公开(公告)号：US08980761B2

公开(公告)日：2015-03-17

申请号：US14031371

申请日：2013-09-19

Applicant: Applied Materials, Inc.

Inventor： David T. Or ,  Joshua Collins ,  Mei Chang

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01L21/02057 ,  H01L21/31116

Abstract: Methods for processing a substrate are described herein. Methods can include positioning a substrate comprising silicon in a processing chamber, delivering a plasma to the surface of the substrate while biasing the substrate, exposing the surface of the substrate to ammonium fluoride (NH4F), and annealing the substrate to a first temperature to sublimate one or more volatile byproducts.

Abstract translation: 本文描述了用于处理衬底的方法。 方法可以包括将包含硅的衬底定位在处理室中，将等离子体传送到衬底的表面，同时偏置衬底，将衬底的表面暴露于氟化铵（NH 4 F），并将衬底退火到第一温度以升华 一种或多种挥发性副产物。

公开(公告)号：US08927059B2

公开(公告)日：2015-01-06

申请号：US13669571

申请日：2012-11-06

Applicant: Applied Materials, Inc.

Inventor： Xinliang Lu ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang ,  Seshadri Ganguli ,  Wei Tang ,  Srinivas Gandikota ,  Atif Noori

IPC: C23C16/06 ,  C23C16/08 ,  C23C16/10 ,  C23C16/22 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC classification number: C23C16/455 ,  C23C16/06 ,  C23C16/45525 ,  H01L21/28562 ,  H01L21/76841

Abstract: Methods of depositing pure metal and aluminum alloy metal films. Certain methods comprises contacting a substrate surface with first and second precursors, the first precursor comprising an aluminum precursor selected from dimethylaluminum hydride, alane coordinated to an amine, and a compound having a structure represented by: wherein R is a C1-C6 alkyl group, and the second precursor comprising a metal halide. Other methods relate to sequentially exposing a substrate to a first and second precursor, the first precursor comprising an aluminum precursor as described above, and the second precursor comprising Ti(NR′2)4 or Ta(NR′2)5, wherein R′ is an alkyl, alkenyl, alkynyl, keto or aldehyde group.

Abstract translation: 沉积纯金属和铝合金金属膜的方法。 某些方法包括使基材表面与第一和第二前体接触，第一前体包含选自二甲基氢化铝，与胺配位的烷烃的铝前驱物和具有下列结构的化合物：其中R是C1-C6烷基， 并且第二前体包含金属卤化物。 其它方法涉及将衬底顺序地暴露于第一和第二前体，第一前体包含如上所述的铝前体，第二前体包含Ti（NR'2）4或Ta（NR'2）5，其中R' 是烷基，烯基，炔基，酮基或醛基。

公开(公告)号：US11628456B2

公开(公告)日：2023-04-18

申请号：US17350353

申请日：2021-06-17

Applicant: Applied Materials, Inc.

Inventor： Kenric Choi ,  Xiaoxiong Yuan ,  Daping Yao ,  Mei Chang

IPC: C23C16/448 ,  B05B7/24 ,  B05B7/00 ,  B65D1/09 ,  H01L21/68 ,  H01L21/67

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The inlet port has a showerhead that the end within the container. The showerhead has at least two angled nozzles to direct the flow of gas within the cavity so that the gas flow is not perpendicular to the surface of a liquid within the ampoule.

公开(公告)号：US11355391B2

公开(公告)日：2022-06-07

申请号：US16803842

申请日：2020-02-27

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Feiyue Ma ,  Kai Wu ,  Yu Lei ,  Kazuya Daito ,  Yi Xu ,  Vikash Banthia ,  Mei Chang ,  He Ren ,  Raymond Hoiman Hung ,  Yakuan Yao ,  Avgerinos V. Gelatos ,  David T. Or ,  Jing Zhou ,  Guoqiang Jian ,  Chi-Chou Lin ,  Yiming Lai ,  Jia Ye ,  Jenn-Yue Wang

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3213

Abstract: The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.

公开(公告)号：US20210308703A1

公开(公告)日：2021-10-07

申请号：US17350353

申请日：2021-06-17

Applicant: Applied Materials, Inc.

Inventor： Kenric Choi ,  Xiaoxiong Yuan ,  Daping Yao ,  Mei Chang

IPC: B05B7/24 ,  B05B7/00 ,  B65D1/09 ,  C23C16/448 ,  H01L21/68

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The inlet port has a showerhead that the end within the container. The showerhead has at least two angled nozzles to direct the flow of gas within the cavity so that the gas flow is not perpendicular to the surface of a liquid within the ampoule.

公开(公告)号：US10784157B2

公开(公告)日：2020-09-22

申请号：US13689871

申请日：2012-11-30

Applicant: Applied Materials, Inc.

Inventor： Annamalai Lakshmanan ,  Paul F. Ma ,  Mei Chang ,  Jennifer Shan

IPC: H01L21/768 ,  H01L23/538 ,  H01L21/285 ,  H01L23/532

Abstract: Described are doped TaN films, as well as methods for providing the doped TaN films. Doping TaN films with Ru, Cu, Co, Mn, Al, Mg, Cr, Nb, Ti and/or V allows for enhanced copper barrier properties of the TaN films. Also described are methods of providing films with a first layer comprising doped TaN and a second layer comprising one or more of Ru and Co, with optional doping of the second layer.

公开(公告)号：US10763090B2

公开(公告)日：2020-09-01

申请号：US15237414

申请日：2016-08-15

Applicant: Applied Materials, Inc.

Inventor： Adolph Miller Allen ,  Lara Hawrylchak ,  Zhigang Xie ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Xianmin Tang ,  Zhendong Liu ,  Tza-Jing Gung ,  Srinivas Gandikota ,  Mei Chang ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Zhenbin Ge

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  C23C14/56 ,  H01J37/32

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

公开(公告)号：US10559578B2

公开(公告)日：2020-02-11

申请号：US15995693

申请日：2018-06-01

Applicant: Applied Materials, Inc.

Inventor： Jacqueline S. Wrench ,  Jing Zhou ,  Fuqun Grace Vasiknanonte ,  Jiang Lu ,  Paul F. Ma ,  Nobuyuki Sasaki ,  Sree Rangasai V. Kesapragada ,  Sang Ho Yu ,  Mei Chang

IPC: H01L21/00 ,  H01L27/11551 ,  H01L27/11578 ,  H01L21/285 ,  H01L21/8229 ,  H01L21/8239 ,  H01L21/822

Abstract: Embodiments of the invention provide methods of processing a substrate having a stack of spaced oxide layers with gaps between the oxide layers. A metallic nucleation layer is formed in the gaps and a cobalt film is deposited on the nucleation layer to form wordlines.

公开(公告)号：US10453657B2

公开(公告)日：2019-10-22

申请号：US15642002

申请日：2017-07-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Daping Yao ,  Hyman W. H. Lam ,  John C. Forster ,  Jiang Lu ,  Can Xu ,  Dien-Yeh Wu ,  Paul F. Ma ,  Mei Chang

IPC: H01J37/32 ,  C23C16/513 ,  C23C16/505 ,  C23C16/52 ,  C23C16/455 ,  C23C16/509 ,  C23C16/06

Abstract: Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.

公开(公告)号：US20190210061A1

公开(公告)日：2019-07-11

申请号：US16242184

申请日：2019-01-08

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Song-Moon Suh ,  Liqi Wu ,  Michael S. Jackson ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Paul F. Ma ,  Mei Chang

IPC: B05D3/04 ,  B05D1/00 ,  C23C16/455 ,  C23C16/04

CPC classification number: B05D3/044 ,  B05D1/60 ,  B05D3/0453 ,  C23C16/042 ,  C23C16/45544 ,  C23C16/45563

Abstract: Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.