公开(公告)号：US20050158469A1

公开(公告)日：2005-07-21

申请号：US11080748

申请日：2005-03-15

申请人： Young Park ,  Keun Yoo ,  Hong Lim ,  Sang Lee ,  Ik Lee ,  Sang Lee ,  Hyun Kyung ,  Jang Bae

发明人： Young Park ,  Keun Yoo ,  Hong Lim ,  Sang Lee ,  Ik Lee ,  Sang Lee ,  Hyun Kyung ,  Jang Bae

IPC分类号： H01L21/20 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45538 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/5096

摘要： A reactor for thin film deposition and a thin film deposition method using the reactor are provided. The reactor includes: a reactor block which receives a wafer transferred through a wafer transfer slit; a wafer block which is installed in the reactor block to receive the wafer thereon; a top plate disposed to cover the reactor block; a shower head which is mounted on the bottom of the top plate and diffuses gas toward the wafer; and an exhaust unit which exhausts the gas from the reactor block. A first supply pipeline which supplies a first reactant gas and/or an inert gas to the wafer; a second supply pipeline which supplies a second reactant gas and/or an inert gas to the wafer; and a plasma generator which generates plasma between the wafer block and shower head are included. The shower head includes: a first supply path connected to the first supply pipeline; a plurality of first diffuse holes formed in the bottom of the shower head at a constant interval; a first main path formed parallel to the plane of the shower head and connecting the plurality of first diffuse holes and the first supply path; a second supply path connected to the second supply pipeline; a plurality of second diffuse holes formed in the bottom of the shower head at a constant interval as the plurality of the first diffuse holes; and a second main path formed parallel to the plane of the shower head at a different height from the second main path and connecting the plurality of second diffuse holes and the second supply path.

摘要翻译： 提供了一种用于薄膜沉积的反应器和使用该反应器的薄膜沉积方法。 反应器包括：反应器块，其接收通过晶片传送狭缝转移的晶片; 晶片块，其安装在反应器块中以在其上接收晶片; 设置成覆盖反应器块的顶板; 淋浴头，其安装在顶板的底部并将气体向晶片扩散; 以及从反应器块排出气体的排气单元。 一种向晶片提供第一反应气体和/或惰性气体的第一供应管线; 第二供应管线，其向所述晶片供给第二反应气体和/或惰性气体; 并且包括在晶片块和淋浴头之间产生等离子体的等离子体发生器。 淋浴头包括：连接到第一供应管道的第一供应路径; 以恒定的间隔形成在所述淋浴喷头的底部的多个第一扩散孔; 第一主路径，其平行于所述淋浴头的平面形成，并且连接所述多个第一扩散孔和所述第一供给路径; 连接到第二供应管线的第二供应路径; 多个第二扩散孔，作为多个第一扩散孔以恒定的间隔形成在所述淋浴喷头的底部; 以及第二主路径，其与所述淋浴喷头的平面平行，与所述第二主路径不同的高度，并且连接所述多个第二扩散孔和所述第二供应路径。

公开(公告)号：US20050115675A1

公开(公告)日：2005-06-02

申请号：US10993924

申请日：2004-11-19

申请人： Gwo-Chuan Tzu ,  Salvador Umotoy

发明人： Gwo-Chuan Tzu ,  Salvador Umotoy

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  C23F1/00

CPC分类号： C23C16/45544 ,  C23C16/455 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45538 ,  C23C16/45561 ,  C23C16/50 ,  H01L21/67017

摘要： A lid assembly for a semiconductor processing system is provided. The lid assembly generally includes a lid having first and second opposed surfaces, a plurality of controllable flow channels extending from the first and second opposed surfaces and a gas control system disposed on the first surface and operably opening and closing the channels. The gas control system includes a gas manifold disposed on the lid, at least one valve coupled to the gas manifold and adapted to control a flow through one of the flow channels, a reservoir fluidly connected to the gas manifold, and a precursor source fluidly connected to the reservoir.

摘要翻译： 提供了一种用于半导体处理系统的盖组件。 盖组件通常包括具有第一和第二相对表面的盖，从第一和第二相对表面延伸的多个可控流动通道和设置在第一表面上并可操作地打开和关闭通道的气体控制系统。 气体控制系统包括设置在盖上的气体歧管，至少一个阀，其连接到气体歧管并且适于控制通过流动通道之一的流动，流体连接到气体歧管的储存器和流体连接的前体源 到水库

公开(公告)号：US06886491B2

公开(公告)日：2005-05-03

申请号：US10102108

申请日：2002-03-19

申请人： Jae-Ho Kim ,  Sang-Joon Park

发明人： Jae-Ho Kim ,  Sang-Joon Park

IPC分类号： C23C16/455 ,  C23C16/44 ,  C23C16/515 ,  H01L21/205 ,  C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/45514 ,  C23C16/45538 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/515

摘要： The present invention relates to chemical vapor deposition apparatus. In the chemical vapor deposition apparatus, an RF power source connection portionconnected to an external RF power source is installed on an upper side of a chamber; an RF electrode plate is installed within the chamber to be spaced with a predetermined gap from an inner upper surface of the chamber and to be spaced with a predetermined gap from a showerhead disposed below the RF electrode plate; plasma is generated in a first buffer portion, which is defined by a gap between the RF electrode plate and an upper surface of the showerhead, by means of the electric power applied from the external RF power source to the RF electrode plate; the showerhead is divided into two sections in a vertical direction and a second buffer portion is defined by a space between the two sections; reactant gases are supplied to the first buffer portion in which the plasma is generated; and source gases are supplied to the second buffer portion.

摘要翻译： 本发明涉及化学气相沉积装置。 在化学气相沉积设备中，连接到外部RF电源的RF电源连接部分安装在室的上侧; 射频电极板安装在腔室内以与腔室的内上表面隔开预定的间隙，并与设置在RF电极板下方的喷头隔开预定间隙; 通过从外部RF电源向RF电极板施加的电力，在由RF电极板和喷头的上表面之间的间隙限定的第一缓冲部分中产生等离子体; 淋浴头在垂直方向上分为两部分，第二缓冲部分由两部分之间的空间限定; 将反应气体供给到其中产生等离子体的第一缓冲部分; 并且源气体被供应到第二缓冲部分。

公开(公告)号：US20050087130A1

公开(公告)日：2005-04-28

申请号：US10683606

申请日：2003-10-09

申请人： Garo Derderian

发明人： Garo Derderian

IPC分类号： C23C16/00 ,  C23C16/14 ,  C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  H01L21/00

CPC分类号： C23C16/14 ,  C23C16/4404 ,  C23C16/45538 ,  C23C16/45544 ,  C23C16/45574 ,  C23C16/511 ,  H01L21/67069

摘要： One aspect of the invention is directed toward a method of forming a conductive layer on a microfeature workpiece. In one embodiment, the method comprises depositing an electrically conductive material onto a first microfeature workpiece in a vapor deposition process by flowing a gas into a plasma zone of a vapor deposition chamber and transmitting an energy into the plasma zone via a transmitting window. The energy transmitted through the window and into the plasma zone produces a plasma from the gas. The energy, for example, can be microwave radiation. The plasma produced from the gas forms a conductive layer on the workpiece in either a CVD or an ALD process. The process of forming the conductive layer on the workpiece concomitantly forms a secondary deposit of a residual film on the window. The residual film has a first transmissivity to the energy used to generate the plasma. This embodiment of the method further includes changing the residual film on the window to have a second transmissivity to the energy. The second transmissivity, for example, can be less than the first transmissivity such that changing the residual film to have the second transmissivity increases the amount of plasma energy that can propagate through the window and into the plasma zone.

摘要翻译： 本发明的一个方面涉及在微特征工件上形成导电层的方法。 在一个实施例中，该方法包括通过将气体流入气相沉积室的等离子体区域并经由透射窗口将能量传输到等离子体区域中，在气相沉积工艺中将导电材料沉积到第一微特征工件上。 通过窗口传输并进入等离子体区域的能量产生来自气体的等离子体。 例如，能量可以是微波辐射。 由气体产生的等离子体在CVD或ALD工艺中在工件上形成导电层。 在工件上形成导电层的过程同时在窗户上形成残余膜的二次沉积。 残余膜具有与用于产生等离子体的能量的第一透射率。 该方法的该实施例还包括改变窗口上的残余膜以对能量具有第二透射率。 例如，第二透射率可以小于第一透射率，使得改变具有第二透射率的残余膜增加可以通过窗口传播到等离子体区域中的等离子体能量的量。

公开(公告)号：US06569501B2

公开(公告)日：2003-05-27

申请号：US10137851

申请日：2002-05-03

申请人： Tony P. Chiang ,  Karl F. Leeser

发明人： Tony P. Chiang ,  Karl F. Leeser

IPC分类号： H05H100

CPC分类号： C23C16/45538 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/463 ,  C23C16/466 ,  C23C16/481 ,  C23C16/483 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76871

摘要： The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.

公开(公告)号：US20020164423A1

公开(公告)日：2002-11-07

申请号：US10137855

申请日：2002-05-03

发明人： Tony P. Chiang ,  Karl F. Leeser

IPC分类号： C23C016/00

CPC分类号： C23C16/45538 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/481 ,  C23C16/483

摘要： The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.

摘要翻译： 本发明涉及适用于阻挡层，粘附层，种子层，低介电常数（低k）膜，高介电常数（高k）膜等的沉积的增强的顺序原子层沉积（ALD）技术 导电，半导体和非导电膜。 这通过以下方式实现：1）提供触发沉积反应的非热或非热解方法; 2）提供在较低温度下沉积更高密度的较纯膜的方法; 和3）提供更快和更有效的调节沉积顺序的手段，并因此提供总体处理速率，从而产生改进的沉积方法。

公开(公告)号：US20020104481A1

公开(公告)日：2002-08-08

申请号：US09812352

申请日：2001-03-19

发明人： Tony P. Chiang ,  Karl F. Leeser

IPC分类号： C23C016/00

CPC分类号： C23C16/08 ,  C23C16/0227 ,  C23C16/34 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45538 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/463 ,  C23C16/466 ,  C23C16/481 ,  C23C16/483 ,  C23C16/511 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76871

摘要： The present invention relates to an enhanced sequential or non-sequential atomic layer deposition (ALD) apparatus and technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method; and, 4) providing a means of improved radical generation and delivery. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. null37 C.F.R. null 1.72(b)null.

摘要翻译： 本发明涉及一种适用于沉积势垒层，粘附层，种子层，低介电常数（低k）膜，高介电常数（高介电常数）的高顺序或非顺序原子层沉积（ALD） k）薄膜和其它导电，半导电和非导电薄膜。 这通过以下方式实现：1）提供触发沉积反应的非热或非热解方法; 2）提供在较低温度下沉积更高密度的较纯膜的方法; 3）提供更快和更有效的调节沉积顺序的手段，从而提供总体工艺速率，从而产生改进的沉积方法; 和4）提供改善激进生成和传递的手段。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。 [37 C.F.R. §1.72（b）]。

公开(公告)号：US20240332071A1

公开(公告)日：2024-10-03

申请号：US18129704

申请日：2023-03-31

申请人： Intel Corporation

发明人： Alireza Narimannezhad ,  Vladislav Kamysbayev ,  Xiaoye Qin ,  Sunzida Ferdous ,  Reken Patel

IPC分类号： H01L21/768 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02 ,  H01L23/532

CPC分类号： H01L21/76834 ,  C23C16/401 ,  C23C16/45538 ,  C23C16/50 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/0223 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/0228 ,  H01L23/53295 ,  H01L23/53209 ,  H01L23/53257

摘要： A low-leakage oxide dielectric material with high elastic modulus is deposited directly upon an oxidizable feature with a polycyclic PE-ALD process that limits the formation of an oxide on the feature. A precursor of one or more constituents, such as silicon, may be deposited upon a workpiece during a deposition phase, and the absorbed precursor(s) may be oxidized during a first oxidation phase under more conservative conditions until a first film thickness is achieved. Subsequently, absorbed precursor(s) may be oxidized during a second oxidation phase under more aggressive conditions to arrive at a total film thickness. Transistor contact metal, which may provide local interconnection between source or drain terminals of multiple transistors, may maintain high electrical conductivity after being electrically insulated with such a low-leakage film.

公开(公告)号：US20240266168A1

公开(公告)日：2024-08-08

申请号：US18290601

申请日：2022-07-21

申请人： SCREEN Holdings Co., Ltd. ,  National University Corporation Tokai National Higher Education and Research System

发明人： Masaki INABA ,  Masahiro MIYAGI ,  Masaru HORI ,  Osamu ODA ,  Kazuki KODAMA

IPC分类号： H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  H01J37/32

CPC分类号： H01L21/0254 ,  C23C16/34 ,  C23C16/4408 ,  C23C16/45538 ,  C23C16/46 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32834 ,  H01L21/0262 ,  H01J2237/1825 ,  H01J2237/3321 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242

摘要： A method of manufacturing a group III-nitride semiconductor includes a loading step, a pressure reduction step, a heating step, a first film forming step, and a second film forming step. In the pressure reduction step, a pressure in the chamber is reduced. In the heating step, the substrate is heated. In the first film forming step, an organic metal gas containing a group III element is supplied to the substrate in the chamber, and a first gas containing hydrogen gas and nitrogen gas is excited into plasma and supplied to the substrate in the chamber. In the second film forming step, an organic metal gas containing the group III element is supplied to the substrate in the chamber, and a second gas not containing hydrogen gas and containing nitrogen gas is excited into plasma and supplied to the substrate in the chamber.

公开(公告)号：US20240102157A1

公开(公告)日：2024-03-28

申请号：US17950946

申请日：2022-09-22

申请人： Applied Materials, Inc.

发明人： TUERXUN AILIHUMAER ,  Srinivas Gandikota ,  Yixiong Yang ,  Yogesh Sharma ,  Ashutosh Agarwal ,  Mandyam Sriram

IPC分类号： C23C16/08 ,  C23C16/455 ,  H01L21/285

CPC分类号： C23C16/08 ,  C23C16/45538 ,  C23C16/45553 ,  H01L21/28556 ,  H01L2924/01042

摘要： Embodiments of the disclosure are directed to methods of depositing a molybdenum film directly on a substrate surface (e.g., a low-K dielectric material) by exposing the substrate surface to a molybdenum-containing precursor and a plasma at a temperature of less than or equal to 400° C. The molybdenum-containing precursor comprises one or more of molybdenum pentachloride (MoCl5), molybdenum dioxide dichloride (MoO2Cl2), molybdenum oxytetrachloride (MoOCl4), molybdenum hexacarbonyl, bis(tert-butylimido)-bis(dimethylamido)molybdenum, or bis(ethylbenzene) molybdenum. The plasma comprises one or more of hydrogen (H2), nitrogen (N2), or a silane (SixHy). In some embodiments, when the molybdenum-containing precursor comprises molybdenum hexafluoride (MoF6), the plasma does not include hydrogen (H2).