公开(公告)号：US09340866B2

公开(公告)日：2016-05-17

申请号：US13435766

申请日：2012-03-30

Applicant: Alan Ritchie ,  Donny Young ,  Wei W. Wang ,  Ananthkrishna Jupudi ,  Thanh X. Nguyen ,  Kirankumar Savandaiah

Inventor： Alan Ritchie ,  Donny Young ,  Wei W. Wang ,  Ananthkrishna Jupudi ,  Thanh X. Nguyen ,  Kirankumar Savandaiah

IPC: C23C14/50 ,  C23C14/34 ,  H01J37/32 ,  H01J37/34

CPC classification number: C23C14/34 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/32651 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/3405 ,  H01J37/3411

Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a substrate support that may include a dielectric member having a surface to support a substrate thereon; one or more first conductive members disposed below the dielectric member and having a dielectric member facing surface adjacent to the dielectric member; and a second conductive member disposed about and contacting the one or more first conductive members such that RF energy provided to the substrate by an RF source returns to the RF source by traveling radially outward from the substrate support along the dielectric member facing surface of the one or more first conductive members and along a first surface of the second conductive member disposed substantially parallel to a peripheral edge surface of the one or more first conductive members after travelling along the dielectric layer facing surface.

Abstract translation: 本文提供了处理基板的设备。 在一些实施例中，用于处理衬底的装置包括衬底支撑件，其可以包括具有用于在其上支撑衬底的表面的电介质构件; 一个或多个第一导电构件，其布置在所述电介质构件下方并且具有邻近所述电介质构件的电介质构件面向表面; 以及设置在所述一个或多个第一导电构件周围并且接触所述一个或多个第一导电构件的第二导电构件，使得通过RF源提供给所述衬底的RF能量通过沿着所述衬底支撑件的所述电介质构件面向表面径向向外径向向外移动 或更多的第一导电构件，并且沿第一导电构件的第一表面布置成大致平行于一个或多个第一导电构件的沿着电介质层面向表面行进的周边边缘表面。

公开(公告)号：US09275838B2

公开(公告)日：2016-03-01

申请号：US12552474

申请日：2009-09-02

Applicant: Eller Y. Juco ,  Neungho Shin ,  Yunsang Kim ,  Andrew Bailey

Inventor： Eller Y. Juco ,  Neungho Shin ,  Yunsang Kim ,  Andrew Bailey

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32706 ,  H01J2237/334

Abstract: An arrangement for controlling bevel etch rate during plasma processing within a processing chamber. The arrangement includes a power source and a gas distribution system. The arrangement also includes a lower electrode, which is configured at least for supporting a substrate. The arrangement further includes a top ring electrode positioned above the substrate and a bottom ring electrode positioned below the substrate. The arrangement yet also includes a first match arrangement coupled to the top ring electrode and configured at least for controlling current flowing through the top ring electrode to control amount of plasma available for etching at least a part of the substrate top edge. The arrangement yet further includes a second match arrangement configured to control the current flowing through the bottom ring electrode to control amount of plasma available for at least etching at least a part of the substrate bottom edge.

Abstract translation: 一种用于在处理室内的等离子体处理期间控制斜面蚀刻速率的装置。 该装置包括电源和气体分配系统。 该布置还包括下电极，其被配置为至少用于支撑衬底。 该布置还包括位于基板上方的顶环电极和位于基板下方的底环电极。 该布置还包括耦合到顶环电极并且被配置为至少用于控制流过顶环电极的电流以控制可用于蚀刻衬底顶部边缘的至少一部分的等离子体的第一匹配布置。 该装置还包括第二匹配装置，其被配置为控制流过底环电极的电流以控制可用于至少蚀刻至少一部分衬底底边缘的等离子体的量。

公开(公告)号：US20160027620A1

公开(公告)日：2016-01-28

申请号：US14807319

申请日：2015-07-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jason MARION ,  Sonam SHERPA ,  Sergey A. VORONIN ,  Alok RANJAN ,  Yoshio ISHIKAWA ,  Takashi ENOMOTO

IPC: H01J37/32

CPC classification number: H01J37/32697 ,  H01J37/32422 ,  H01J37/32706 ,  H01J37/32715 ,  H01L21/6833

Abstract: A plasma processing method and apparatus are provided in which current spikes associated with application of a voltage to an electrostatic chuck (ESC) are minimized or reduced when the processing plasma is present. According to an example, the voltage is applied to the ESC after the processing plasma is struck, however the voltage is ramped or increased in a step-wise manner to achieve the desired final ESC voltage. In an alternate embodiment, the ESC voltage is at least partially applied before striking of the plasma for processing the wafer. By reducing current spikes associated with application of the voltage to the ESC during the presence of the processing plasma, transfer or deposition of particles on the wafer can be reduced.

Abstract translation: 提供了一种等离子体处理方法和装置，其中当存在处理等离子体时，使与静电卡盘（ESC）的电压施加相关联的电流尖峰被最小化或减小。 根据一个例子，在处理等离子体被击打之后，电压被施加到ESC，然而电压以逐步方式倾斜或增加以达到期望的最终ESC电压。 在替代实施例中，ESC电压至少部分地施加在等离子体撞击之前用于处理晶片。 通过在处理等离子体的存在期间减少与电压施加相关联的电流尖峰，可以减少颗粒在晶片上的转移或沉积。

公开(公告)号：US20160027615A1

公开(公告)日：2016-01-28

申请号：US14788759

申请日：2015-06-30

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Masaki ISHIGURO ,  Masahiro SUMIYA ,  Shigeru SHIRAYONE ,  Kazuyuki IKENAGA ,  Tomoyuki TAMURA

IPC: H01J37/32

CPC classification number: H01J37/32532 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32706 ,  H01J37/32935 ,  H01J37/3299

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.

Abstract translation: 一种等离子体处理装置，包括：等离子体处理室; 射频电源; 安装样品的样品台; 布置在样品台内部并静电卡住样品的电极; 直流电源，其向所述电极施加直流电压; 以及控制装置，其控制所述直流电源的输出电压，使得所述样品的电位与所述等离子体处理室的内壁的电位之间的电位差降低到预定的 等离子体放电中断时的范围。

公开(公告)号：US20160020075A1

公开(公告)日：2016-01-21

申请号：US14336355

申请日：2014-07-21

Applicant: Lam Research Corporation

Inventor： Gary M. Lemson

IPC: H01J37/32 ,  G01R15/26

CPC classification number: H01J37/32183 ,  G01R15/04 ,  G01R15/26 ,  G01R19/0084 ,  H01J37/32155 ,  H01J37/32577 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/332 ,  H01J2237/334

Abstract: A voltage sensor for a voltage controlled interface of a plasma processing system. The voltage sensor receives a RF signal generated by a pickup device. The RF signal is indicative of a RF voltage provided at a substrate in a plasma chamber. The voltage sensor includes first and second dividers corresponding to first and second channels and having first and second capacitance ratios. The dividers receive the RF signal and respectively generate first and second reduced voltage signals. A first output of the first channel outputs a first output signal based on the first reduced voltage signal and while the RF signal is in a first voltage range. A second output of the second channel outputs a second output signal based on the second reduced voltage signal and while the RF signal is in a second voltage range.

Abstract translation: 一种用于等离子体处理系统的电压控制接口的电压传感器。 电压传感器接收由拾取装置产生的RF信号。 RF信号表示设置在等离子体室中的衬底处的RF电压。 电压传感器包括对应于第一和第二通道并具有第一和第二电容比的第一和第二除法器。 分频器接收RF信号并分别产生第一和第二降低电压信号。 第一通道的第一输出基于第一降压信号输出第一输出信号，而RF信号处于第一电压范围。 第二通道的第二输出基于第二降压信号输出第二输出信号，而RF信号处于第二电压范围。

公开(公告)号：US09232628B2

公开(公告)日：2016-01-05

申请号：US13771428

申请日：2013-02-20

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Svetlana B. Radovanov ,  Ludovic Godet ,  Bon-Woong Koo

IPC: H01L21/00 ,  C23C16/00 ,  H05H3/00 ,  C23C16/452 ,  H01J37/32 ,  C23C16/04 ,  C23C16/507

CPC classification number: H05H3/00 ,  C23C16/045 ,  C23C16/452 ,  C23C16/507 ,  H01J37/32146 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/32706

Abstract: A system for processing a substrate may include a first chamber operative to define a first plasma and a second chamber adjacent the first chamber, where the second chamber is electrically isolated from the first chamber, and configured to define a second plasma. The system may also include an extraction assembly disposed between the first chamber and second chamber to provide at least plasma isolation between the first plasma and the second plasma, a substrate assembly configured to support the substrate in the second chamber; and a biasing system configured to supply a plurality of first voltage pulses to direct first ions from the first plasma through the second chamber towards the substrate during one time period, and to supply a plurality of second voltage pulses to generate the second plasma and to attract second ions from the second plasma during another time period.

Abstract translation: 用于处理衬底的系统可以包括可操作地限定第一等离子体的第一室和邻近第一室的第二室，其中第二室与第一室电隔离，并且被配置为限定第二等离子体。 系统还可以包括设置在第一室和第二室之间的提取组件，以在第一等离子体和第二等离子体之间提供至少等离子体隔离;衬底组件，被配置为将衬底支撑在第二室中; 以及偏置系统，被配置为提供多个第一电压脉冲以在一个时间段期间将来自所述第一等离子体的第一离子通过所述第二室朝向所述衬底引导，并且提供多个第二电压脉冲以产生所述第二等离子体并且吸引 在另一时间段期间来自第二等离子体的第二离子。

公开(公告)号：US20150371827A1

公开(公告)日：2015-12-24

申请号：US14467806

申请日：2014-08-25

Applicant: Ludovic Godet ,  Jun Xue ,  Prashanth Kothnur ,  Umesh M. Kelkar ,  Matthew D. Scotney-Castle

Inventor： Ludovic Godet ,  Jun Xue ,  Prashanth Kothnur ,  Umesh M. Kelkar ,  Matthew D. Scotney-Castle

IPC: H01J37/32 ,  H01J37/317

CPC classification number: H01J37/3172 ,  H01J37/32422 ,  H01J37/32623 ,  H01J37/32706 ,  H01L21/3065

Abstract: The angular ion distribution in plasma processing is controlled using a bias voltage frequency. In one example, a plasma containing gas ions is generated in a plasma chamber. The plasma sheath is modified using an aperture disposed between the plasma sheath and the workpiece so that the plasma sheath takes a shape above the aperture. An oscillating radio frequency bias voltage is generated and applied to a workpiece holder. The workpiece holder applies the bias voltage to the workpiece to generate a workpiece bias voltage with respect to the plasma to attract ions across the plasma sheath toward the workpiece. The aperture and the frequency of the bias voltage control an angle at which the ions are attracted toward the workpiece.

Abstract translation: 使用偏置电压频率来控制等离子体处理中的角度离子分布。 在一个实例中，在等离子体室中产生含有气体离子的等离子体。 使用设置在等离子体护套和工件之间的孔来改变等离子体护套，使得等离子体护套在孔的上方具有形状。 产生振荡射频偏置电压并将其施加到工件保持器。 工件保持器将偏置电压施加到工件以产生相对于等离子体的工件偏置电压，以将等离子体护套上的离子吸引到工件。 偏压的孔径和频率控制离子被吸引到工件的角度。

公开(公告)号：US20150329968A1

公开(公告)日：2015-11-19

申请号：US14440728

申请日：2013-12-12

Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)

Inventor： Hiroshi Tamagaki ,  Junji Haga

IPC: C23C16/54 ,  C23C16/44 ,  C23C16/458 ,  C23C16/503

CPC classification number: C23C16/54 ,  C23C16/26 ,  C23C16/4401 ,  C23C16/4409 ,  C23C16/4412 ,  C23C16/4584 ,  C23C16/4588 ,  C23C16/503 ,  C23C16/505 ,  H01J37/32568 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/32779 ,  H01J37/32853 ,  H01J37/32899 ,  H01L21/67173 ,  H01L21/67201 ,  H01L21/67754 ,  H01L21/6776

Abstract: Provided is an in-line plasma CVD apparatus (100) capable of performing a deposition process at a high production efficiency while maintaining stable deposition conditions, without spending time and energy on cleaning and the like even when in use for a long time. This plasma CVD apparatus (100) is equipped with a deposition chamber (1) and load-lock chambers (20, 30) which are separate from the deposition chamber (1). The apparatus (100) is of the in-line-type for conveying a substrate between these chambers and producing a film on the substrate. The deposition chamber (1) is equipped with a vacuum chamber (2), a vacuum exhaust means (3) for discharging the air inside the vacuum chamber (2), a gas supply unit (9) for supplying a source gas into the vacuum chamber (2), and a plasma generation power supply (10) for generating plasma inside the vacuum chamber (2). Substrates in the deposition chamber (1) are divided into a first group (18) connected to one pole of the plasma generation power supply (10), and a second group (19) connected to the other pole of the plasma generation power supply (10). The plasma is produced between the first group (18) and the second group (19) which have different polarities from one another.

Abstract translation: 提供一种在保持稳定的沉积条件下能够以高生产效率进行沉积处理的在线等离子体CVD装置（100），即使长时间使用也不会花费时间和能量进行清洁等。 该等离子体CVD装置（100）装备有与沉积室（1）分离的沉积室（1）和装载锁定室（20,30）。 该装置（100）具有在这些室之间输送基板的直列式，并在基板上产生薄膜。 沉积室（1）配备有真空室（2），用于排出真空室（2）内的空气的真空排气装置（3），用于将源气体供应到真空中的气体供应单元（9） 室（2）和用于在真空室（2）内产生等离子体的等离子体发生电源（10）。 沉积室（1）中的基板被分成连接到等离子体发生电源（10）的一个极的第一组（18）和连接到等离子体发生电源的另一个极的第二组（19） 10）。 在具有彼此不同极性的第一组（18）和第二组（19）之间产生等离子体。

公开(公告)号：US20150104958A1

公开(公告)日：2015-04-16

申请号：US14403289

申请日：2014-03-11

Applicant: The Timken Company

Inventor： Richard J. Fowler ,  Michael D. Drory

IPC: H01R39/64 ,  H01J37/32

CPC classification number: H01R39/643 ,  C23C14/505 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/50 ,  H01J37/32 ,  H01J37/32577 ,  H01J37/32706 ,  H01J37/32715

Abstract: A coupling (30) for the introduction of a bias voltage into a vacuum chamber. The coupling consists of a metallic ball bearing assembly (36), a bearing sleeve or cup (34), and an EMI shielding gasket (42) seated within the bearing sleeve or cup. The ball bearing assembly is fitted within the EMI shielding gasket, about a metallic shaft (32) which, in turn, is coupled to a source of the bias voltage. The bearing sleeve or cup is, in turn, coupled to a rotating component such as a platen, for receiving the bias voltage within the vacuum chamber.

Abstract translation: 用于将偏置电压引入真空室的耦合器（30）。 联轴器由金属球轴承组件（36），轴承套或杯（34）和安置在轴承套或杯内的EMI屏蔽垫（42）组成。 围绕金属轴（32）将滚珠轴承组件安装在EMI屏蔽垫圈内，金属轴（32）又连接到偏置电压源。 轴承套筒或杯子又连接到诸如压板的旋转部件，用于接收真空室内的偏置电压。

公开(公告)号：US08941037B2

公开(公告)日：2015-01-27

申请号：US11950773

申请日：2007-12-05

Applicant: Daisuke Hayashi ,  Kazuya Nagaseki

Inventor： Daisuke Hayashi ,  Kazuya Nagaseki

IPC: H05B6/10 ,  H05B6/36 ,  H01L21/687 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/68735 ,  H01J37/32522 ,  H01J37/32642 ,  H01J37/32706 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831 ,  H05B6/105

Abstract: A substrate processing apparatus that can accurately control the temperature of a focus ring without causing abnormal electric discharge and the back-flow of radio frequency electrical power during the application of radio frequency electrical power. A wafer is mounted on a mounting stage disposed in a housing chamber. An annular focus ring is mounted on the mounting stage in such a manner as to surround the peripheral portion of the mounted wafer. The pressure in the housing chamber is reduced, radio frequency electrical power is applied to the mounting stage, and the focus ring generates heat by itself.

Abstract translation: 一种基板处理装置，其可以在施加射频电力的同时，不会引起异常放电和射频电力的反向流动而精确地控制聚焦环的温度。 晶片安装在设置在容纳室中的安装台上。 环形聚焦环以围绕安装晶片的周边部分的方式安装在安装台上。 容纳室中的压力减小，射频电力施加到安装台，并且聚焦环自身产生热量。