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    ENHANCED ETCHING PROCESSES USING REMOTE PLASMA SOURCES
    31.
    发明申请
    ENHANCED ETCHING PROCESSES USING REMOTE PLASMA SOURCES 有权
    使用远程等离子体源的增强蚀刻工艺

    公开(公告)号：US20140248780A1

    公开(公告)日：2014-09-04

    申请号：US14186059

    申请日：2014-02-21

    Applicant: Applied Materials, Inc.

    Inventor： Nitin K. Ingle ,  Dmitry Lubomirsky ,  Xinglong Chen ,  Shankar Venkataraman

    IPC: H01L21/3065

    CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/334

    Abstract: Methods of etching a patterned substrate may include flowing an oxygen-containing precursor into a first remote plasma region fluidly coupled with a substrate processing region. The oxygen-containing precursor may be flowed into the region while forming a plasma in the first remote plasma region to produce oxygen-containing plasma effluents. The methods may also include flowing a fluorine-containing precursor into a second remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the second remote plasma region to produce fluorine-containing plasma effluents. The methods may include flowing the oxygen-containing plasma effluents and fluorine-containing plasma effluents into the processing region, and using the effluents to etch a patterned substrate housed in the substrate processing region.

    Abstract translation: 蚀刻图案化衬底的方法可以包括使含氧前体流入与衬底处理区流体耦合的第一远程等离子体区域。 可以在第一远程等离子体区域中形成等离子体的同时将含氧前体流入该区域以产生含氧等离子体流出物。 所述方法还可以包括使含氟前体流入与基板处理区流体耦合的第二远程等离子体区域，同时在第二远程等离子体区域中形成等离子体以产生含氟等离子体流出物。 所述方法可以包括将含氧等离子体流出物和含氟等离子体流出物流入处理区域，并且使用流出物蚀刻容纳在基板处理区域中的图案化基板。

    High temperature chuck for plasma processing systems
    34.
    发明授权
    High temperature chuck for plasma processing systems 有权

    公开(公告)号：US10468285B2

    公开(公告)日：2019-11-05

    申请号：US15642977

    申请日：2017-07-06

    Applicant: Applied Materials, Inc.

    Inventor： Toan Q. Tran ,  Sultan Malik ,  Dmitry Lubomirsky ,  Shambhu N. Roy ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Shankar Venkataraman

    IPC: H01L21/683 ,  H01L21/3065 ,  H01L21/67

    Abstract: A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

    Optical emission spectroscopy (OES) for remote plasma monitoring
    36.
    发明授权
    Optical emission spectroscopy (OES) for remote plasma monitoring 有权

    公开(公告)号：US10319649B2

    公开(公告)日：2019-06-11

    申请号：US15484985

    申请日：2017-04-11

    Applicant: Applied Materials, Inc.

    Inventor： Tae Seung Cho ,  Soonam Park ,  Junghoon Kim ,  Dmitry Lubomirsky ,  Shankar Venkataraman

    IPC: H01L21/26 ,  H01L21/66 ,  G01N21/73 ,  H01L21/67 ,  H01J37/32 ,  H01L21/311

    Abstract: Methods and systems for etching substrates using a remote plasma are described. Remotely excited etchants are formed in a remote plasma and flowed through a showerhead into a substrate processing region to etch the substrate. Optical emission spectra are acquired from the substrate processing region just above the substrate. The optical emission spectra may be used to determine an endpoint of the etch, determine the etch rate or otherwise characterize the etch process. A weak plasma may be present in the substrate processing region. The weak plasma may have much lower intensity than the remote plasma. In cases where no bias plasma is used above the substrate in an etch process, a weak plasma may be ignited near a viewport disposed near the side of the substrate processing region to characterize the etchants.

    Highly selective doped oxide removal method
    39.
    发明授权
    Highly selective doped oxide removal method 有权
    高选择性掺杂氧化物去除方法

    公开(公告)号：US09406523B2

    公开(公告)日：2016-08-02

    申请号：US14309625

    申请日：2014-06-19

    Applicant: Applied Materials, Inc.

    Inventor： Zhijun Chen ,  Zihui Li ,  Nitin K. Ingle ,  Anchuan Wang ,  Shankar Venkataraman

    IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/70

    CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/0337 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/70

    Abstract: A method of etching doped silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using partial remote plasma excitation. The remote plasma excites a fluorine-containing precursor and the plasma effluents created are flowed into a substrate processing region. A hydrogen-containing precursor, e.g. water, is concurrently flowed into the substrate processing region without plasma excitation. The plasma effluents are combined with the unexcited hydrogen-containing precursor in the substrate processing region where the combination reacts with the doped silicon oxide. The plasmas effluents react with the patterned heterogeneous structures to selectively remove doped silicon oxide.

    Abstract translation: 描述了在图案化的异质结构上蚀刻掺杂的氧化硅的方法，并且包括使用部分远程等离子体激发的气相蚀刻。 远程等离子体激发含氟前体，产生的等离子体流出物流入基板处理区域。 含氢前体，例如 水同时流入基板处理区域而没有等离子体激发。 将等离子体流出物与基板处理区域中的未喷射含氢前体结合，其中组合与掺杂的氧化硅反应。 等离子体流出物与图案化的异质结构反应以选择性地去除掺杂的氧化硅。

    Integrated oxide recess and floating gate fin trimming
    40.
    发明授权
    Integrated oxide recess and floating gate fin trimming 有权
    集成氧化物凹槽和浮栅鳍片修整

    公开(公告)号：US09378978B2

    公开(公告)日：2016-06-28

    申请号：US14448901

    申请日：2014-07-31

    Applicant: Applied Materials, Inc.

    Inventor： Vinod R. Purayath ,  Randhir Thakur ,  Shankar Venkataraman ,  Nitin K. Ingle

    IPC: H01L21/3213 ,  H01L21/28 ,  H01L29/40 ,  H01L29/423 ,  H01L21/677

    CPC classification number: H01L21/32137 ,  H01J37/32357 ,  H01L21/28035 ,  H01L21/28114 ,  H01L21/28273 ,  H01L21/31116 ,  H01L21/67739 ,  H01L21/76224 ,  H01L29/401 ,  H01L29/42324 ,  H01L29/66825

    Abstract: Methods of etching back shallow trench isolation (STI) dielectric and trimming the exposed floating gate without breaking vacuum are described. The methods include recessing silicon oxide dielectric gapfill to expose vertical sidewalls of polysilicon floating gates. The exposed vertical sidewalls are then isotropically etched to evenly thin the polysilicon floating gates on the same substrate processing mainframe. Both recessing silicon oxide and isotropically etching polysilicon use remotely excited fluorine-containing apparatuses attached to the same mainframe to facilitate performing both operations without an intervening atmospheric exposure. An inter-poly dielectric may then be conformally deposited either on the same mainframe or outside the mainframe.

    Abstract translation: 描述了在不破坏真空的情况下回蚀浅沟槽隔离（STI）电介质和修整暴露的浮动栅极的方法。 这些方法包括凹陷氧化硅电介质间隙填充以暴露多晶硅浮动栅极的垂直侧壁。 然后对暴露的垂直侧壁进行各向同性蚀刻，以在相同的基板处理主机上均匀地稀薄多晶硅浮动栅极。 凹陷氧化硅和各向同性蚀刻多晶硅都使用连接在同一主机上的远程激发的含氟设备，以便于在没有中间大气暴露的情况下进行两种操作。 然后可将多晶硅电介质保形地沉积在同一主机上或主机外部。

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