公开(公告)号：US5315482A

公开(公告)日：1994-05-24

申请号：US961394

申请日：1992-10-15

申请人： Akira Tanaka ,  Hiroichi Shinohara ,  Kazuji Yamada ,  Takao Ohba ,  Akira Yamagiwa ,  Hitoshi Yoshidome ,  Yuji Shirai ,  Toshio Hatada ,  Munehisa Kishimoto ,  Michiharu Honda

发明人： Akira Tanaka ,  Hiroichi Shinohara ,  Kazuji Yamada ,  Takao Ohba ,  Akira Yamagiwa ,  Hitoshi Yoshidome ,  Yuji Shirai ,  Toshio Hatada ,  Munehisa Kishimoto ,  Michiharu Honda

IPC分类号： H01L23/36 ,  H01L23/367 ,  H01L25/10 ,  H05K1/02 ,  H05K1/14 ,  H05K1/18 ,  H05K3/00 ,  H05K3/36 ,  H05K7/20

CPC分类号： H05K1/021 ,  H01L23/367 ,  H01L25/105 ,  H01L2225/107 ,  H01L2225/1094 ,  H01L2924/0002 ,  H05K1/141 ,  H05K1/182 ,  H05K2203/049 ,  H05K3/0061 ,  H05K3/366

摘要： A semiconductor apparatus comprises a heat diffusing plate and a surface installing printed board. A semiconductor device of a high heat generation is installed on the heat diffusing plate. A surface installing package and chip parts are installed on both surfaces of the printed board. A through hole is formed at the center of the printed board so that the semiconductor device is located at the center. The heat diffusing plate on which the semiconductor device has been installed and the surface installing printed board are connected and integrated.

摘要翻译： 半导体装置包括热扩散板和表面安装印刷板。 在散热板上安装有高发热的半导体装置。 表面安装封装和芯片部件安装在印刷电路板的两个表面上。 在印刷电路板的中心形成通孔，使得半导体器件位于中心。 已经安装了半导体器件的散热板和表面安装印刷板连接并整合。

公开(公告)号：US5195576A

公开(公告)日：1993-03-23

申请号：US659671

申请日：1991-02-25

申请人： Toshio Hatada ,  Hitoshi Matsushima ,  Yoshihiro Kondou ,  Hiroshi Inoue ,  Kanji Otsuka ,  Yuji Shirai ,  Takao Ohba ,  Akira Yamagiwa

发明人： Toshio Hatada ,  Hitoshi Matsushima ,  Yoshihiro Kondou ,  Hiroshi Inoue ,  Kanji Otsuka ,  Yuji Shirai ,  Takao Ohba ,  Akira Yamagiwa

IPC分类号： H01L23/473 ,  F28F3/02 ,  H01L23/367 ,  H01L23/467 ,  H05K7/10 ,  H05K7/20

CPC分类号： F28F3/022 ,  H01L23/3672 ,  H01L23/3677 ,  H01L23/467 ,  H05K7/1015 ,  H01L2224/45015 ,  H01L2224/49109 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01068 ,  H01L2924/16195

摘要： An LSI cooling apparatus having various structures is used in electronic devices such as computer systems. In particular, the LSI cooling of apparatus is suitable for cooling of LSIs having high heat generating densities. In a cooling apparatus of the present invention, a heat sink is constructed to be small in pressure loss and excellent in cooling performance. This is because the heat sink comprises thin wire fins so set that the Reynold's number may not exceed 40. As a result, LSIs generating a large amount of heat can be cooled. Further, a heat sink having rigidity can be obtained by disposing wide-width wire drawn substances in thin wires or by using supports. Further, a computer comprising LSIs equipped with heat sinks can cope with various cooling air sending methods and it can be cooled with low noises.

摘要翻译： 具有各种结构的LSI冷却装置用于诸如计算机系统的电子设备中。 特别地，装置的LSI冷却适用于具有高发热密度的LSI的冷却。 在本发明的冷却装置中，散热器的压力损失小，冷却性能优异。 这是因为散热器包括细线散热片，使得雷诺数不得超过40个。结果，可以冷却产生大量热量的LSI。 此外，通过将宽幅拉丝物质设置在细线中或通过使用支撑体，可以获得具有刚性的散热器。 此外，包括散热器的LSI的计算机可以应对各种冷却空气送出方法，并且可以以低噪声进行冷却。

公开(公告)号：US5358032A

公开(公告)日：1994-10-25

申请号：US13423

申请日：1993-02-04

申请人： Masatsugu Arai ,  Akiomi Kohno ,  Toshio Hatada ,  Yoshihiro Kondo ,  Toshihiro Komatsu ,  Kanji Otsuka ,  Yuji Shirai ,  Susumu Iwai

发明人： Masatsugu Arai ,  Akiomi Kohno ,  Toshio Hatada ,  Yoshihiro Kondo ,  Toshihiro Komatsu ,  Kanji Otsuka ,  Yuji Shirai ,  Susumu Iwai

IPC分类号： H01L23/36 ,  F28F3/02 ,  H01L23/367 ,  H01L23/467 ,  F28F7/00

CPC分类号： F28F3/022 ,  H01L23/3677 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/49 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/16195

摘要： Disclosed is an LSI package cooling heat sink having a heat diffusion plate and thin wire fins joined to the heat diffusion plate. The heat sink is mounted on an LSI package and the LSI package is cooled by the flowing of fluid through the thin wire fins. The wire fins are made of a net formed of longitudinal thin wires intersecting with horizontal thin wires. The net is formed to continuous rectangular shapes or a swirl shape and joined to the heat diffusion plate. The net is constituted so that the number of the thin wires vertical to the heat diffusion plate is larger than the number of the thin wires parallel thereto and the net is joined to the heat diffusion plate by brazing, diffusion joint, pressure welding or the like. Since the heat sink is formed of the net composed of the longitudinal thin wires intersecting with the horizontal thin wires, the irregular portions of the adjacent thin wires are formed at a dislocated position and fluid striking against the thin wires produces many turbulent flows so that a high heat transfer performance can be obtained. Further, since the net formed of the thin wires is used, the size of cooling fins can be reduced and noise can be also lowered. Further, it is possible to produce an LSI package cooling heat sink in a short time which heat sink is excellent in mass-production.

摘要翻译： 公开了具有热扩散板的LSI封装冷却散热器和与散热板接合的细线散热片。 散热器安装在LSI封装上，并且LSI封装通过流体流过细金属丝散热片来冷却。 金属丝散热片由与水平细线相交的纵向细线形成的网构成。 网形成为连续的矩形形状或漩涡形状并且连接到热扩散板。 网构成为与散热板垂直的细线的数量大于与其平行的细线的数量，并且网通过钎焊，扩散接头，压焊等连接到热扩散板 。 由于散热器由与横向细线相交的纵向细线组成的网形成，所以相邻细线的不规则部分形成在脱位位置，并且撞击细线的流体产生许多湍流，使得 可以获得高的传热性能。 此外，由于使用由细线形成的网，所以能够降低散热片的尺寸，降低噪音。 此外，可以在短时间内制造LSI封装冷却散热器，散热器的批量生产性优异。

公开(公告)号：US20110156225A1

公开(公告)日：2011-06-30

申请号：US13062565

申请日：2009-07-31

申请人： Hiroshi Hozoji ,  Toshiaki Morita ,  Yusuke Yasuda ,  Chiko Yorita ,  Yuji Shirai

发明人： Hiroshi Hozoji ,  Toshiaki Morita ,  Yusuke Yasuda ,  Chiko Yorita ,  Yuji Shirai

IPC分类号： H01L23/552 ,  H01L21/56

CPC分类号： H01L23/3121 ,  H01L21/561 ,  H01L23/3677 ,  H01L23/552 ,  H01L23/66 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/165 ,  H01L2221/68331 ,  H01L2224/32225 ,  H01L2224/32227 ,  H01L2224/45599 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/3025 ,  H05K1/0206 ,  H05K1/0218 ,  H05K3/284 ,  H05K2201/0715 ,  H05K2201/0919 ,  H05K2203/1131 ,  H05K2203/1316 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A semiconductor device achieving both electromagnetic wave shielding property and reliability in a heating process upon mounting electronic components. In the semiconductor device, mount devices 5 and 6 mounted on a main surface of a circuit board 1 are provided, the mount devices 5 and 6 are electrically connected to a wiring pattern 4 at the main surface of the circuit board 1, a sealant 7 of an insulating resin is formed to seal the mount devices 5 and 6, metal particles are applied to a surface of the sealant 7, and the metal particles applied are sintered, thereby forming an electromagnetic shielding layer 2, and electrically connecting the electromagnetic shielding layer 2 to a ground pattern 3 of the circuit board 1.

摘要翻译： 一种在安装电子元件时实现电加热过程中的电磁波屏蔽性和可靠性的半导体器件。 在半导体装置中，设置安装在电路基板1的主表面上的安装装置5和6，安装装置5和6在电路板1的主表面电连接到布线图案4，密封剂7 形成绝缘树脂以密封安装装置5和6，将金属颗粒施加到密封剂7的表面，并且将所施加的金属颗粒烧结，从而形成电磁屏蔽层2，并将电磁屏蔽层 2到电路板1的接地图案3。

公开(公告)号：US07583163B2

公开(公告)日：2009-09-01

申请号：US11891368

申请日：2007-08-10

申请人： Yasuo Osone ,  Chiko Yorita ,  Yuji Shirai ,  Seiichi Tomoi

发明人： Yasuo Osone ,  Chiko Yorita ,  Yuji Shirai ,  Seiichi Tomoi

IPC分类号： H03H9/00 ,  H03H9/205 ,  H01L41/08

CPC分类号： H03H3/04 ,  H03H9/564 ,  H03H9/589 ,  H03H2003/025

摘要： A technique capable of integrally forming SMR type acoustic wave filters corresponding to multiple bands on the same chip at low cost is provided. In SMR type acoustic wave filters including multiple bandpass filters corresponding to multiple bands formed over the same die (substrate), acoustic multilayer films are formed without or with a minimum number of masks and piezoelectric thin films having different thicknesses for respective bands are collectively formed. For example, after the acoustic multilayer films (low acoustic impedance layers and high acoustic impedance layers) are formed in a deep groove in a terrace paddy field shape over the die in a maskless manner, the piezoelectric thin films are c-axis-oriented and grown, and are polished by CMP method or the like to be adjusted in a thickness for respective bands, and therefore, the SMR type acoustic wave filters for multiple bands are formed over the same chip.

摘要翻译： 提供了能够以低成本一体地形成对应于同一芯片上的多个频带的SMR型声波滤波器的技术。 在包括对应于形成在同一芯片（基板）上的多个带的多个带通滤波器的SMR型声波滤波器中，形成声学多层膜，而不需要最少数量的掩模，并且共同形成具有不同厚度的压电薄膜。 例如，在以无掩模的方式在模具上形成在平台水田的深槽中的声学多层膜（低声阻抗层和高声阻抗层）之后，压电薄膜是c轴取向的， 并通过CMP方法等进行抛光，以对各个带的厚度进行调整，因此，在同一芯片上形成多个带的SMR型声波滤波器。

公开(公告)号：US4694418A

公开(公告)日：1987-09-15

申请号：US714809

申请日：1985-03-22

申请人： Fumio Ueno ,  Takeshi Yamakawa ,  Yuji Shirai

发明人： Fumio Ueno ,  Takeshi Yamakawa ,  Yuji Shirai

IPC分类号： G06G7/14 ,  G06N7/04 ,  H01L27/06 ,  H03K19/00 ,  H03K19/094 ,  G06G7/00 ,  G06G7/12

CPC分类号： H03K19/00 ,  G06G7/14 ,  G06N7/043 ,  H01L27/0629 ,  H03K19/094 ,  Y10S706/90

摘要： A fuzzy logic circuit comprising a current mirror comprising an FET, a first input current source connected to the input side of the current mirror, a second input current source, a wired OR connected at its input side to the output side of the current mirror and to the second input current source, and an output terminal connected to the output side of the wired OR.

摘要翻译： 一种模糊逻辑电路，包括电流镜，其包括FET，连接到电流镜的输入侧的第一输入电流源，第二输入电流源，在其输入侧连接到电流镜的输出侧的有线OR，以及 到第二输入电流源，以及连接到有线OR的输出侧的输出端子。

公开(公告)号：US20100172116A1

公开(公告)日：2010-07-08

申请号：US12612699

申请日：2009-11-05

申请人： Chiko Yorita ,  Yoshihide Yamaguchi ,  Yuji Shirai ,  Yu Hasegawa

发明人： Chiko Yorita ,  Yoshihide Yamaguchi ,  Yuji Shirai ,  Yu Hasegawa

IPC分类号： H05K9/00 ,  H05K3/36

CPC分类号： H01L21/565 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/552 ,  H01L23/66 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/165 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/3025 ,  H05K1/0218 ,  H05K3/0052 ,  H05K3/181 ,  H05K3/284 ,  H05K9/0084 ,  Y10T29/49126 ,  H01L2224/81 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A shielded electronic component including a wiring board, at least one semiconductor chip mounted on a main surface of the wiring board, a sealant which seals the whole of an upper surface of the wiring board, and a nickel (Ni) plating film formed on an upper surface of the sealant is provided. The Ni plating film is formed on a palladium (Pd) pretreatment layer formed on the upper surface of the sealant with using high-pressure CO2 in a state of protecting a back surface of the wiring board, and is electrically connected with an end portion of a ground wiring layer of the wiring board or a ground (GND) connection through-hole connected with the end portion of the ground wiring layer.

摘要翻译： 一种屏蔽电子元件，包括布线板，安装在所述布线板的主表面上的至少一个半导体芯片，密封所述布线板的整个上表面的密封剂和形成在所述布线板上的镍（Ni） 提供密封剂的上表面。 在保护接线板的背面的状态下，使用高压CO 2形成在密封剂的上表面上的钯（Pd）预处理层上形成Ni镀膜，并与 布线板的接地布线层或与接地布线层的端部连接的接地（GND）连接通孔。

公开(公告)号：US20120292772A1

公开(公告)日：2012-11-22

申请号：US13561302

申请日：2012-07-30

申请人： Chiko Yorita ,  Yoshihide Yamaguchi ,  Yuji Shirai ,  Yu Hasegawa

发明人： Chiko Yorita ,  Yoshihide Yamaguchi ,  Yuji Shirai ,  Yu Hasegawa

IPC分类号： H01L23/52

CPC分类号： H01L21/565 ,  H01L21/568 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/552 ,  H01L23/66 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/165 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/3025 ,  H05K1/0218 ,  H05K3/0052 ,  H05K3/181 ,  H05K3/284 ,  H05K9/0084 ,  Y10T29/49126 ,  H01L2224/81 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A shielded electronic component including a wiring board, at least one semiconductor chip mounted on a main surface of the wiring board, a sealant which seals the whole of an upper surface of the wiring board, and a nickel (Ni) plating film formed on an upper surface of the sealant is provided. The Ni plating film is formed on a palladium (Pd) pretreatment layer formed on the upper surface of the sealant with using high-pressure CO2 in a state of protecting a back surface of the wiring board, and is electrically connected with an end portion of a ground wiring layer of the wiring board or a ground (GND) connection through-hole connected with the end portion of the ground wiring layer.

摘要翻译： 一种屏蔽电子元件，包括布线板，安装在所述布线板的主表面上的至少一个半导体芯片，密封所述布线板的整个上表面的密封剂和形成在所述布线板上的镍（Ni） 提供密封剂的上表面。 在保护接线板的背面的状态下，使用高压CO 2形成在密封剂的上表面上的钯（Pd）预处理层上形成Ni镀膜，并与 布线板的接地布线层或与接地布线层的端部连接的接地（GND）连接通孔。

公开(公告)号：US20070176298A1

公开(公告)日：2007-08-02

申请号：US11652235

申请日：2007-01-10

申请人： Yasuo Osone ,  Kenya Kawano ,  Chiko Yorita ,  Yu Hasegawa ,  Yuji Shirai ,  Naotaka Tanaka ,  Seiichi Tomoi ,  Hiroshi Okabe

发明人： Yasuo Osone ,  Kenya Kawano ,  Chiko Yorita ,  Yu Hasegawa ,  Yuji Shirai ,  Naotaka Tanaka ,  Seiichi Tomoi ,  Hiroshi Okabe

IPC分类号： H01L23/52 ,  H01L23/48

CPC分类号： H01L23/3677 ,  H01L23/3121 ,  H01L23/34 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2223/6644 ,  H01L2223/6688 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1515 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2224/48237 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Heating elements different in heat generating timing are laminated in a stacked state, and the heating element close to a wiring substrate is allowed to function as a heat diffusion plate for another heating element.

摘要翻译： 发热时刻不同的加热元件层叠在堆叠状态，允许靠近布线基板的加热元件用作另一个加热元件的热​​扩散板。

公开(公告)号：US06946327B2

公开(公告)日：2005-09-20

申请号：US10771471

申请日：2004-02-05

申请人： Toshio Miyamoto ,  Ichiro Anjo ,  Asao Nishimura ,  Mitsuaki Katagiri ,  Yuji Shirai ,  Yoshihide Yamaguchi

发明人： Toshio Miyamoto ,  Ichiro Anjo ,  Asao Nishimura ,  Mitsuaki Katagiri ,  Yuji Shirai ,  Yoshihide Yamaguchi

IPC分类号： H01L21/3205 ,  H01L21/312 ,  H01L21/66 ,  H01L21/822 ,  H01L23/12 ,  H01L23/31 ,  H01L23/48 ,  H01L23/52 ,  H01L23/538 ,  H01L27/04 ,  H01L21/44

CPC分类号： H01L22/22 ,  H01L23/3114 ,  H01L23/5382 ,  H01L24/13 ,  H01L2223/54406 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05548 ,  H01L2224/05571 ,  H01L2224/11 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05147 ,  H01L2224/05171

摘要： A semiconductor integrated circuit device includes a semiconductor substrate, a circuit element formed on one major surface of the semiconductor substrate and constituting an integrated circuit having a plurality of functions or a plurality of characteristics, an internal connection terminal, connected to the integrated circuit, for selecting one of the plurality of functions or one of the characteristics in the integrated circuit, an insulating layer covering the internal connection terminal such that the internal connection terminal is selectively exposed, and an external connection terminal arranged on the insulating layer. One of the plurality of functions or one of the plurality of characteristics is selected by a connection state between the internal connection terminal and the external connection terminal.

摘要翻译： 半导体集成电路器件包括半导体衬底，形成在半导体衬底的一个主表面上并构成具有多个功能或多个特性的集成电路的电路元件，连接到集成电路的内部连接端子，用于 选择所述集成电路中的多种功能或特性之一，覆盖所述内部连接端子以使得内部连接端子被选择性地暴露的绝缘层和布置在所述绝缘层上的外部连接端子。 通过内部连接端子和外部连接端子之间的连接状态来选择多个功能中的一个或多个特性之一。