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公开(公告)号：US12096670B2
公开(公告)日：2024-09-17
申请号：US17625854
申请日：2020-07-08
发明人： Daisuke Kubota , Taisuke Kamada , Ryo Hatsumi , Koji Kusunoki , Kazunori Watanabe , Susumu Kawashima
IPC分类号： H01L51/52 , H10K50/86 , H10K59/35 , H10K59/65 , H10K102/00
CPC分类号： H10K59/353 , H10K50/865 , H10K59/351 , H10K59/352 , H10K59/65 , H10K2102/311
摘要： The resolution of a display apparatus having alight detection function is increased. The display apparatus includes a light-emitting device and a light-emitting and light-receiving device. The light-emitting device includes a first pixel electrode, a first light-emitting layer, and a common electrode; the light-emitting and light-receiving device includes a second pixel electrode, a second light-emitting layer, an active layer, and the common electrode; the active layer includes an organic compound; the first light-emitting layer is positioned between the first pixel electrode and the common electrode; the second light-emitting layer and the active layer are each positioned between the second pixel electrode and the common electrode; the light-emitting device has a function of emitting light of a first color; and the light-emitting and light-receiving device has a function of emitting light of a second color and a function of receiving light of the first color. The light-emitting and light-receiving device functions as both a light-emitting device and a light-receiving device, whereby a pixel can have a light-receiving function without an increase in the number of subpixels included in the pixel. Furthermore, the pixel can be provided with a light-receiving function without a reduction in the resolution of the display apparatus or a reduction in the aperture ratio of each subpixel.
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公开(公告)号：US12095440B2
公开(公告)日：2024-09-17
申请号：US17765046
申请日：2020-10-05
发明人： Kazuaki Ohshima , Hitoshi Kunitake , Yuto Yakubo , Takayuki Ikeda
IPC分类号： H03H7/38 , H01L21/02 , H01L21/822 , H01L27/088 , H03F3/19 , H03F3/60
CPC分类号： H03H7/38 , H01L21/02565 , H01L21/822 , H01L27/088 , H03F3/19 , H03F3/60
摘要： An amplifier is formed in a wiring layer. A semiconductor device includes a second layer over a first layer with a metal oxide therebetween. The first layer includes a first transistor including a first semiconductor layer containing silicon. The second layer includes an impedance matching circuit, and the impedance matching circuit includes a second transistor including a second semiconductor layer containing gallium. The first transistor forms first coupling capacitance between the first transistor and the metal oxide, and the impedance matching circuit forms second coupling capacitance between the impedance matching circuit and the metal oxide. The impedance matching circuit is electrically connected to the metal oxide through the second coupling capacitance. The metal oxide inhibits the influence of first radiation noise emitted from the impedance matching circuit on the operation of the first transistor.
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公开(公告)号：US12094982B2
公开(公告)日：2024-09-17
申请号：US18100200
申请日：2023-01-23
IPC分类号： H01L29/786 , H01L29/24 , H01L29/423
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/42356 , H01L29/78648
摘要： An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.
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公开(公告)号：US12094368B2
公开(公告)日：2024-09-17
申请号：US17346348
申请日：2021-06-14
发明人： Toshiyuki Isa , Akio Endo , Yosuke Tsukamoto , Jun Koyama
CPC分类号： G09F9/301 , G06F1/1626 , G06F1/1643 , G06F1/1652
摘要： An electronic device including a large display region and with improved portability is provided. An electronic device with improved reliability is provided.
An information processing device includes a first film, a panel substrate, and at least a first housing. The panel substrate has flexibility and a display region, and the first film has a visible-light-transmitting property and flexibility. The first housing includes a first slit, the panel substrate includes a region positioned between the first film and a second film, the first slit has a function of storing the region, and one or both of the panel substrate and the first film can slide along the first slit.-
35.发明公开公开(公告)号：US20240304611A1
公开(公告)日：2024-09-12
申请号：US18440172
申请日：2024-02-13
发明人： Shunpei YAMAZAKI , Koji KUSUNOKI , Shingo EGUCHI , Takayuki IKEDA
IPC分类号： H01L25/18 , G06F3/044 , H01L23/00 , H01L25/00 , H01L25/065 , H01L25/16 , H01L27/12 , H01L27/15 , H01L33/00
CPC分类号： H01L25/18 , G06F3/044 , H01L24/94 , H01L25/0657 , H01L25/167 , H01L25/50 , H01L33/0093 , G06F2203/04103 , H01L24/16 , H01L27/1225 , H01L27/156 , H01L2224/16145 , H01L2225/06513 , H01L2924/12041
摘要： A display device with high resolution is provided. A display device with high display quality is provided. The display device includes a substrate, an insulating layer, a plurality of transistors, and a plurality of light-emitting diodes. The plurality of light-emitting diodes are provided in a matrix over the substrate. Each of the plurality of transistors is electrically connected to at least one of the plurality of light-emitting diodes. The plurality of light-emitting diodes are positioned closer to the substrate than the plurality of transistors are. The plurality of light-emitting diodes emit light toward the substrate. Each of the plurality of transistors includes a metal oxide layer and a gate electrode. The metal oxide layer includes a channel formation region. The top surface of the gate electrode is substantially level with the top surface of the insulating layer.
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公开(公告)号：US12087938B2
公开(公告)日：2024-09-10
申请号：US15374048
申请日：2016-12-09
发明人： Hiroyuki Miyake , Nobuhiro Inoue , Ryo Yamauchi , Mako Motoyoshi , Takahiro Kawakami , Mayumi Mikami , Miku Fujita , Shunpei Yamazaki
IPC分类号： H01M4/36 , H01G11/06 , H01G11/28 , H01G11/30 , H01G11/36 , H01G11/50 , H01M4/134 , H01M4/38 , H01M4/62 , H01M10/0525
CPC分类号： H01M4/366 , H01G11/06 , H01G11/28 , H01G11/30 , H01G11/36 , H01G11/50 , H01M4/134 , H01M4/386 , H01M4/626 , H01M10/0525
摘要： A power storage device having high capacitance is provided. A power storage device with excellent cycle characteristics is provided. A power storage device with high charge and discharge efficiency is provided. A power storage device including a negative electrode with low resistance is provided. A negative electrode for a power storage device includes a number of composites in particulate forms. The composites include a negative electrode active material, a first functional material, and a compound. The compound includes a constituent element of the negative electrode active material and a constituent element of the first functional material. The negative electrode active material includes a region in contact with at least one of the first functional material or the compound.
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37.发明授权公开(公告)号：US12087866B2
公开(公告)日：2024-09-10
申请号：US17182269
申请日：2021-02-23
发明人： Kosei Noda
IPC分类号： H01L29/24 , H01L21/425 , H01L29/22 , H01L29/66 , H01L29/786
CPC分类号： H01L29/7869 , H01L21/425 , H01L29/22 , H01L29/24 , H01L29/66969 , H01L29/78696
摘要： A semiconductor device with stable electrical characteristics is provided. Alternatively, a semiconductor device having normally-off electrical characteristics is provided. A semiconductor device includes a gate electrode, a gate insulator, and an oxide semiconductor, the oxide semiconductor contains fluorine in a channel formation region, and a fluorine concentration in the channel formation region is higher than or equal to 1×1020 atoms/cm3 and lower than or equal to 1×1022 atoms/cm3. Note that fluorine is added by an ion implantation method.
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公开(公告)号：US12087824B2
公开(公告)日：2024-09-10
申请号：US18228134
申请日：2023-07-31
IPC分类号： H01L29/24 , H01L29/06 , H01L29/10 , H01L29/423 , H01L29/49 , H01L29/786
CPC分类号： H01L29/24 , H01L29/0692 , H01L29/1037 , H01L29/42384 , H01L29/4908 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： A novel material is provided. A composite oxide semiconductor includes a first region and a second region. The first region contains indium. The second region contains an element M (the element M is one or more of Ga, Al, Hf, Y, and Sn). The first region and the second region are arranged in a mosaic pattern. The composite oxide semiconductor further includes a third region. The element M is gallium. The first region contains indium oxide or indium zinc oxide. The second region contains gallium oxide or gallium zinc oxide. The third region contains zinc oxide.
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公开(公告)号：US12087741B2
公开(公告)日：2024-09-10
申请号：US17055206
申请日：2019-05-08
IPC分类号： H01L25/075 , H01L27/12 , H01L29/786 , H01L33/50 , H01L33/58 , H01L33/62
CPC分类号： H01L25/0753 , H01L27/1225 , H01L29/78651 , H01L29/7869 , H01L33/504 , H01L33/58 , H01L33/62 , H01L2933/0041 , H01L2933/0058 , H01L2933/0066
摘要： A display device with a high luminance, a high contrast, and low power consumption is provided. The display device includes a transistor, a light-emitting element, a coloring layer, a phosphor layer, a first electrode, and a second electrode. The light-emitting element is electrically connected to the first electrode and the second electrode, the first electrode is electrically connected to the transistor, and the second electrode is positioned on the same plane as the first electrode. The coloring layer is positioned over the light-emitting element, the phosphor layer is positioned between the light-emitting element and the coloring layer, and the phosphor layer, the light-emitting element, and the coloring layer include a region in which they overlap with one another. The light-emitting element includes a light-emitting diode chip, and the phosphor layer has a function of emitting light of a complementary color of an emission color of the light-emitting element.
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公开(公告)号：US12082429B2
公开(公告)日：2024-09-03
申请号：US17048642
申请日：2019-10-03
发明人： Satoshi Seo , Tsunenori Suzuki , Takumu Okuyama , Yusuke Takita , Naoaki Hashimoto , Hiromi Seo , Nobuharu Ohsawa , Toshiki Sasaki , Shunpei Yamazaki
IPC分类号： H10K50/11 , H10K50/15 , H10K50/16 , H10K50/17 , H10K85/60 , H10K101/30 , H10K101/40 , H10K85/30 , H10K101/10
CPC分类号： H10K50/11 , H10K50/15 , H10K50/16 , H10K50/17 , H10K85/30 , H10K85/342 , H10K85/615 , H10K85/622 , H10K85/626 , H10K85/636 , H10K85/657 , H10K85/6572 , H10K85/6574 , H10K85/6576 , H10K2101/10 , H10K2101/30 , H10K2101/40
摘要： A novel light-emitting device is provided. Alternatively, a light-emitting device with high emission efficiency is provided. Alternatively, a light-emitting device having a long lifetime is provided. Alternatively, a light-emitting device having low driving voltage is provided. A light-emitting device including an EL layer including a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side is provided. The first layer includes a first organic compound and a second organic compound. The fourth layer includes a seventh organic compound. The first organic compound exhibits an electron-accepting property with respect to the second organic compound. The HOMO level of the second organic compound is from −5.7 eV to −5.4 eV. The HOMO level of the seventh organic compound is −6.0 eV or higher.
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