Abstract:
Disclosed are apparatus and methods of reducing insertion loss, passivation, planarization and in-wafer testing of integrated optical components and in-wafer chips in photonic integrated circuits (PICs).
Abstract:
The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.
Abstract:
A method for fabricating transparent substrate vertical cavity surface emitting lasers ("VCSEL"s) using wafer bonding is described. The VCSELs have their active layers located much more closely to a heat sink than is possible in known absorbing substrate VCSELs. The improved heat transport from the active layer to the heat sink permits higher current operation with increased light output as a result of the lower thermal impedance of the system. Alternatively, the same light output can be obtained from the wafer bonded VCSEL at lower drive currents. Additional embodiments use wafer bonding to improve current crowding, current and/or optical confinement in a VCSEL and to integrate additional optoelectronic devices with the VCSEL.
Abstract:
A Raman pump may include a dual output laser configured to output two optical signals; a delay interferometer configured to delay a first of the two optical signals to decorrelate the two optical signals from each other; and a combiner configured to combine the delayed first of the two optical signals and a second of the two optical signals to provide a Raman amplification signal.
Abstract:
A device may include a number of optical waveguides, each of which being spaced from one another. The optical waveguides may each include at least one curved section and widths of the curved sections of the optical waveguides may be selected to reduce polarization conversion of light traversing the birefringent optical waveguides.
Abstract:
A semiconductor optical amplifier module may include a beam splitter to split an optical signal into two polarization optical signals including a first polarization optical signal with a Transverse Magnetic (TM) polarization provided along a first path of two paths, and a second polarization optical signal with a Transverse Electric (TE) polarization provided along a second path of the two paths; a first rotator to rotate the TM polarization of the first polarization optical signal to TE polarization; a first semiconductor optical amplifier to amplify the rotated first polarization optical signal to output a first resultant optical signal; a second semiconductor optical amplifier to amplify the second polarization optical signal; and a second rotator to rotate the polarization of the amplified second polarization optical signal to output a second resultant optical signal; and a beam combiner to combine the first resultant optical signal and the second resultant optical signal.
Abstract:
A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and a wavelength selective combiner having an input optically coupled to received all the signal outputs from the modulated sources and provide a combined output signal on an output waveguide from the chip. The modulated sources, combiner and output waveguide are all integrated on the same chip.
Abstract:
A high capacity optical transmitter implemented on a photonic integrated circuit chip comprises a single light source which supplies a continuous wave having a particular wavelength to a plurality of modulators to form modulated optical information signals. A phase shifter is coupled to at least one of the modulators and is used to shift the phase of the corresponding modulated optical information signal associated with a particular modulator. A polarization beam combiner receives each of the modulated optical information signals from the modulators and the modulated optical information signal from the phase shifter and combines each of these signals to form a polarization multiplexed differential quadrature phase-shift keying signal. The light source, the plurality of modulators, the phase shifter and the polarization beam combiner are all integrated on the chip.
Abstract:
A high capacity optical transmitter implemented on a photonic integrated circuit chip comprises a single light source which supplies a continuous wave having a particular wavelength to a plurality of modulators to form modulated optical information signals. A phase shifter is coupled to at least one of the modulators and is used to shift the phase of the corresponding modulated optical information signal associated with a particular modulator. A polarization beam combiner receives each of the modulated optical information signals from the modulators and the modulated optical information signal from the phase shifter and combines each of these signals to form a polarization multiplexed differential quadrature phase-shift keying signal. The light source, the plurality of modulators, the phase shifter and the polarization beam combiner are all integrated on the chip.
Abstract:
A photonic integrated circuit that includes a plurality of active and passive components on a substrate where one of the components is an optical combiner/decombiner having at least one free space coupler region and a plurality of longitudinal ridge waveguides each extending in the circuit from a first region of the waveguide and coupled at a second region of the waveguide at the free space coupler region. A first dielectric layer formed over the ridge waveguides and the free space coupler region. The first dielectric layer monotonically increases in cross-sectional thickness from the waveguide first region to the second region to reduce signal insertion losses in transitioning from the ridge waveguides to the free space coupler region. The first dielectric layer may be covered with a second passivation layer. The first dielectric layer may be SiOx, SiNx or SixONy and the second passivation layer may be BCB, ZnS or ZnSe.