公开(公告)号：US20170271276A1

公开(公告)日：2017-09-21

申请号：US15461334

申请日：2017-03-16

Applicant: XINTEC INC.

Inventor： Yen-Shih HO ,  Chia-Sheng LIN ,  Po-Han LEE ,  Wei-Luen SUEN

IPC: H01L23/00 ,  H01L23/58 ,  H01L23/544

CPC classification number: H01L23/562 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/544 ,  H01L23/585 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/5446 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/13024

Abstract: A chip package including a substrate that has a first surface and a second surface opposite thereto is provided. The substrate includes a chip region and a scribe line region that extends along the edge of the chip region. The chip package further includes a dielectric layer disposed on the first surface of the substrate. The dielectric layer corresponding to the scribe line region has a through groove that extends along the extending direction of the scribe line region. A method of forming the chip package is also provided.

公开(公告)号：US20150179831A1

公开(公告)日：2015-06-25

申请号：US14640307

申请日：2015-03-06

Applicant: XINTEC INC.

Inventor： Wei-Luen SUEN ,  Wei-Ming CHIEN ,  Po-Han LEE ,  Tsang-Yu LIU ,  Yen-Shih HO

IPC: H01L31/0232 ,  H01L31/028 ,  H01L31/0236 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/02327 ,  H01L21/561 ,  H01L23/3114 ,  H01L31/02002 ,  H01L31/0203 ,  H01L31/02363 ,  H01L31/1804 ,  H01L2224/11

Abstract: A semiconductor structure includes a silicon substrate, a protection layer, an electrical pad, an isolation layer, a redistribution layer, a conductive layer, a passivation layer, and a conductive structure. The silicon substrate has a concave region, a step structure, a tooth structure, a first surface, and a second surface opposite to the first surface. The step structure and the tooth structure surround the concave region. The step structure has a first oblique surface, a third surface, and a second oblique surface facing the concave region and connected in sequence. The protection layer is located on the first surface of the silicon substrate. The electrical pad is located in the protection layer and exposed through the concave region. The isolation layer is located on the first and second oblique surfaces, the second and third surfaces of the step structure, and the tooth structure.

Abstract translation: 半导体结构包括硅衬底，保护层，电焊盘，隔离层，再分配层，导电层，钝化层和导电结构。 硅基板具有凹形区域，台阶结构，齿结构，第一表面和与第一表面相对的第二表面。 台阶结构和齿结构围绕凹区域。 台阶结构具有第一倾斜表面，第三表面和面对凹入区域并且依次连接的第二倾斜表面。 保护层位于硅衬底的第一表面上。 电焊盘位于保护层中，并通过凹面露出。 隔离层位于第一和第二倾斜表面，台阶结构的第二和第三表面以及齿结构上。

公开(公告)号：US20140332983A1

公开(公告)日：2014-11-13

申请号：US14339341

申请日：2014-07-23

Applicant: XINTEC INC.

Inventor： Yen-Shih HO ,  Tsang-Yu LIU ,  Shu-Ming CHANG ,  Yu-Lung HUANG ,  Chao-Yen LIN ,  Wei-Luen SUEN ,  Chien-Hui CHEN

IPC: H01L23/00 ,  H01L23/31

CPC classification number: H01L24/49 ,  G06K9/00053 ,  H01L21/561 ,  H01L23/3121 ,  H01L23/3192 ,  H01L23/525 ,  H01L23/5329 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0657 ,  H01L29/0657 ,  H01L2224/02381 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/05687 ,  H01L2224/0569 ,  H01L2224/06135 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/43 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48599 ,  H01L2224/48611 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48669 ,  H01L2224/48687 ,  H01L2224/4869 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/10156 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/146 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: A stacked chip package including a device substrate having an upper surface, a lower surface and a sidewall is provided. The device substrate includes a sensing region or device region, a signal pad region and a shallow recess structure extending from the upper surface toward the lower surface along the sidewall. A redistribution layer is electrically connected to the signal pad region and extends into the shallow recess structure. A wire has a first end disposed in the shallow recess structure and electrically connected to the redistribution layer, and a second end electrically connected to a first substrate and/or a second substrate disposed under the lower surface. A method for forming the stacked chip package is also provided.

Abstract translation: 提供了包括具有上表面，下表面和侧壁的器件衬底的堆叠芯片封装。 器件衬底包括感测区域或器件区域，信号焊盘区域和沿着侧壁从上表面向下表面延伸的浅凹陷结构。 再分配层电连接到信号焊盘区域并延伸到浅凹陷结构中。 电线具有设置在浅凹陷结构中并电连接到再分布层的第一端，以及电连接到设置在下表面下方的第一基板和/或第二基板的第二端。 还提供了一种用于形成堆叠芯片封装的方法。

公开(公告)号：US20140332908A1

公开(公告)日：2014-11-13

申请号：US14339360

申请日：2014-07-23

Applicant: XINTEC INC.

Inventor： Yen-Shih HO ,  Tsang-Yu LIU ,  Shu-Ming CHANG ,  Yu-Lung HUANG ,  Chao-Yen LIN ,  Wei-Luen SUEN ,  Chien-Hui CHEN ,  Ho-Yin YIU

IPC: H01L23/48 ,  H01L21/56 ,  H01L21/768 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L21/76802 ,  G06K9/00053 ,  H01L21/561 ,  H01L21/76877 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/3192 ,  H01L23/525 ,  H01L23/5329 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/02381 ,  H01L2224/024 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/05687 ,  H01L2224/0569 ,  H01L2224/06135 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48611 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48669 ,  H01L2224/48687 ,  H01L2224/4869 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/10156 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: A chip package including a chip is provided. The chip includes a sensing region or device region adjacent to an upper surface of the chip. A sensing array is located in the sensing region or device region and includes a plurality of sensing units. A plurality of first openings is located in the chip and correspondingly exposes the sensing units. A plurality of conductive extending portions is disposed in the first openings and is electrically connected to the sensing units, wherein the conductive extending portions extend from the first openings onto the upper surface of the chip. A method for forming the chip package is also provided.

Abstract translation: 提供了包括芯片的芯片封装。 芯片包括与芯片的上表面相邻的感测区域或器件区域。 感测阵列位于感测区域或设备区域中并且包括多个感测单元。 多个第一开口位于芯片中并且相应地暴露感测单元。 多个导电延伸部分设置在第一开口中并且电连接到感测单元，其中导电延伸部分从第一开口延伸到芯片的上表面上。 还提供了一种用于形成芯片封装的方法。

公开(公告)号：US20140054786A1

公开(公告)日：2014-02-27

申请号：US13964999

申请日：2013-08-12

Applicant: XINTEC INC.

Inventor： Yu-Lung HUANG ,  Chao-Yen LIN ,  Wei-Luen SUEN ,  Chien-Hui CHEN

IPC: H01L23/498 ,  H01L21/768

CPC classification number: H01L23/585 ,  H01L21/283 ,  H01L21/4853 ,  H01L21/561 ,  H01L21/6836 ,  H01L21/768 ,  H01L21/78 ,  H01L23/3121 ,  H01L23/49838 ,  H01L23/525 ,  H01L24/05 ,  H01L24/16 ,  H01L24/48 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02371 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05558 ,  H01L2224/06165 ,  H01L2224/06167 ,  H01L2224/1302 ,  H01L2224/131 ,  H01L2224/16105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24226 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/10156 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

Abstract: An embodiment of the invention provides a chip package including a semiconductor substrate having a first surface and a second surface opposite thereto. A conducting pad is located on the first surface. A side recess is on at least a first side of the semiconductor substrate, wherein the side recess extends from the first surface toward the second surface and across the entire length of the first side. A conducting layer is located on the first surface and electrically connected to the conducting pad, wherein the conducting layer extends to the side recess.

Abstract translation: 本发明的实施例提供一种芯片封装，其包括具有第一表面和与其相对的第二表面的半导体衬底。 导电垫位于第一表面上。 侧凹部位于半导体衬底的至少第一侧上，其中侧凹部从第一表面朝向第二表面延伸并跨越第一侧的整个长度。 导电层位于第一表面上并电连接到导电焊盘，其中导电层延伸到侧凹槽。