公开(公告)号：US4906823A

公开(公告)日：1990-03-06

申请号：US202027

申请日：1988-06-03

申请人： Tadao Kushima ,  Tasao Soga ,  Kazuji Yamada ,  Mitugu Shirai

发明人： Tadao Kushima ,  Tasao Soga ,  Kazuji Yamada ,  Mitugu Shirai

IPC分类号： H01L21/56 ,  H01L21/60 ,  H01L23/12 ,  H01L23/498 ,  H05K3/34

CPC分类号： H01L24/81 ,  H01L21/563 ,  H01L23/49827 ,  H05K3/3478 ,  H01L2224/11003 ,  H01L2224/11334 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/19042 ,  H05K2201/09827 ,  H05K2201/10734 ,  H05K2201/2081 ,  H05K2203/0113 ,  H05K2203/0143 ,  H05K2203/0278 ,  H05K2203/0338 ,  H05K2203/0405 ,  H05K2203/043 ,  Y10T29/49218

摘要： The invention relates to a solder carrier comprising a sheet of self-support type, made of a material which does not react to a solder when it is melted, a plurality of small through holes, and solder filling the through holes, each of the small through holes having an end, the area of which is larger than that of the other end. By using this solder carrier, a semiconductor device can be flip-chip-connected to a carrier substrate through a bump method, and solder balls can be formed for connecting the carrier substrate to a multilayer circuit board. The through holes of the solder carrier, each of which holes is to be filled with solder, is formed by etching, and the solder is inserted in the holes under pressure by a roll or the like.

摘要翻译： 本发明涉及一种焊料载体，它包括一种自支撑型材料，它由熔化时不与焊料反应的材料制成，多个小通孔和填充通孔的焊料，每个小型 具有端部的通孔，其面积大于另一端的面积。 通过使用该焊料载体，可以通过凸块法将半导体器件倒装芯片连接到载体基板，并且可以形成用于将载体基板连接到多层电路板的焊球。 通过蚀刻形成每个要填充有焊料的孔的焊料载体的通孔，并且通过辊等将焊料插入孔中。

公开(公告)号：US4970577A

公开(公告)日：1990-11-13

申请号：US337145

申请日：1989-04-12

申请人： Satoru Ogihara ,  Shunichi Numata ,  Kunio Miyazaki ,  Takashi Yokoyama ,  Ken Takahashi ,  Tasao Soga ,  Kazuji Yamada ,  Hiroichi Shinohara ,  Hideo Suzuki

发明人： Satoru Ogihara ,  Shunichi Numata ,  Kunio Miyazaki ,  Takashi Yokoyama ,  Ken Takahashi ,  Tasao Soga ,  Kazuji Yamada ,  Hiroichi Shinohara ,  Hideo Suzuki

IPC分类号： H01L21/60 ,  H01L23/12 ,  H01L23/498 ,  H01L23/52 ,  H01L23/64 ,  H05K1/02 ,  H05K1/03 ,  H05K1/14 ,  H05K3/34 ,  H05K3/36

CPC分类号： H01L23/642 ,  H01L23/49827 ,  H01L23/49833 ,  H05K1/141 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/01004 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/15312 ,  H01L2924/16152 ,  H05K1/0271 ,  H05K1/0306 ,  H05K2201/045 ,  H05K2201/049 ,  H05K2201/068 ,  H05K2201/10318 ,  H05K2201/10704 ,  H05K3/3426 ,  H05K3/368

摘要： A semiconductor chip module includes semiconductor chips each of which has contacts on its entire front face. A multi-layered organic circuit board having a small dielectric constant is provided for mounting the semiconductor chips. Intermediate ceramic substrates having the same thermal expansion coefficient as that of the semiconductor chip, are also provided. Each such intermediate ceramic substrate has contacts on its front and back faces corresponding to those of the semiconductor chip. These contacts are electrically connected directly in a one-to-one relationship. The contacts on the semiconductor chip and the corresponding ones on the front face of the intermediate ceramic substrates are connected by solder. The contacts on the back face of the intermediate ceramic substrate and the corresponding contacts on the front face of the multi-layered ceramic circuit board are connected by respective conductive pins having a predetermined flexibility and rigidity through a predetermined gap therebetween. With this arrangement, the relative displacement due to a thermal expansion difference between the intermediate ceramic substrate and the multi-layered organic circuit board is permitted without causing substantial stress thereon.

公开(公告)号：US4908695A

公开(公告)日：1990-03-13

申请号：US178650

申请日：1988-04-07

申请人： Atsushi Morihara ,  Yoshio Naganuma ,  Shuntaro Koyama ,  Kazuji Yamada ,  Tasao Soga ,  Hideo Arakawa ,  Shunsuke Nogita ,  Yukio Hishinuma

发明人： Atsushi Morihara ,  Yoshio Naganuma ,  Shuntaro Koyama ,  Kazuji Yamada ,  Tasao Soga ,  Hideo Arakawa ,  Shunsuke Nogita ,  Yukio Hishinuma

IPC分类号： H01L23/36 ,  H01L23/433 ,  H01L23/473 ,  H05K7/20

CPC分类号： H01L23/4338 ,  H01L2224/16

摘要： A heat conducting member is placed in the space between a semiconductor chip which generates heat and a heat transfer block which is cooled by a coolant, and the heat conducting member conducts heat from the semiconductor chip to the heat transfer block. The heat conducting member has a slanted surface which is inclined with respect to a surface to be cooled of the corresponding semiconductor chip. Even when the semiconductor chip is displaced or inclined with respect to the heat transfer block, the whole of the cooling surface of the semiconductor chip can be kept in contact with the corresponding heat conducting member.

公开(公告)号：US5956231A

公开(公告)日：1999-09-21

申请号：US539075

申请日：1995-10-04

申请人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

发明人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

IPC分类号： H01L23/049 ,  H01L23/495 ,  H01L25/065 ,  H02M7/00 ,  H05K7/02 ,  H05K7/04

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H02M7/003 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/4943 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351

摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

摘要翻译： 一种半导体器件，其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上，所述绝缘体衬底在主表面上形成多个电极图案，所述半导体元件的每个电极电连接到所述电极图案， 绝缘体基板的另一表面被结合到散热基底上，散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件，将绝缘体基板上的电极与电极电连接的端子 设置在切断部件外侧，散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的线膨胀系数的3倍，导热系数 大于100 W / mK，半音 电感元件布置在至少一个电极表面上，并且在至少两个区域中被绝缘体基底上的另一个电极表面分隔。

公开(公告)号：US07141741B2

公开(公告)日：2006-11-28

申请号：US10665523

申请日：2003-09-22

申请人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

发明人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

IPC分类号： H05K1/03

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device in which electrodes of a plurality of semiconductor elements are bonded onto at least one of a plurality of electrode patterns on an insulator substrate, the other surface of the insulator substrate being bonded to a heat dissipating base. The upper surface of the heat dissipating base is covered with a member for cutting off the semiconductor elements from the outer environment. Terminals electrically connect the electrodes on said insulator substrate and the electrode placed outside the cutoff member. The material of the heat dissipating base has a linear expanding coefficient larger than that of the semiconductor element and smaller than three times that of the semiconductor element, and a thermal conductivity larger than 100 W/mK. The semiconductor elements are arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

摘要翻译： 一种半导体器件，其中多个半导体元件的电极被结合到绝缘体基板上的多个电极图案中的至少一个上，绝缘体基板的另一个表面被结合到散热基底。 散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件。 端子电连接所述绝缘体基板上的电极和放置在切断构件外部的电极。 散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的三倍，热导率大于100W / mK。 半导体元件布置在绝缘体基板上的至少一个电极表面和由另一个电极表面划分的至少两个区域中。

公开(公告)号：US06434008B1

公开(公告)日：2002-08-13

申请号：US09385632

申请日：1998-08-27

申请人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

发明人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

IPC分类号： H05K702

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

摘要翻译： 一种半导体器件，其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上，所述绝缘体衬底在主表面上形成多个电极图案，所述半导体元件的每个电极电连接到所述电极图案， 绝缘体基板的另一表面被结合到散热基底上，散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件，将绝缘体基板上的电极与电极电连接的端子 设置在切断部件外侧，散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的线膨胀系数的3倍，导热系数 大于100 W / mK，半音 电感元件布置在至少一个电极表面上，并且在至少两个区域中被绝缘体基底上的另一个电极表面分隔。

公开(公告)号：US06588647B2

公开(公告)日：2003-07-08

申请号：US10228295

申请日：2002-08-27

申请人： Kazuji Yamada ,  Akihiro Tamba ,  Takayoshi Nakamura ,  Ryuichi Saito ,  Toshio Ogawa ,  Hisanori Okamura

发明人： Kazuji Yamada ,  Akihiro Tamba ,  Takayoshi Nakamura ,  Ryuichi Saito ,  Toshio Ogawa ,  Hisanori Okamura

IPC分类号： B23K2012

CPC分类号： H05K7/20872 ,  H01L2924/0002 ,  H05K7/20927 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/4935 ,  H01L2924/00

摘要： A liquid-cooled circuit device including: a module having a circuit element and a module base plate on surface of which the circuit element is mounted; a circuit case for accommodating the module; and a cooling liquid chamber for flowing a cooling liquid in contact with a back face of the module base plate of said module. The module base plate of the module is fitted into an opening provided in a member forming the cooling liquid chamber and welded without a gap.

公开(公告)号：US5097318A

公开(公告)日：1992-03-17

申请号：US331802

申请日：1989-04-03

申请人： Akira Tanaka ,  Kazuji Yamada ,  Hirokazu Inoue ,  Hideo Arakawa ,  Masahide Okamoto

发明人： Akira Tanaka ,  Kazuji Yamada ,  Hirokazu Inoue ,  Hideo Arakawa ,  Masahide Okamoto

IPC分类号： H01L23/538 ,  H01L23/04 ,  H01L23/057 ,  H01L23/12 ,  H01L23/467 ,  H01L23/498 ,  H01L23/50

CPC分类号： H01L23/49822 ,  H01L23/057 ,  H01L23/467 ,  H01L23/49838 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/19041 ,  H01L2924/30107

摘要： A cavity-down type package for a semiconductor device comprises an insulating base substrate on which the semiconductor device and another insulating cap substrate with plural outer connection terminals on its outer surface and with electrodes provided on conductive layers for electric conduction on its inner surface. The electrodes on the insulating base substrate and those on the insulating cap substrate are connected with each other by using conductive material such as bumps.

摘要翻译： 一种用于半导体器件的降空型封装，包括其上安装有半导体器件（1）的绝缘基底（6）和在其外表面上具有多个外连接端子（5）的另一绝缘帽衬底（8） 其中电极（11）设置在导电层（4）上，用于在其内表面上导电。 绝缘基底基板上的电极和绝缘帽基板（8）上的电极通过诸如凸块的导电材料相互连接。

公开(公告)号：US5095359A

公开(公告)日：1992-03-10

申请号：US413622

申请日：1989-09-28

申请人： Akira Tanaka ,  Hirokazu Inoue ,  Kazuji Yamada ,  Kunio Miyazaki ,  Osamu Miura ,  Hideo Arakawa ,  Hiroshi Yokoyama ,  Yoshio Naganuma ,  Atsushi Morihara ,  Katsunori Ouchi

发明人： Akira Tanaka ,  Hirokazu Inoue ,  Kazuji Yamada ,  Kunio Miyazaki ,  Osamu Miura ,  Hideo Arakawa ,  Hiroshi Yokoyama ,  Yoshio Naganuma ,  Atsushi Morihara ,  Katsunori Ouchi

IPC分类号： G06F1/18 ,  H01L21/60 ,  H01L23/057 ,  H01L23/467 ,  H01L23/498 ,  H01L23/50 ,  H01L25/065

CPC分类号： H01L23/467 ,  H01L23/057 ,  H01L23/49822 ,  H01L23/50 ,  H01L24/32 ,  H01L25/0655 ,  H01L2224/16225 ,  H01L2224/32188 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49109 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01025 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/19041 ,  H01L2924/30107

摘要： A semiconductor package for use in computers includes a insulating substrate onto which a semiconductor device is mounted, an insulating cap which shuts out outside air and seals said semiconductor device, power-source lines which provide power to the semiconductor device, and signal lines which transmit output signals from the semiconductor device to external circuits. The signal lines are arranged perpendicularly to the insulating substrate so that they are prevented from the dielectric constant of the insulating substrate, while the power-source lines are formed within the insulating substrate and connected through conductive layers parallel to the surface onto which the semiconductor is mounted to external leads.

公开(公告)号：US4670969A

公开(公告)日：1987-06-09

申请号：US694990

申请日：1985-01-25

申请人： Kazuji Yamada ,  Yutaka Kobayashi ,  Kanji Kawakami ,  Satoshi Shimada ,  Masanori Tanabe ,  Shigeyuki Kobori

发明人： Kazuji Yamada ,  Yutaka Kobayashi ,  Kanji Kawakami ,  Satoshi Shimada ,  Masanori Tanabe ,  Shigeyuki Kobori

IPC分类号： H01L29/84 ,  G01L9/00 ,  G01P15/08 ,  H01L21/428

CPC分类号： G01L9/0042 ,  G01P15/0802 ,  G01P2015/084 ,  Y10S148/012 ,  Y10S148/159 ,  Y10S148/168 ,  Y10T29/42 ,  Y10T29/49103

摘要： A method of making a silicon diaphragm pressure sensor includes forming an oxide film on one surface of a monocrystalline silicon substrate. A polycrystalline silicon layer is formed on the oxide film. The oxide film may be partly removed before the formation of the polycrystalline silicon layer. The polycrystalline silicon layer is heated and melt to recrystallize the same, thereby converting the polycrystalline silicon layer into a monocrystalline silicon layer. On the monocrystalline silicon layer may be epitaxially grown an additional monocrystalline silicon layer. By using the oxide film as an etching stopper, a predetermined portion of the substrate is etched over a range from the other surface of the substrate to the oxide film, thereby providing a diaphragm of the pressure sensor.

摘要翻译： 制造硅膜压力传感器的方法包括在单晶硅衬底的一个表面上形成氧化膜。 在氧化物膜上形成多晶硅层。 在形成多晶硅层之前可以部分地去除氧化膜。 将多晶硅层加热熔化，使其重结晶，从而将多晶硅层转化为单晶硅层。 在单晶硅层上可以外延生长另外的单晶硅层。 通过使用氧化膜作为蚀刻停止层，在从衬底的另一个表面到氧化膜的范围内蚀刻衬底的预定部分，从而提供压力传感器的隔膜。