公开(公告)号：US09393645B2

公开(公告)日：2016-07-19

申请号：US13700294

申请日：2011-07-28

申请人： Takuto Yamaguchi ,  Masahide Okamoto ,  Osamu Ikeda ,  Hiromitsu Kuroda ,  Kazuma Kuroki ,  Shohei Hata ,  Yuichi Oda

发明人： Takuto Yamaguchi ,  Masahide Okamoto ,  Osamu Ikeda ,  Hiromitsu Kuroda ,  Kazuma Kuroki ,  Shohei Hata ,  Yuichi Oda

IPC分类号： B21B3/00 ,  B23K35/00 ,  B23K35/02 ,  B23K1/00 ,  B23K35/28 ,  B23K35/30 ,  B23K35/38 ,  B32B15/01 ,  C22C5/02 ,  C22C9/00 ,  C22F1/00 ,  C22F1/04 ,  C22F1/08 ,  C22F1/16 ,  H01L21/50 ,  H01L23/06 ,  H01L23/10 ,  H01L23/373 ,  H01L23/495 ,  H01L23/00 ,  H01L23/31

CPC分类号： B23K35/0238 ,  B21B3/00 ,  B23K1/0016 ,  B23K35/282 ,  B23K35/286 ,  B23K35/302 ,  B23K35/38 ,  B23K35/383 ,  B23K2101/40 ,  B32B15/017 ,  B32B15/018 ,  C22C5/02 ,  C22C9/00 ,  C22F1/00 ,  C22F1/04 ,  C22F1/08 ,  C22F1/165 ,  H01L21/50 ,  H01L23/06 ,  H01L23/10 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/49513 ,  H01L23/49582 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L2224/2784 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/838 ,  H01L2224/8382 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/013 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/181 ,  Y10T428/12708 ,  Y10T428/12736 ,  Y10T428/12792 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/83205

摘要： The disclosed junction material, manufacturing method thereof, and manufacturing method of junction structure utilize lead-free materials and ensure a high reliability of the junction between a semiconductor element and a frame or substrate, or, between a metal plate and another metal plate. For junctions between a semiconductor element and a frame or substrate, by using as the JUNCTION MATERIAL a laminate material comprising a Zn-based metallic layer (101), Al-based metallic layers (102a, 102b) on both sides thereof, and X-based metallic layers (103a, 103b) (X=Cu, Au, Ag or Sn) on the outside of both the Al-based metallic layers (102a, 102b), even in an oxygen-rich environment, the superficial X-based metallic layers protect the Zn and Al from oxidation until said junction material melts, preserving the wettability and bondability of said junction material as solder and securing the high reliability of the junction.

摘要翻译： 所公开的连接材料，其制造方法和接合结构的制造方法利用无铅材料，并确保半导体元件与框架或基板之间或者金属板与另一金属板之间的接合部的高可靠性。 对于半导体元件和框架或基板之间的接合，通过使用作为连接材料的层叠材料，其包含Zn基金属层（101），其两侧上的Al基金属层（102a，102b）和X- 即使在富含氧的环境下，Al基金属层（102a，102b）外侧的金属基金属层（103a，103b）（X = Cu，Au，Ag或Sn），表面的X系金属 层保护Zn和Al免于氧化，直到所述接合材料熔化，保持所述接合材料作为焊料的润湿性和粘合性，并确保接合部的高可靠性。

公开(公告)号：US08845829B2

公开(公告)日：2014-09-30

申请号：US12716766

申请日：2010-03-03

申请人： Seigi Aoyama ,  Takaaki Ichikawa ,  Hiroyoshi Hiruta ,  Hiromitsu Kuroda

发明人： Seigi Aoyama ,  Takaaki Ichikawa ,  Hiroyoshi Hiruta ,  Hiromitsu Kuroda

IPC分类号： C22C9/02 ,  C22F1/08 ,  B60M1/13

CPC分类号： C22C9/02 ,  C22F1/08

摘要： A method of manufacturing a Cu alloy conductor includes the steps of: adding and dissolving In of 0.1-0.7 weight % to a Cu matrix containing oxygen of 0.001-0.1 weight % (10-1000 weight ppm) to form a molten Cu alloy, performing a continuous casting with the molten Cu alloy, rapidly quenching a casting material to a temperature by at least 15° C. or more lower than a melting point of molten Cu alloy, controlling the casting material at a temperature equal to or lower than 900° C., and performing a plurality of hot rolling processes to the casting material such that a temperature of a final hot rolling is within a range of from 500 to 600° C. to form the rolled material.

摘要翻译： 制造Cu合金导体的方法包括以下步骤：向含有0.001-0.1重量％（10-1000重量ppm）的氧的Cu基质中添加和溶解0.1-0.7重量％的In以形成熔融的Cu合金，进行 与熔融的Cu合金连续铸造，将铸造材料快速淬火至熔融Cu合金的熔点至少15℃以上的温度，控制铸造材料的温度等于或低于900℃ 并且对铸造材料进行多次热轧工序，使得最终热轧的温度在500〜600℃的范围内，形成轧制材料。

公开(公告)号：US08748734B2

公开(公告)日：2014-06-10

申请号：US11201288

申请日：2005-08-11

申请人： Yuju Endo ,  Takashi Nemoto ,  Hiromitsu Kuroda ,  Atsushi Ootake ,  Syuji Kawasaki ,  Hiroshi Bando

发明人： Yuju Endo ,  Takashi Nemoto ,  Hiromitsu Kuroda ,  Atsushi Ootake ,  Syuji Kawasaki ,  Hiroshi Bando

IPC分类号： H01L31/0224

CPC分类号： H01L31/0508 ,  H01L31/02008 ,  H01L31/0504 ,  H01L31/0512 ,  Y02E10/50 ,  Y10T29/49117

摘要： A rectangular conductor for a solar battery and a lead wire for a solar battery, in which warping or damaging of a silicon crystal wafer is hard to occur at the time of bonding a connection lead wire even when a silicon crystal wafer is configured to have a thin sheet structure, can be provided. A conductor 1 having a volume resistivity equal to or less than 50 μΩ·mm, and a 0.2% yield strength value equal to or less than 90 MPa in a tensile test is formed into a rectangular conductor 10 for a solar battery having a rectangular cross section, and a surface of the rectangular conductor 10 for a solar battery is coated with a solder plating film 13, to provide a lead wire 20 for a solar battery.

摘要翻译： 太阳能电池用矩形导体和太阳能电池用引线，即使在将硅晶片配置为具有导电性的情况下，也难以在接合连接引线时发生硅晶片的翘曲或破坏 可以提供薄片结构。 在拉伸试验中，体积电阻率等于或小于50μA·OHgr·mm，屈服强度等于或等于90MPa的导体1形成为具有矩形的太阳能电池的矩形导体10 横截面以及用于太阳能电池的矩形导体10的表面涂覆有焊料镀膜13，以提供用于太阳能电池的引线20。

公开(公告)号：US08691395B2

公开(公告)日：2014-04-08

申请号：US12357014

申请日：2009-01-21

申请人： Hideyuki Sagawa ,  Kazuma Kuroki ,  Hiromitsu Kuroda

发明人： Hideyuki Sagawa ,  Kazuma Kuroki ,  Hiromitsu Kuroda

IPC分类号： B32B15/00 ,  B23K1/00 ,  B32B15/20 ,  C23C28/02

CPC分类号： B32B15/015 ,  B23K35/002 ,  B23K35/22 ,  B23K35/30 ,  B23K35/3053 ,  C22C9/00 ,  C22C9/01 ,  C22C9/06 ,  C22C19/00 ,  C22C19/002 ,  C22C19/05 ,  C22C21/00 ,  C22C21/02 ,  C22C21/06 ,  C22C21/10 ,  C22C21/12 ,  C22C38/40 ,  Y10T428/12736 ,  Y10T428/1275 ,  Y10T428/12771 ,  Y10T428/12778 ,  Y10T428/12861 ,  Y10T428/12882 ,  Y10T428/12903 ,  Y10T428/12917 ,  Y10T428/31678

摘要： A composite material for brazing having features of: forming a homogenous distribution of components in the brazing filler material even after brazing; having an excellent workability; offering low manufacturing costs; and having satisfactory corrosion resistivity as desired. The composite material for brazing has a lamination of a brazing filler material layer thereon, wherein the brazing filler material layer is a layer of alloy that includes copper, aluminum, and nickel.

摘要翻译： 一种用于钎焊的复合材料，具有以下特征：即使在钎焊之后也在钎焊填料中形成均匀分布的组分; 具有极佳的可加工性; 提供低制造成本; 并且根据需要具有令人满意的耐腐蚀性。 用于钎焊的复合材料在其上具有钎焊填料层的层压，其中钎料填充层是包括铜，铝和镍的合金层。

公开(公告)号：US08669652B2

公开(公告)日：2014-03-11

申请号：US13421244

申请日：2012-03-15

申请人： Shohei Hata ,  Yuichi Oda ,  Kazuma Kuroki ,  Hiromitsu Kuroda

发明人： Shohei Hata ,  Yuichi Oda ,  Kazuma Kuroki ,  Hiromitsu Kuroda

IPC分类号： H01L23/48 ,  H05K5/02 ,  H01L21/00

CPC分类号： H01L23/49562 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49582 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/33 ,  H01L24/36 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/1134 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73221 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81455 ,  H01L2224/83385 ,  H01L2224/83455 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3651 ,  H01L2224/84 ,  H01L2924/00012 ,  H01L2924/01031 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05599

摘要： To provide an inexpensive lead component which can be easily connected to a semiconductor chip and which has satisfactory connectability. There is provided a lead component including a base material having a connection part for connecting to a semiconductor chip, comprising: a solder part having a Zn layer made of a Zn-bonding material rolled and clad-bonded on the base material, and an Al layer made of an Al-bonding material rolled and clad-bonded on the Zn layer, in a prescribed region including the connection part on the base material; and the solder part further comprising a metal thin film composed of one kind or two kinds or more of Au, Ag, Cu, Ni, Pd, and Pt covering a surface of the Al layer.

摘要翻译： 提供可以容易地连接到半导体芯片并且具有令人满意的可连接性的便宜的引线部件。 提供了一种引线部件，其包括具有用于连接到半导体芯片的连接部分的基底材料，包括：焊料部分，其具有由在该基材上卷绕和包覆的Zn粘合材料制成的Zn层，以及Al 在包含所述基材上的所述连接部的规定区域中，在所述Zn层上卷绕并包层接合的由Al结合材料制成的层; 并且所述焊料部还包括由覆盖所述Al层的表面的Au，Ag，Cu，Ni，Pd和Pt中的一种或两种以上构成的金属薄膜。

公开(公告)号：US20130256390A1

公开(公告)日：2013-10-03

申请号：US13700294

申请日：2011-07-28

申请人： Takuto Yamaguchi ,  Masahide Okamoto ,  Osamu Ikeda ,  Hiromitsu Kuroda ,  Kazuma Kuroki ,  Shohei Hata ,  Yuichi Oda

发明人： Takuto Yamaguchi ,  Masahide Okamoto ,  Osamu Ikeda ,  Hiromitsu Kuroda ,  Kazuma Kuroki ,  Shohei Hata ,  Yuichi Oda

IPC分类号： B23K35/02 ,  B21B3/00

CPC分类号： B23K35/0238 ,  B21B3/00 ,  B23K1/0016 ,  B23K35/282 ,  B23K35/286 ,  B23K35/302 ,  B23K35/38 ,  B23K35/383 ,  B23K2101/40 ,  B32B15/017 ,  B32B15/018 ,  C22C5/02 ,  C22C9/00 ,  C22F1/00 ,  C22F1/04 ,  C22F1/08 ,  C22F1/165 ,  H01L21/50 ,  H01L23/06 ,  H01L23/10 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/49513 ,  H01L23/49582 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L2224/2784 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/838 ,  H01L2224/8382 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/013 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/181 ,  Y10T428/12708 ,  Y10T428/12736 ,  Y10T428/12792 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/83205

摘要： The disclosed junction material, manufacturing method thereof, and manufacturing method of junction structure utilize lead-free materials and ensure a high reliability of the junction between a semiconductor element and a frame or substrate, or, between a metal plate and another metal plate. For junctions between a semiconductor element and a frame or substrate, by using as the JUNCTION MATERIAL a laminate material comprising a Zn-based metallic layer (101), Al-based metallic layers (102a, 102b) on both sides thereof, and X-based metallic layers (103a, 103b) (X=Cu, Au, Ag or Sn) on the outside of both the Al-based metallic layers (102a, 102b), even in an oxygen-rich environment, the superficial X-based metallic layers protect the Zn and Al from oxidation until said junction material melts, preserving the wettability and bondability of said junction material as solder and securing the high reliability of the junction.

摘要翻译： 所公开的连接材料，其制造方法和接合结构的制造方法利用无铅材料，并确保半导体元件与框架或基板之间，或金属板与另一金属板之间的接合部的高可靠性。 对于半导体元件和框架或基板之间的接合，通过使用作为连接材料的层叠材料，其包含Zn基金属层（101），其两侧上的Al基金属层（102a，102b）和X- 即使在富含氧的环境下，Al基金属层（102a，102b）外侧的金属基金属层（103a，103b）（X = Cu，Au，Ag或Sn），表面的X系金属 层保护Zn和Al免于氧化，直到所述接合材料熔化，保持所述接合材料作为焊料的润湿性和粘合性，并确保接合部的高可靠性。

公开(公告)号：US20130022831A1

公开(公告)日：2013-01-24

申请号：US13553762

申请日：2012-07-19

申请人： Hideyuki Sagawa ,  Seigi Aoyama ,  Hiromitsu Kuroda ,  Toru Sumi ,  Keisuke Fujito

发明人： Hideyuki Sagawa ,  Seigi Aoyama ,  Hiromitsu Kuroda ,  Toru Sumi ,  Keisuke Fujito

IPC分类号： B32B5/02

CPC分类号： H01B1/026 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L2224/05624 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/48824 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/10253 ,  Y10T428/12431 ,  H01L2224/45664 ,  H01L2224/45618 ,  H01L2224/45655 ,  H01L2224/45644 ,  H01L2224/45669 ,  H01L2224/45639 ,  H01L2924/01022 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01024 ,  H01L2924/00014 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/20755 ,  H01L2224/45124 ,  H01L2924/013 ,  H01L2924/00 ,  H01L2924/2011 ,  H01L2924/01006 ,  H01L2924/01004 ,  H01L2924/01033 ,  H01L2924/01008 ,  H01L2924/01016

摘要： A soft dilute copper alloy wire is composed of a soft dilute copper alloy material containing an additive element selected from the group consisting of Ti, Mg, Zr, Nb, Cu, V, Ni, Mn, and Cr, and balance comprising Cu. An average size of crystal grains lying from a surface of the soft dilute copper alloy wire at least to a depth of 20% of a wire diameter is not greater than 20 μm.

摘要翻译： 软的稀铜合金线由含有选自Ti，Mg，Zr，Nb，Cu，V，Ni，Mn和Cr组成的组的添加元素的软的稀铜合金材料构成，余量为Cu。 从软的稀铜合金线的表面至少达到线径的20％的深度的晶粒的平均尺寸不大于20μm。

公开(公告)号：US20120305286A1

公开(公告)日：2012-12-06

申请号：US13577400

申请日：2011-02-08

申请人： Seigi Aoyama ,  Toru Sumi ,  Hiromitsu Kuroda ,  Hideyuki Sagawa

发明人： Seigi Aoyama ,  Toru Sumi ,  Hiromitsu Kuroda ,  Hideyuki Sagawa

IPC分类号： C22C9/00 ,  H01B5/08 ,  H01B7/00 ,  H01B5/00

CPC分类号： C22C9/00 ,  B21C1/003 ,  C22C1/10 ,  C22F1/08 ,  H01B1/026

摘要： Provided are a soft dilute copper alloy material, a soft dilute copper alloy wire, a soft dilute copper alloy sheet, a soft dilute copper alloy stranded wire, and a cable, a coaxial cable and a composite cable using same. The disclosed soft-3dilute-copper-alloy material contains: copper; at least one additional element selected from the group consisting of Ti, Mg, Zr, Nb, Ca, V, Ni, Mn, and Cr; and inevitable impurities as the remainder. The soft dilute copper alloy material is characterized in that the average grain size is at most 20 μm in the surface layer up to a depth of 50 μm from the surface.

摘要翻译： 提供了一种软的稀铜合金材料，一种软的稀铜合金线，一种软的稀铜合金板，一种软的稀铜合金绞线，以及一根电缆，一根同轴电缆和一根使用它的复合电缆。 所公开的软3dilute-铜合金材料包含：铜; 选自Ti，Mg，Zr，Nb，Ca，V，Ni，Mn和Cr中的至少一种附加元素; 和不可避免的杂质作为剩余部分。 软的稀铜合金材料的特征在于，表面层的平均粒径为20μm以下，距表面50μm为深度。

公开(公告)号：US20120248592A1

公开(公告)日：2012-10-04

申请号：US13421244

申请日：2012-03-15

申请人： Shohei HATA ,  Yuichi Oda ,  Kazuma Kuroki ,  Hiromitsu Kuroda

发明人： Shohei HATA ,  Yuichi Oda ,  Kazuma Kuroki ,  Hiromitsu Kuroda

IPC分类号： H01L23/495 ,  H01L21/60

CPC分类号： H01L23/49562 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49582 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/33 ,  H01L24/36 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/1134 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73221 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81455 ,  H01L2224/83385 ,  H01L2224/83455 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3651 ,  H01L2224/84 ,  H01L2924/00012 ,  H01L2924/01031 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05599

摘要： To provide an inexpensive lead component which can be easily connected to a semiconductor chip and which has satisfactory connectability. There is provided a lead component including a base material having a connection part for connecting to a semiconductor chip, comprising: a solder part having a Zn layer made of a Zn-bonding material rolled and clad-bonded on the base material, and an Al layer made of an Al-bonding material rolled and clad-bonded on the Zn layer, in a prescribed region including the connection part on the base material; and the solder part further comprising a metal thin film composed of one kind or two kinds or more of Au, Ag, Cu, Ni, Pd, and Pt covering a surface of the Al layer.

摘要翻译： 提供可以容易地连接到半导体芯片并且具有令人满意的可连接性的便宜的引线部件。 提供了一种引线部件，其包括具有用于连接到半导体芯片的连接部分的基底材料，包括：焊料部分，其具有由在该基材上卷绕和包覆的Zn粘合材料制成的Zn层，以及Al 在包含所述基材上的所述连接部的规定区域中，在所述Zn层上卷绕并包层接合的由Al结合材料制成的层; 并且所述焊料部还包括由覆盖所述Al层的表面的Au，Ag，Cu，Ni，Pd和Pt中的一种或两种以上构成的金属薄膜。

公开(公告)号：US20120100390A1

公开(公告)日：2012-04-26

申请号：US13317463

申请日：2011-10-19

申请人： Hiromitsu Kuroda ,  Toru Sumi ,  Hideyuki Sagawa ,  Seigi Aoyama ,  Masayoshi Goto ,  Takahiko Hanada ,  Takahiro Sato ,  Hidenori Abe

发明人： Hiromitsu Kuroda ,  Toru Sumi ,  Hideyuki Sagawa ,  Seigi Aoyama ,  Masayoshi Goto ,  Takahiko Hanada ,  Takahiro Sato ,  Hidenori Abe

IPC分类号： B32B15/20 ,  B23K31/00

CPC分类号： C22C9/00 ,  B23K31/00 ,  B32B15/20 ,  C22C1/02 ,  C22C1/1036 ,  C22F1/00 ,  C22F1/08 ,  Y10T428/1266 ,  Y10T428/12667 ,  Y10T428/12882 ,  Y10T428/12903 ,  Y10T428/1291

摘要： A weldment includes metal materials that are welded to each other. At least one of the metal materials includes pure copper including an inevitable impurity, more than 2 mass ppm of oxygen, and an additive element selected from the group consisting of Mg, Zr, Nb, Fe, Si, Al, Ca, V, Ni, Mn, Ti and Cr. A method of manufacturing a weldment includes melting a dilute copper alloy material by SCR continuous casting and rolling at a molten copper temperature of not less than 1100° C. and not more than 1320° C. to make a molten metal, forming a cast bar from the molten metal, forming a dilute copper alloy member by hot-rolling the cast bar, and welding the dilute copper alloy member to a metal material. The dilute copper alloy material includes the pure copper, more than 2 mass ppm of oxygen, and the additive element,

摘要翻译： 焊件包括彼此焊接的金属材料。 至少一种金属材料包括包含不可避免的杂质的纯铜，大于2质量ppm的氧，以及选自Mg，Zr，Nb，Fe，Si，Al，Ca，V，Ni ，Mn，Ti和Cr。 一种焊接件的制造方法，其特征在于，以不低于1100℃，不高于1320℃的熔融铜温度，通过SCR连续铸造，熔融稀释的铜合金材料，形成熔融金属 从熔融金属中，通过对铸造棒进行热轧而形成稀铜合金构件，并将稀铜合金构件焊接到金属材料上。 稀铜合金材料包括纯铜，大于2质量ppm的氧和添加元素，