III-V Group Compound Devices with Improved Efficiency and Droop Rate
    22.
    发明申请
    III-V Group Compound Devices with Improved Efficiency and Droop Rate 有权
    具有提高效率和下降率的III-V组复合器件

    公开(公告)号:US20140077152A1

    公开(公告)日:2014-03-20

    申请号:US13616299

    申请日:2012-09-14

    IPC分类号: H01L33/06

    摘要: The present disclosure involves an illumination apparatus. The illumination apparatus includes an n-doped semiconductor compound layer, a p-doped semiconductor compound layer spaced apart from the n-doped semiconductor compound layer, and a multiple-quantum-well (MQW) disposed between the first semiconductor compound layer and the second semiconductor compound layer. The MQW includes a plurality of alternating first and second layers. The first layers of the MQW have substantially uniform thicknesses. The second layers have graded thicknesses with respect to distances from the p-doped semiconductor compound layer. A subset of the second layers located most adjacent to the p-doped semiconductor compound layer is doped with a p-type dopant. The doped second layers have graded doping concentration levels that vary with respect to distances from the p-doped semiconductor layer.

    摘要翻译: 本公开涉及一种照明装置。 照明装置包括n掺杂半导体化合物层,与n掺杂半导体化合物层间隔开的p掺杂半导体化合物层和设置在第一半导体化合物层和第二半导体化合物层之间的多量子阱(MQW) 半导体复合层。 MQW包括多个交替的第一和第二层。 MQW的第一层具有基本均匀的厚度。 第二层相对于与p掺杂半导体化合物层的距离具有渐变厚度。 位于与p掺杂半导体化合物层最相邻的第二层的子集中掺杂有p型掺杂剂。 掺杂的第二层具有相对于从p掺杂半导体层的距离而变化的渐变掺杂浓度水平。

    Light-emitting diode with textured substrate
    23.
    发明授权
    Light-emitting diode with textured substrate 有权
    具纹理衬底的发光二极管

    公开(公告)号:US08659033B2

    公开(公告)日:2014-02-25

    申请号:US13267701

    申请日:2011-10-06

    摘要: A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.

    摘要翻译: 提供了一种发光二极管(LED)装置。 LED装置已经凸起形成在基板上的半导体区域。 在凸起的半导体区域上形成LED结构,使得LED器件的底部接触层和有源层是保形层。 顶部接触层具有平坦的表面。 在一个实施例中,顶部接触层在多个凸起的半导体区域上是连续的,而底部接触层和有源层在相邻凸起的半导体区域之间是不连续的。

    Methods of fabricating light emitting diode packages
    27.
    发明授权
    Methods of fabricating light emitting diode packages 有权
    制造发光二极管封装的方法

    公开(公告)号:US08598617B2

    公开(公告)日:2013-12-03

    申请号:US13557272

    申请日:2012-07-25

    IPC分类号: H01L33/00

    摘要: An LED array comprises a growth substrate and at least two separated LED dies grown over the growth substrate. Each of LED dies sequentially comprise a first conductive type doped layer, a multiple quantum well layer and a second conductive type doped layer. The LED array is bonded to a carrier substrate. Each of separated LED dies on the LED array is simultaneously bonded to the carrier substrate. The second conductive type doped layer of each of separated LED dies is proximate to the carrier substrate. The first conductive type doped layer of each of LED dies is exposed. A patterned isolation layer is formed over each of LED dies and the carrier substrate. Conductive interconnects are formed over the patterned isolation layer to electrically connect the at least separated LED dies and each of LED dies to the carrier substrate.

    摘要翻译: LED阵列包括生长衬底和在生长衬底上生长的至少两个分离的LED管芯。 每个LED管芯依次包括第一导电型掺杂层,多量子阱层和第二导电型掺杂层。 LED阵列结合到载体衬底。 LED阵列上的每个分离的LED管芯同时结合到载体衬底。 每个分离的LED管芯的第二导电型掺杂层靠近载体衬底。 每个LED管芯的第一导电型掺杂层被暴露。 在每个LED管芯和载体衬底上形成图案化隔离层。 导电互连形成在图案化的隔离层上,以将至少分离的LED管芯和每个LED管芯电连接到载体衬底。

    LED PACKAGING STRUCTURE HAVING IMPROVED THERMAL DISSIPATION AND MECHANICAL STRENGTH
    29.
    发明申请
    LED PACKAGING STRUCTURE HAVING IMPROVED THERMAL DISSIPATION AND MECHANICAL STRENGTH 有权
    具有改进的热释放和机械强度的LED包装结构

    公开(公告)号:US20130215613A1

    公开(公告)日:2013-08-22

    申请号:US13399027

    申请日:2012-02-17

    申请人: Yi-Tsuo Wu

    发明人: Yi-Tsuo Wu

    摘要: The present disclosure involves a lighting apparatus. The lighting apparatus includes a thermally-conductive substrate. The thermally-conductive substrate may include a substrate. The lighting apparatus also includes a printed circuit board (PCB). The PCB is located besides the thermally-conductive substrate. The PCB and the thermally-conductive substrate have different material compositions. The lighting apparatus also includes a photonic device located over the thermally-conductive substrate. The photonic device may include a light-emitting diode (LED) die. The photonic device is thermally coupled to the thermally-conductive substrate. The photonic device is electrically coupled to the printed circuit board. The lighting apparatus also includes a thermal dissipation structure. The thermal dissipation structure is thermally coupled to the thermally-conductive substrate.

    摘要翻译: 本公开涉及一种照明装置。 照明装置包括导热基板。 导热基板可以包括基板。 照明装置还包括印刷电路板(PCB)。 PCB位于导热基板之外。 PCB和导热基板具有不同的材料组成。 照明装置还包括位于导热基板上方的光子装置。 光子器件可以包括发光二极管(LED)裸片。 光子器件热耦合到导热衬底。 光子器件电耦合到印刷电路板。 照明装置还包括散热结构。 散热结构热耦合到导热基板。