公开(公告)号：US12009180B2

公开(公告)日：2024-06-11

申请号：US17435509

申请日：2020-08-27

Applicant: Hitachi High-Tech Corporation

Inventor： Norihiko Ikeda ,  Kazuya Yamada

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32128 ,  H01J37/32146 ,  H01J37/32201 ,  H01J37/32293 ,  H01J37/32311 ,  H01J2237/3343

Abstract: A plasma processing apparatus includes: a processing chamber; a first radio frequency power supply configured to supply a first radio frequency power; a second radio frequency power supply configured to supply a second radio frequency power; and a control device configured to, when the first radio frequency power is modulated by a first waveform having a first period and a second period adjacent to the first period, and the second radio frequency power supply is modulated by a second waveform having a period A and a period B, control the second radio frequency power supply such that each second radio frequency power in the period A is supplied in the first period and the second period, in which an amplitude in the second period is smaller than an amplitude in the first period, and an amplitude in the period A is larger than an amplitude in the period B.

公开(公告)号：US12002654B2

公开(公告)日：2024-06-04

申请号：US17359318

申请日：2021-06-25

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng Chua ,  Christian Amormino ,  Hanh Nguyen ,  Kallol Bera ,  Philip Allan Kraus

IPC: H01J37/32 ,  H03F3/19 ,  H03F3/21

CPC classification number: H01J37/32201 ,  H01J37/32311 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01J2237/335 ,  H03F3/19 ,  H03F3/21

Abstract: Embodiments include a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source includes a plurality of high-frequency emission modules, where each high-frequency emission module comprises and oscillator module, an amplification module, and an applicator. In an embodiment the oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, each high-frequency emission module includes a different oscillator module.

公开(公告)号：US20230411123A1

公开(公告)日：2023-12-21

申请号：US18330602

申请日：2023-06-07

Applicant: 6K Inc.

Inventor： Michael C. Kozlowski ,  Michael Resnick ,  Pawel Matys

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32201

Abstract: Disclosed herein are systems, methods, and devices processing feed material utilizing an upstream swirl module and composite gas flows. Some embodiments are directed to a microwave plasma apparatus for processing a material, comprising: a first flow module, a second flow module, and a liner.

公开(公告)号：US20230399745A1

公开(公告)日：2023-12-14

申请号：US18205766

申请日：2023-06-05

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Makoto Igarashi ,  Ranjit Borude

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/56 ,  C23C16/52 ,  H01J37/32 ,  C23C16/511 ,  C23C16/505

CPC classification number: C23C16/45557 ,  C23C16/401 ,  C23C16/56 ,  C23C16/52 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32091 ,  C23C16/511 ,  C23C16/505

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments relate to cyclical processes for gap-fill in which deposition is followed by a microwave plasma curing treatment and repeated. In some embodiments, the deposition and microwave plasma curing treatment are carried out in separate stations. In some embodiments, a second station is heated to a higher temperature than a first station. In some embodiments, a separate module is used for high temperature curing.

公开(公告)号：US20230326716A1

公开(公告)日：2023-10-12

申请号：US18042513

申请日：2021-08-16

Applicant: Tokyo Electron Limited

Inventor： Eiki KAMATA ,  Hiroshi KANEKO ,  Taro IKEDA

IPC: H01J37/32

CPC classification number: H01J37/32119 ,  H01J37/3222 ,  H01J37/32311 ,  H01J37/32201 ,  H01J37/3244

Abstract: A plasma processing apparatus includes a chamber having a processing space for performing plasma processing on a substrate and a synthesis space for synthesizing electromagnetic waves, a dielectric window configured to partition the processing space and the synthesis space, an antenna unit having a plurality of antennas that radiate the electromagnetic waves into the synthesis space and functioning as a phased array antenna, an electromagnetic wave output part configured to output the electromagnetic waves to the antenna unit, and a controller configured to cause the antenna unit to function as the phased array antenna. The dielectric window has a plurality of recesses on a surface thereof facing the processing space.

公开(公告)号：US20230260756A1

公开(公告)日：2023-08-17

申请号：US18306455

申请日：2023-04-25

Applicant: Hangzhou Dianzi University

Inventor： Jie Liu ,  Liping Yan ,  Zhiqun Cheng ,  Tiansong Deng

IPC: H01J37/32 ,  C23C16/511 ,  C23C16/27

CPC classification number: H01J37/32266 ,  H01J37/32229 ,  H01J37/32715 ,  H01J37/32256 ,  H01J37/3222 ,  C23C16/511 ,  C23C16/274 ,  H01J2237/332 ,  H01J2237/24585 ,  H01J2237/002 ,  H01J37/32201

Abstract: Disclosed is a multi-port phase compensation nested apparatus for microwave-plasma deposition of diamond films. A resonant cavity part includes an inner cavity body, a ring waveguide, a slot opening, a quartz ring, a metal platform, a deposition platform, a substrate, and a recess, wherein the slot opening is located on a wall of the inner cavity body, communicating the inner cavity body with the ring waveguide.

公开(公告)号：US20190237326A1

公开(公告)日：2019-08-01

申请号：US16257790

申请日：2019-01-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki KOMIYA ,  Hirokazu UEDA ,  Atsushi ENDO

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  H01L21/687 ,  H01J37/32

CPC classification number: H01L21/02274 ,  H01J37/32201 ,  H01L21/02112 ,  H01L21/31122 ,  H01L21/67069 ,  H01L21/68714

Abstract: There is provided a selective film forming method, comprising a first step of preparing a work piece having a plurality of recesses; a second step of forming a boron-based film having a first predetermined film thickness in a portion of the work piece other than the recesses by plasma CVD; and a third step of etching a side surface of the formed boron-based film having the first predetermined film thickness, wherein the boron-based film is formed in the portion of the work piece other than the recesses in a self-aligned and selective manner.

公开(公告)号：US20180174838A1

公开(公告)日：2018-06-21

申请号：US15833685

申请日：2017-12-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masahiro OKA ,  Hiraku ISHIKAWA ,  Yoshimasa WATANABE ,  Syuhei YONEZAWA

IPC: H01L21/033 ,  H01L21/311 ,  H01J37/32 ,  C23C16/511 ,  C23C16/38 ,  C23C16/46 ,  C23C16/44

CPC classification number: H01L21/0332 ,  C23C16/38 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/5096 ,  C23C16/511 ,  H01J37/32201 ,  H01J37/32229 ,  H01J37/32449 ,  H01J2237/182 ,  H01J2237/3321 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/11551 ,  H01L27/11578

Abstract: There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr).

公开(公告)号：US09991097B2

公开(公告)日：2018-06-05

申请号：US15793856

申请日：2017-10-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomohito Komatsu ,  Shigenori Ozaki ,  Yutaka Fujino ,  Jun Nakagomi

IPC: H01J37/32

CPC classification number: H01J37/32201 ,  H01J37/32192 ,  H01J37/32302 ,  H01J37/3244

Abstract: A plasma processing apparatus includes a chamber; a mounting table configured to mount thereon a target object in the chamber; a plasma source configured to introduce microwaves into the chamber through a ceiling wall of the chamber and generate a surface wave plasma in the chamber; a first gas introduction unit configured to introduce a first gas into the chamber from the ceiling wall; and a second gas introduction unit configured to introduce a second gas into the chamber from a predetermined height position between the ceiling wall and the mounting table. The second gas introduction unit has a plurality of nozzles extending from the ceiling wall toward the mounting table and arranged on a same circumference at a regular interval. Each of the nozzles discharges the second gas toward a nozzle adjacent thereto.

公开(公告)号：US09633821B2

公开(公告)日：2017-04-25

申请号：US15051816

申请日：2016-02-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazushi Kaneko ,  Toshihiko Iwao ,  Satoru Kawakami

IPC: H01J37/32 ,  H01J37/244

CPC classification number: H01J37/32311 ,  H01J37/244 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32211 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/32238 ,  H01J37/32266 ,  H01J37/32935 ,  H01J37/3299

Abstract: Disclosed is a microwave plasma processing apparatus including: a processing container configured to define a processing space; a microwave generator configured to generate microwaves; a distributor configured to distribute the microwaves to a plurality of waveguides; an antenna installed in the processing container and to radiate the microwaves distributed to the plurality of waveguides to the processing space; a monitor unit configured to monitor a voltage of each of the plurality of waveguides; a storage unit configured to store a difference between a monitor value of the voltage monitored by the monitor unit and a predetermined reference value of the voltage and a control value of a distribution ratio of the distributor corresponding to the difference; and a control unit configured to acquire the control value of the distribution ratio of the distributor from the storage unit and to control the distribution ratio of the distributor.