公开(公告)号：US20200316724A1

公开(公告)日：2020-10-08

申请号：US16909299

申请日：2020-06-23

Applicant: Cree, Inc.

Inventor： Matthew Donofrio ,  John Edmond ,  Harshad Golakia

IPC: B23K26/53 ,  B23K26/06 ,  B23K26/08 ,  B23K26/359 ,  H01L21/02 ,  H01L21/268 ,  H01L21/306 ,  H01L21/67 ,  H01L21/683 ,  H01L21/82 ,  H01L29/16 ,  B23K26/00

Abstract: A method for processing a crystalline substrate to form multiple patterns of subsurface laser damage facilitates subsequent fracture of the substrate to yield first and second substrate portions of reduced thickness. Multiple (e.g., two, three, or more) groups of parallel lines of multiple subsurface laser damage patterns may be sequentially interspersed with one another, with at least some lines of different groups not crossing one another. Certain implementations include formation of multiple subsurface laser damage patterns including groups of parallel lines that are non-parallel to one another, but with each line remaining within ±5 degrees of perpendicular to the direction of a hexagonal crystal structure of a material of the substrate. Further methods involve formation of initial and subsequent subsurface laser damage patterns that are centered at different depths within an interior of a substrate, with the subsurface laser damage patterns being registered with one another and having vertical extents that are overlapping.

公开(公告)号：US20200211850A1

公开(公告)日：2020-07-02

申请号：US16274045

申请日：2019-02-12

Applicant: Cree, Inc.

Inventor： Matthew Donofrio ,  John Edmond ,  Hua-Shuang Kong ,  Elif Balkas

IPC: H01L21/18 ,  H01L21/02 ,  B23K26/00 ,  H01L21/20

Abstract: A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 μm thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25° C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.

公开(公告)号：US10576585B1

公开(公告)日：2020-03-03

申请号：US16274064

申请日：2019-02-12

Applicant: Cree, Inc.

Inventor： Matthew Donofrio ,  John Edmond ,  Harshad Golakia

IPC: H01L29/16 ,  H01L21/67 ,  B23K26/53 ,  H01L21/268 ,  H01L21/683 ,  H01L21/02 ,  H01L21/82 ,  H01L21/306 ,  B23K26/00 ,  B23K26/06 ,  B23K26/08 ,  B23K26/359 ,  B23K103/00 ,  B23K101/40

Abstract: A method for processing a crystalline substrate to form multiple patterns of subsurface laser damage facilitates subsequent fracture of the substrate to yield first and second substrate portions of reduced thickness. Multiple (e.g., two, three, or more) groups of parallel lines of multiple subsurface laser damage patterns may be sequentially interspersed with one another, with at least some lines of different groups not crossing one another. Certain implementations include formation of multiple subsurface laser damage patterns including groups of parallel lines that are non-parallel to one another, but with each line remaining within ±5 degrees of perpendicular to the direction of a hexagonal crystal structure of a material of the substrate. Further methods involve formation of initial and subsequent subsurface laser damage patterns that are centered at different depths within an interior of a substrate, with the subsurface laser damage patterns being registered with one another and having vertical extents that are overlapping.

公开(公告)号：US10283681B2

公开(公告)日：2019-05-07

申请号：US14120297

申请日：2014-05-14

Applicant: Cree, Inc.

Inventor： Brian T. Collins ,  Matthew Donofrio ,  Kevin W. Haberern ,  Bennett Langsdorf ,  Anoop Mathew ,  Harry A. Seibel ,  Iliya Todorov ,  Bradley E. Williams

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/44

Abstract: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.

公开(公告)号：US20170309778A1

公开(公告)日：2017-10-26

申请号：US15647823

申请日：2017-07-12

Applicant: Cree, Inc.

Inventor： Kevin W. Haberern ,  Matthew Donofrio ,  Bennett Langsdorf ,  Thomas Place ,  Michael John Bergmann

IPC: H01L33/08 ,  H01L25/075 ,  H01L33/40 ,  H01L33/46

CPC classification number: H01L33/08 ,  H01L25/0753 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

公开(公告)号：US20170098746A1

公开(公告)日：2017-04-06

申请号：US15280438

申请日：2016-09-29

Applicant: Cree, Inc.

Inventor： Michael John Bergmann ,  Matthew Donofrio ,  Peter Scott Andrews ,  Colin Blakely ,  Troy Gould ,  Jack Vu

IPC: H01L33/60 ,  H01L33/20 ,  H01L33/48 ,  H01L33/32 ,  H01L33/06 ,  H01L33/10 ,  H01L33/62

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L25/167 ,  H01L33/06 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L33/486 ,  H01L33/505 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2933/0041

Abstract: Flip chip LEDs incorporate multi-layer reflectors and light transmissive substrates patterned along an internal surface adjacent to semiconductor layers. A multi-layer reflector may include a metal layer and a dielectric layer containing conductive vias. Portions of a multi-layer reflector may wrap around a LED mesa including an active region, while being covered with passivation material. A substrate patterned along an internal surface together with a multi-layer reflector enables reduction of optical losses. A light transmissive fillet material proximate to edge emitting surfaces of an emitter chip may enable adequate coverage with lumiphoric material. An emitter chip may be elevated with increased thickness of solder material and/or contacts, and may reduce luminous flux loss when reflective materials are present on a submount. Methods for coating emitter chips with lumiphoric material include one or more of angled spray coating, fillet formation prior to spray coating, stencil island coating, and releasable tape coating.

公开(公告)号：US20150037918A1

公开(公告)日：2015-02-05

申请号：US14519746

申请日：2014-10-21

Applicant: Cree, Inc.

Inventor： Matthew Donofrio

IPC: H01L33/22 ,  H01L33/32

CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/42

Abstract: An LED includes a mesa having a Group III Nitride mesa face and a mesa sidewall, on an underlying LED structure. The mesa face includes Group III Nitride surface features having tops that are defined by mask features, having bottoms, and having sides that extend along crystal planes of the Group III Nitride. The mask features may include a two-dimensional array of dots that are spaced apart from one another. Related fabrication methods are also disclosed.

Abstract translation: LED包括在下面的LED结构上具有III族氮化物台面和台面侧壁的台面。 台面包括III型氮化物表面特征，其具有由掩模特征限定的顶部，具有底部，并且具有沿III族氮化物的晶面延伸的侧面。 掩模特征可以包括彼此间隔开的二维点阵列。 还公开了相关的制造方法。

公开(公告)号：US08896008B2

公开(公告)日：2014-11-25

申请号：US13868361

申请日：2013-04-23

Applicant: Cree, Inc.

Inventor： Matthew Donofrio

IPC: H01L33/46 ,  H01L33/22 ,  H01L33/32 ,  H01L33/20 ,  H01L33/42 ,  H01L33/38

CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/42

Abstract: An LED includes a mesa having a Group III Nitride mesa face and a mesa sidewall, on an underlying LED structure. The mesa face includes Group III Nitride surface features having tops that are defined by mask features, having bottoms, and having sides that extend along crystal planes of the Group III Nitride. The mask features may include a two-dimensional array of dots that are spaced apart from one another. Related fabrication methods are also disclosed.

Abstract translation: LED包括在下面的LED结构上具有III族氮化物台面和台面侧壁的台面。 台面包括III型氮化物表面特征，其具有由掩模特征限定的顶部，具有底部，并且具有沿III族氮化物的晶面延伸的侧面。 掩模特征可以包括彼此间隔开的二维点阵列。 还公开了相关的制造方法。

公开(公告)号：US20130328096A1

公开(公告)日：2013-12-12

申请号：US13790369

申请日：2013-03-08

Applicant: CREE, INC.

Inventor： Matthew Donofrio ,  Michael Bergmann ,  Kevln Haberern ,  Kevin Schneider

IPC: H01L33/12

CPC classification number: H01L33/12 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0025 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A light emitting device includes an epitaxial region, an insulating layer on the epitaxial region, a bond pad on the insulating layer, and a crack reducing feature in the insulating layer. The crack reducing feature is configured to reduce the propagation of cracks in the insulating layer to an outside surface of the insulating layer. Related methods are also disclosed.

Abstract translation: 发光器件包括外延区域，外延区域上的绝缘层，绝缘层上的接合焊盘以及绝缘层中的裂纹减少特征。 裂纹减少特征被配置为减小绝缘层中的裂纹到绝缘层的外表面的传播。 还公开了相关方法。

公开(公告)号：US11387221B2

公开(公告)日：2022-07-12

申请号：US16950142

申请日：2020-11-17

Applicant: Cree, Inc.

Inventor： John Edmond ,  Matthew Donofrio ,  Jesse Reiherzer ,  Peter Scott Andrews ,  Joseph G. Clark ,  Kevin Haberern

IPC: H01L25/075 ,  H01L25/00 ,  H01L27/15 ,  H01L33/46 ,  H01L33/50 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L33/38 ,  H01L33/44 ,  H01L33/00

Abstract: At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.