductor strain gauges constitute a bridge circuit. This bridge circuit and a sensitivity temperature compensation circuit are connected in series, and a constant voltage is applied to the series circuit. The sensitivity temperature compensation circuit varies a voltage across the bridge circuit, depending upon temperatures. The constant voltage is divided to produce a predetermined voltage. The predetermined voltage is selected to be equal to the voltage of one output side node of the bridge circuit at the time when the semiconductor strain gauges are unstrained and at a predetermined temperature. The point of this voltage and the output side node are connected through a resistor so as to perform zero-point temperature compensation.

摘要翻译： 四个半导体应变计构成桥接电路。 该桥式电路和灵敏度温度补偿电路串联连接，并向串联电路施加恒定电压。 灵敏度温度补偿电路根据温度改变桥接电路两端的电压。 将恒定电压分压以产生预定电压。 选择预定电压等于当半导体应变计未受限制并处于预定温度时桥接电路的一个输出侧节点的电压。 该电压和输出侧节点通过电阻连接，以进行零点温度补偿。

公开(公告)号：US4404539A

公开(公告)日：1983-09-13

申请号：US236934

申请日：1981-02-23

申请人： Kazuji Yamada ,  Motohisa Nishihara ,  Hideo Sato ,  Seiko Suzuki ,  Ryoichi Kobayashi

发明人： Kazuji Yamada ,  Motohisa Nishihara ,  Hideo Sato ,  Seiko Suzuki ,  Ryoichi Kobayashi

IPC分类号： G01L9/04 ,  G01L9/00 ,  G01L9/06 ,  H01L29/84 ,  G01L1/22

CPC分类号： G01L9/0054 ,  G01L9/065

摘要： A semiconductor strain gauge is arranged as a bridge having four piezoresistive elements which each include a low impurity concentration diffused portion and a heavily-doped diffused portion. The resistance values of the two low impurity concentration diffused portions opposite each other in the bridge are greater than the resistance values of the other two lower impurity concentration portions. The resistances of the heavily-doped diffused portion are selected so that the resistance of the piezoresistive elements are equal. However, by virtue of the fact that the resistance temperature coefficient of the low impurity portions are greater than the resistance temperature coefficients of the high impurity portions, the overall resistance temperature coefficients of the bridge arms will be different. This permits the zero-point voltage of the bridge to always increase with an increase in temperature.

摘要翻译： 半导体应变仪布置为具有四个压阻元件的桥，每个压阻元件包括低杂质浓度扩散部分和重掺杂扩散部分。 在桥中彼此相对的两个低杂质浓度扩散部分的电阻值大于其它两个较低杂质浓度部分的电阻值。 选择重掺杂扩散部分的电阻，使得压阻元件的电阻相等。 然而，由于低杂质部分的电阻温度系数大于高杂质部分的电阻温度系数，所以桥臂的整体电阻温度系数将不同。 这允许桥接器的零点电压总是随着温度的升高而增加。

公开(公告)号：US4050313A

公开(公告)日：1977-09-27

申请号：US692368

申请日：1976-06-03

申请人： Satoshi Shimada ,  Kazuji Yamada ,  Yasumasa Matsuda ,  Ichiro Kimura ,  Michitaka Shimazoe ,  Yukio Takahashi

发明人： Satoshi Shimada ,  Kazuji Yamada ,  Yasumasa Matsuda ,  Ichiro Kimura ,  Michitaka Shimazoe ,  Yukio Takahashi

IPC分类号： G01L9/00 ,  G01L9/06

CPC分类号： G01L9/0054

摘要： A semiconductor pressure transducer comprises a circular diaphragm formed of a single crystal semiconductor material, at least a first strain gauge element having a piezoresistance effect and formed by injecting an impurity into the diaphragm in a linear region extending in parallel with a predetermined axis which extends transversely of the surface of the diaphragm, at least a second strain gauge element having the piezoresistance effect and formed by injecting an impurity into the diaphragm in a linear region extending in the direction perpendicular to the axis, and means for securing the diaphragm at the outer peripheral portion thereof. The distance between the second strain gauge element and the center of the diaphragm is differed from the distance between the center of the first strain gauge element and the latter.

摘要翻译： 半导体压力传感器包括由单晶半导体材料形成的圆形隔膜，至少第一应变计元件，具有压阻效应，并且通过在与横向延伸的预定轴线平行延伸的线性区域中注入杂质形成。 至少一个具有压电效应的第二应变计元件，并且通过在垂直于该轴线的方向上延伸的线性区域中将杂质注入到隔膜中而形成，以及用于将隔膜固定在外周的装置 部分。 第二应变计元件与隔膜的中心之间的距离与第一应变计元件的中心与后者之间的距离不同。

公开(公告)号：US07141741B2

公开(公告)日：2006-11-28

申请号：US10665523

申请日：2003-09-22

申请人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

发明人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

IPC分类号： H05K1/03

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device in which electrodes of a plurality of semiconductor elements are bonded onto at least one of a plurality of electrode patterns on an insulator substrate, the other surface of the insulator substrate being bonded to a heat dissipating base. The upper surface of the heat dissipating base is covered with a member for cutting off the semiconductor elements from the outer environment. Terminals electrically connect the electrodes on said insulator substrate and the electrode placed outside the cutoff member. The material of the heat dissipating base has a linear expanding coefficient larger than that of the semiconductor element and smaller than three times that of the semiconductor element, and a thermal conductivity larger than 100 W/mK. The semiconductor elements are arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

摘要翻译： 一种半导体器件，其中多个半导体元件的电极被结合到绝缘体基板上的多个电极图案中的至少一个上，绝缘体基板的另一个表面被结合到散热基底。 散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件。 端子电连接所述绝缘体基板上的电极和放置在切断构件外部的电极。 散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的三倍，热导率大于100W / mK。 半导体元件布置在绝缘体基板上的至少一个电极表面和由另一个电极表面划分的至少两个区域中。

公开(公告)号：US06594149B2

公开(公告)日：2003-07-15

申请号：US10099995

申请日：2002-03-19

申请人： Kazuji Yamada ,  Akihiro Tamba ,  Takayoshi Nakamura ,  Ryuichi Saito ,  Toshio Ogawa ,  Hisanori Okamura

发明人： Kazuji Yamada ,  Akihiro Tamba ,  Takayoshi Nakamura ,  Ryuichi Saito ,  Toshio Ogawa ,  Hisanori Okamura

IPC分类号： H05K720

CPC分类号： H05K7/20872 ,  H01L2924/0002 ,  H05K7/20927 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/4935 ,  H01L2924/00

摘要： A liquid-cooled circuit device including: a module having a circuit element and a module base plate on surface of which the circuit element is mounted; a circuit case for accommodating the module; and a cooling liquid chamber for flowing a cooling liquid in contact with a back face of the module base plate of said module. The module base plate of the module is fitted into an opening provided in a member forming the cooling liquid chamber and welded without a gap.

摘要翻译： 一种液冷回路装置，包括：具有电路元件的模块和安装有电路元件的表面上的模块基板; 用于容纳模块的电路壳体; 以及用于使与所述模块的模块基板的背面接触的冷却液体流动的冷却液室。 模块的模块基板装配到设置在形成冷却液室的构件中并且没有间隙地焊接的开口中。

公开(公告)号：US06434008B1

公开(公告)日：2002-08-13

申请号：US09385632

申请日：1998-08-27

申请人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

发明人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

IPC分类号： H05K702

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

摘要翻译： 一种半导体器件，其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上，所述绝缘体衬底在主表面上形成多个电极图案，所述半导体元件的每个电极电连接到所述电极图案， 绝缘体基板的另一表面被结合到散热基底上，散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件，将绝缘体基板上的电极与电极电连接的端子 设置在切断部件外侧，散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的线膨胀系数的3倍，导热系数 大于100 W / mK，半音 电感元件布置在至少一个电极表面上，并且在至少两个区域中被绝缘体基底上的另一个电极表面分隔。

公开(公告)号：US06291880B1

公开(公告)日：2001-09-18

申请号：US09248000

申请日：1999-02-10

申请人： Toshio Ogawa ,  Masaaki Takahashi ,  Masahiro Gouda ,  Noritaka Kamimura ,  Kazuhiro Suzuki ,  Junichi Saeki ,  Kazuji Yamada ,  Makoto Ishii ,  Akihiro Tamba

发明人： Toshio Ogawa ,  Masaaki Takahashi ,  Masahiro Gouda ,  Noritaka Kamimura ,  Kazuhiro Suzuki ,  Junichi Saeki ,  Kazuji Yamada ,  Makoto Ishii ,  Akihiro Tamba

IPC分类号： H01L2334

CPC分类号： H01L25/165 ,  H01L23/4334 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes a main circuit part having a semiconductor device formed on an electrode plate of a lead frame and a control circuit part having protective functions, which is integrally molded by a resin mold part into an integral mold structure.

摘要翻译： 半导体器件包括主电路部分，其具有形成在引线框架的电极板上的半导体器件和具有保护功能的控制电路部件，该半导体器件通过树脂模具部件整体模制成整体模具结构。

公开(公告)号：US5315482A

公开(公告)日：1994-05-24

申请号：US961394

申请日：1992-10-15

申请人： Akira Tanaka ,  Hiroichi Shinohara ,  Kazuji Yamada ,  Takao Ohba ,  Akira Yamagiwa ,  Hitoshi Yoshidome ,  Yuji Shirai ,  Toshio Hatada ,  Munehisa Kishimoto ,  Michiharu Honda

发明人： Akira Tanaka ,  Hiroichi Shinohara ,  Kazuji Yamada ,  Takao Ohba ,  Akira Yamagiwa ,  Hitoshi Yoshidome ,  Yuji Shirai ,  Toshio Hatada ,  Munehisa Kishimoto ,  Michiharu Honda

IPC分类号： H01L23/36 ,  H01L23/367 ,  H01L25/10 ,  H05K1/02 ,  H05K1/14 ,  H05K1/18 ,  H05K3/00 ,  H05K3/36 ,  H05K7/20

CPC分类号： H05K1/021 ,  H01L23/367 ,  H01L25/105 ,  H01L2225/107 ,  H01L2225/1094 ,  H01L2924/0002 ,  H05K1/141 ,  H05K1/182 ,  H05K2203/049 ,  H05K3/0061 ,  H05K3/366

摘要： A semiconductor apparatus comprises a heat diffusing plate and a surface installing printed board. A semiconductor device of a high heat generation is installed on the heat diffusing plate. A surface installing package and chip parts are installed on both surfaces of the printed board. A through hole is formed at the center of the printed board so that the semiconductor device is located at the center. The heat diffusing plate on which the semiconductor device has been installed and the surface installing printed board are connected and integrated.

摘要翻译： 半导体装置包括热扩散板和表面安装印刷板。 在散热板上安装有高发热的半导体装置。 表面安装封装和芯片部件安装在印刷电路板的两个表面上。 在印刷电路板的中心形成通孔，使得半导体器件位于中心。 已经安装了半导体器件的散热板和表面安装印刷板连接并整合。