Wiring board and method for manufacturing the same
    36.
    发明授权
    Wiring board and method for manufacturing the same 有权
    接线板及其制造方法

    公开(公告)号:US07674989B2

    公开(公告)日:2010-03-09

    申请号:US11449673

    申请日:2006-06-09

    IPC分类号: H01R12/04

    摘要: A wiring board for mounting a semiconductor element or electronic component having a plurality of wiring layers, an insulating layer provided between these wiring layers, and a via which is provided to the insulating layer and which electrically connects the wiring layers. In this wiring board, the cross-sectional shape of the via in the plane parallel to the wiring layers is obtained by the partial overlapping of a plurality of similar shapes (circles). Stable operation can be obtained in a semiconductor element by minimizing obstacles to increased density, effectively increasing the cross-sectional area of the via, and preventing the wiring resistance from increasing by making the cross-sectional shape of the via into a shape obtained by the partial overlapping of a plurality of similar shapes.

    摘要翻译: 一种用于安装具有多个布线层的半导体元件或电子元件的布线板,设置在这些布线层之间的绝缘层,以及设置在绝缘层上并将布线层电连接的通孔。 在该布线板中,通过多个相似形状(圆圈)的部分重叠,获得与布线层平行的平面中的通孔的截面形状。 通过最小化增加密度的障碍物,有效地增加通孔的横截面积,并且通过使通孔的横截面形状成为由通孔形成的形状来防止布线电阻增加,可以在半导体元件中获得稳定的操作 多个类似形状的部分重叠。

    Semiconductor device
    40.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US07348673B2

    公开(公告)日:2008-03-25

    申请号:US11180729

    申请日:2005-07-14

    IPC分类号: H01L23/48

    摘要: A minute wiring structure portion including first wiring layers and first insulating layers, in which each of first wiring layers and each of first insulating layers are alternately laminated, is formed on a semiconductor substrate. A first huge wiring structure portion is formed on the minute wiring structure portion, and the first huge wiring structure portion is formed by successively forming on the minute wiring structure portion, in the following order, the first huge wiring portion including second wiring layers has a thickness of twice or more of the thickness of the first wiring layers and second insulating layers, in which each of second wiring layers and each of second wiring layers are alternately laminated, and a second huge wiring structure portion including third wiring layers has a thickness of twice or more of the thickness of the first wiring layer and a third insulating layer in which the elastic modulus at 25° C. is not more than that of the second insulating layers, each of the third wiring layers and each of the third insulating layers being alternately laminated.

    摘要翻译: 在半导体基板上形成包括第一布线层和第一绝缘层的微小布线结构部分,其中第一布线层和每个第一绝缘层交替层叠。 第一巨型布线结构部分形成在微小布线结构部分上,并且第一巨大的布线结构部分通过在微小的布线结构部分上依次形成,按照以下顺序形成包括第二布线层的第一巨大布线部分具有 其中第二布线层和每个第二布线层交替层叠的第一布线层和第二绝缘层的厚度的两倍或更多的厚度,以及包括第三布线层的第二巨大布线结构部分的厚度为 第一布线层的厚度的2倍以上,25℃下的弹性模量不大于第2绝缘层的弹性模量的第3绝缘层,第3布线层和第3绝缘层 交替层压。