公开(公告)号：US20240290839A1

公开(公告)日：2024-08-29

申请号：US18693231

申请日：2023-02-14

申请人： Robert Bosch GmbH

发明人： Heribert Weber ,  Peter Schmollngruber

IPC分类号： H01L29/06 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3065

CPC分类号： H01L29/0684 ,  H01L21/02675 ,  H01L21/30604 ,  H01L21/3065

摘要： A method for forming a layer structure surrounding at least one recess. The method includes: structuring a multitude of depressions in a first semiconductor layer of the later layer structure such that the depressions form at least one contiguous recess, including a plurality of depressions, in the first semiconductor layer, into which wall structures structured out of the first semiconductor layer by means of the depressions project; at least partially areally covering the at least one recess by forming at least one second semiconductor layer from the at least one identical material to the first semiconductor layer; and introducing a medium through at least one medium supply opening into the at least one recess, which medium chemically reacts with the projecting wall structures.

公开(公告)号：US20240282860A1

公开(公告)日：2024-08-22

申请号：US18171528

申请日：2023-02-20

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Ruilong Xie ,  Julien Frougier ,  Susan Ng Emans ,  Andrew M. Greene

IPC分类号： H01L29/78 ,  H01L21/308 ,  H01L29/66

CPC分类号： H01L29/7853 ,  H01L21/3086 ,  H01L29/66795 ,  H01L21/3065

摘要： A finFET that includes a nonlinear channel is presented. The nonlinear channel includes one or more arced, curved, segmented, or the like, sidewall(s) that define a channel width and a channel length. The nonlinear channel provides a relatively increased channel length compared to a linear fin that is orientated orthogonal to the gate width. As such, channel length of the nonlinear channel may be relatively increased within the confines of the gate. In other words, short channel effects may be limited due to a reduced electric field along the nonlinear channel due to the relatively increased channel or fin length within the footprint of the gate.

公开(公告)号：US12068278B2

公开(公告)日：2024-08-20

申请号：US18148369

申请日：2022-12-29

申请人： ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

发明人： Cyprian Emeka Uzoh ,  Guilian Gao ,  Laura Wills Mirkarimi ,  Gaius Gillman Fountain, Jr.

IPC分类号： H01L23/00 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/683 ,  H01L21/78 ,  H01L23/31 ,  H01L25/00 ,  H01L25/065

CPC分类号： H01L24/83 ,  H01L21/02076 ,  H01L21/3085 ,  H01L21/31116 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3185 ,  H01L25/0657 ,  H01L25/50 ,  H01L21/3065 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2224/83013 ,  H01L2224/83031 ,  H01L2224/83895 ,  H01L2224/83896

摘要： Representative implementations of techniques and methods include processing singulated dies in preparation for bonding. A plurality of semiconductor die components may be singulated from a wafer component, the semiconductor die components each having a substantially planar surface. Particles and shards of material may be removed from edges of the plurality of semiconductor die component. Additionally, one or more of the plurality of semiconductor die components may be bonded to a prepared bonding surface, via the substantially planar surface.

公开(公告)号：US12068135B2

公开(公告)日：2024-08-20

申请号：US17175216

申请日：2021-02-12

申请人： Applied Materials, Inc.

发明人： Ming Xu ,  Ashley Mutsuo Okada ,  Michael D. Willwerth ,  Duc Dang Buckius ,  Jeffrey Ludwig ,  Aditi Mithun ,  Benjamin Schwarz

IPC分类号： H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC分类号： H01J37/32449 ,  H01L21/3065 ,  H01J2237/332 ,  H01J2237/334

摘要： A gas distribution apparatus is provided having a first reservoir with a first upstream end and a first downstream end and a second reservoir with a second upstream end and a second downstream end. A reservoir switch valve is in fluid communication with the first downstream end of the first reservoir and the second downstream end of the second reservoir. The reservoir switch valve operable to selectively couple the first reservoir to an outlet of the reservoir switch valve when in a first state, and couple the second reservoir to the outlet of the reservoir switch valve when in a second state. A plurality of proportional flow control valves are provided having inlets coupled in parallel to the outlet of the reservoir switch valve The plurality of proportional flow control valves have outlets configured to provide gas to a processing chamber.

公开(公告)号：US12062523B2

公开(公告)日：2024-08-13

申请号：US17670670

申请日：2022-02-14

申请人： Taiwan Semiconductor Manufacturing Company

发明人： Cheng Kuang Tso ,  Chou-Feng Lee ,  Chih-Hsien Hsu ,  Chung-Hsiu Cheng ,  Jr-Sheng Chen

IPC分类号： H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/32449 ,  H01J37/32522 ,  H01L21/3065 ,  H01J2237/334

摘要： Methods and systems for uniformly cooling a dome within a plasma treatment system are disclosed. The methods and systems utilize a diffuser including a perforated plate and a cone. The perforated plate includes a center portion and multiple arrays of holes with each array being located circumferentially at a different distance from the center. The cone extends away from the center. The diffuser spreads cooling gas more uniformly across the surface of the dome.

公开(公告)号：US12062522B2

公开(公告)日：2024-08-13

申请号：US17662249

申请日：2022-05-06

申请人： Tokyo Electron Limited

发明人： Keiji Kitagaito ,  Fumiya Kobayashi ,  Maju Tomura

IPC分类号： H01J37/32 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455 ,  C23C16/509 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67

CPC分类号： H01J37/32091 ,  C23C16/045 ,  C23C16/402 ,  C23C16/509 ,  H01J37/32394 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32715 ,  H01L21/28238 ,  H01L21/3065 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/67069 ,  C23C16/45565 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32366 ,  H01J2237/334

摘要： A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step.

公开(公告)号：US20240266152A1

公开(公告)日：2024-08-08

申请号：US18107487

申请日：2023-02-08

申请人： Applied Materials, Inc.

发明人： Michael Andrew STEARNS ,  Alok RANJAN ,  Kartik RAMASWAMY ,  Peng TIAN ,  Timothy Joseph FRANKLIN ,  Chris BLANK ,  Carlaton WONG

IPC分类号： H01J37/32 ,  H01F27/28 ,  H01L21/3065

CPC分类号： H01J37/3266 ,  H01F27/28 ,  H01J37/3211 ,  H01L21/3065 ,  H01J2237/0264 ,  H01J2237/3341 ,  H01J2237/3343

摘要： Embodiments of the present disclosure include an apparatus and methods for the plasma processing of a substrate. Some embodiments are directed to a plasma processing chamber. The plasma processing chamber generally includes a planar coil region comprising a concentric coil region comprising a first concentric coil and a second concentric coil, and a power supply circuit coupled to the first concentric coil and the second concentric coil. The first concentric coil may include a first coil with a diameter measured in a direction parallel to a first plane that is smaller than the diameter of a second coil included in the second concentric coil. The power supply circuit may be configured to bias the first concentric coil and the second concentric coil to adjust a generated magnetic field in a region of control of a plasma in the plasma processing chamber to control a plasma density of the plasma.

公开(公告)号：US12057147B2

公开(公告)日：2024-08-06

申请号：US17511741

申请日：2021-10-27

申请人： Seagate Technology LLC

发明人： Tong Zhao ,  Li Wan ,  Michael Christopher Kautzky

IPC分类号： G11B5/31 ,  B81C1/00 ,  B82B1/00 ,  H01F10/30 ,  H01L21/3065 ,  H01L21/67 ,  B82Y10/00 ,  G11B5/00 ,  G11B11/24 ,  H01L21/3213

CPC分类号： G11B5/3163 ,  B81C1/00111 ,  B82B1/003 ,  G11B5/3133 ,  H01F10/30 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/67069 ,  B81C2201/0132 ,  B81C2201/0143 ,  B82Y10/00 ,  G11B2005/0021 ,  G11B11/24 ,  H01L21/32136

摘要： A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a first thickness T1; and ion beam milling the layer of the template material to remove thickness T2, where T2

公开(公告)号：US20240249926A1

公开(公告)日：2024-07-25

申请号：US18293322

申请日：2021-11-11

申请人： JIANGSU LEUVEN INSTRUMENTS CO., LTD.

发明人： Dajian HAN ,  Na LI ,  Taiyan PENG ,  Dongchen CHE ,  Kaidong XU

IPC分类号： H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/32862 ,  H01J37/32449 ,  H01L21/3065 ,  H01J2237/334

摘要： A plasma treatment method, which is applied to a plasma treatment apparatus, wherein the plasma treatment apparatus comprises an ion source cavity (10), and sediment is present in the ion source cavity (10). The plasma treatment method comprises: introducing cleaning gas into an ion source cavity (10) for ionization to generate a first plasma, so that the first plasma reacts with sediment in the ion source cavity (10) to generate a gas compound, which is then discharged, thereby achieving the aim of cleaning the sediment in the ion source cavity (10).

公开(公告)号：US20240249913A1

公开(公告)日：2024-07-25

申请号：US18435576

申请日：2024-02-07

申请人： VELVETCH LLC

发明人： Samir John Anz ,  David Irwin Margolese ,  William Andrew Goddard ,  Stewart Francis Sando

IPC分类号： H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/32045 ,  H01J37/32027 ,  H01L21/3065 ,  H01J2237/3341

摘要： Atomic layer etching of a substrate using a wafer scale wave of precisely controlled electrons is presented. A volume of gaseous plasma including diluent and reactive species and electrons of a uniform steady state composition is generated in a positive column of a DC plasma proximate the substrate. A corrosion layer is formed on the substrate by adsorption of the reactive species to atoms at the surface of the substrate. The substrate is positively biased to draw electrons from the volume to the surface of the substrate and impart an energy to the electrons so to stimulate electron transitions in the corrosion layer species, resulting in ejection of the corrosion layer species via electron stimulation desorption. The substrate is negatively biased to repel the electrons from the surface of the substrate back to the volume, followed by a zero bias to restore the steady state composition of the volume.