公开(公告)号：US20100309943A1

公开(公告)日：2010-12-09

申请号：US12795360

申请日：2010-06-07

申请人： Arpan Chakraborty ,  You-Da Lin ,  Shuji Nakamura ,  Steven P. DenBaars

发明人： Arpan Chakraborty ,  You-Da Lin ,  Shuji Nakamura ,  Steven P. DenBaars

IPC分类号： H01S5/00 ,  H01L21/20

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/2022 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3216

摘要： A laser diode, grown on a miscut nonpolar or semipolar substrate, with lower threshold current density and longer stimulated emission wavelength, compared to conventional laser diode structures, wherein the laser diode's (1) n-type layers are grown in a nitrogen carrier gas, (2) quantum well layers and barrier layers are grown at a slower growth rate as compared to other device layers (enabling growth of the p-type layers at higher temperature), (3) high Al content electron blocking layer enables growth of layers above the active region at a higher temperature, and (4) asymmetric AlGaN SPSLS allowed growth of high Al containing p-AlGaN layers. Various other techniques were used to improve the conductivity of the p-type layers and minimize the contact resistance of the contact layer.

摘要翻译： 与常规激光二极管结构相比，激光二极管（1）n型层在氮载气中生长，其中激光二极管生长在杂交非极性或半极性衬底上，具有较低的阈值电流密度和较长的受激发射波长， （2）与其他器件层相比，量子阱层和阻挡层以较慢的生长速率生长（使得能够在较高温度下生长p型层），（3）高Al含量的电子阻挡层能使上述层生长 在较高温度下的有源区，和（4）不对称的AlGaN SPSLS允许含高Al含量的p-AlGaN层的生长。 使用各种其它技术来改善p型层的导电性并使接触层的接触电阻最小化。

公开(公告)号：US20100195684A1

公开(公告)日：2010-08-05

申请号：US12697857

申请日：2010-02-01

申请人： Adele C. Tamboli ,  Evelyn L. Hu ,  Steven P. DenBaars ,  Arpan Chakraborty

发明人： Adele C. Tamboli ,  Evelyn L. Hu ,  Steven P. DenBaars ,  Arpan Chakraborty

IPC分类号： H01S5/323 ,  H01L21/66 ,  H01L21/302 ,  H01L21/306

CPC分类号： H01L21/3063 ,  H01S5/0201 ,  H01S5/0203 ,  H01S5/021 ,  H01S5/32341

摘要： A method for fabricating a semiconductor laser device, by etching facets using a photoelectrochemical (PEC) etch, so that the facets are sufficiently smooth to support optical modes within a cavity bounded by the facets.

摘要翻译： 一种制造半导体激光器件的方法，通过使用光电化学（PEC）蚀刻的蚀刻刻面，使得所述刻面足够光滑以支持由该刻面限定的空腔内的光学模式。

公开(公告)号：US20100079059A1

公开(公告)日：2010-04-01

申请号：US12491654

申请日：2009-06-25

申请人： John Roberts ,  Gerald H. Negley ,  Antony P. van de Ven ,  Arpan Chakraborty ,  Bernd Keller ,  Ronan P. Le Toquin

发明人： John Roberts ,  Gerald H. Negley ,  Antony P. van de Ven ,  Arpan Chakraborty ,  Bernd Keller ,  Ronan P. Le Toquin

IPC分类号： H01J63/04

CPC分类号： F21K9/00 ,  F21S4/20 ,  F21Y2103/10 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/50 ,  H01L2924/0002 ,  Y10S362/80 ,  H01L2924/00

摘要： A solid state lighting apparatus includes a plurality of light emitting diodes (LEDs) including at least a first LED and a second LED. Chromaticities of the first and second LEDs are selected so that a combined light generated by a mixture of light from the pair of LEDs has about a target chromaticity. The first LED may include a first LED chip that emits light in the blue portion of the visible spectrum and a phosphor that emits red light in response to blue light emitted by the first LED chip. The second LED emits light having a color point that is above the planckian locus of a 1931 CIE Chromaticity diagram, and in particular may have a yellow green, greenish yellow or green hue.

摘要翻译： 固态照明装置包括至少包括第一LED和第二LED的多个发光二极管（LED）。 选择第一和第二LED的色度，使得由来自该对LED的光的混合产生的组合光具​​有约目标色度。 第一LED可以包括发射可见光谱的蓝色部分中的光的第一LED芯片和响应于由第一LED芯片发射的蓝光发射红光的荧光体。 第二个LED发出具有高于1931 CIE色度图的平底轨迹的色点的光，特别是可以具有黄绿色，绿黄色或绿色。

公开(公告)号：US20090272996A1

公开(公告)日：2009-11-05

申请号：US12151089

申请日：2008-05-02

申请人： Arpan Chakraborty

发明人： Arpan Chakraborty

IPC分类号： H01L33/00

CPC分类号： H01L33/501 ,  H01L33/56 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

摘要： An improved light emitting device, especially a phosphor-converted white light device, wherein the light extraction efficiency and the color temperature distribution uniformity are improved by the introduction of both nanoparticles and light scattering particles proximate to the light source. Nanoparticles having a high index of refraction are dispersed throughout a wavelength conversion layer to adjust the index of refraction of the layer for improved light extraction. Light scattering particles may be dispersed in the wavelength conversion layer and/or in a surrounding medium to improve the spatial correlated color temperature uniformity.

摘要翻译： 改进的发光器件，特别是磷光体转换的白光器件，其中通过引入接近光源的纳米颗粒和光散射粒子来提高光提取效率和色温分布均匀性。 具有高折射率的纳米粒子分散在整个波长转换层中，以调整该层的折射率以改善光提取。 光散射颗粒可以分散在波长转换层和/或周围介质中以改善空间相关色温均匀性。

公开(公告)号：US20090057690A1

公开(公告)日：2009-03-05

申请号：US12287764

申请日：2008-10-13

申请人： Arpan Chakraborty

发明人： Arpan Chakraborty

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/44 ,  H01L23/3114 ,  H01L33/38 ,  H01L33/504 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0041

摘要： Methods for wafer level fabricating of light emitting diode (LED) chips are disclosed with one embodiment of a method according to the present invention comprising providing a plurality of LEDs and then coating of the LEDs with a layer of first conversion material so that at least some light from the LEDs passes through the first conversion material. The light is converted to different wavelengths of light having a first conversion material emission spectrum. The LEDs are then coated with a layer of second conversion material arranged on the first layer of conversion. The second conversion material has a wavelength excitation spectrum, and at least some light from the LEDs passes through the second conversion material and is converted. The first conversion material emission spectrum does not substantially overlap with the second conversion material excitation spectrum. Methods according to the present invention can also be used in wafer level fabrication of LED chips and LED packages with pedestals for electrically contacting the LEDs through the conversion coatings.

摘要翻译： 公开了根据本发明的方法的一个实施例的用于发光二极管（LED）芯片的晶片级制造的方法，包括提供多个LED，然后用一层第一转换材料涂覆LED，使得至少一些 来自LED的光通过第一转换材料。 光被转换成具有第一转换材料发射光谱的不同波长的光。 然后用布置在第一转换层上的第二转换材料层涂覆LED。 第二转换材料具有波长激发光谱，并且来自LED的至少一些光通过第二转换材料并被转换。 第一转换材料发射光谱基本上不与第二转换材料激发光谱重叠。 根据本发明的方法也可用于具有用于通过转换涂层电接触LED的基座的LED芯片和LED封装的晶片级制造。

公开(公告)号：US09159553B2

公开(公告)日：2015-10-13

申请号：US12861532

申请日：2010-08-23

申请人： Hiroaki Ohta ,  Feng Wu ,  Anurag Tyagi ,  Arpan Chakraborty ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura ,  Erin C. Young

发明人： Hiroaki Ohta ,  Feng Wu ,  Anurag Tyagi ,  Arpan Chakraborty ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura ,  Erin C. Young

IPC分类号： H01S5/00 ,  H01L21/02 ,  B82Y20/00 ,  H01L33/00 ,  H01S5/32 ,  H01S5/343 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01S5/20 ,  H01S5/22

CPC分类号： H01L21/0254 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/173

摘要： A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.

摘要翻译： 具有松散晶格常数的无位错高质量模板，通过空间限制异质界面周围的错配位错制造。 这可以用作高In组合设备的模板层。 具体地说，本发明制备了高质量的InGaN模板（In组成为约5-10％），并且可以在这些模板上生长比其它模板高得多的In-InGaN量子阱（QW）（或多量子阱（MQW）） 有可能

公开(公告)号：US08916890B2

公开(公告)日：2014-12-23

申请号：US12051212

申请日：2008-03-19

申请人： Arpan Chakraborty

发明人： Arpan Chakraborty

IPC分类号： H01L33/00 ,  H01L33/50 ,  H01L33/44 ,  H01L33/46

CPC分类号： H01L33/50 ,  H01L33/44 ,  H01L33/46 ,  H01L33/508 ,  H01L2924/0002 ,  H01L2924/00

摘要： LED chips including an LED layer or layers capable of emitting light of a first wavelength, a light conversion layer on the LED capable of converting at least a portion of the light of a first wavelength to light of a second wavelength, and a filter layer therebetween that is transmissive to light of a first wavelength and reflective to light of a second wavelength. The filter layer may prevent at least some of the light of a second wavelength from entering the LED layer or layers, where it may be subject to various optical losses, such as internal reflection and absorption. LED chips may also include multiple filter and light conversion layers. Methods of fabrication are also disclosed.

摘要翻译： 包括能够发射第一波长的光的LED层的LED芯片，能够将第一波长的光的至少一部分的至少一部分转换为第二波长的光的LED上的光转换层以及其间的滤光层 其对第一波长的光透射并反射到第二波长的光。 滤光层可以防止第二波长的至少一些光进入LED层或层，其中它可能经受各种光损耗，例如内部反射和吸收。 LED芯片还可以包括多个滤光器和光转换层。 还公开了制造方法。

公开(公告)号：US08263500B2

公开(公告)日：2012-09-11

申请号：US12697857

申请日：2010-02-01

申请人： Adele C. Tamboli ,  Evelyn L. Hu ,  Steven P. DenBaars ,  Arpan Chakraborty

发明人： Adele C. Tamboli ,  Evelyn L. Hu ,  Steven P. DenBaars ,  Arpan Chakraborty

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3063 ,  H01S5/0201 ,  H01S5/0203 ,  H01S5/021 ,  H01S5/32341

摘要： A method for fabricating a semiconductor laser device, by etching facets using a photoelectrochemical (PEC) etch, so that the facets are sufficiently smooth to support optical modes within a cavity bounded by the facets.

摘要翻译： 一种制造半导体激光器件的方法，通过使用光电化学（PEC）蚀刻的蚀刻刻面，使得所述刻面足够光滑以支持由该刻面限定的空腔内的光学模式。

公开(公告)号：US20120187412A1

公开(公告)日：2012-07-26

申请号：US13012674

申请日：2011-01-24

申请人： Mark P. D'Evelyn ,  Arpan Chakraborty ,  William Houck

发明人： Mark P. D'Evelyn ,  Arpan Chakraborty ,  William Houck

IPC分类号： H01L29/20

CPC分类号： H01L33/32 ,  H01L21/6835 ,  H01L21/76254 ,  H01L24/29 ,  H01L24/83 ,  H01L29/02 ,  H01L29/0692 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/50 ,  H01L2221/68327 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/83193 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/00014 ,  H01L2924/00

摘要： A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.

摘要翻译： 含镓和氮的衬底结构包括具有第一表面和第二表面以及转移的镓和氮材料厚度的手柄衬底构件。 该结构具有生长在转移厚度上的含镓和氮的活性区域和形成在手柄衬底构件的一部分内的凹陷区域。 衬底结构具有形成在凹陷区域内的导电材料，其被配置为从至少转移的镓和氮材料的厚度传递热能。

公开(公告)号：US20110089399A1

公开(公告)日：2011-04-21

申请号：US12901838

申请日：2010-10-11

申请人： Arpan Chakraborty ,  You-Da Lin ,  Shuji Nakamura ,  Steven P. DenBaars

发明人： Arpan Chakraborty ,  You-Da Lin ,  Shuji Nakamura ,  Steven P. DenBaars

IPC分类号： H01L33/04 ,  H01L33/30

CPC分类号： H01L33/06 ,  H01L33/32

摘要： A light emitting device with a stair quantum well structure in an active region. The stair quantum well structure may include a primary well and a single step or multiple steps. The light emitting device may be a nonpolar, semipolar or polar (Al,Ga,In)N based light emitting device. The stair quantum structure improves the radiative efficiency of the light emitting device.

摘要翻译： 一种在有源区域中具有阶梯量子阱结构的发光器件。 台阶量子阱结构可以包括主井和单步骤或多个步骤。 发光器件可以是非极性，半极性或极性（Al，Ga，In）N基发光器件。 楼梯量子结构提高了发光器件的辐射效率。