公开(公告)号：US12068180B2

公开(公告)日：2024-08-20

申请号：US16247026

申请日：2019-01-14

申请人： Applied Materials, Inc.

发明人： Xuesong Lu ,  Lin Zhang ,  Joseph C. Werner ,  Jang Seok Oh ,  Balaji Pasupathy ,  Michael W. Johnson

IPC分类号： H01L21/67 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  G01K3/00 ,  G01K3/04 ,  G01K3/10 ,  G05B11/00 ,  G05B13/02 ,  G05B15/00 ,  G05B15/02 ,  H01J37/32 ,  H01L21/02 ,  H01L21/687

CPC分类号： H01L21/67248 ,  C23C16/455 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  G01K3/005 ,  G01K3/04 ,  G01K3/10 ,  G05B11/00 ,  G05B13/02 ,  G05B15/00 ,  G05B15/02 ,  H01J37/3244 ,  H01J37/32899 ,  H01L21/02 ,  H01L21/02312 ,  H01L21/67 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67253 ,  H01L21/68742 ,  H01J2237/24585 ,  H01J2237/3321

摘要： Embodiments herein provide methods of monitoring temperatures of fluid delivery conduits for delivering fluids to, and other components external to, a processing volume of a processing chamber used in electronic device fabrication manufacturing, and monitoring systems related thereto. In one embodiment, a method of monitoring a processing system includes receiving, through a data acquisition device, temperature information from one or more temperature sensors and receiving context information from a system controller coupled to a processing system comprising the processing chamber. Here, the one or more temperature sensors are disposed in one or more locations external to a processing volume of a processing chamber. The context information relates to instructions executed by the system controller to control one or more operations of the processing system.

公开(公告)号：US12060640B2

公开(公告)日：2024-08-13

申请号：US17125577

申请日：2020-12-17

申请人： Tokyo Electron Limited

发明人： Yamato Tonegawa ,  Jinseok Kim

IPC分类号： C23C16/00 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52

CPC分类号： C23C16/45536 ,  C23C16/345 ,  C23C16/45544 ,  C23C16/52

摘要： A film forming method includes forming a thin film by executing a plurality of cycles each including supplying a raw material gas to a substrate, supplying a reaction gas capable of reacting with the raw material gas to the substrate, and processing the substrate with deuterium plasma.

公开(公告)号：US20240266164A1

公开(公告)日：2024-08-08

申请号：US18431276

申请日：2024-02-02

申请人： Kokusai Electric Corporation

发明人： Nagisa SUYAMA ,  Hiroyuki KOIDE ,  Tomoya NAGAHASHI

IPC分类号： H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52

CPC分类号： H01L21/02271 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/52

摘要： There is provided a technique that includes: (a) supplying a first process gas to the substrate; and (b) supplying a second process gas from a second reservoir to the substrate, wherein (b) is performed in a manner so as to shorten a time until a successive reaction of the second process gas on the substrate converges.

公开(公告)号：US12057314B2

公开(公告)日：2024-08-06

申请号：US17317965

申请日：2021-05-12

申请人： ASM IP Holding B.V.

发明人： Amir Kajbafvala ,  Peter Westrom ,  Joe Margetis ,  Xin Sun ,  Caleb Miskin ,  Yen Lin Leow ,  Yanfu Lu

IPC分类号： C30B25/16 ,  C23C16/08 ,  C23C16/455 ,  C23C16/52 ,  C30B25/18 ,  C30B29/52 ,  H01L21/02

CPC分类号： H01L21/0262 ,  C23C16/08 ,  C23C16/45512 ,  C23C16/52 ,  C30B25/165 ,  C30B25/186 ,  C30B29/52 ,  H01L21/02532

摘要： A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

公开(公告)号：US12054828B2

公开(公告)日：2024-08-06

申请号：US18082674

申请日：2022-12-16

申请人： TOKYO ELECTRON LIMITED

发明人： Kohei Fukushima

IPC分类号： C23C16/52 ,  C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  H01L21/67 ,  H01L21/673 ,  H01L21/687

CPC分类号： C23C16/52 ,  C23C16/401 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/4583 ,  C23C16/4584 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67393 ,  H01L21/68771

摘要： A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.

公开(公告)号：US20240258085A1

公开(公告)日：2024-08-01

申请号：US18420983

申请日：2024-01-24

申请人： ASM IP Holding B.V.

发明人： Koei Aida

IPC分类号： H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC分类号： H01J37/32834 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32899 ,  H01J2237/332

摘要： A substrate processing apparatus is disclosed. Exemplary substrate processing apparatus includes a plurality of reaction chambers; a gas supply unit configured to provide the reaction chamber with a main gas; a shared exhaust unit configured to exhaust the main gas from the plurality of reaction chambers; a plurality of exhaust gas lines configured to fluidly couple the shared exhaust unit to the plurality of reaction chambers; and a plurality of dilution gas lines configured to provide a dilution gas into the plurality of exhaust gas lines.

公开(公告)号：US20240254625A1

公开(公告)日：2024-08-01

申请号：US18598293

申请日：2024-03-07

申请人： Kokusai Electric Corporation

发明人： Kimihiko NAKATANI ,  Ryuji YAMAMOTO

IPC分类号： C23C16/455 ,  C23C16/52 ,  H01L21/02

CPC分类号： C23C16/45534 ,  C23C16/52 ,  H01L21/02123 ,  H01L21/0228

摘要： There is provided a technique including forming an inhibitor layer on a first surface of a substrate having the first surface and a second surface by supplying a modifying agent to the substrate to adsorb inhibitor molecules contained in the modifying agent on the first surface, and forming a film on the second surface by supplying a film-forming agent containing a catalyst to the substrate after forming the inhibitor layer on the first surface. A width of each of the inhibitor molecules is a, an interval between adsorption sites on the first surface is b, and a width of a catalyst molecule constituting the catalyst is c, where c>b−a is satisfied when a is smaller than b, and c>xb−a (x is the smallest integer that satisfies a

公开(公告)号：US12051567B2

公开(公告)日：2024-07-30

申请号：US17492954

申请日：2021-10-04

申请人： ASM IP Holding B.V.

发明人： Koei Aida

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52

CPC分类号： H01J37/32449 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/52 ,  H01J2237/3321

摘要： A gas supply unit is disclosed. An exemplary gas supply unit includes an upper plate provided with a plurality of injection holes; and a divider plate constructed and arranged against the upper plate to guide a flow of gas from the injection holes; wherein one of the plurality of injection holes is a center injection hole and the other than said one of the plurality of injection holes are arranged concentrically around the center injection hole as outer injection holes; and wherein the divider plate is provided with a center through hole fluidly communicating with the center injection hole and is provided with a plurality of protrusions extending towards the upper plate thereby creating a plurality of zones, each of the zones fluidly communicating with one of the outer injection holes.

公开(公告)号：US20240249933A1

公开(公告)日：2024-07-25

申请号：US18611093

申请日：2024-03-20

申请人： KOKUSAI ELECTRIC CORPORATION

发明人： Katsuyoshi HARADA ,  Ryota UENO ,  Yoshitomo HASHIMOTO ,  Kimihiko NAKATANI

IPC分类号： H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/52 ,  H01L21/311

CPC分类号： H01L21/02164 ,  C23C16/345 ,  C23C16/401 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/31116

摘要： A technology of performing (a) forming a first film in a concave portion by supplying a first film-forming agent to a substrate on a surface of which the concave portion is provided; (b) forming a second film having a chemical composition different from a chemical composition of the first film on the first film formed in the concave portion by supplying a second film-forming agent to the substrate; (c) modifying a part of the second film by supplying a modifying agent containing fluorine to the substrate; and (d) removing a modified portion of the second film by supplying an etching agent containing halogen to the substrate.

公开(公告)号：US20240249923A1

公开(公告)日：2024-07-25

申请号：US18624655

申请日：2024-04-02

申请人： Kokusai Electric Corporation

发明人： Akihiro SATO ,  Tsuyoshi Takeda ,  Yukitomo Hirochi

IPC分类号： H01J37/32 ,  C23C16/458 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01L21/02 ,  H05H1/46

CPC分类号： H01J37/32568 ,  C23C16/4587 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32834 ,  H01L21/0217 ,  H01L21/02274 ,  H05H1/46 ,  H01J2237/327 ,  H01J2237/3323 ,  H01L21/02211 ,  H01L21/0228

摘要： There is provided a substrate processing apparatus that includes a process chamber in which at least one substrate is processed; a gas supplier configured to supply a gas; and a buffer structure. The buffer structure includes at least two plasma generation regions in which gas is converted into plasma by a pair of electrodes connected to a high-frequency power supply and an electrode to be grounded, a first gas supply port that supplies a gas generated in a first plasma generation region among the at least two plasma generation regions, and a second gas supply port that supplies a gas generated in a second plasma generation region among the at least two plasma generation regions.