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公开(公告)号：US20130156060A1
公开(公告)日：2013-06-20
申请号：US13707911
申请日：2012-12-07
IPC分类号： H01S5/22
CPC分类号： H01S5/2206 , B82Y20/00 , H01S5/0425 , H01S5/2009 , H01S5/22 , H01S5/3202 , H01S5/34333 , H01S2301/176
摘要： A laser diode device includes: a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; an epitaxial layer including a light emitting layer, the epitaxial layer being formed on the semi-polar surface of the semiconductor substrate, and the epitaxial layer including a ridge section; a first electrode formed on a top surface of the ridge section; an insulating layer covering the epitaxial layer in an adjacent region of the ridge section and a side surface of the ridge section, the insulating layer covering part or all of side surfaces of the first electrode continuously from the epitaxial layer; a pad electrode formed to cover a top surface of the first electrode and the insulating layer, the pad electrode being electrically connected to the first electrode; and a second electrode formed on a surface, of the semiconductor substrate, opposite to the semi-polar surface.
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公开(公告)号：US11245245B2
公开(公告)日：2022-02-08
申请号：US16613568
申请日：2019-03-05
发明人： Yohei Enya , Shinya Ito , Hiromi Nakanishi , Takashi Kyono
IPC分类号： H01S5/02255 , H01S5/02253 , G02B26/08 , G02B26/10 , H01S5/40
摘要： An optical module includes a light-forming unit configured to form light, and a protective member surrounding and sealing the light-forming unit. The light-forming unit includes a base member including an electronic temperature control module, a plurality of laser diodes arranged on the base member, a filter arranged on the base member and configured to multiplex light from the plurality of laser diodes, a beam shaping portion arranged on the base member and configured to convert a beam shape of the light multiplexed by the filter, and a MEMS arranged on the base member and including a scanning mirror configured to scan the light shaped in the beam shaping portion. The protective member includes a base body, and a lid welded to the base body.
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公开(公告)号：US10333270B2
公开(公告)日：2019-06-25
申请号：US15716085
申请日：2017-09-26
发明人： Takashi Kyono , Hideyuki Ijiri , Takao Nakamura , Hiromi Nakanishi , Takatoshi Ikegami , Kuniaki Ishihara , Yohei Enya , Tetsuya Kumano
摘要： An optical module 1 according to an embodiment includes a plurality of laser diodes (LDs) 21 to 23, a multiplexing optical system 30 combining a plurality of laser beams from the respective plurality of LDs, and a package 10 accommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.
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公开(公告)号：US10326034B2
公开(公告)日：2019-06-18
申请号：US16073006
申请日：2017-01-24
IPC分类号： H01L31/0328 , H01L31/0304 , H01L31/101 , H01L31/0352 , H01L31/105 , H01L27/146 , H01L31/109 , H01L31/18
摘要： A semiconductor layer includes a first semiconductor layer containing a III-V group compound semiconductor and having a first conductivity type, a quantum-well structure containing a III-V group compound semiconductor, a second semiconductor layer containing a III-V group compound semiconductor, a third semiconductor layer containing a III-V group compound semiconductor, and a fourth semiconductor layer containing a III-V group compound semiconductor and having a second conductivity type different from the first conductivity type. The first semiconductor layer, the quantum-well structure, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer are stacked in this order. The concentration of an impurity that generates carriers of the second conductivity type is lower in the third semiconductor layer than in the fourth semiconductor layer. The concentration of an impurity that generates majority carriers in the second semiconductor layer is lower in the third semiconductor layer than in the second semiconductor layer.
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公开(公告)号：US09887310B2
公开(公告)日：2018-02-06
申请号：US15114001
申请日：2015-01-19
发明人： Katsushi Akita , Kei Fujii , Takashi Kyono , Koji Nishizuka , Kaoru Shibata
IPC分类号： H01L31/109 , H01L31/02 , H01L21/18 , H01L21/02 , H01L29/06 , C30B29/40 , H01L31/0304 , H01L31/0352 , H01L31/105 , H01L31/0224 , H01L31/0392 , H01L31/18
CPC分类号： H01L31/109 , C30B29/40 , H01L21/02387 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/06 , H01L31/022408 , H01L31/03046 , H01L31/035236 , H01L31/0392 , H01L31/105 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A semiconductor layered structure includes a substrate formed of a III-V compound semiconductor, a buffer layer disposed on and in contact with the substrate and formed of a III-V compound semiconductor, and a quantum well layer disposed on and in contact with the buffer layer and including a plurality of component layers formed of III-V compound semiconductors. The substrate has a diameter of 55 mm or more. At least one of the component layers is formed of a mixed crystal of three or more elements. When the compound semiconductor forming the substrate has a lattice constant d1, the compound semiconductor forming the buffer layer has a lattice constant d2, and the compound semiconductors forming the quantum well layer have an average lattice constant d3, (d2−d1)/d1 is −3×10−3 or more and 3×10−3 or less, and (d3−d1)/d1 is −3×10−3 or more and 3×10−3 or less.
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公开(公告)号：US09773932B2
公开(公告)日：2017-09-26
申请号：US15028225
申请日：2014-08-18
发明人： Kei Fujii , Koji Nishizuka , Takashi Kyono , Kaoru Shibata , Katsushi Akita
IPC分类号： H01L21/00 , H01L31/00 , H01L31/0352 , H01L21/02 , H01L31/0304 , H01L31/18
CPC分类号： H01L31/035236 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/02546 , H01L21/0262 , H01L31/03042 , H01L31/03046 , H01L31/1832 , Y02E10/544 , Y02P70/521
摘要： An epitaxial wafer which allows manufacture of a photodiode having suppressed dark current and ensured sensitivity, and a method for manufacturing the epitaxial wafer, are provided. The epitaxial wafer of the present invention includes: a III-V semiconductor substrate; and a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a first layer and a second layer. The total concentration of elements contained as impurities in the multiple quantum well structure is less than or equal to 5×1015 cm−3.
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公开(公告)号：US20170141531A1
公开(公告)日：2017-05-18
申请号：US15354699
申请日：2016-11-17
发明人： Takashi Kyono , Hideyuki Ijiri , Takao Nakamura , Hiromi Nakanishi , Takatoshi Ikegami , Kuniaki Ishihara , Yohei Enya , Tetsuya Kumano
CPC分类号： H01S5/022 , G02B6/00 , G02B6/4239 , G02B6/4251 , G02B6/4265 , H01S5/005 , H01S5/02212 , H01S5/02216 , H01S5/0222 , H01S5/02252 , H01S5/0226 , H01S5/0228 , H01S5/02288 , H01S5/02292 , H01S5/02415 , H01S5/4012 , H01S5/4093
摘要： An optical module 1 according to an embodiment includes a plurality of laser diodes (LDs) 21 to 23, a multiplexing optical system 30 combining a plurality of laser beams from the respective plurality of LDs, and a package 10 accommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the plurality of LDs and the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.
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公开(公告)号：US20170040477A1
公开(公告)日：2017-02-09
申请号：US15304805
申请日：2014-12-17
发明人： Suguru Arikata , Takashi Kyono , Koji Nishizuka , Kaoru Shibata , Katsushi Akita
IPC分类号： H01L31/0352 , H01L31/18 , H01L31/0224 , H01L31/0216 , H01L31/0304 , H01L31/109
CPC分类号： H01L31/035236 , H01L31/02161 , H01L31/022408 , H01L31/03042 , H01L31/03046 , H01L31/109 , H01L31/1844 , Y02E10/544
摘要： A semiconductor layered structure according to the present invention includes a substrate formed of a III-V compound semiconductor; and semiconductor layers disposed on the substrate and formed of III-V compound semiconductors. The substrate has a majority-carrier-generating impurity concentration of 1×1017 cm−3 or more and 2×1020 cm−3 or less, and the impurity has an activation ratio of 30% or more.
摘要翻译： 根据本发明的半导体层状结构包括由III-V族化合物半导体形成的衬底; 以及设置在基板上并由III-V族化合物半导体形成的半导体层。 基板的多数载流子产生杂质浓度为1×1017cm-3以上且2×1020cm-3以下，杂质的活化率为30％以上。
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公开(公告)号：US20160247951A1
公开(公告)日：2016-08-25
申请号：US15028225
申请日：2014-08-18
发明人： Kei Fujii , Koji Nishizuka , Takashi Kyono , Kaoru Shibata , Katsushi Akita
IPC分类号： H01L31/0352 , H01L31/0304 , H01L31/18 , H01L21/02
CPC分类号： H01L31/035236 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/02546 , H01L21/0262 , H01L31/03042 , H01L31/03046 , H01L31/1832 , Y02E10/544 , Y02P70/521
摘要： An epitaxial wafer which allows manufacture of a photodiode having suppressed dark current and ensured sensitivity, and a method for manufacturing the epitaxial wafer, are provided. The epitaxial wafer of the present invention includes: a III-V semiconductor substrate; and a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a first layer and a second layer. The total concentration of elements contained as impurities in the multiple quantum well structure is less than or equal to 5×1015 cm−3.
摘要翻译： 提供了允许制造抑制暗电流并确保灵敏度的光电二极管的外延晶片以及制造外延晶片的方法。 本发明的外延晶片包括：III-V族半导体衬底; 以及设置在所述衬底上的多量子阱结构，并且包括多对第一层和第二层。 在多量子阱结构中作为杂质含有的元素的总浓度小于或等于5×1015cm-3。
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30.发明授权Group III nitride semiconductor device, p-type contact structure, and method for fabricating group III nitride semiconductor device 有权III族氮化物半导体器件，p型接触结构以及III族氮化物半导体器件的制造方法公开(公告)号：US09379523B2
公开(公告)日：2016-06-28
申请号：US14643059
申请日：2015-03-10
发明人： Yohei Enya , Takashi Kyono , Masaki Ueno , Takao Nakamura , Takashi Matsuura , Tatsushi Hamaguchi , Yuji Furushima
IPC分类号： H01S5/343 , H01L21/66 , H01L33/00 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/36 , H01L29/20 , H01L29/205 , H01L29/66 , H01L29/737 , H01L21/02 , H01S5/042 , H01S5/32 , H01S5/30
CPC分类号： H01S5/34333 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L22/14 , H01L22/20 , H01L29/2003 , H01L29/205 , H01L29/66242 , H01L29/737 , H01L33/0025 , H01L33/0045 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/36 , H01L2933/0016 , H01S5/0421 , H01S5/0425 , H01S5/3063 , H01S5/3202
摘要： A Group III nitride semiconductor device comprises: a Group III nitride semiconductor layer having a primary surface, inclined with respect to a c-plane of the Group III nitride semiconductor at an angle in a range of 50 degrees or more and 80 degrees or less, of a Group III nitride semiconductor; a p-type Group III nitride semiconductor laminate including first to third p-type Group III nitride semiconductor layers, the first to third p-type Group III nitride semiconductor layers being provided on the primary surface of the Group III nitride semiconductor layer, the first and third p-type Group III nitride semiconductor layers sandwiching the second p-type Group III nitride semiconductor layer such that the second p-type Group III nitride semiconductor layer incorporates strain; and an electrode provided on the p-type Group III nitride semiconductor laminate. The electrode is in contact with the first p-type Group III nitride semiconductor layer.
摘要翻译： III族氮化物半导体器件包括：具有主表面的III族氮化物半导体层，相对于III族氮化物半导体的c面在50度以上且80度以下的范围内倾斜， 的III族氮化物半导体; 包括第一至第三p型III族氮化物半导体层的p型III族氮化物半导体层叠体，在III族氮化物半导体层的主表面上设置第一至第三p型III族氮化物半导体层， 以及夹持所述第二p型III族氮化物半导体层的第三p型III族氮化物半导体层，使得所述第二p型III族氮化物半导体层包含应变; 以及设置在p型III族氮化物半导体层叠体上的电极。 电极与第一p型III族氮化物半导体层接触。
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