公开(公告)号：US5574289A

公开(公告)日：1996-11-12

申请号：US24084

申请日：1993-03-01

申请人： Masahiro Aoki ,  Hirohisa Sano ,  Shinji Sakano ,  Makoto Suzuki ,  Makoto Takahashi ,  Kazuhisa Uomi ,  Tatemi Ido ,  Atsushi Takai

发明人： Masahiro Aoki ,  Hirohisa Sano ,  Shinji Sakano ,  Makoto Suzuki ,  Makoto Takahashi ,  Kazuhisa Uomi ,  Tatemi Ido ,  Atsushi Takai

IPC分类号： G02F1/017 ,  H01L31/0352 ,  H01L33/00 ,  H01S5/026 ,  H01S5/10 ,  H01S5/12 ,  H01S5/227 ,  H01S5/34 ,  H01S5/343 ,  H01S5/40 ,  H01S5/50 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： B82Y20/00 ,  G02F1/01708 ,  H01L31/035236 ,  H01L33/0062 ,  H01S5/0265 ,  H01S5/227 ,  H01S5/34 ,  G02F2203/07 ,  H01S5/026 ,  H01S5/10 ,  H01S5/106 ,  H01S5/12 ,  H01S5/2272 ,  H01S5/3404 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/4068 ,  H01S5/5036

摘要： Disclosed is a semiconductor optical integrated device and method of fabricating the device, the device having a plurality of quantum well structures, formed on a single substrate, acting as optical waveguides, the plurality of quantum well structures respectively having different lattice mismatches with the substrate and/or different strains (e.g., respectively compressive strain and tensile strain). The method includes selectively depositing the quantum well structures by, e.g., organometallic vapor phase epitaxy on growth regions of the substrate, the growth regions being defined by insulating layer patterning masks, with a width of the growth regions and/or a width of the patterning mask being different for the different quantum well structures. Each quantum well structure includes quantum well layers of III-V or II-VI compound semiconductor material, the Group III or Group II elements each including at least two elements, one having a relatively large atomic diameter and another having a relatively small atomic diameter. Also disclosed is a light receiver that can independently absorb TE-mode and TM-mode light in series, which can be used in a polarized-wave diversity receiver for coherent optical communication.

摘要翻译： 公开了一种制造该器件的半导体光学集成器件和方法，该器件具有多个量子阱结构，形成在单个衬底上，作为光波导，多个量子阱结构分别与衬底具有不同的晶格错配; /或不同的应变（例如，分别为压缩应变和拉伸应变）。 该方法包括通过例如在衬底的生长区域上的有机金属气相外延选择性地沉积量子阱结构，生长区域由绝缘层图案化掩模限定，具有生长区域的宽度和/或图案化宽度 掩模对于不同的量子阱结构是不同的。 每个量子阱结构包括III-V或II-VI族化合物半导体材料的量子阱层，III族或II族元素各自包含至少两种元素，一种具有较大的原子直径，另一种具有较小的原子直径。 还公开了可以独立地吸收串联的TE模式和TM模式光的光接收器，其可以用于用于相干光通信的偏振波分集接收器中。

公开(公告)号：US5394491A

公开(公告)日：1995-02-28

申请号：US232403

申请日：1994-04-25

申请人： Hiroaki Inoue ,  Kazuhisa Uomi ,  Koji Ishida

发明人： Hiroaki Inoue ,  Kazuhisa Uomi ,  Koji Ishida

IPC分类号： G02F1/313 ,  H01S5/50 ,  H04Q11/00 ,  G02B6/26

CPC分类号： G02F1/3138 ,  H01S5/50 ,  H04Q11/0005 ,  H04Q2011/0015 ,  H04Q2011/0041 ,  H04Q2011/0052

摘要： A semiconductor optical switch and an optical switch array for use in an optical logic circuit, photonic switching, OEIC, etc., wherein a light amplifying means is provided on a bypass waveguide that connects a plurality of optical waveguides, thereby enabling improvement of the light crosstalk and the light propagation loss. In particular, according to the arrangement of the present invention that a light amplifying means is provided in addition to the deflecting portion, no noise component is amplified and therefore the SN ratio is markedly increased.

摘要翻译： 一种用于光逻辑电路，光子切换，OEIC等的半导体光开关和光开关阵列，其中在连接多个光波导的旁路波导上设置有光放大装置，从而能够改善光 串扰和光传播损耗。 特别地，根据本发明的配置，除了偏转部分之外还提供了光放大装置，没有放大噪声分量，因此SN比显着增加。

公开(公告)号：US07409113B2

公开(公告)日：2008-08-05

申请号：US11019370

申请日：2004-12-23

申请人： Seiji Sumi ,  Kazuhisa Uomi ,  Hiroyuki Kamiyama ,  Kazuhiko Naoe

发明人： Seiji Sumi ,  Kazuhisa Uomi ,  Hiroyuki Kamiyama ,  Kazuhiko Naoe

IPC分类号： G02F1/035 ,  G02F1/295 ,  G02B6/12

CPC分类号： B82Y20/00 ,  G02F1/01708 ,  G02F2203/21

摘要： This invention provides an optical transmitter module and an optical module using an EA modulator capable of realizing stable ACER regardless of operating temperature without using a control mechanism for maintaining temperature of the EA modulator constant. In the EA modulator, optical waveguides formed of a multi-layered film are formed on a substrate, an electrical signal is applied to the optical waveguides in a direction vertical to the substrate, and the input light absorption amount is changed to control the amount of output light. Also, a plurality of p-side electrodes electrically separated from each other for applying an electrical signal to the active layer optical waveguides are arranged on optical axes of active layer optical waveguides. The length of optical waveguides to which the electrical signal is applied is changed by controlling the number of p-side electrodes to which the electrical signal is applied in accordance with temperature.

摘要翻译： 本发明提供了一种使用EA调制器的光发射机模块和光模块，其能够在不使用用于保持EA调制器的温度恒定的控制机制的情况下，无论操作温度如何，都能实现稳定的ACER。 在EA调制器中，在基板上形成由多层膜形成的光波导，在垂直于基板的方向上向光波导施加电信号，并且改变输入光吸收量， 输出光。 此外，在有源层光波导的光轴上配置有多个彼此电隔离用于向有源层光波导施加电信号的p侧电极。 通过根据温度控制施加电信号的p侧电极的数量来改变施加电信号的光波导的长度。

公开(公告)号：US06678479B1

公开(公告)日：2004-01-13

申请号：US09516912

申请日：2000-03-01

申请人： Kazuhiko Naoe ,  Kazuhisa Uomi ,  Masahiro Aoki ,  Minoru Fujita

发明人： Kazuhiko Naoe ,  Kazuhisa Uomi ,  Masahiro Aoki ,  Minoru Fujita

IPC分类号： H04B1006

CPC分类号： H01S5/0265 ,  H01S5/2077 ,  H01S5/2272 ,  H04B10/5051

摘要： For achieving a transmission light source having different transmission properties or characteristics, i.e., the a parameters, depending upon application thereof, in a light emission element of semiconductor EA modulator integrated type being constructed with a light emission portion for lasing with a single vertical mode and a plurality of EA modulators, wherein an absorption edge wavelength under the condition of applying no bias thereto, in the semiconductor multiple-quantum-well structure owned by the modulator which is near to an emission side of the light emission portion, is to be equal or longer than the absorption edge wavelength owned by the modulator positioned far from the emission side of the light emission portion.

摘要翻译： 为了实现具有不同透射特性或特性的传输光源，即根据其应用的参数，在半导体EA调制器集成型的发光元件中构造有用于以单个垂直模式激光的发光部分，以及 在靠近发光部的发射侧的调制器所拥有的半导体多量子阱结构中，在不施加偏压的条件下的吸收边缘波长的多个EA调制器将相等 或比由位于远离发光部分的发射侧的调制器所拥有的吸收边缘波长更长。

公开(公告)号：USRE38072E1

公开(公告)日：2003-04-08

申请号：US09924504

申请日：2001-08-09

申请人： Masahiko Kondo ,  Kazuhisa Uomi ,  Hitoshi Nakamura

发明人： Masahiko Kondo ,  Kazuhisa Uomi ,  Hitoshi Nakamura

IPC分类号： H01L2120

CPC分类号： H01L33/30 ,  B82Y20/00 ,  H01L21/02381 ,  H01L21/02392 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02507 ,  H01L21/02538 ,  H01L21/0262 ,  H01L27/0605 ,  H01L27/1446 ,  H01L27/15 ,  H01L31/03048 ,  H01L31/107 ,  H01L31/125 ,  H01L33/007 ,  H01S5/021 ,  H01S5/32366 ,  H01S5/32375 ,  H01S5/3434 ,  Y02E10/544

摘要： A fabrication process for a semiconductor device including a plurality of semiconductor layers, the plurality of semiconductor layers including at least a nitrogen-containing alloy semiconductor AlaGabIn1-a-bNxPyAszSb1-x-y-z (0≦a≦1, 0≦b≦1, 0

摘要翻译： 一种包括多个半导体层的半导体器件的制造工艺，所述多个半导体层至少包括含氮合金半导体AlaGabIn1-a-bNxPyAszSb1-xyz（0≤a≤1,0<= b < 1，0

公开(公告)号：US5912913A

公开(公告)日：1999-06-15

申请号：US769789

申请日：1996-12-19

申请人： Masahiko Kondow ,  Kazunori Shinoda ,  Kazuhisa Uomi ,  Shinji Nishimura

发明人： Masahiko Kondow ,  Kazunori Shinoda ,  Kazuhisa Uomi ,  Shinji Nishimura

IPC分类号： H01S5/026 ,  H01S5/183 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H01S5/42 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/18341 ,  H01S2301/176 ,  H01S5/0224 ,  H01S5/0261 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/18369 ,  H01S5/32366 ,  H01S5/34306 ,  H01S5/423

摘要： Disclosed is a vertical cavity surface emitting laser providing mirrors at least one of which has a high reflectivity to be obtained with a small number of pairs each comprising a semiconductor low-refractivity layer and a semiconductor high-refractivity layer, (1) in which GaAs is used for a substrate and Al, In and P are used as main elements for making the low-refractivity layers lattice-matching the GaAs substrate; (2) in which Ga, In, N and As are used as main elements of the high-refractivity layers; (3) in which GaAs is used for a substrate, Ga, In, N and As are used as main elements for making an active layer and the mirrors lattice-match the GaAs substrate.

摘要翻译： 公开了一种垂直空腔表面发射激光器，其提供反射镜，其中至少一个反射率具有较小的反射率，每个对包含半导体低折射率层和半导体高折射率层，（1）其中GaAs 用作衬底，Al，In和P用作使低折射率层与GaAs衬底晶格匹配的主要元件; （2）其中Ga，In，N和As用作高折射率层的主要元素; （3）其中使用GaAs用于衬底，Ga，In，N和As用作制造有源层的主要元件，并且镜与GaAs衬底晶格匹配。

公开(公告)号：US5666455A

公开(公告)日：1997-09-09

申请号：US713867

申请日：1996-09-13

申请人： Masahiro Aoki ,  Tatemi Ido ,  Takayuki Tsutsui ,  Kazuhisa Uomi ,  Tomonobu Tsuchiya ,  Makoto Okai ,  Atsushi Nakamura

发明人： Masahiro Aoki ,  Tatemi Ido ,  Takayuki Tsutsui ,  Kazuhisa Uomi ,  Tomonobu Tsuchiya ,  Makoto Okai ,  Atsushi Nakamura

IPC分类号： G02B6/10 ,  G02B6/12 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/40

CPC分类号： H01S5/22 ,  G02B6/10 ,  G02B2006/12097 ,  G02B2006/12107 ,  G02B2006/12121 ,  G02B2006/12142 ,  G02B2006/12176 ,  H01S5/12 ,  H01S5/209 ,  H01S5/4025

摘要： A waveguide device includes an indium phosphide substrate, an active layer formed on the indium phosphide substrate, and a cladding layer formed on the active layer, the cladding layer having a ridge structure the side wall of which is configured into a reversed mesa form.

摘要翻译： 波导器件包括铟磷化物衬底，形成在磷化铟衬底上的有源层和形成在有源层上的覆层，所述覆层具有其侧壁被构造成反向台面形式的脊结构。

公开(公告)号：US20050275920A1

公开(公告)日：2005-12-15

申请号：US11019370

申请日：2004-12-23

申请人： Seiji Sumi ,  Kazuhisa Uomi ,  Hiroyuki Kamiyama ,  Kazuhiko Naoe

发明人： Seiji Sumi ,  Kazuhisa Uomi ,  Hiroyuki Kamiyama ,  Kazuhiko Naoe

IPC分类号： G02F1/017 ,  G02F1/03 ,  G02F1/07 ,  H01S5/022 ,  H01S5/026

CPC分类号： B82Y20/00 ,  G02F1/01708 ,  G02F2203/21

摘要： This invention provides an optical transmitter module and an optical module using an EA modulator capable of realizing stable ACER regardless of operating temperature without using a control mechanism for maintaining temperature of the EA modulator constant. In the EA modulator, optical waveguides formed of a multi-layered film are formed on a substrate, an electrical signal is applied to the optical waveguides in a direction vertical to the substrate, and the input light absorption amount is changed to control the amount of output light. Also, a plurality of p-side electrodes electrically separated from each other for applying an electrical signal to the active layer optical waveguides are arranged on optical axes of active layer optical waveguides. The length of optical waveguides to which the electrical signal is applied is changed by controlling the number of p-side electrodes to which the electrical signal is applied in accordance with temperature.

摘要翻译： 本发明提供了一种使用EA调制器的光发射机模块和光模块，其能够在不使用用于保持EA调制器的温度恒定的控制机制的情况下，无论操作温度如何，都能实现稳定的ACER。 在EA调制器中，在基板上形成由多层膜形成的光波导，在垂直于基板的方向上向光波导施加电信号，并且改变输入光吸收量， 输出光。 此外，在有源层光波导的光轴上配置有多个彼此电隔离用于向有源层光波导施加电信号的p侧电极。 通过根据温度控制施加电信号的p侧电极的数量来改变施加电信号的光波导的长度。

公开(公告)号：US06546034B2

公开(公告)日：2003-04-08

申请号：US09748175

申请日：2000-12-27

申请人： Masaaki Komori ,  Masahiro Aoki ,  Kazuhisa Uomi ,  Kazuhiko Hosomi

发明人： Masaaki Komori ,  Masahiro Aoki ,  Kazuhisa Uomi ,  Kazuhiko Hosomi

IPC分类号： H01S500

CPC分类号： H01S5/2231 ,  H01S5/2063 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2224

摘要： A semiconductor laser device includes a semiconductor substrate, a first cladding region on one side of the semiconductor substrate, an active layer region, and a second cladding region disposed on an opposite side of the semiconductor substrate. The active layer region is disposed between the semiconductor substrate and the second cladding region. A first semiconductor region is provided on either side of the active layer region in parallel with a traveling direction of light in the active layer region and has an electric resistance higher than that of the active layer region and a refractive index higher than that of the semiconductor substrate. An insulative or semi-insulative second semiconductor region is formed between the first semiconductor region and part of the second cladding region. A first electrode and a second electrode are provided for injecting a current into the active layer region.

摘要翻译： 半导体激光器件包括半导体衬底，半导体衬底的一侧上的第一包层区域，有源层区域和设置在半导体衬底的相对侧上的第二覆盖区域。 有源层区域设置在半导体衬底和第二覆盖区域之间。 第一半导体区域与有源层区域中的光的行进方向平行地设置在有源层区域的两侧，并且具有比有源层区域高的电阻，并且具有比半导体的折射率高的折射率 基质。 在第一半导体区域和第二包层区域的一部分之间形成绝缘或半绝缘的第二半导体区域。 提供第一电极和第二电极用于将电流注入到有源层区域中。

公开(公告)号：US5146513A

公开(公告)日：1992-09-08

申请号：US684378

申请日：1991-04-12

申请人： Hiroaki Inoue ,  Kazuhisa Uomi ,  Koji Ishida

发明人： Hiroaki Inoue ,  Kazuhisa Uomi ,  Koji Ishida

IPC分类号： G02F1/313 ,  G02F1/35 ,  H01S5/50 ,  H04Q11/00

CPC分类号： G02F1/3138 ,  H01S5/50 ,  H04Q11/0005 ,  H04Q2011/0015 ,  H04Q2011/0041 ,  H04Q2011/0052

摘要： A semiconductor optical device and an optical device array is provided which can be used in an optical logic circuit, photonic switching OEIB, etc. The device includes a light amplifying arrangement provided on a bypass wavelength that connects a plurality of optical waveguides, thereby enabling improvement of the light crosstalk and the light propagation loss. In particular, by virtue of providing a light amplifying means in addition to the light deflecting portion, noise components are not amplified, and, therefore, the SN radio is markedly increased.

摘要翻译： 提供了可用于光逻辑电路，光子开关OEIB等的半导体光学器件和光学器件阵列。该器件包括在连接多个光波导的旁路波长上提供的光放大装置，从而能够改善 的光串扰和光传播损耗。 特别地，通过除了光偏转部分之外提供光放大装置，噪声分量不被放大，因此，SN无线电显着增加。